X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=1192984bba3e4d87ed09ad007a46785758d8e356;hp=12ef6dbf7d4a462fb23032feaaae3f9c7c57d4cb;hb=dc21db588bb6f9a1ca02db98258233a28332369d;hpb=b0bbd0c9dbb657b5400a600b085e67366b2cd448

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 12ef6db..1192984 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1593,6 +1593,52 @@
                  processes involved in the silicon carbide transition.",
 }
 
+@Article{zirkelbach12,
+  author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and W.
+                 G. Schmidt and E. Rauls and J. K. N. Lindner",
+  title =        "First-principles and empirical potential simulation
+                 study of intrinsic and carbon-related defects in
+                 silicon",
+  journal =      "phys. status solidi (c)",
+  volume =       "9",
+  number =       "10-11",
+  publisher =    "WILEY-VCH Verlag",
+  ISSN =         "1610-1642",
+  URL =          "http://dx.doi.org/10.1002/pssc.201200198",
+  doi =          "10.1002/pssc.201200198",
+  pages =        "1968--1973",
+  keywords =     "silicon, carbon, silicon carbide, defect formation,
+                 defect migration, density functional theory, empirical
+                 potential, molecular dynamics",
+  year =         "2012",
+  abstract =     "Results of atomistic simulations aimed at
+                 understanding precipitation of the highly attractive
+                 wide band gap semiconductor material silicon carbide in
+                 silicon are presented. The study involves a systematic
+                 investigation of intrinsic and carbon-related defects
+                 as well as defect combinations and defect migration by
+                 both, quantummechanical first-principles as well as
+                 empirical potential methods. Comparing formation and
+                 activation energies, ground-state structures of defects
+                 and defect combinations as well as energetically
+                 favorable agglomeration of defects are predicted.
+                 Moreover, accurate ab initio calculations unveil
+                 limitations of the analytical method based on a
+                 Tersoff-like bond order potential. A work-around is
+                 proposed in order to subsequently apply the highly
+                 efficient technique on large structures not accessible
+                 by first-principles methods. The outcome of both types
+                 of simulation provides a basic microscopic
+                 understanding of defect formation and structural
+                 evolution particularly at non-equilibrium conditions
+                 strongly deviated from the ground state as commonly
+                 found in SiC growth processes. A possible precipitation
+                 mechanism, which conforms well to experimental findings
+                 and clarifies contradictory views present in the
+                 literature is outlined (© 2012 WILEY-VCH Verlag GmbH \&
+                 Co. KGaA, Weinheim)",
+}
+
 @Article{lindner95,
   author =       "J. K. N. Lindner and A. Frohnwieser and B.
                  Rauschenbach and B. Stritzker",
@@ -5553,7 +5599,7 @@
 @Article{zunger01,
   author =       "Alex Zunger",
   title =        "Pseudopotential Theory of Semiconductor Quantum Dots",
-  journal =      "physica status solidi (b)",
+  journal =      "phys. status solidi (b)",
   volume =       "224",
   number =       "3",
   publisher =    "WILEY-VCH Verlag Berlin GmbH",
@@ -5571,7 +5617,7 @@
   author =       "Alex Zunger",
   title =        "On the Farsightedness (hyperopia) of the Standard k ·
                  p Model",
-  journal =      "physica status solidi (a)",
+  journal =      "phys. status solidi (a)",
   volume =       "190",
   number =       "2",
   publisher =    "WILEY-VCH Verlag Berlin GmbH",
@@ -6655,3 +6701,38 @@
   publisher =    "American Physical Society",
   notes =        "topological insulator without spin-orbit coupling",
 }
+
+@Article{luo10,
+  title =        "Design Principles and Coupling Mechanisms in the 2{D}
+                 Quantum Well Topological Insulator
+                 $\mathrm{HgTe}/\mathrm{CdTe}$",
+  author =       "Jun-Wei Luo and Alex Zunger",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "105",
+  issue =        "17",
+  pages =        "176805",
+  numpages =     "4",
+  year =         "2010",
+  month =        oct,
+  doi =          "10.1103/PhysRevLett.105.176805",
+  URL =          "http://link.aps.org/doi/10.1103/PhysRevLett.105.176805",
+  publisher =    "American Physical Society",
+  notes =        "zunger topological insulator",
+}
+
+@Article{bryant03,
+  title =        "Tight-binding theory of quantum-dot quantum
+                 wells:\quad{}Single-particle effects and near-band-edge
+                 structure",
+  author =       "Garnett W. Bryant and W. Jask\'olski",
+  journal =      "Phys. Rev. B",
+  volume =       "67",
+  issue =        "20",
+  pages =        "205320",
+  numpages =     "17",
+  year =         "2003",
+  month =        may,
+  doi =          "10.1103/PhysRevB.67.205320",
+  URL =          "http://link.aps.org/doi/10.1103/PhysRevB.67.205320",
+  publisher =    "American Physical Society",
+}