X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=2b36164a4cbdbdf18f317d6f08141dd2f67667db;hp=2e0a7f927bf0657beb9562f81b1c236ba354597b;hb=49306f3bc88923d98a69410e35f1f9363628229f;hpb=fc1ac9421aa60a0e24733bb2f5873e8c0964b080 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 2e0a7f9..2b36164 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,16 @@ notes = "derivation of albe bond order formalism", } +@Article{bean71, + author = "A. R. Bean and R. C. Newman", + title = "", + journal = "J. Phys. Chem. Solids", + volume = "32", + pages = "1211", + year = "1971", + notes = "experimental solubility data of carbon in silicon", +} + @Article{capano97, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", @@ -86,6 +96,22 @@ relation (uer), minimum range model (mrm)", } +@Article{balamane92, + title = "Comparative study of silicon empirical interatomic + potentials", + author = "H. Balamane and T. Halicioglu and W. A. Tiller", + journal = "Phys. Rev. B", + volume = "46", + number = "4", + pages = "2250--2279", + numpages = "29", + year = "1992", + month = jul, + doi = "10.1103/PhysRevB.46.2250", + publisher = "American Physical Society", + notes = "comparison of classical potentials for si", +} + @Article{koster2002, title = "Stress relaxation in $a-Si$ induced by ion bombardment", @@ -343,6 +369,40 @@ notes = "si self interstitial, tbmd, virial stress", } +@Article{al-mushadani03, + title = "Free-energy calculations of intrinsic point defects in + silicon", + author = "O. K. Al-Mushadani and R. J. Needs", + journal = "Phys. Rev. B", + volume = "68", + number = "23", + pages = "235205", + numpages = "8", + year = "2003", + month = dec, + doi = "10.1103/PhysRevB.68.235205", + publisher = "American Physical Society", + notes = "formation energies of intrinisc point defects in + silicon, si self interstitials", +} + +@Article{ma10, + title = "Ab initio study of self-diffusion in silicon over a + wide temperature range: Point defect states and + migration mechanisms", + author = "Shangyi Ma and Shaoqing Wang", + journal = "Phys. Rev. B", + volume = "81", + number = "19", + pages = "193203", + numpages = "4", + year = "2010", + month = may, + doi = "10.1103/PhysRevB.81.193203", + publisher = "American Physical Society", + notes = "si self interstitial diffusion + refs", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", @@ -374,7 +434,8 @@ doi = "10.1103/PhysRevB.66.195214", publisher = "American Physical Society", notes = "c in c-si, diffusion, interstitial configuration + - links", + links, interaction of carbon and silicon + interstitials", } @Article{leung99, @@ -390,13 +451,14 @@ month = sep, doi = "10.1103/PhysRevLett.83.2351", publisher = "American Physical Society", - notes = "nice images of the defects", + notes = "nice images of the defects, si defect overview + + refs", } -@Article{capazd94, +@Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos", + author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -410,6 +472,23 @@ dumbbell", } +@Article{dal_pino93, + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. Dal Pino and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", +} + @Article{car84, title = "Microscopic Theory of Atomic Diffusion Mechanisms in Silicon", @@ -461,6 +540,21 @@ notes = "mc md, strain compensation in si ge by c insertion", } +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Communications", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -491,6 +585,21 @@ month = sep, doi = "10.1103/PhysRevB.42.5759", publisher = "American Physical Society", + notes = "carbon diffusion in silicon", +} + +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semiconductor Science and Technology", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", } @Article{strane96, @@ -789,6 +898,20 @@ publisher = "American Physical Society", } +@Article{tersoff90, + title = "Carbon defects and defect reactions in silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "64", + number = "15", + pages = "1757--1760", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevLett.64.1757", + publisher = "American Physical Society", +} + @Article{fahey89, title = "Point defects and dopant diffusion in silicon", author = "P. M. Fahey and P. B. Griffin and J. D. Plummer", @@ -857,9 +980,9 @@ pages = "15150--15159", numpages = "9", year = "1995", - month = dec, doi = "10.1103/PhysRevB.52.15150", - notes = "modified tersoff, scale cutoff with volume", + notes = "modified tersoff, scale cutoff with volume, promising + tersoff reparametrization", publisher = "American Physical Society", } @@ -938,6 +1061,43 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{nishino83, + author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. + Will", + collaboration = "", + title = "Production of large-area single-crystal wafers of + cubic Si{C} for semiconductor devices", + publisher = "AIP", + year = "1983", + journal = "Applied Physics Letters", + volume = "42", + number = "5", + pages = "460--462", + keywords = "silicon carbides; layers; chemical vapor deposition; + monocrystals", + URL = "http://link.aip.org/link/?APL/42/460/1", + doi = "10.1063/1.93970", + notes = "cvd of 3c-sic on si, sic buffer layer", +} + +@Article{nishino:4889, + author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono + and Hiroyuki Matsunami", + collaboration = "", + title = "Epitaxial growth and electric characteristics of cubic + Si{C} on silicon", + publisher = "AIP", + year = "1987", + journal = "Journal of Applied Physics", + volume = "61", + number = "10", + pages = "4889--4893", + URL = "http://link.aip.org/link/?JAP/61/4889/1", + doi = "10.1063/1.338355", + notes = "cvd of 3c-sic on si, sic buffer layer, first time + carbonization", +} + @Article{powell87, author = "J. Anthony Powell and Lawrence G. Matus and Maria A. Kuczmarski", @@ -972,6 +1132,7 @@ VAPOR DEPOSITION", URL = "http://link.aip.org/link/?JAP/73/726/1", doi = "10.1063/1.353329", + notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } @Article{powell90, @@ -993,6 +1154,28 @@ PHASE EPITAXY", URL = "http://link.aip.org/link/?APL/56/1353/1", doi = "10.1063/1.102512", + notes = "cvd of 3c-sic on 6h-sic", +} + +@Article{yuan95, + author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. + Thokala and M. J. Loboda", + collaboration = "", + title = "Reduced temperature growth of crystalline 3{C}-Si{C} + films on 6{H}-Si{C} by chemical vapor deposition from + silacyclobutane", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "2", + pages = "1271--1273", + keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION + EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD; + SPECTROPHOTOMETRY", + URL = "http://link.aip.org/link/?JAP/78/1271/1", + doi = "10.1063/1.360368", + notes = "3c-sic on 6h-sic, cvd, reduced temperature", } @Article{fissel95, @@ -1100,6 +1283,25 @@ and J. M. Poate", } +@Article{stolk97, + author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and + D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and + M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T. + E. Haynes", + collaboration = "", + title = "Physical mechanisms of transient enhanced dopant + diffusion in ion-implanted silicon", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "81", + number = "9", + pages = "6031--6050", + URL = "http://link.aip.org/link/?JAP/81/6031/1", + doi = "10.1063/1.364452", + notes = "ted, transient enhanced diffusion, c silicon trap", +} + @Article{powell94, author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", collaboration = "", @@ -1257,7 +1459,7 @@ notes = "charge transport in strained si", } -@Article{PhysRevB.69.155214, +@Article{kapur04, title = "Carbon-mediated aggregation of self-interstitials in silicon: {A} large-scale molecular dynamics study", author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", @@ -1273,18 +1475,378 @@ notes = "simulation using promising tersoff reparametrization", } -@Article{PhysRevB.52.15150, - title = "Atomistic simulation of thermomechanical properties of - \beta{}-Si{C}", - author = "Meijie Tang and Sidney Yip", - journal = "Phys. Rev. B", - volume = "52", +@Article{barkema96, + title = "Event-Based Relaxation of Continuous Disordered + Systems", + author = "G. T. Barkema and Normand Mousseau", + journal = "Phys. Rev. Lett.", + volume = "77", number = "21", - pages = "15150--15159", + pages = "4358--4361", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4358", + publisher = "American Physical Society", + notes = "activation relaxation technique, art, speed up slow + dynamic mds", +} + +@Article{cances09, + author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K. + Minoukadeh and F. Willaime", + collaboration = "", + title = "Some improvements of the activation-relaxation + technique method for finding transition pathways on + potential energy surfaces", + publisher = "AIP", + year = "2009", + journal = "The Journal of Chemical Physics", + volume = "130", + number = "11", + eid = "114711", + numpages = "6", + pages = "114711", + keywords = "eigenvalues and eigenfunctions; iron; potential energy + surfaces; vacancies (crystal)", + URL = "http://link.aip.org/link/?JCP/130/114711/1", + doi = "10.1063/1.3088532", + notes = "improvements to art, refs for methods to find + transition pathways", +} + +@Article{parrinello81, + author = "M. Parrinello and A. Rahman", + collaboration = "", + title = "Polymorphic transitions in single crystals: {A} new + molecular dynamics method", + publisher = "AIP", + year = "1981", + journal = "Journal of Applied Physics", + volume = "52", + number = "12", + pages = "7182--7190", + keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL + MODELS; DYNAMICS; THEORETICAL DATA; STRESSES; + CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL; + COMPRESSION; TENSILE PROPERTIES; COMPARATIVE + EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES; + IMPACT SHOCK", + URL = "http://link.aip.org/link/?JAP/52/7182/1", + doi = "10.1063/1.328693", +} + +@Article{stillinger85, + title = "Computer simulation of local order in condensed phases + of silicon", + author = "Frank H. Stillinger and Thomas A. Weber", + journal = "Phys. Rev. B", + volume = "31", + number = "8", + pages = "5262--5271", numpages = "9", - year = "1995", - month = dec, - doi = "10.1103/PhysRevB.52.15150", + year = "1985", + month = apr, + doi = "10.1103/PhysRevB.31.5262", + publisher = "American Physical Society", +} + +@Article{bazant97, + title = "Environment-dependent interatomic potential for bulk + silicon", + author = "Martin Z. Bazant and Efthimios Kaxiras and J. F. + Justo", + journal = "Phys. Rev. B", + volume = "56", + number = "14", + pages = "8542--8552", + numpages = "10", + year = "1997", + month = oct, + doi = "10.1103/PhysRevB.56.8542", + publisher = "American Physical Society", +} + +@Article{justo98, + title = "Interatomic potential for silicon defects and + disordered phases", + author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios + Kaxiras and V. V. Bulatov and Sidney Yip", + journal = "Phys. Rev. B", + volume = "58", + number = "5", + pages = "2539--2550", + numpages = "11", + year = "1998", + month = aug, + doi = "10.1103/PhysRevB.58.2539", + publisher = "American Physical Society", +} + +@Article{parcas_md, + title = "{PARCAS} molecular dynamics code", + author = "K. Nordlund", + year = "2008", +} + +@Article{voter97, + title = "Hyperdynamics: Accelerated Molecular Dynamics of + Infrequent Events", + author = "Arthur F. Voter", + journal = "Phys. Rev. Lett.", + volume = "78", + number = "20", + pages = "3908--3911", + numpages = "3", + year = "1997", + month = may, + doi = "10.1103/PhysRevLett.78.3908", + publisher = "American Physical Society", + notes = "hyperdynamics, accelerated md", +} + +@Article{voter97_2, + author = "Arthur F. Voter", + collaboration = "", + title = "A method for accelerating the molecular dynamics + simulation of infrequent events", + publisher = "AIP", + year = "1997", + journal = "The Journal of Chemical Physics", + volume = "106", + number = "11", + pages = "4665--4677", + keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM + TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY; + SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential + energy functions; surface diffusion; reaction kinetics + theory; potential energy surfaces", + URL = "http://link.aip.org/link/?JCP/106/4665/1", + doi = "10.1063/1.473503", + notes = "improved hyperdynamics md", +} + +@Article{sorensen2000, + author = "Mads R. S\o rensen and Arthur F. Voter", + collaboration = "", + title = "Temperature-accelerated dynamics for simulation of + infrequent events", + publisher = "AIP", + year = "2000", + journal = "The Journal of Chemical Physics", + volume = "112", + number = "21", + pages = "9599--9606", + keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES; + MOLECULAR DYNAMICS METHOD; surface diffusion", + URL = "http://link.aip.org/link/?JCP/112/9599/1", + doi = "10.1063/1.481576", + notes = "temperature accelerated dynamics, tad", +} + +@Article{voter98, + title = "Parallel replica method for dynamics of infrequent + events", + author = "Arthur F. Voter", + journal = "Phys. Rev. B", + volume = "57", + number = "22", + pages = "R13985--R13988", + numpages = "3", + year = "1998", + month = jun, + doi = "10.1103/PhysRevB.57.R13985", + publisher = "American Physical Society", + notes = "parallel replica method, accelerated md", +} + +@Article{wu99, + author = "Xiongwu Wu and Shaomeng Wang", + collaboration = "", + title = "Enhancing systematic motion in molecular dynamics + simulation", + publisher = "AIP", + year = "1999", + journal = "The Journal of Chemical Physics", + volume = "110", + number = "19", + pages = "9401--9410", + keywords = "molecular dynamics method; argon; Lennard-Jones + potential; crystallisation; liquid theory", + URL = "http://link.aip.org/link/?JCP/110/9401/1", + doi = "10.1063/1.478948", + notes = "self guided md, sgmd, accelerated md, enhancing + systematic motion", +} + +@Article{choudhary05, + author = "Devashish Choudhary and Paulette Clancy", + collaboration = "", + title = "Application of accelerated molecular dynamics schemes + to the production of amorphous silicon", + publisher = "AIP", + year = "2005", + journal = "The Journal of Chemical Physics", + volume = "122", + number = "15", + eid = "154509", + numpages = "8", + pages = "154509", + keywords = "molecular dynamics method; silicon; glass structure; + amorphous semiconductors", + URL = "http://link.aip.org/link/?JCP/122/154509/1", + doi = "10.1063/1.1878733", + notes = "explanation of sgmd and hyper md, applied to amorphous + silicon", +} + +@Article{taylor93, + author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele", + collaboration = "", + title = "Carbon precipitation in silicon: Why is it so + difficult?", + publisher = "AIP", + year = "1993", + journal = "Applied Physics Letters", + volume = "62", + number = "25", + pages = "3336--3338", + keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED + MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE + ENERGY", + URL = "http://link.aip.org/link/?APL/62/3336/1", + doi = "10.1063/1.109063", + notes = "interfacial energy of cubic sic and si", +} + +@Article{chaussende08, + title = "Prospects for 3{C}-Si{C} bulk crystal growth", + journal = "Journal of Crystal Growth", + volume = "310", + number = "5", + pages = "976--981", + year = "2008", + note = "Proceedings of the E-MRS Conference, Symposium G - + Substrates of Wide Bandgap Materials", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2007.11.140", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082", + author = "D. Chaussende and F. Mercier and A. Boulle and F. + Conchon and M. Soueidan and G. Ferro and A. Mantzari + and A. Andreadou and E. K. Polychroniadis and C. + Balloud and S. Juillaguet and J. Camassel and M. Pons", + notes = "3c-sic crystal growth, sic fabrication + links, + metastable", +} + +@Article{feynman39, + title = "Forces in Molecules", + author = "R. P. Feynman", + journal = "Phys. Rev.", + volume = "56", + number = "4", + pages = "340--343", + numpages = "3", + year = "1939", + month = aug, + doi = "10.1103/PhysRev.56.340", + publisher = "American Physical Society", + notes = "hellmann feynman forces", +} + +@Article{buczko00, + title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and + $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of + their Contrasting Properties", + author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates + T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "84", + number = "5", + pages = "943--946", + numpages = "3", + year = "2000", + month = jan, + doi = "10.1103/PhysRevLett.84.943", + publisher = "American Physical Society", + notes = "si sio2 and sic sio2 interface", +} + +@Article{djurabekova08, + title = "Atomistic simulation of the interface structure of Si + nanocrystals embedded in amorphous silica", + author = "Flyura Djurabekova and Kai Nordlund", + journal = "Phys. Rev. B", + volume = "77", + number = "11", + pages = "115325", + numpages = "7", + year = "2008", + month = mar, + doi = "10.1103/PhysRevB.77.115325", + publisher = "American Physical Society", + notes = "nc-si in sio2, interface energy, nc construction, + angular distribution, coordination", +} + +@Article{wen:073522, + author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J. + W. Liang and J. Zou", + collaboration = "", + title = "Nature of interfacial defects and their roles in + strain relaxation at highly lattice mismatched + 3{C}-Si{C}/Si (001) interface", + publisher = "AIP", + year = "2009", + journal = "Journal of Applied Physics", + volume = "106", + number = "7", + eid = "073522", + numpages = "8", + pages = "073522", + keywords = "anelastic relaxation; crystal structure; dislocations; + elemental semiconductors; semiconductor growth; + semiconductor thin films; silicon; silicon compounds; + stacking faults; wide band gap semiconductors", + URL = "http://link.aip.org/link/?JAP/106/073522/1", + doi = "10.1063/1.3234380", + notes = "sic/si interface, follow refs", +} + +@Article{kitabatake93, + author = "Makoto Kitabatake and Masahiro Deguchi and Takashi + Hirao", + collaboration = "", + title = "Simulations and experiments of Si{C} heteroepitaxial + growth on Si(001) surface", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "7", + pages = "4438--4445", + keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR + BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON; + MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION", + URL = "http://link.aip.org/link/?JAP/74/4438/1", + doi = "10.1063/1.354385", + notes = "mbe and md of sic growth on si, 4 to 5 shrinkage + model, interface", +} + +@Article{pizzagalli03, + title = "Theoretical investigations of a highly mismatched + interface: Si{C}/Si(001)", + author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra + Catellani", + journal = "Phys. Rev. B", + volume = "68", + number = "19", + pages = "195302", + numpages = "10", + year = "2003", + month = nov, + doi = "10.1103/PhysRevB.68.195302", publisher = "American Physical Society", - notes = "promising tersoff reparametrization", + notes = "tersoff md and ab initio sic/si interface study", }