X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=2b36164a4cbdbdf18f317d6f08141dd2f67667db;hp=66641a677ad4fd035cd4850244c7a0daac785c4d;hb=49306f3bc88923d98a69410e35f1f9363628229f;hpb=22bbeaa80fc6a1d531f14e0ae11da66ba3a74f9a diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 66641a6..2b36164 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,16 @@ notes = "derivation of albe bond order formalism", } +@Article{bean71, + author = "A. R. Bean and R. C. Newman", + title = "", + journal = "J. Phys. Chem. Solids", + volume = "32", + pages = "1211", + year = "1971", + notes = "experimental solubility data of carbon in silicon", +} + @Article{capano97, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", @@ -49,6 +59,17 @@ year = "1997", } +@Article{fischer90, + author = "G. R. Fisher and P. Barnes", + title = "Towards a unified view of polytypism in silicon + carbide", + journal = "Philosophical Magazine Part B", + volume = "61", + pages = "217--236", + year = "1990", + notes = "sic polytypes", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -75,6 +96,22 @@ relation (uer), minimum range model (mrm)", } +@Article{balamane92, + title = "Comparative study of silicon empirical interatomic + potentials", + author = "H. Balamane and T. Halicioglu and W. A. Tiller", + journal = "Phys. Rev. B", + volume = "46", + number = "4", + pages = "2250--2279", + numpages = "29", + year = "1992", + month = jul, + doi = "10.1103/PhysRevB.46.2250", + publisher = "American Physical Society", + notes = "comparison of classical potentials for si", +} + @Article{koster2002, title = "Stress relaxation in $a-Si$ induced by ion bombardment", @@ -107,6 +144,16 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{moissan04, + author = "Henri Moissan", + title = "Nouvelles recherches sur la météorité de Cañon + Diablo", + journal = "Comptes rendus de l'Académie des Sciences", + volume = "139", + pages = "773--786", + year = "1904", +} + @Book{park98, author = "Y. S. Park", title = "Si{C} Materials and Devices", @@ -196,7 +243,7 @@ @Article{batra87, title = "Molecular-dynamics study of self-interstitials in silicon", - author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}", + author = "Inder P. Batra and Farid F. Abraham and S. Ciraci", journal = "Phys. Rev. B", volume = "35", number = "18", @@ -294,7 +341,8 @@ Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes", - author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}", + author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la + Rubia", journal = "Phys. Rev. B", volume = "55", number = "21", @@ -321,10 +369,45 @@ notes = "si self interstitial, tbmd, virial stress", } +@Article{al-mushadani03, + title = "Free-energy calculations of intrinsic point defects in + silicon", + author = "O. K. Al-Mushadani and R. J. Needs", + journal = "Phys. Rev. B", + volume = "68", + number = "23", + pages = "235205", + numpages = "8", + year = "2003", + month = dec, + doi = "10.1103/PhysRevB.68.235205", + publisher = "American Physical Society", + notes = "formation energies of intrinisc point defects in + silicon, si self interstitials", +} + +@Article{ma10, + title = "Ab initio study of self-diffusion in silicon over a + wide temperature range: Point defect states and + migration mechanisms", + author = "Shangyi Ma and Shaoqing Wang", + journal = "Phys. Rev. B", + volume = "81", + number = "19", + pages = "193203", + numpages = "4", + year = "2010", + month = may, + doi = "10.1103/PhysRevB.81.193203", + publisher = "American Physical Society", + notes = "si self interstitial diffusion + refs", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", - author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}", + author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R. + Corrales", journal = "Phys. Rev. B", volume = "64", number = "24", @@ -351,7 +434,8 @@ doi = "10.1103/PhysRevB.66.195214", publisher = "American Physical Society", notes = "c in c-si, diffusion, interstitial configuration + - links", + links, interaction of carbon and silicon + interstitials", } @Article{leung99, @@ -367,13 +451,14 @@ month = sep, doi = "10.1103/PhysRevLett.83.2351", publisher = "American Physical Society", - notes = "nice images of the defects", + notes = "nice images of the defects, si defect overview + + refs", } -@Article{capazd94, +@Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}", + author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -387,6 +472,23 @@ dumbbell", } +@Article{dal_pino93, + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. Dal Pino and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", +} + @Article{car84, title = "Microscopic Theory of Atomic Diffusion Mechanisms in Silicon", @@ -438,6 +540,21 @@ notes = "mc md, strain compensation in si ge by c insertion", } +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Communications", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -468,6 +585,21 @@ month = sep, doi = "10.1103/PhysRevB.42.5759", publisher = "American Physical Society", + notes = "carbon diffusion in silicon", +} + +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semiconductor Science and Technology", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", } @Article{strane96, @@ -486,7 +618,8 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}", + author = "P. Laveant and G. Gerth and P. Werner and U. + G{\"o}sele", journal = "Materials Science and Engineering B", volume = "89", number = "1-3", @@ -552,8 +685,8 @@ @Article{zirkelbach2007, title = "Monte Carlo simulation study of a selforganisation process leading to ordered precipitate structures", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Nucl. Instr. and Meth. B", volume = "257", number = "1--2", @@ -570,8 +703,8 @@ title = "Monte-Carlo simulation study of the self-organization of nanometric amorphous precipitates in regular arrays during ion irradiation", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Nucl. Instr. and Meth. B", volume = "242", number = "1--2", @@ -588,8 +721,8 @@ title = "Modelling of a selforganization process leading to periodic arrays of nanometric amorphous precipitates by ion irradiation", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Comp. Mater. Sci.", volume = "33", number = "1--3", @@ -602,6 +735,56 @@ NETHERLANDS", } +@Article{lindner99, + title = "Controlling the density distribution of Si{C} + nanocrystals for the ion beam synthesis of buried Si{C} + layers in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "147", + number = "1-4", + pages = "249--255", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00598-9", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169", + author = "J. K. N. Lindner and B. Stritzker", + notes = "two-step implantation process", +} + +@Article{lindner99_2, + title = "Mechanisms in the ion beam synthesis of Si{C} layers + in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "148", + number = "1-4", + pages = "528--533", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00787-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", + author = "J. K. N. Lindner and B. Stritzker", +} + +@Article{lindner01, + title = "Ion beam synthesis of buried Si{C} layers in silicon: + Basic physical processes", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "178", + number = "1-4", + pages = "44--54", + year = "2001", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(01)00504-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", + author = "Jörg K. N. Lindner", +} + @Article{lindner02, title = "High-dose carbon implantations into silicon: fundamental studies for new technological tricks", @@ -715,6 +898,20 @@ publisher = "American Physical Society", } +@Article{tersoff90, + title = "Carbon defects and defect reactions in silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "64", + number = "15", + pages = "1757--1760", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevLett.64.1757", + publisher = "American Physical Society", +} + @Article{fahey89, title = "Point defects and dopant diffusion in silicon", author = "P. M. Fahey and P. B. Griffin and J. D. Plummer", @@ -783,9 +980,9 @@ pages = "15150--15159", numpages = "9", year = "1995", - month = dec, doi = "10.1103/PhysRevB.52.15150", - notes = "modified tersoff, scale cutoff with volume", + notes = "modified tersoff, scale cutoff with volume, promising + tersoff reparametrization", publisher = "American Physical Society", } @@ -863,3 +1060,793 @@ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc", author = "Yu. M. Tairov and V. F. Tsvetkov", } + +@Article{nishino83, + author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. + Will", + collaboration = "", + title = "Production of large-area single-crystal wafers of + cubic Si{C} for semiconductor devices", + publisher = "AIP", + year = "1983", + journal = "Applied Physics Letters", + volume = "42", + number = "5", + pages = "460--462", + keywords = "silicon carbides; layers; chemical vapor deposition; + monocrystals", + URL = "http://link.aip.org/link/?APL/42/460/1", + doi = "10.1063/1.93970", + notes = "cvd of 3c-sic on si, sic buffer layer", +} + +@Article{nishino:4889, + author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono + and Hiroyuki Matsunami", + collaboration = "", + title = "Epitaxial growth and electric characteristics of cubic + Si{C} on silicon", + publisher = "AIP", + year = "1987", + journal = "Journal of Applied Physics", + volume = "61", + number = "10", + pages = "4889--4893", + URL = "http://link.aip.org/link/?JAP/61/4889/1", + doi = "10.1063/1.338355", + notes = "cvd of 3c-sic on si, sic buffer layer, first time + carbonization", +} + +@Article{powell87, + author = "J. Anthony Powell and Lawrence G. Matus and Maria A. + Kuczmarski", + title = "Growth and Characterization of Cubic Si{C} + Single-Crystal Films on Si", + publisher = "ECS", + year = "1987", + journal = "Journal of The Electrochemical Society", + volume = "134", + number = "6", + pages = "1558--1565", + keywords = "semiconductor materials; silicon compounds; carbon + compounds; crystal morphology; electron mobility", + URL = "http://link.aip.org/link/?JES/134/1558/1", + doi = "10.1149/1.2100708", + notes = "blue light emitting diodes (led)", +} + +@Article{kimoto93, + author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo + and Hiroyuki Matsunami", + title = "Growth mechanism of 6{H}-Si{C} in step-controlled + epitaxy", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "73", + number = "2", + pages = "726--732", + keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE + RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL + VAPOR DEPOSITION", + URL = "http://link.aip.org/link/?JAP/73/726/1", + doi = "10.1063/1.353329", + notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", +} + +@Article{powell90, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of improved quality 3{C}-Si{C} films on + 6{H}-Si{C} substrates", + publisher = "AIP", + year = "1990", + journal = "Applied Physics Letters", + volume = "56", + number = "14", + pages = "1353--1355", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON + MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR + PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1353/1", + doi = "10.1063/1.102512", + notes = "cvd of 3c-sic on 6h-sic", +} + +@Article{yuan95, + author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. + Thokala and M. J. Loboda", + collaboration = "", + title = "Reduced temperature growth of crystalline 3{C}-Si{C} + films on 6{H}-Si{C} by chemical vapor deposition from + silacyclobutane", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "2", + pages = "1271--1273", + keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION + EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD; + SPECTROPHOTOMETRY", + URL = "http://link.aip.org/link/?JAP/78/1271/1", + doi = "10.1063/1.360368", + notes = "3c-sic on 6h-sic, cvd, reduced temperature", +} + +@Article{fissel95, + title = "Epitaxial growth of Si{C} thin films on Si-stabilized + [alpha]-Si{C}(0001) at low temperatures by solid-source + molecular beam epitaxy", + journal = "Journal of Crystal Growth", + volume = "154", + number = "1-2", + pages = "72--80", + year = "1995", + notes = "solid source mbe", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)00170-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", + author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter + and W. Richter", +} + +@Article{borders71, + author = "J. A. Borders and S. T. Picraux and W. Beezhold", + collaboration = "", + title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION} + {IMPLANTATION}", + publisher = "AIP", + year = "1971", + journal = "Applied Physics Letters", + volume = "18", + number = "11", + pages = "509--511", + URL = "http://link.aip.org/link/?APL/18/509/1", + notes = "first time sic by ibs", + doi = "10.1063/1.1653516", +} + +@Article{reeson87, + author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and + J. Davis and G. E. Celler", + collaboration = "", + title = "Formation of buried layers of beta-Si{C} using ion + beam synthesis and incoherent lamp annealing", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "51", + number = "26", + pages = "2242--2244", + keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION + IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS", + URL = "http://link.aip.org/link/?APL/51/2242/1", + doi = "10.1063/1.98953", + notes = "nice tem images, sic by ibs", +} + +@Article{scace59, + author = "R. I. Scace and G. A. Slack", + collaboration = "", + title = "Solubility of Carbon in Silicon and Germanium", + publisher = "AIP", + year = "1959", + journal = "The Journal of Chemical Physics", + volume = "30", + number = "6", + pages = "1551--1555", + URL = "http://link.aip.org/link/?JCP/30/1551/1", + doi = "10.1063/1.1730236", + notes = "solubility of c in c-si", +} + +@Article{cowern96, + author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and + F. W. Saris and W. Vandervorst", + collaboration = "", + title = "Role of {C} and {B} clusters in transient diffusion of + {B} in silicon", + publisher = "AIP", + year = "1996", + journal = "Applied Physics Letters", + volume = "68", + number = "8", + pages = "1150--1152", + keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING; + DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS; + SILICON", + URL = "http://link.aip.org/link/?APL/68/1150/1", + doi = "10.1063/1.115706", + notes = "suppression of transient enhanced diffusion (ted)", +} + +@Article{stolk95, + title = "Implantation and transient boron diffusion: the role + of the silicon self-interstitial", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "96", + number = "1-2", + pages = "187--195", + year = "1995", + note = "Selected Papers of the Tenth International Conference + on Ion Implantation Technology (IIT '94)", + ISSN = "0168-583X", + doi = "DOI: 10.1016/0168-583X(94)00481-1", + URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c", + author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham + and J. M. Poate", +} + +@Article{stolk97, + author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and + D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and + M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T. + E. Haynes", + collaboration = "", + title = "Physical mechanisms of transient enhanced dopant + diffusion in ion-implanted silicon", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "81", + number = "9", + pages = "6031--6050", + URL = "http://link.aip.org/link/?JAP/81/6031/1", + doi = "10.1063/1.364452", + notes = "ted, transient enhanced diffusion, c silicon trap", +} + +@Article{powell94, + author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", + collaboration = "", + title = "Formation of beta-Si{C} nanocrystals by the relaxation + of Si[sub 1 - y]{C}[sub y] random alloy layers", + publisher = "AIP", + year = "1994", + journal = "Applied Physics Letters", + volume = "64", + number = "3", + pages = "324--326", + keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS; + EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING; + TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS; + SYNTHESIS", + URL = "http://link.aip.org/link/?APL/64/324/1", + doi = "10.1063/1.111195", + notes = "beta sic nano crystals in si, mbe, annealing", +} + +@Article{soref91, + author = "Richard A. Soref", + collaboration = "", + title = "Optical band gap of the ternary semiconductor Si[sub 1 + - x - y]Ge[sub x]{C}[sub y]", + publisher = "AIP", + year = "1991", + journal = "Journal of Applied Physics", + volume = "70", + number = "4", + pages = "2470--2472", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP; + OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS; + TERNARY ALLOYS", + URL = "http://link.aip.org/link/?JAP/70/2470/1", + doi = "10.1063/1.349403", + notes = "band gap of strained si by c", +} + +@Article{kasper91, + author = "E Kasper", + title = "Superlattices of group {IV} elements, a new + possibility to produce direct band gap material", + journal = "Physica Scripta", + volume = "T35", + pages = "232--236", + URL = "http://stacks.iop.org/1402-4896/T35/232", + year = "1991", + notes = "superlattices, convert indirect band gap into a + quasi-direct one", +} + +@Article{osten99, + author = "H. J. Osten and J. Griesche and S. Scalese", + collaboration = "", + title = "Substitutional carbon incorporation in epitaxial + Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by + molecular beam epitaxy", + publisher = "AIP", + year = "1999", + journal = "Applied Physics Letters", + volume = "74", + number = "6", + pages = "836--838", + keywords = "molecular beam epitaxial growth; semiconductor growth; + wide band gap semiconductors; interstitials; silicon + compounds", + URL = "http://link.aip.org/link/?APL/74/836/1", + doi = "10.1063/1.123384", + notes = "substitutional c in si", +} + +@Article{hohenberg64, + title = "Inhomogeneous Electron Gas", + author = "P. Hohenberg and W. Kohn", + journal = "Phys. 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