X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=2b36164a4cbdbdf18f317d6f08141dd2f67667db;hp=c6cbfd42a3e1c0f58c1ecefedfb5d1b0cfb03ed3;hb=49306f3bc88923d98a69410e35f1f9363628229f;hpb=2e9f029839026138444ba2c037bdf78a5e1d1f54 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index c6cbfd4..2b36164 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -2,562 +2,1851 @@ % bibliography database % -% molecular dynamics: basics / potential - -@article{albe_sic_pot, - author = {Paul Erhart and Karsten Albe}, - title = {Analytical potential for atomistic simulations of silicon, carbon, - and silicon carbide}, - publisher = {APS}, - year = {2005}, - journal = {Phys. Rev. B}, - volume = {71}, - number = {3}, - eid = {035211}, - numpages = {14}, - pages = {035211}, - notes = {alble reparametrization, analytical bond oder potential (ABOP)}, - keywords = {silicon; elemental semiconductors; carbon; silicon compounds; - wide band gap semiconductors; elasticity; enthalpy; - point defects; crystallographic shear; atomic forces}, - url = {http://link.aps.org/abstract/PRB/v71/e035211}, - doi = {10.1103/PhysRevB.71.035211} +@Article{albe_sic_pot, + author = "Paul Erhart and Karsten Albe", + title = "Analytical potential for atomistic simulations of + silicon, carbon, and silicon carbide", + publisher = "APS", + year = "2005", + journal = "Phys. Rev. B", + volume = "71", + number = "3", + eid = "035211", + numpages = "14", + pages = "035211", + notes = "alble reparametrization, analytical bond oder + potential (ABOP)", + keywords = "silicon; elemental semiconductors; carbon; silicon + compounds; wide band gap semiconductors; elasticity; + enthalpy; point defects; crystallographic shear; atomic + forces", + URL = "http://link.aps.org/abstract/PRB/v71/e035211", + doi = "10.1103/PhysRevB.71.035211", } @Article{albe2002, - title = {Modeling the metal-semiconductor interaction: - Analytical bond-order potential for platinum-carbon}, - author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.}, - journal = {Phys. Rev. B}, - volume = {65}, - number = {19}, - pages = {195124}, - numpages = {11}, - year = {2002}, - month = {May}, - doi = {10.1103/PhysRevB.65.195124}, - publisher = {American Physical Society}, - notes = {derivation of albe bond order formalism}, -} - -@ARTICLE{mattoni2007, - author = {{Mattoni}, A. and {Ippolito}, M. and {Colombo}, L.}, - title = "{Atomistic modeling of brittleness in covalent materials}", - journal = {Phys. Rev. B}, - year = 2007, - month = dec, - volume = 76, - number = 22, - pages = {224103-+}, - doi = {10.1103/PhysRevB.76.224103}, - notes = {adopted tersoff potential for Si, C, Ge ad SiC; - longe(r)-range-interactions, brittle propagation of fracture, - more available potentials, universal energy relation (uer), - minimum range model (mrm)} + title = "Modeling the metal-semiconductor interaction: + Analytical bond-order potential for platinum-carbon", + author = "Karsten Albe and Kai Nordlund and Robert S. Averback", + journal = "Phys. Rev. B", + volume = "65", + number = "19", + pages = "195124", + numpages = "11", + year = "2002", + month = may, + doi = "10.1103/PhysRevB.65.195124", + publisher = "American Physical Society", + notes = "derivation of albe bond order formalism", +} + +@Article{bean71, + author = "A. R. Bean and R. C. Newman", + title = "", + journal = "J. Phys. Chem. Solids", + volume = "32", + pages = "1211", + year = "1971", + notes = "experimental solubility data of carbon in silicon", +} + +@Article{capano97, + author = "M. A. Capano and R. J. Trew", + title = "Silicon Carbide Electronic Materials and Devices", + journal = "MRS Bull.", + volume = "22", + pages = "19", + year = "1997", +} + +@Article{fischer90, + author = "G. R. Fisher and P. Barnes", + title = "Towards a unified view of polytypism in silicon + carbide", + journal = "Philosophical Magazine Part B", + volume = "61", + pages = "217--236", + year = "1990", + notes = "sic polytypes", +} + +@Book{laplace, + author = "P. S. de Laplace", + title = "Th\'eorie analytique des probabilit\'es", + series = "Oeuvres Compl\`etes de Laplace", + volume = "VII", + publisher = "Gauthier-Villars", + year = "1820", +} + +@Article{mattoni2007, + author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}", + title = "{Atomistic modeling of brittleness in covalent + materials}", + journal = "Phys. Rev. B", + year = "2007", + month = dec, + volume = "76", + number = "22", + pages = "224103", + doi = "10.1103/PhysRevB.76.224103", + notes = "adopted tersoff potential for Si, C, Ge ad SiC; + longe(r)-range-interactions, brittle propagation of + fracture, more available potentials, universal energy + relation (uer), minimum range model (mrm)", +} + +@Article{balamane92, + title = "Comparative study of silicon empirical interatomic + potentials", + author = "H. Balamane and T. Halicioglu and W. A. Tiller", + journal = "Phys. Rev. B", + volume = "46", + number = "4", + pages = "2250--2279", + numpages = "29", + year = "1992", + month = jul, + doi = "10.1103/PhysRevB.46.2250", + publisher = "American Physical Society", + notes = "comparison of classical potentials for si", } @Article{koster2002, - title = {Stress relaxation in $a-Si$ induced by ion bombardment}, - author = {M. Koster, H. M. Urbassek}, - journal = {Phys. Rev. B}, - volume = {62}, - number = {16}, - pages = {11219--11224}, - numpages = {5}, - year = {2000}, - month = {Oct}, - doi = {10.1103/PhysRevB.62.11219}, - publisher = {American Physical Society}, - notes = {virial derivation for 3-body tersoff potential} + title = "Stress relaxation in $a-Si$ induced by ion + bombardment", + author = "H. M. Urbassek M. Koster", + journal = "Phys. Rev. B", + volume = "62", + number = "16", + pages = "11219--11224", + numpages = "5", + year = "2000", + month = oct, + doi = "10.1103/PhysRevB.62.11219", + publisher = "American Physical Society", + notes = "virial derivation for 3-body tersoff potential", } @Article{breadmore99, - title = {Direct simulation of ion-beam-induced stressing - and amorphization of silicon}, - author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen}, - journal = {Phys. Rev. B}, - volume = {60}, - number = {18}, - pages = {12610--12616}, - numpages = {6}, - year = {1999}, - month = {Nov}, - doi = {10.1103/PhysRevB.60.12610}, - publisher = {American Physical Society}, - notes = {virial derivation for 3-body tersoff potential} + title = "Direct simulation of ion-beam-induced stressing and + amorphization of silicon", + author = "N. Gr\o{}nbech-Jensen K. M. Beardmore", + journal = "Phys. Rev. B", + volume = "60", + number = "18", + pages = "12610--12616", + numpages = "6", + year = "1999", + month = nov, + doi = "10.1103/PhysRevB.60.12610", + publisher = "American Physical Society", + notes = "virial derivation for 3-body tersoff potential", +} + +@Article{moissan04, + author = "Henri Moissan", + title = "Nouvelles recherches sur la météorité de Cañon + Diablo", + journal = "Comptes rendus de l'Académie des Sciences", + volume = "139", + pages = "773--786", + year = "1904", +} + +@Book{park98, + author = "Y. S. Park", + title = "Si{C} Materials and Devices", + publisher = "Academic Press", + address = "San Diego", + year = "1998", +} + +@Article{tsvetkov98, + author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and + Calvin H. Carter Jr. and D. Asbury", + title = "Si{C} Seeded Boule Growth", + journal = "Materials Science Forum", + volume = "264-268", + pages = "3--8", + year = "1998", + notes = "modified lely process, micropipes", } @Article{verlet67, - title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules}, - author = {Verlet, Loup }, - journal = {Phys. Rev.}, - volume = {159}, - number = {1}, - pages = {98}, - year = {1967}, - month = {Jul}, - doi = {10.1103/PhysRev.159.98}, - publisher = {American Physical Society}, - notes = {velocity verlet integration algorithm equation of motion} -} - -@article{berendsen84, - author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren - and A. DiNola and J. R. Haak}, - collaboration = {}, - title = {Molecular dynamics with coupling to an external bath}, - publisher = {AIP}, - year = {1984}, - journal = {The Journal of Chemical Physics}, - volume = {81}, - number = {8}, - pages = {3684-3690}, - keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY; - COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS}, - url = {http://link.aip.org/link/?JCP/81/3684/1}, - doi = {10.1063/1.448118}, - notes = {berendsen thermostat barostat} -} - -@article{huang95, - author={Hanchen Huang and N M Ghoniem and J K Wong and M Baskes}, - title={Molecular dynamics determination of defect energetics in beta -SiC - using three representative empirical potentials}, - journal={Modelling and Simulation in Materials Science and Engineering}, - volume={3}, - number={5}, - pages={615-627}, - url={http://stacks.iop.org/0965-0393/3/615}, - notes = {comparison of tersoff, pearson and eam for defect energetics in sic; - (m)eam parameters for sic}, - year={1995} + title = "Computer {"}Experiments{"} on Classical Fluids. {I}. + Thermodynamical Properties of Lennard-Jones Molecules", + author = "Loup Verlet", + journal = "Phys. Rev.", + volume = "159", + number = "1", + pages = "98", + year = "1967", + month = jul, + doi = "10.1103/PhysRev.159.98", + publisher = "American Physical Society", + notes = "velocity verlet integration algorithm equation of + motion", +} + +@Article{berendsen84, + author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van + Gunsteren and A. DiNola and J. R. Haak", + collaboration = "", + title = "Molecular dynamics with coupling to an external bath", + publisher = "AIP", + year = "1984", + journal = "The Journal of Chemical Physics", + volume = "81", + number = "8", + pages = "3684--3690", + keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY; + COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS", + URL = "http://link.aip.org/link/?JCP/81/3684/1", + doi = "10.1063/1.448118", + notes = "berendsen thermostat barostat", +} + +@Article{huang95, + author = "Hanchen Huang and N M Ghoniem and J K Wong and M + Baskes", + title = "Molecular dynamics determination of defect energetics + in beta -Si{C} using three representative empirical + potentials", + journal = "Modelling and Simulation in Materials Science and + Engineering", + volume = "3", + number = "5", + pages = "615--627", + URL = "http://stacks.iop.org/0965-0393/3/615", + notes = "comparison of tersoff, pearson and eam for defect + energetics in sic; (m)eam parameters for sic", + year = "1995", } @Article{tersoff89, - title = {Relationship between the embedded-atom method and - Tersoff potentials}, - author = {Brenner, Donald W.}, - journal = {Phys. Rev. Lett.}, - volume = {63}, - number = {9}, - pages = {1022}, - numpages = {1}, - year = {1989}, - month = {Aug}, - doi = {10.1103/PhysRevLett.63.1022}, - publisher = {American Physical Society}, - notes = {relation of tersoff and eam potential} -} - -% molecular dynamics: applications + title = "Relationship between the embedded-atom method and + Tersoff potentials", + author = "Donald W. Brenner", + journal = "Phys. Rev. Lett.", + volume = "63", + number = "9", + pages = "1022", + numpages = "1", + year = "1989", + month = aug, + doi = "10.1103/PhysRevLett.63.1022", + publisher = "American Physical Society", + notes = "relation of tersoff and eam potential", +} @Article{batra87, - title = {Molecular-dynamics study of self-interstitials in silicon}, - author = {Inder P. Batra, Farid F. Abraham, S. Ciraci}, - journal = {Phys. Rev. B}, - volume = {35}, - number = {18}, - pages = {9552--9558}, - numpages = {6}, - year = {1987}, - month = {Jun}, - doi = {10.1103/PhysRevB.35.9552}, - publisher = {American Physical Society}, - notes = {selft-interstitials in silicon, stillinger-weber, - calculation of defect formation energy, defect interstitial types} + title = "Molecular-dynamics study of self-interstitials in + silicon", + author = "Inder P. Batra and Farid F. Abraham and S. Ciraci", + journal = "Phys. Rev. B", + volume = "35", + number = "18", + pages = "9552--9558", + numpages = "6", + year = "1987", + month = jun, + doi = "10.1103/PhysRevB.35.9552", + publisher = "American Physical Society", + notes = "selft-interstitials in silicon, stillinger-weber, + calculation of defect formation energy, defect + interstitial types", } @Article{schober89, - title = {Extended interstitials in silicon and germanium}, - author = {H. R. Schober}, - journal = {Phys. Rev. B}, - volume = {39}, - number = {17}, - pages = {13013--13015}, - numpages = {2}, - year = {1989}, - month = {Jun}, - doi = {10.1103/PhysRevB.39.13013}, - publisher = {American Physical Society}, - notes = {stillinger-weber silicon 110 stable and metastable dumbbell - configuration} + title = "Extended interstitials in silicon and germanium", + author = "H. R. Schober", + journal = "Phys. Rev. B", + volume = "39", + number = "17", + pages = "13013--13015", + numpages = "2", + year = "1989", + month = jun, + doi = "10.1103/PhysRevB.39.13013", + publisher = "American Physical Society", + notes = "stillinger-weber silicon 110 stable and metastable + dumbbell configuration", } @Article{gao02, - title = {Cascade overlap and amorphization in $3C-SiC:$ - Defect accumulation, topological features, and disordering}, - author = {Gao, F. and Weber, W. J.}, - journal = {Phys. Rev. B}, - volume = {66}, - number = {2}, - pages = {024106}, - numpages = {10}, - year = {2002}, - month = {Jul}, - doi = {10.1103/PhysRevB.66.024106}, - publisher = {American Physical Society}, - note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified, - pair correlation of amorphous sic, md result analyze} + title = "Cascade overlap and amorphization in $3{C}-Si{C}:$ + Defect accumulation, topological features, and + disordering", + author = "F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "66", + number = "2", + pages = "024106", + numpages = "10", + year = "2002", + month = jul, + doi = "10.1103/PhysRevB.66.024106", + publisher = "American Physical Society", + notes = "sic intro, si cascade in 3c-sic, amorphization, + tersoff modified, pair correlation of amorphous sic, md + result analyze", } @Article{devanathan98, - title = "Computer simulation of a 10 keV Si displacement cascade in SiC", - journal = "Nuclear Instruments and Methods in Physics Research Section B: - Beam Interactions with Materials and Atoms", - volume = "141", - number = "1-4", - pages = "118 - 122", - year = "1998", - note = "", - issn = "0168-583X", - doi = "DOI: 10.1016/S0168-583X(98)00084-6", - author = "R. Devanathan and W. J. Weber and T. Diaz de la Rubia", - notes = {modified tersoff short range potential, ab initio 3c-sic} + title = "Computer simulation of a 10 ke{V} Si displacement + cascade in Si{C}", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "141", + number = "1-4", + pages = "118--122", + year = "1998", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00084-6", + author = "R. Devanathan and W. J. Weber and T. Diaz de la + Rubia", + notes = "modified tersoff short range potential, ab initio + 3c-sic", } @Article{devanathan98_2, - title = "Displacement threshold energies in [beta]-SiC", - journal = "Journal of Nuclear Materials", - volume = "253", - number = "1-3", - pages = "47 - 52", - year = "1998", - issn = "0022-3115", - doi = "DOI: 10.1016/S0022-3115(97)00304-8", - author = "R. Devanathan and T. Diaz de la Rubia and W. J. Weber", - notes = "modified tersoff, ab initio, combined ab initio tersoff" + title = "Displacement threshold energies in [beta]-Si{C}", + journal = "Journal of Nuclear Materials", + volume = "253", + number = "1-3", + pages = "47--52", + year = "1998", + ISSN = "0022-3115", + doi = "DOI: 10.1016/S0022-3115(97)00304-8", + author = "R. Devanathan and T. Diaz de la Rubia and W. J. + Weber", + notes = "modified tersoff, ab initio, combined ab initio + tersoff", } @Article{batra87, - title = {SiC/Si heteroepitaxial growth}, - author = {M. Kitabatake}, - journal = {Thin Solid Films}, - volume = {369}, - pages = {257--264}, - numpages = {8}, - year = {2000}, - notes = {md simulation, sic si heteroepitaxy, mbe} + title = "Si{C}/Si heteroepitaxial growth", + author = "M. Kitabatake", + journal = "Thin Solid Films", + volume = "369", + pages = "257--264", + numpages = "8", + year = "2000", + notes = "md simulation, sic si heteroepitaxy, mbe", } -% tight binding - @Article{tang97, - title = {Intrinsic point defects in crystalline silicon: - Tight-binding molecular dynamics studies of self-diffusion, - interstitial-vacancy recombination, and formation volumes}, - author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia}, - journal = {Phys. Rev. B}, - volume = {55}, - number = {21}, - pages = {14279--14289}, - numpages = {10}, - year = {1997}, - month = {Jun}, - doi = {10.1103/PhysRevB.55.14279}, - publisher = {American Physical Society}, - notes = {si self interstitial, diffusion, tbmd} + title = "Intrinsic point defects in crystalline silicon: + Tight-binding molecular dynamics studies of + self-diffusion, interstitial-vacancy recombination, and + formation volumes", + author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la + Rubia", + journal = "Phys. Rev. B", + volume = "55", + number = "21", + pages = "14279--14289", + numpages = "10", + year = "1997", + month = jun, + doi = "10.1103/PhysRevB.55.14279", + publisher = "American Physical Society", + notes = "si self interstitial, diffusion, tbmd", } @Article{tang97, - title = {Tight-binding theory of native point defects in silicon}, - author = {L. Colombo}, - journal = {Annu. Rev. Mater. Res.}, - volume = {32}, - pages = {271--295}, - numpages = {25}, - year = {2002}, - doi = {10.1146/annurev.matsci.32.111601.103036}, - publisher = {Annual Reviews}, - notes = {si self interstitial, tbmd, virial stress} + title = "Tight-binding theory of native point defects in + silicon", + author = "L. Colombo", + journal = "Annu. Rev. Mater. Res.", + volume = "32", + pages = "271--295", + numpages = "25", + year = "2002", + doi = "10.1146/annurev.matsci.32.111601.103036", + publisher = "Annual Reviews", + notes = "si self interstitial, tbmd, virial stress", +} + +@Article{al-mushadani03, + title = "Free-energy calculations of intrinsic point defects in + silicon", + author = "O. K. Al-Mushadani and R. J. Needs", + journal = "Phys. Rev. B", + volume = "68", + number = "23", + pages = "235205", + numpages = "8", + year = "2003", + month = dec, + doi = "10.1103/PhysRevB.68.235205", + publisher = "American Physical Society", + notes = "formation energies of intrinisc point defects in + silicon, si self interstitials", } -% mixed +@Article{ma10, + title = "Ab initio study of self-diffusion in silicon over a + wide temperature range: Point defect states and + migration mechanisms", + author = "Shangyi Ma and Shaoqing Wang", + journal = "Phys. Rev. B", + volume = "81", + number = "19", + pages = "193203", + numpages = "4", + year = "2010", + month = may, + doi = "10.1103/PhysRevB.81.193203", + publisher = "American Physical Society", + notes = "si self interstitial diffusion + refs", +} @Article{gao2001, - title = {Ab initio and empirical-potential studies of defect properties - in $3C-SiC$ }, - author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales}, - journal = {Phys. Rev. B}, - volume = {64}, - number = {24}, - pages = {245208}, - numpages = {7}, - year = {2001}, - month = {Dec}, - doi = {10.1103/PhysRevB.64.245208}, - publisher = {American Physical Society}, - notes = {defects in 3c-sic} + title = "Ab initio and empirical-potential studies of defect + properties in $3{C}-Si{C}$", + author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R. + Corrales", + journal = "Phys. Rev. B", + volume = "64", + number = "24", + pages = "245208", + numpages = "7", + year = "2001", + month = dec, + doi = "10.1103/PhysRevB.64.245208", + publisher = "American Physical Society", + notes = "defects in 3c-sic", } @Article{mattoni2002, - title = {Self-interstitial trapping by carbon complexes in crystalline silicon}, - author = {Mattoni, A. and Bernardini, F. and Colombo, L. }, - journal = {Phys. Rev. B}, - volume = {66}, - number = {19}, - pages = {195214}, - numpages = {6}, - year = {2002}, - month = {Nov}, - doi = {10.1103/PhysRevB.66.195214}, - publisher = {American Physical Society}, - notes = {c in c-si, diffusion, interstitial configuration + links} -} - -% ab initio + title = "Self-interstitial trapping by carbon complexes in + crystalline silicon", + author = "A. Mattoni and F. Bernardini and L. Colombo", + journal = "Phys. Rev. B", + volume = "66", + number = "19", + pages = "195214", + numpages = "6", + year = "2002", + month = nov, + doi = "10.1103/PhysRevB.66.195214", + publisher = "American Physical Society", + notes = "c in c-si, diffusion, interstitial configuration + + links, interaction of carbon and silicon + interstitials", +} @Article{leung99, - title = {Calculations of Silicon Self-Interstitial Defects}, - author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and - Itoh, S. and Ihara, S. }, - journal = {Phys. Rev. Lett.}, - volume = {83}, - number = {12}, - pages = {2351--2354}, - numpages = {3}, - year = {1999}, - month = {Sep}, - doi = {10.1103/PhysRevLett.83.2351}, - publisher = {American Physical Society}, - notes = {nice images of the defects} -} - -@Article{capazd94, - title = {Identification of the migration path of interstitial carbon - in silicon}, - author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos}, - journal = {Phys. Rev. B}, - volume = {50}, - number = {11}, - pages = {7439--7442}, - numpages = {3}, - year = {1994}, - month = {Sep}, - doi = {10.1103/PhysRevB.50.7439}, - publisher = {American Physical Society}, - notes = {carbon interstitial migration path shown, 001 c-si dumbbell} + title = "Calculations of Silicon Self-Interstitial Defects", + author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S. + Itoh and S. Ihara", + journal = "Phys. Rev. Lett.", + volume = "83", + number = "12", + pages = "2351--2354", + numpages = "3", + year = "1999", + month = sep, + doi = "10.1103/PhysRevLett.83.2351", + publisher = "American Physical Society", + notes = "nice images of the defects, si defect overview + + refs", +} + +@Article{capaz94, + title = "Identification of the migration path of interstitial + carbon in silicon", + author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "50", + number = "11", + pages = "7439--7442", + numpages = "3", + year = "1994", + month = sep, + doi = "10.1103/PhysRevB.50.7439", + publisher = "American Physical Society", + notes = "carbon interstitial migration path shown, 001 c-si + dumbbell", +} + +@Article{dal_pino93, + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. Dal Pino and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", } @Article{car84, - title = {Microscopic Theory of Atomic Diffusion Mechanisms in Silicon}, - author = {Car, Roberto and Kelly, Paul J. and Oshiyama, Atsushi - and Pantelides, Sokrates T.}, - journal = {Phys. Rev. Lett.}, - volume = {52}, - number = {20}, - pages = {1814--1817}, - numpages = {3}, - year = {1984}, - month = {May}, - doi = {10.1103/PhysRevLett.52.1814}, - publisher = {American Physical Society}, - notes = {microscopic theory diffusion silicon dft migration path formation} -} - -% monte carlo md + title = "Microscopic Theory of Atomic Diffusion Mechanisms in + Silicon", + author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and + Sokrates T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "52", + number = "20", + pages = "1814--1817", + numpages = "3", + year = "1984", + month = may, + doi = "10.1103/PhysRevLett.52.1814", + publisher = "American Physical Society", + notes = "microscopic theory diffusion silicon dft migration + path formation", +} @Article{kelires97, - title = {Short-range order, bulk moduli, - and physical trends in c-$Si1-x$$Cx$ alloys }, - author = {Kelires, P. C. }, - journal = {Phys. Rev. B}, - volume = {55}, - number = {14}, - pages = {8784--8787}, - numpages = {3}, - year = {1997}, - month = {Apr}, - doi = {10.1103/PhysRevB.55.8784}, - publisher = {American Physical Society}, - notes = {c strained si, montecarlo md, bulk moduli, next neighbour dist} + title = "Short-range order, bulk moduli, and physical trends in + c-$Si1-x$$Cx$ alloys", + author = "P. C. Kelires", + journal = "Phys. Rev. B", + volume = "55", + number = "14", + pages = "8784--8787", + numpages = "3", + year = "1997", + month = apr, + doi = "10.1103/PhysRevB.55.8784", + publisher = "American Physical Society", + notes = "c strained si, montecarlo md, bulk moduli, next + neighbour dist", } @Article{kelires95, - title = {Monte Carlo Studies of Ternary Semiconductor Alloys: - Application to the $Si1-x-yGexCy$ System}, - author = {Kelires, P. C.}, - journal = {Phys. Rev. Lett.}, - volume = {75}, - number = {6}, - pages = {1114--1117}, - numpages = {3}, - year = {1995}, - month = {Aug}, - doi = {10.1103/PhysRevLett.75.1114}, - publisher = {American Physical Society}, - notes = {mc md, strain compensation in si ge by c insertion} -} - -% experimental stuff - interstitials + title = "Monte Carlo Studies of Ternary Semiconductor Alloys: + Application to the $Si1-x-yGexCy$ System", + author = "P. C. Kelires", + journal = "Phys. Rev. Lett.", + volume = "75", + number = "6", + pages = "1114--1117", + numpages = "3", + year = "1995", + month = aug, + doi = "10.1103/PhysRevLett.75.1114", + publisher = "American Physical Society", + notes = "mc md, strain compensation in si ge by c insertion", +} + +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Communications", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} @Article{watkins76, - title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon}, - author = {G. D. Watkins and K. L. Brower}, - journal = {Phys. Rev. Lett.}, - volume = {36}, - number = {22}, - pages = {1329--1332}, - numpages = {3}, - year = {1976}, - month = {May}, - doi = {10.1103/PhysRevLett.36.1329}, - publisher = {American Physical Society}, - notes = {epr observations of 100 interstitial carbon atom in silicon} + title = "{EPR} Observation of the Isolated Interstitial Carbon + Atom in Silicon", + author = "G. D. Watkins and K. L. Brower", + journal = "Phys. Rev. Lett.", + volume = "36", + number = "22", + pages = "1329--1332", + numpages = "3", + year = "1976", + month = may, + doi = "10.1103/PhysRevLett.36.1329", + publisher = "American Physical Society", + notes = "epr observations of 100 interstitial carbon atom in + silicon", } @Article{song90, - title = {EPR identification of the single-acceptor state of interstitial carbon in silicon}, - author = {L. W. Song, G. D. Watkins}, - journal = {Phys. Rev. B}, - volume = {42}, - number = {9}, - pages = {5759--5764}, - numpages = {5}, - year = {1990}, - month = {Sep}, - doi = {10.1103/PhysRevB.42.5759}, - publisher = {American Physical Society} + title = "{EPR} identification of the single-acceptor state of + interstitial carbon in silicon", + author = "G. D. Watkins L. W. Song", + journal = "Phys. Rev. B", + volume = "42", + number = "9", + pages = "5759--5764", + numpages = "5", + year = "1990", + month = sep, + doi = "10.1103/PhysRevB.42.5759", + publisher = "American Physical Society", + notes = "carbon diffusion in silicon", } -% experimental stuff - strained silicon +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semiconductor Science and Technology", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", +} @Article{strane96, - title = {Carbon incorporation into Si at high concentrations - by ion implantation and solid phase epitaxy}, - author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and - J. K. Watanabe and J. W. Mayer}, - journal = {J. Appl. Phys.}, - volume = {79}, - pages = {637}, - year = {1996}, - month = {January}, - doi = {10.1063/1.360806}, - notes = {strained silicon, carbon supersaturation} -} - -@article{laveant2002, - title = {Epitaxy of carbon-rich silicon with MBE}, - author = {P. Laveant, G. Gerth, P. Werner, U. Gosele}, - journal = {Materials Science and Engineering B}, - volume = {89}, - number = {1-3}, - pages = {241-245}, - keywords = {Growth; Epitaxy; MBE; Carbon; Silicon}, - notes = {low c in si, tensile stress to compensate compressive stress, - avoid sic precipitation}} -} - -% sic formation mechanism - -@article{werner97, - author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa}, - title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy}, - publisher = {AIP}, - year = {1997}, - journal = {Applied Physics Letters}, - volume = {70}, - number = {2}, - pages = {252-254}, - keywords = {silicon; ion implantation; carbon; crystal defects; - transmission electron microscopy; annealing; - positron annihilation; secondary ion mass spectroscopy; - buried layers; precipitation}, - url = {http://link.aip.org/link/?APL/70/252/1}, - doi = {10.1063/1.118381}, - notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate} -} - -@article{strane94, - author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and - J. K. Watanabe and J. W. Mayer}, - collaboration = {}, - title = {Precipitation and relaxation in strained - Si[sub 1 - y]C[sub y]/Si heterostructures}, - publisher = {AIP}, - year = {1994}, - journal = {Journal of Applied Physics}, - volume = {76}, - number = {6}, - pages = {3656-3668}, - keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS}, - url = {http://link.aip.org/link/?JAP/76/3656/1}, - doi = {10.1063/1.357429}, - notes = {strained si-c to 3c-sic, carbon nucleation + refs} -} - -% properties sic + title = "Carbon incorporation into Si at high concentrations by + ion implantation and solid phase epitaxy", + author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T. + Picraux and J. K. Watanabe and J. W. Mayer", + journal = "J. Appl. Phys.", + volume = "79", + pages = "637", + year = "1996", + month = jan, + doi = "10.1063/1.360806", + notes = "strained silicon, carbon supersaturation", +} + +@Article{laveant2002, + title = "Epitaxy of carbon-rich silicon with {MBE}", + author = "P. Laveant and G. Gerth and P. Werner and U. + G{\"o}sele", + journal = "Materials Science and Engineering B", + volume = "89", + number = "1-3", + pages = "241--245", + keywords = "Growth; Epitaxy; MBE; Carbon; Silicon", + notes = "low c in si, tensile stress to compensate compressive + stress, avoid sic precipitation", +} + +@Article{werner97, + author = "P. Werner and S. Eichler and G. Mariani and R. + K{\"{o}}gler and W. Skorupa", + title = "Investigation of {C}[sub x]Si defects in {C} implanted + silicon by transmission electron microscopy", + publisher = "AIP", + year = "1997", + journal = "Applied Physics Letters", + volume = "70", + number = "2", + pages = "252--254", + keywords = "silicon; ion implantation; carbon; crystal defects; + transmission electron microscopy; annealing; positron + annihilation; secondary ion mass spectroscopy; buried + layers; precipitation", + URL = "http://link.aip.org/link/?APL/70/252/1", + doi = "10.1063/1.118381", + notes = "si-c complexes, agglomerate, sic in si matrix, sic + precipitate", +} + +@Article{strane94, + author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. + Picraux and J. K. Watanabe and J. W. Mayer", + collaboration = "", + title = "Precipitation and relaxation in strained Si[sub 1 - + y]{C}[sub y]/Si heterostructures", + publisher = "AIP", + year = "1994", + journal = "Journal of Applied Physics", + volume = "76", + number = "6", + pages = "3656--3668", + keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", + URL = "http://link.aip.org/link/?JAP/76/3656/1", + doi = "10.1063/1.357429", + notes = "strained si-c to 3c-sic, carbon nucleation + refs", +} @Article{edgar92, - title = {Prospects for device implementation of wide band gap semiconductors}, - author = {J. H. Edgar}, - journal = {J. Mater. Res.}, - volume = {7}, - pages = {235}, - year = {1992}, - month = {January}, - doi = {10.1557/JMR.1992.0235}, - notes = {properties wide band gap semiconductor, sic polytypes} -} - -% my own publications - -@article{zirkelbach2007, - title = {Monte Carlo simulation study of a selforganisation process - leading to ordered precipitate structures}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. Instr. and Meth. B}, - volume = {257}, - number = {1--2}, - pages = {75--79}, - numpages = {5}, - year = {2007}, - month = {Apr}, - doi = {doi:10.1016/j.nimb.2006.12.118}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -@article{zirkelbach2006, - title = {Monte-Carlo simulation study of the self-organization of nanometric - amorphous precipitates in regular arrays during ion irradiation}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. Instr. and Meth. B}, - volume = {242}, - number = {1--2}, - pages = {679--682}, - numpages = {4}, - year = {2006}, - month = {Jan}, - doi = {doi:10.1016/j.nimb.2005.08.162}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -@article{zirkelbach2005, - title = {Modelling of a selforganization process leading to periodic arrays - of nanometric amorphous precipitates by ion irradiation}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Comp. Mater. Sci.}, - volume = {33}, - number = {1--3}, - pages = {310--316}, - numpages = {7}, - year = {2005}, - month = {Apr}, - doi = {doi:10.1016/j.commatsci.2004.12.016}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -% the one of my boss + title = "Prospects for device implementation of wide band gap + semiconductors", + author = "J. H. Edgar", + journal = "J. Mater. Res.", + volume = "7", + pages = "235", + year = "1992", + month = jan, + doi = "10.1557/JMR.1992.0235", + notes = "properties wide band gap semiconductor, sic + polytypes", +} + +@Article{zirkelbach2007, + title = "Monte Carlo simulation study of a selforganisation + process leading to ordered precipitate structures", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", + journal = "Nucl. Instr. and Meth. B", + volume = "257", + number = "1--2", + pages = "75--79", + numpages = "5", + year = "2007", + month = apr, + doi = "doi:10.1016/j.nimb.2006.12.118", + publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, + NETHERLANDS", +} + +@Article{zirkelbach2006, + title = "Monte-Carlo simulation study of the self-organization + of nanometric amorphous precipitates in regular arrays + during ion irradiation", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", + journal = "Nucl. Instr. and Meth. B", + volume = "242", + number = "1--2", + pages = "679--682", + numpages = "4", + year = "2006", + month = jan, + doi = "doi:10.1016/j.nimb.2005.08.162", + publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, + NETHERLANDS", +} + +@Article{zirkelbach2005, + title = "Modelling of a selforganization process leading to + periodic arrays of nanometric amorphous precipitates by + ion irradiation", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", + journal = "Comp. Mater. Sci.", + volume = "33", + number = "1--3", + pages = "310--316", + numpages = "7", + year = "2005", + month = apr, + doi = "doi:10.1016/j.commatsci.2004.12.016", + publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, + NETHERLANDS", +} + +@Article{lindner99, + title = "Controlling the density distribution of Si{C} + nanocrystals for the ion beam synthesis of buried Si{C} + layers in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "147", + number = "1-4", + pages = "249--255", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00598-9", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169", + author = "J. K. N. Lindner and B. Stritzker", + notes = "two-step implantation process", +} + +@Article{lindner99_2, + title = "Mechanisms in the ion beam synthesis of Si{C} layers + in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "148", + number = "1-4", + pages = "528--533", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00787-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", + author = "J. K. N. Lindner and B. Stritzker", +} + +@Article{lindner01, + title = "Ion beam synthesis of buried Si{C} layers in silicon: + Basic physical processes", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "178", + number = "1-4", + pages = "44--54", + year = "2001", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(01)00504-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", + author = "Jörg K. N. Lindner", +} @Article{lindner02, - title = {High-dose carbon implantations into silicon: - fundamental studies for new technological tricks}, - author = {J. K. N. Lindner}, - journal = {Appl. Phys. A}, - volume = {77}, - pages = {27--38}, - year = {2003}, - doi = {10.1007/s00339-002-2062-8}, - notes = {ibs, burried sic layers} + title = "High-dose carbon implantations into silicon: + fundamental studies for new technological tricks", + author = "J. K. N. Lindner", + journal = "Appl. Phys. A", + volume = "77", + pages = "27--38", + year = "2003", + doi = "10.1007/s00339-002-2062-8", + notes = "ibs, burried sic layers", } +@Article{alder57, + author = "B. J. Alder and T. E. Wainwright", + title = "Phase Transition for a Hard Sphere System", + publisher = "AIP", + year = "1957", + journal = "The Journal of Chemical Physics", + volume = "27", + number = "5", + pages = "1208--1209", + URL = "http://link.aip.org/link/?JCP/27/1208/1", + doi = "10.1063/1.1743957", +} + +@Article{alder59, + author = "B. J. Alder and T. E. Wainwright", + title = "Studies in Molecular Dynamics. {I}. General Method", + publisher = "AIP", + year = "1959", + journal = "The Journal of Chemical Physics", + volume = "31", + number = "2", + pages = "459--466", + URL = "http://link.aip.org/link/?JCP/31/459/1", + doi = "10.1063/1.1730376", +} + +@Article{tersoff_si1, + title = "New empirical model for the structural properties of + silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "56", + number = "6", + pages = "632--635", + numpages = "3", + year = "1986", + month = feb, + doi = "10.1103/PhysRevLett.56.632", + publisher = "American Physical Society", +} + +@Article{tersoff_si2, + title = "New empirical approach for the structure and energy of + covalent systems", + author = "J. Tersoff", + journal = "Phys. Rev. B", + volume = "37", + number = "12", + pages = "6991--7000", + numpages = "9", + year = "1988", + month = apr, + doi = "10.1103/PhysRevB.37.6991", + publisher = "American Physical Society", +} + +@Article{tersoff_si3, + title = "Empirical interatomic potential for silicon with + improved elastic properties", + author = "J. Tersoff", + journal = "Phys. Rev. B", + volume = "38", + number = "14", + pages = "9902--9905", + numpages = "3", + year = "1988", + month = nov, + doi = "10.1103/PhysRevB.38.9902", + publisher = "American Physical Society", +} + +@Article{tersoff_c, + title = "Empirical Interatomic Potential for Carbon, with + Applications to Amorphous Carbon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "61", + number = "25", + pages = "2879--2882", + numpages = "3", + year = "1988", + month = dec, + doi = "10.1103/PhysRevLett.61.2879", + publisher = "American Physical Society", +} + +@Article{tersoff_m, + title = "Modeling solid-state chemistry: Interatomic potentials + for multicomponent systems", + author = "J. Tersoff", + journal = "Phys. Rev. B", + volume = "39", + number = "8", + pages = "5566--5568", + numpages = "2", + year = "1989", + month = mar, + doi = "10.1103/PhysRevB.39.5566", + publisher = "American Physical Society", +} + +@Article{tersoff90, + title = "Carbon defects and defect reactions in silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "64", + number = "15", + pages = "1757--1760", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevLett.64.1757", + publisher = "American Physical Society", +} + +@Article{fahey89, + title = "Point defects and dopant diffusion in silicon", + author = "P. M. Fahey and P. B. Griffin and J. D. Plummer", + journal = "Rev. Mod. Phys.", + volume = "61", + number = "2", + pages = "289--384", + numpages = "95", + year = "1989", + month = apr, + doi = "10.1103/RevModPhys.61.289", + publisher = "American Physical Society", +} + +@Article{wesch96, + title = "Silicon carbide: synthesis and processing", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "116", + number = "1-4", + pages = "305--321", + year = "1996", + note = "Radiation Effects in Insulators", + ISSN = "0168-583X", + doi = "DOI: 10.1016/0168-583X(96)00065-1", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e", + author = "W. Wesch", +} + +@Article{morkoc94, + author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E. + Lin and B. Sverdlov and M. Burns", + collaboration = "", + title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI} + ZnSe-based semiconductor device technologies", + publisher = "AIP", + year = "1994", + journal = "Journal of Applied Physics", + volume = "76", + number = "3", + pages = "1363--1398", + keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM + NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS; + LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN + FILMS; INDUSTRY", + URL = "http://link.aip.org/link/?JAP/76/1363/1", + doi = "10.1063/1.358463", +} + +@Article{foo, + author = "Noch Unbekannt", + title = "How to find references", + journal = "Journal of Applied References", + year = "2009", + volume = "77", + pages = "1--23", +} + +@Article{tang95, + title = "Atomistic simulation of thermomechanical properties of + \beta{}-Si{C}", + author = "Meijie Tang and Sidney Yip", + journal = "Phys. Rev. B", + volume = "52", + number = "21", + pages = "15150--15159", + numpages = "9", + year = "1995", + doi = "10.1103/PhysRevB.52.15150", + notes = "modified tersoff, scale cutoff with volume, promising + tersoff reparametrization", + publisher = "American Physical Society", +} + +@Article{sarro00, + title = "Silicon carbide as a new {MEMS} technology", + journal = "Sensors and Actuators A: Physical", + volume = "82", + number = "1-3", + pages = "210--218", + year = "2000", + ISSN = "0924-4247", + doi = "DOI: 10.1016/S0924-4247(99)00335-0", + URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59", + author = "Pasqualina M. Sarro", + keywords = "MEMS", + keywords = "Silicon carbide", + keywords = "Micromachining", + keywords = "Mechanical stress", +} + +@Article{casady96, + title = "Status of silicon carbide (Si{C}) as a wide-bandgap + semiconductor for high-temperature applications: {A} + review", + journal = "Solid-State Electronics", + volume = "39", + number = "10", + pages = "1409--1422", + year = "1996", + ISSN = "0038-1101", + doi = "DOI: 10.1016/0038-1101(96)00045-7", + URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b", + author = "J. B. Casady and R. W. Johnson", +} + +@Article{giancarli98, + title = "Design requirements for Si{C}/Si{C} composites + structural material in fusion power reactor blankets", + journal = "Fusion Engineering and Design", + volume = "41", + number = "1-4", + pages = "165--171", + year = "1998", + ISSN = "0920-3796", + doi = "DOI: 10.1016/S0920-3796(97)00200-7", + URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be", + author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le + Marois and N. B. Morley and J. F. Salavy", +} + +@Article{pensl93, + title = "Electrical and optical characterization of Si{C}", + journal = "Physica B: Condensed Matter", + volume = "185", + number = "1-4", + pages = "264--283", + year = "1993", + ISSN = "0921-4526", + doi = "DOI: 10.1016/0921-4526(93)90249-6", + URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776", + author = "G. Pensl and W. J. Choyke", +} +@Article{tairov78, + title = "Investigation of growth processes of ingots of silicon + carbide single crystals", + journal = "Journal of Crystal Growth", + volume = "43", + number = "2", + pages = "209--212", + year = "1978", + notes = "modifief lely process", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(78)90169-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc", + author = "Yu. M. Tairov and V. F. Tsvetkov", +} + +@Article{nishino83, + author = "Shigehiro Nishino and J. 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