X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=2ca9532e2551caef337615a819a511a2f0002051;hp=372a642f5ac031151cc9bf528e44d78e8767e2e1;hb=489cd7fe0c6c2d26b1025f31ec20670867d87259;hpb=1d5283e2031c9611f494a9a98d115f32cd9898de

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 372a642..2ca9532 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1491,18 +1491,6 @@
   notes =        "sic intro, properties",
 }
 
-@Article{neudeck95,
-  author =       "P. G. Neudeck",
-  title =        "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
-                 {ELECTRONICS} {TECHNOLOGY}",
-  journal =      "Journal of Electronic Materials",
-  year =         "1995",
-  volume =       "24",
-  number =       "4",
-  pages =        "283--288",
-  month =        apr,
-}
-
 @Article{foo,
   author =       "Noch Unbekannt",
   title =        "How to find references",
@@ -1619,6 +1607,54 @@
   author =       "Yu.M. Tairov and V. F. Tsvetkov",
 }
 
+@Article{barrett91,
+  title =        "Si{C} boule growth by sublimation vapor transport",
+  journal =      "Journal of Crystal Growth",
+  volume =       "109",
+  number =       "1-4",
+  pages =        "17--23",
+  year =         "1991",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(91)90152-U",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
+  author =       "D. L. Barrett and R. G. Seidensticker and W. Gaida and
+                 R. H. Hopkins and W. J. Choyke",
+}
+
+@Article{barrett93,
+  title =        "Growth of large Si{C} single crystals",
+  journal =      "Journal of Crystal Growth",
+  volume =       "128",
+  number =       "1-4",
+  pages =        "358--362",
+  year =         "1993",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(93)90348-Z",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
+  author =       "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
+                 R. H. Hopkins and P. G. McMullin and R. C. Clarke and
+                 W. J. Choyke",
+}
+
+@Article{stein93,
+  title =        "Control of polytype formation by surface energy
+                 effects during the growth of Si{C} monocrystals by the
+                 sublimation method",
+  journal =      "Journal of Crystal Growth",
+  volume =       "131",
+  number =       "1-2",
+  pages =        "71--74",
+  year =         "1993",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(93)90397-F",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
+  author =       "R. A. Stein and P. Lanig",
+  notes =        "6h and 4h, sublimation technique",
+}
+
 @Article{nishino83,
   author =       "Shigehiro Nishino and J. Anthony Powell and Herbert A.
                  Will",
@@ -3244,5 +3280,77 @@
                  optimization",
   URL =          "http://link.aip.org/link/?JAP/53/6962/1",
   doi =          "10.1063/1.330041",
+  notes =        "blue led, sublimation process",
 }
 
+@Article{neudeck95,
+  author =       "Philip Neudeck",
+  affiliation =  "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
+                 Road 44135 Cleveland OH",
+  title =        "Progress in silicon carbide semiconductor electronics
+                 technology",
+  journal =      "Journal of Electronic Materials",
+  publisher =    "Springer Boston",
+  ISSN =         "0361-5235",
+  keyword =      "Chemistry and Materials Science",
+  pages =        "283--288",
+  volume =       "24",
+  issue =        "4",
+  URL =          "http://dx.doi.org/10.1007/BF02659688",
+  note =         "10.1007/BF02659688",
+  year =         "1995",
+  notes =        "sic data, advantages of 3c sic",
+}
+
+@Article{bhatnagar93,
+  author =       "M. Bhatnagar and B. J. Baliga",
+  journal =      "Electron Devices, IEEE Transactions on",
+  title =        "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
+                 devices",
+  year =         "1993",
+  month =        mar,
+  volume =       "40",
+  number =       "3",
+  pages =        "645--655",
+  keywords =     "3C-SiC;50 to 5000 V;6H-SiC;Schottky
+                 rectifiers;Si;SiC;breakdown voltages;drift region
+                 properties;output characteristics;power MOSFETs;power
+                 semiconductor devices;switching characteristics;thermal
+                 analysis;Schottky-barrier diodes;electric breakdown of
+                 solids;insulated gate field effect transistors;power
+                 transistors;semiconductor materials;silicon;silicon
+                 compounds;solid-state rectifiers;thermal analysis;",
+  doi =          "10.1109/16.199372",
+  ISSN =         "0018-9383",
+  notes =        "comparison 3c 6h sic and si devices",
+}
+
+@Article{neudeck94,
+  author =       "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
+                 A. Powell and C. S. Salupo and L. G. Matus",
+  journal =      "Electron Devices, IEEE Transactions on",
+  title =        "Electrical properties of epitaxial 3{C}- and
+                 6{H}-Si{C} p-n junction diodes produced side-by-side on
+                 6{H}-Si{C} substrates",
+  year =         "1994",
+  month =        may,
+  volume =       "41",
+  number =       "5",
+  pages =        "826--835",
+  keywords =     "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
+                 C;6H-SiC layers;6H-SiC substrates;CVD
+                 process;SiC;chemical vapor deposition;doping;electrical
+                 properties;epitaxial layers;light
+                 emission;low-tilt-angle 6H-SiC substrates;p-n junction
+                 diodes;polytype;rectification characteristics;reverse
+                 leakage current;reverse voltages;temperature;leakage
+                 currents;power electronics;semiconductor
+                 diodes;semiconductor epitaxial layers;semiconductor
+                 growth;semiconductor materials;silicon
+                 compounds;solid-state rectifiers;substrates;vapour
+                 phase epitaxial growth;",
+  doi =          "10.1109/16.285038",
+  ISSN =         "0018-9383",
+  notes =        "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
+                 substrate",
+}