X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=57e4e5304b57415ac90bba8080f27e76b360a7c2;hp=eb1848b9f79e3630a62dd58d671664c2e4738fcf;hb=bc2f9b6873ec7ab9437b0a942961576d063615dd;hpb=26183120b49637d9db5dc6650085dc7318ac1a6c diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index eb1848b..57e4e53 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -87,7 +87,9 @@ pages = "827--835", month = mar, year = "2003", - notes = "dual implantation, sic prec enhanced by vacancies", + notes = "dual implantation, sic prec enhanced by vacancies, + precipitation by interstitial and substitutional + carbon, both mechanisms explained + refs", } @Book{laplace, @@ -294,7 +296,7 @@ dumbbell configuration", } -@Article{gao02, +@Article{gao02a, title = "Cascade overlap and amorphization in $3{C}-Si{C}:$ Defect accumulation, topological features, and disordering", @@ -375,6 +377,28 @@ notes = "si self interstitial, diffusion, tbmd", } +@Article{johnson98, + author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la + Rubia", + collaboration = "", + title = "A kinetic Monte--Carlo study of the effective + diffusivity of the silicon self-interstitial in the + presence of carbon and boron", + publisher = "AIP", + year = "1998", + journal = "Journal of Applied Physics", + volume = "84", + number = "4", + pages = "1963--1967", + keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS; + CARBON ADDITIONS; BORON ADDITIONS; elemental + semiconductors; self-diffusion", + URL = "http://link.aip.org/link/?JAP/84/1963/1", + doi = "10.1063/1.368328", + notes = "kinetic monte carlo of si self interstitial + diffsuion", +} + @Article{bar-yam84, title = "Barrier to Migration of the Silicon Self-Interstitial", @@ -391,6 +415,39 @@ notes = "si self-interstitial migration barrier", } +@Article{bar-yam84_2, + title = "Electronic structure and total-energy migration + barriers of silicon self-interstitials", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "30", + number = "4", + pages = "1844--1852", + numpages = "8", + year = "1984", + month = aug, + doi = "10.1103/PhysRevB.30.1844", + publisher = "American Physical Society", +} + +@Article{bloechl93, + title = "First-principles calculations of self-diffusion + constants in silicon", + author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car + and D. B. Laks and W. Andreoni and S. T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "70", + number = "16", + pages = "2435--2438", + numpages = "3", + year = "1993", + month = apr, + doi = "10.1103/PhysRevLett.70.2435", + publisher = "American Physical Society", + notes = "si self int diffusion by ab initio md, formation + entropy calculations", +} + @Article{colombo02, title = "Tight-binding theory of native point defects in silicon", @@ -422,6 +479,22 @@ silicon, si self interstitials, free energy", } +@Article{goedecker02, + title = "A Fourfold Coordinated Point Defect in Silicon", + author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", + journal = "Phys. Rev. Lett.", + volume = "88", + number = "23", + pages = "235501", + numpages = "4", + year = "2002", + month = may, + doi = "10.1103/PhysRevLett.88.235501", + publisher = "American Physical Society", + notes = "first time ffcd, fourfold coordinated point defect in + silicon", +} + @Article{ma10, title = "Ab initio study of self-diffusion in silicon over a wide temperature range: Point defect states and @@ -439,6 +512,21 @@ notes = "si self interstitial diffusion + refs", } +@Article{posselt06, + title = "Atomistic simulations on the thermal stability of the + antisite pair in 3{C}- and 4{H}-Si{C}", + author = "M. Posselt and F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "73", + number = "12", + pages = "125206", + numpages = "8", + year = "2006", + month = mar, + doi = "10.1103/PhysRevB.73.125206", + publisher = "American Physical Society", +} + @Article{posselt08, title = "Correlation between self-diffusion in Si and the migration mechanisms of vacancies and @@ -474,6 +562,67 @@ notes = "defects in 3c-sic", } +@Article{gao02, + title = "Empirical potential approach for defect properties in + 3{C}-Si{C}", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "191", + number = "1-4", + pages = "504--508", + year = "2002", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(02)00600-6", + URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7", + author = "Fei Gao and William J. Weber", + keywords = "Empirical potential", + keywords = "Defect properties", + keywords = "Silicon carbide", + keywords = "Computer simulation", + notes = "sic potential, brenner type, like erhart/albe", +} + +@Article{gao04, + title = "Atomistic study of intrinsic defect migration in + 3{C}-Si{C}", + author = "Fei Gao and William J. Weber and M. Posselt and V. + Belko", + journal = "Phys. Rev. B", + volume = "69", + number = "24", + pages = "245205", + numpages = "5", + year = "2004", + month = jun, + doi = "10.1103/PhysRevB.69.245205", + publisher = "American Physical Society", + notes = "defect migration in sic", +} + +@Article{gao07, + author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and + W. J. Weber", + collaboration = "", + title = "Ab Initio atomic simulations of antisite pair recovery + in cubic silicon carbide", + publisher = "AIP", + year = "2007", + journal = "Applied Physics Letters", + volume = "90", + number = "22", + eid = "221915", + numpages = "3", + pages = "221915", + keywords = "ab initio calculations; silicon compounds; antisite + defects; wide band gap semiconductors; molecular + dynamics method; density functional theory; + electron-hole recombination; photoluminescence; + impurities; diffusion", + URL = "http://link.aip.org/link/?APL/90/221915/1", + doi = "10.1063/1.2743751", +} + @Article{mattoni2002, title = "Self-interstitial trapping by carbon complexes in crystalline silicon", @@ -526,6 +675,21 @@ dumbbell", } +@Article{capaz98, + title = "Theory of carbon-carbon pairs in silicon", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "58", + number = "15", + pages = "9845--9850", + numpages = "5", + year = "1998", + month = oct, + doi = "10.1103/PhysRevB.58.9845", + publisher = "American Physical Society", + notes = "carbon pairs in si", +} + @Article{dal_pino93, title = "Ab initio investigation of carbon-related defects in silicon", @@ -645,7 +809,7 @@ @Article{song90, title = "{EPR} identification of the single-acceptor state of interstitial carbon in silicon", - author = "G. D. Watkins L. W. Song", + author = "L. W. Song and G. D. Watkins", journal = "Phys. Rev. B", volume = "42", number = "9", @@ -769,7 +933,30 @@ keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", URL = "http://link.aip.org/link/?JAP/76/3656/1", doi = "10.1063/1.357429", - notes = "strained si-c to 3c-sic, carbon nucleation + refs", + notes = "strained si-c to 3c-sic, carbon nucleation + refs, + precipitation by substitutional carbon, coherent prec, + coherent to incoherent transition strain vs interface + energy", +} + +@Article{fischer95, + author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J. + Osten", + collaboration = "", + title = "Investigation of the high temperature behavior of + strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "77", + number = "5", + pages = "1934--1937", + keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS; + XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE + PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION; + TEMPERATURE RANGE 04001000 K", + URL = "http://link.aip.org/link/?JAP/77/1934/1", + doi = "10.1063/1.358826", } @Article{edgar92, @@ -839,6 +1026,65 @@ NETHERLANDS", } +@Article{zirkelbach09, + title = "Molecular dynamics simulation of defect formation and + precipitation in heavily carbon doped silicon", + journal = "Materials Science and Engineering: B", + volume = "159-160", + number = "", + pages = "149--152", + year = "2009", + note = "EMRS 2008 Spring Conference Symposium K: Advanced + Silicon Materials Research for Electronic and + Photovoltaic Applications", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2008.10.010", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39", + author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and + B. Stritzker", + keywords = "Silicon", + keywords = "Carbon", + keywords = "Silicon carbide", + keywords = "Nucleation", + keywords = "Defect formation", + keywords = "Molecular dynamics simulations", +} + +@Article{zirkelbach10a, + title = "Defects in Carbon implanted Silicon calculated by + classical potentials and first principles methods", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidtd and E. Rauls", +} + +@Article{zirkelbach10b, + title = "Extensive first principles study of carbon defects in + silicon", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidtd and E. Rauls", +} + +@Article{zirkelbach10c, + title = "...", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2010", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidtd and E. Rauls", +} + @Article{lindner99, title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} @@ -1081,6 +1327,19 @@ FILMS; INDUSTRY", URL = "http://link.aip.org/link/?JAP/76/1363/1", doi = "10.1063/1.358463", + notes = "sic intro, properties", +} + +@Article{neudeck95, + author = "P. G. Neudeck", + title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} + {ELECTRONICS} {TECHNOLOGY}", + journal = "Journal of Electronic Materials", + year = "1995", + volume = "24", + number = "4", + pages = "283--288", + month = apr, } @Article{foo, @@ -1138,7 +1397,7 @@ doi = "DOI: 10.1016/0038-1101(96)00045-7", URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b", author = "J. B. Casady and R. W. Johnson", - notes = "sic intro" + notes = "sic intro", } @Article{giancarli98, @@ -2012,6 +2271,44 @@ model, interface", } +@Article{chirita97, + title = "Strain relaxation and thermal stability of the + 3{C}-Si{C}(001)/Si(001) interface: {A} molecular + dynamics study", + journal = "Thin Solid Films", + volume = "294", + number = "1-2", + pages = "47--49", + year = "1997", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/S0040-6090(96)09257-7", + URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4", + author = "V. Chirita and L. Hultman and L. R. Wallenberg", + keywords = "Strain relaxation", + keywords = "Interfaces", + keywords = "Thermal stability", + keywords = "Molecular dynamics", + notes = "tersoff sic/si interface study", +} + +@Article{cicero02, + title = "Ab initio Study of Misfit Dislocations at the + $Si{C}/Si(001)$ Interface", + author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra + Catellani", + journal = "Phys. Rev. Lett.", + volume = "89", + number = "15", + pages = "156101", + numpages = "4", + year = "2002", + month = sep, + doi = "10.1103/PhysRevLett.89.156101", + publisher = "American Physical Society", + notes = "sic/si interface study", +} + @Article{pizzagalli03, title = "Theoretical investigations of a highly mismatched interface: Si{C}/Si(001)", @@ -2081,8 +2378,8 @@ precipitation; semiconductor doping", URL = "http://link.aip.org/link/?JAP/86/4184/1", doi = "10.1063/1.371344", - notes = "sic conversion by ibs, detected substitutional - carbon", + notes = "sic conversion by ibs, detected substitutional carbon, + expansion of si lattice", } @Article{eichhorn02, @@ -2152,6 +2449,22 @@ notes = "tersoff stringent test", } +@Article{mazzarolo01, + title = "Low-energy recoils in crystalline silicon: Quantum + simulations", + author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio + Lulli and Eros Albertazzi", + journal = "Phys. Rev. B", + volume = "63", + number = "19", + pages = "195207", + numpages = "4", + year = "2001", + month = apr, + doi = "10.1103/PhysRevB.63.195207", + publisher = "American Physical Society", +} + @Article{holmstroem08, title = "Threshold defect production in silicon determined by density functional theory molecular dynamics @@ -2378,7 +2691,7 @@ annealing", URL = "http://link.aip.org/link/?JAP/84/4631/1", doi = "10.1063/1.368703", - notes = "coherent 3C-SiC, topotactic", + notes = "coherent 3C-SiC, topotactic, critical coherence size", } @Article{jones04, @@ -2428,7 +2741,7 @@ doi = "10.1103/PhysRevB.55.2188", publisher = "American Physical Society", notes = "ab initio c in si and di-carbon defect, no formation - energies", + energies, different migration barriers and paths", } @Article{burnard93, @@ -2487,3 +2800,88 @@ notes = "constrained conjugate gradient relaxation technique (crt)", } + +@Article{gali03, + title = "Correlation between the antisite pair and the ${DI}$ + center in Si{C}", + author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and + I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and + W. J. Choyke", + journal = "Phys. Rev. B", + volume = "67", + number = "15", + pages = "155203", + numpages = "5", + year = "2003", + month = apr, + doi = "10.1103/PhysRevB.67.155203", + publisher = "American Physical Society", +} + +@Article{chen98, + title = "Production and recovery of defects in Si{C} after + irradiation and deformation", + journal = "Journal of Nuclear Materials", + volume = "258-263", + number = "Part 2", + pages = "1803--1808", + year = "1998", + note = "", + ISSN = "0022-3115", + doi = "DOI: 10.1016/S0022-3115(98)00139-1", + URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b", + author = "J. Chen and P. Jung and H. Klein", +} + +@Article{weber01, + title = "Accumulation, dynamic annealing and thermal recovery + of ion-beam-induced disorder in silicon carbide", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "175-177", + number = "", + pages = "26--30", + year = "2001", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(00)00542-5", + URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577", + author = "W. J. Weber and W. Jiang and S. Thevuthasan", + keywords = "Amorphization", + keywords = "Irradiation effects", + keywords = "Thermal recovery", + keywords = "Silicon carbide", +} + +@Article{bockstedte03, + title = "Ab initio study of the migration of intrinsic defects + in $3{C}-Si{C}$", + author = "Michel Bockstedte and Alexander Mattausch and Oleg + Pankratov", + journal = "Phys. Rev. B", + volume = "68", + number = "20", + pages = "205201", + numpages = "17", + year = "2003", + month = nov, + doi = "10.1103/PhysRevB.68.205201", + publisher = "American Physical Society", + notes = "defect migration in sic", +} + +@Article{rauls03a, + title = "Theoretical study of vacancy diffusion and + vacancy-assisted clustering of antisites in Si{C}", + author = "E. Rauls and Th. Frauenheim and A. Gali and P. + De\'ak", + journal = "Phys. Rev. B", + volume = "68", + number = "15", + pages = "155208", + numpages = "9", + year = "2003", + month = oct, + doi = "10.1103/PhysRevB.68.155208", + publisher = "American Physical Society", +}