X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=671b85c510605b6ed6dafc91f2edf0c30e2508ca;hp=74bed2443c93fb68af2c058f16c20ddb31fa3d3c;hb=f09a21f8de5cb74fd56a0d083140bb8ca626afba;hpb=a7430237905bcb07c85d5ef0a2bac0d51210952a diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 74bed24..671b85c 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -2,6 +2,37 @@ % bibliography database % +@Article{schroedinger26, + author = "E. Schrödinger", + title = "Quantisierung als Eigenwertproblem", + journal = "Ann. Phys. (Leipzig)", + volume = "384", + number = "4", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19263840404", + doi = "10.1002/andp.19263840404", + pages = "361--376", + year = "1926", +} + +@Article{bloch29, + author = "Felix Bloch", + affiliation = "Institut d. Universität f. theor. Physik Leipzig", + title = "Über die Quantenmechanik der Elektronen in + Kristallgittern", + journal = "Z. Phys.", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0939-7922", + keyword = "Physics and Astronomy", + pages = "555--600", + volume = "52", + issue = "7", + URL = "http://dx.doi.org/10.1007/BF01339455", + note = "10.1007/BF01339455", + year = "1929", +} + @Article{albe_sic_pot, author = "Paul Erhart and Karsten Albe", title = "Analytical potential for atomistic simulations of @@ -24,6 +55,21 @@ doi = "10.1103/PhysRevB.71.035211", } +@Article{erhart04, + title = "The role of thermostats in modeling vapor phase + condensation of silicon nanoparticles", + journal = "Appl. Surf. Sci.", + volume = "226", + number = "1-3", + pages = "12--18", + year = "2004", + note = "EMRS 2003 Symposium F, Nanostructures from Clusters", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2003.11.003", + URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738", + author = "Paul Erhart and Karsten Albe", +} + @Article{albe2002, title = "Modeling the metal-semiconductor interaction: Analytical bond-order potential for platinum-carbon", @@ -40,9 +86,40 @@ notes = "derivation of albe bond order formalism", } +@Article{newman65, + title = "Vibrational absorption of carbon in silicon", + journal = "J. Phys. Chem. Solids", + volume = "26", + number = "2", + pages = "373--379", + year = "1965", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(65)90166-6", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667", + author = "R. C. Newman and J. B. Willis", + notes = "c impurity dissolved as substitutional c in si", +} + +@Article{baker68, + author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C. + Buschert", + collaboration = "", + title = "Effect of Carbon on the Lattice Parameter of Silicon", + publisher = "AIP", + year = "1968", + journal = "J. Appl. Phys.", + volume = "39", + number = "9", + pages = "4365--4368", + URL = "http://link.aip.org/link/?JAP/39/4365/1", + doi = "10.1063/1.1656977", + notes = "lattice contraction due to subst c", +} + @Article{bean71, title = "The solubility of carbon in pulled silicon crystals", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "32", number = "6", pages = "1211--1219", @@ -56,6 +133,17 @@ } @Article{capano97, + author = "M. A. Capano and R. J. Trew", + title = "Silicon carbide electronic materials and devices", + journal = "MRS Bull.", + year = "1997", + volume = "22", + number = "3", + pages = "19--22", + publisher = "MATERIALS RESEARCH SOCIETY", +} + +@Article{capano97_old, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", journal = "MRS Bull.", @@ -68,7 +156,7 @@ author = "G. R. Fisher and P. Barnes", title = "Towards a unified view of polytypism in silicon carbide", - journal = "Philosophical Magazine Part B", + journal = "Philos. Mag. B", volume = "61", pages = "217--236", year = "1990", @@ -82,16 +170,33 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A", volume = "76", pages = "827--835", month = mar, year = "2003", + URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/", notes = "dual implantation, sic prec enhanced by vacancies, precipitation by interstitial and substitutional carbon, both mechanisms explained + refs", } +@Article{skorupa96, + title = "Carbon-mediated effects in silicon and in + silicon-related materials", + journal = "Mater. Chem. Phys.", + volume = "44", + number = "2", + pages = "101--143", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/0254-0584(95)01673-I", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982", + author = "W. Skorupa and R. A. Yankov", + notes = "review of silicon carbon compound", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -166,11 +271,41 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{nielsen83, + title = "First-Principles Calculation of Stress", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. Lett.", + volume = "50", + number = "9", + pages = "697--700", + numpages = "3", + year = "1983", + month = feb, + doi = "10.1103/PhysRevLett.50.697", + publisher = "American Physical Society", + notes = "generalization of virial theorem", +} + +@Article{nielsen85, + title = "Quantum-mechanical theory of stress and force", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. B", + volume = "32", + number = "6", + pages = "3780--3791", + numpages = "11", + year = "1985", + month = sep, + doi = "10.1103/PhysRevB.32.3780", + publisher = "American Physical Society", + notes = "dft virial stress and forces", +} + @Article{moissan04, author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon Diablo", - journal = "Comptes rendus de l'Académie des Sciences", + journal = "C. R. Acad. Sci.", volume = "139", pages = "773--786", year = "1904", @@ -188,7 +323,7 @@ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and Calvin H. Carter Jr. and D. Asbury", title = "Si{C} Seeded Boule Growth", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "3--8", year = "1998", @@ -218,7 +353,7 @@ title = "Molecular dynamics with coupling to an external bath", publisher = "AIP", year = "1984", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "81", number = "8", pages = "3684--3690", @@ -235,8 +370,7 @@ title = "Molecular dynamics determination of defect energetics in beta -Si{C} using three representative empirical potentials", - journal = "Modelling and Simulation in Materials Science and - Engineering", + journal = "Modell. Simul. Mater. Sci. Eng.", volume = "3", number = "5", pages = "615--627", @@ -318,8 +452,7 @@ @Article{devanathan98, title = "Computer simulation of a 10 ke{V} Si displacement cascade in Si{C}", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "141", number = "1-4", pages = "118--122", @@ -334,7 +467,7 @@ @Article{devanathan98_2, title = "Displacement threshold energies in [beta]-Si{C}", - journal = "Journal of Nuclear Materials", + journal = "J. Nucl. Mater.", volume = "253", number = "1-3", pages = "47--52", @@ -386,7 +519,7 @@ presence of carbon and boron", publisher = "AIP", year = "1998", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "84", number = "4", pages = "1963--1967", @@ -448,6 +581,22 @@ entropy calculations", } +@Article{munro99, + title = "Defect migration in crystalline silicon", + author = "Lindsey J. Munro and David J. Wales", + journal = "Phys. Rev. B", + volume = "59", + number = "6", + pages = "3969--3980", + numpages = "11", + year = "1999", + month = feb, + doi = "10.1103/PhysRevB.59.3969", + publisher = "American Physical Society", + notes = "eigenvector following method, vacancy and interstiial + defect migration mechanisms", +} + @Article{colombo02, title = "Tight-binding theory of native point defects in silicon", @@ -479,6 +628,23 @@ silicon, si self interstitials, free energy", } +@Article{mattsson08, + title = "Electronic surface error in the Si interstitial + formation energy", + author = "Ann E. Mattsson and Ryan R. Wixom and Rickard + Armiento", + journal = "Phys. Rev. B", + volume = "77", + number = "15", + pages = "155211", + numpages = "7", + year = "2008", + month = apr, + doi = "10.1103/PhysRevB.77.155211", + publisher = "American Physical Society", + notes = "si self interstitial formation energies by dft", +} + @Article{goedecker02, title = "A Fourfold Coordinated Point Defect in Silicon", author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", @@ -495,6 +661,41 @@ silicon", } +@Article{sahli05, + title = "Ab initio molecular dynamics simulation of + self-interstitial diffusion in silicon", + author = "Beat Sahli and Wolfgang Fichtner", + journal = "Phys. Rev. B", + volume = "72", + number = "24", + pages = "245210", + numpages = "6", + year = "2005", + month = dec, + doi = "10.1103/PhysRevB.72.245210", + publisher = "American Physical Society", + notes = "si self int, diffusion, barrier height, voronoi + mapping applied", +} + +@Article{hobler05, + title = "Ab initio calculations of the interaction between + native point defects in silicon", + journal = "Mater. Sci. Eng., B", + volume = "124-125", + number = "", + pages = "368--371", + year = "2005", + note = "EMRS 2005, Symposium D - Materials Science and Device + Issues for Future Technologies", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2005.08.072", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4", + author = "G. Hobler and G. Kresse", + notes = "vasp intrinsic si defect interaction study, capture + radius", +} + @Article{ma10, title = "Ab initio study of self-diffusion in silicon over a wide temperature range: Point defect states and @@ -565,11 +766,10 @@ @Article{gao02, title = "Empirical potential approach for defect properties in 3{C}-Si{C}", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "191", number = "1-4", - pages = "504--508", + pages = "487--496", year = "2002", note = "", ISSN = "0168-583X", @@ -608,7 +808,7 @@ in cubic silicon carbide", publisher = "AIP", year = "2007", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "90", number = "22", eid = "221915", @@ -687,7 +887,44 @@ month = oct, doi = "10.1103/PhysRevB.58.9845", publisher = "American Physical Society", - notes = "carbon pairs in si", + notes = "c_i c_s pair configuration, theoretical results", +} + +@Article{song90_2, + title = "Bistable interstitial-carbon--substitutional-carbon + pair in silicon", + author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D. + Watkins", + journal = "Phys. Rev. B", + volume = "42", + number = "9", + pages = "5765--5783", + numpages = "18", + year = "1990", + month = sep, + doi = "10.1103/PhysRevB.42.5765", + publisher = "American Physical Society", + notes = "c_i c_s pair configuration, experimental results", +} + +@Article{liu02, + author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and + Shifeng Lu and Xiang-Yang Liu", + collaboration = "", + title = "Ab initio modeling and experimental study of {C}--{B} + interactions in Si", + publisher = "AIP", + year = "2002", + journal = "Appl. Phys. Lett.", + volume = "80", + number = "1", + pages = "52--54", + keywords = "silicon; boron; carbon; elemental semiconductors; + impurity-defect interactions; ab initio calculations; + secondary ion mass spectra; diffusion; interstitials", + URL = "http://link.aip.org/link/?APL/80/52/1", + doi = "10.1063/1.1430505", + notes = "c-c 100 split, lower as a and b states of capaz", } @Article{dal_pino93, @@ -777,7 +1014,7 @@ @Article{bean70, title = "Low temperature electron irradiation of silicon containing carbon", - journal = "Solid State Communications", + journal = "Solid State Commun.", volume = "8", number = "3", pages = "175--177", @@ -789,6 +1026,24 @@ author = "A. R. Bean and R. C. Newman", } +@Article{durand99, + author = "F. Durand and J. Duby", + affiliation = "EPM-Madylam, CNRS and INP Grenoble, France", + title = "Carbon solubility in solid and liquid silicon—{A} + review with reference to eutectic equilibrium", + journal = "Journal of Phase Equilibria", + publisher = "Springer New York", + ISSN = "1054-9714", + keyword = "Chemistry and Materials Science", + pages = "61--63", + volume = "20", + issue = "1", + URL = "http://dx.doi.org/10.1361/105497199770335956", + note = "10.1361/105497199770335956", + year = "1999", + notes = "better c solubility limit in silicon", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -826,7 +1081,7 @@ author = "A K Tipping and R C Newman", title = "The diffusion coefficient of interstitial carbon in silicon", - journal = "Semiconductor Science and Technology", + journal = "Semicond. Sci. Technol.", volume = "2", number = "5", pages = "315--317", @@ -836,6 +1091,26 @@ silicon", } +@Article{isomae93, + author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and + Masao Tamura", + collaboration = "", + title = "Annealing behavior of Me{V} implanted carbon in + silicon", + publisher = "AIP", + year = "1993", + journal = "J. Appl. Phys.", + volume = "74", + number = "6", + pages = "3815--3820", + keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV + RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH + PROFILES", + URL = "http://link.aip.org/link/?JAP/74/3815/1", + doi = "10.1063/1.354474", + notes = "c at interstitial location for rt implantation in si", +} + @Article{strane96, title = "Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy", @@ -852,7 +1127,7 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - journal = "Materials Science and Engineering B", + journal = "Mater. Sci. Eng., B", volume = "89", number = "1-3", pages = "241--245", @@ -866,6 +1141,39 @@ stress, avoid sic precipitation", } +@Article{foell77, + title = "The formation of swirl defects in silicon by + agglomeration of self-interstitials", + journal = "J. Cryst. Growth", + volume = "40", + number = "1", + pages = "90--108", + year = "1977", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(77)90034-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "b-swirl: si + c interstitial agglomerates, c-si + agglomerate", +} + +@Article{foell81, + title = "Microdefects in silicon and their relation to point + defects", + journal = "J. Cryst. Growth", + volume = "52", + number = "Part 2", + pages = "907--916", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90397-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "swirl review", +} + @Article{werner97, author = "P. Werner and S. Eichler and G. Mariani and R. K{\"{o}}gler and W. Skorupa", @@ -873,7 +1181,7 @@ silicon by transmission electron microscopy", publisher = "AIP", year = "1997", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "70", number = "2", pages = "252--254", @@ -890,8 +1198,8 @@ @InProceedings{werner96, author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. Eichler", - booktitle = "Ion Implantation Technology. Proceedings of the 11th - International Conference on", + booktitle = "Proceedings of the 11th International Conference on + Ion Implantation Technology.", title = "{TEM} investigation of {C}-Si defects in carbon implanted silicon", year = "1996", @@ -899,25 +1207,111 @@ volume = "", number = "", pages = "675--678", - keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C - atom/radiation induced defect interaction;C depth - distribution;C precipitation;C-Si defects;C-Si - dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high - energy ion implantation;ion implantation;metastable - agglomerates;microdefects;positron annihilation - spectroscopy;rapid thermal annealing;secondary ion mass - spectrometry;vacancy clusters;buried - layers;carbon;elemental semiconductors;impurity-defect - interactions;ion implantation;positron - annihilation;precipitation;rapid thermal - annealing;secondary ion mass - spectra;silicon;transmission electron - microscopy;vacancies (crystal);", doi = "10.1109/IIT.1996.586497", ISSN = "", notes = "c-si agglomerates dumbbells", } +@Article{werner98, + author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and + D. C. Jacobson", + collaboration = "", + title = "Carbon diffusion in silicon", + publisher = "AIP", + year = "1998", + journal = "Appl. Phys. Lett.", + volume = "73", + number = "17", + pages = "2465--2467", + keywords = "silicon; carbon; elemental semiconductors; diffusion; + secondary ion mass spectra; semiconductor epitaxial + layers; annealing; impurity-defect interactions; + impurity distribution", + URL = "http://link.aip.org/link/?APL/73/2465/1", + doi = "10.1063/1.122483", + notes = "c diffusion in si, kick out mechnism", +} + +@Article{kalejs84, + author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele", + collaboration = "", + title = "Self-interstitial enhanced carbon diffusion in + silicon", + publisher = "AIP", + year = "1984", + journal = "Appl. Phys. Lett.", + volume = "45", + number = "3", + pages = "268--269", + keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS; + CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH + TEMPERATURE; IMPURITIES", + URL = "http://link.aip.org/link/?APL/45/268/1", + doi = "10.1063/1.95167", + notes = "c diffusion due to si self-interstitials", +} + +@Article{fukami90, + author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano + and Cary Y. Yang", + collaboration = "", + title = "Characterization of SiGe/Si heterostructures formed by + Ge[sup + ] and {C}[sup + ] implantation", + publisher = "AIP", + year = "1990", + journal = "Appl. Phys. Lett.", + volume = "57", + number = "22", + pages = "2345--2347", + keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES; + FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM + SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE + EPITAXY; CARBON IONS; GERMANIUM IONS", + URL = "http://link.aip.org/link/?APL/57/2345/1", + doi = "10.1063/1.103888", +} + +@Article{strane93, + author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L. + Doyle and S. T. Picraux and J. W. Mayer", + collaboration = "", + title = "Metastable SiGe{C} formation by solid phase epitaxy", + publisher = "AIP", + year = "1993", + journal = "Appl. Phys. Lett.", + volume = "63", + number = "20", + pages = "2786--2788", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY + SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES; + ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD + SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE + EPITAXY; AMORPHIZATION", + URL = "http://link.aip.org/link/?APL/63/2786/1", + doi = "10.1063/1.110334", +} + +@Article{goorsky92, + author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F. + Legoues and J. Angilello and F. Cardone", + collaboration = "", + title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si + strained layer superlattices", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "22", + pages = "2758--2760", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; + CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS + RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; + DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS", + URL = "http://link.aip.org/link/?APL/60/2758/1", + doi = "10.1063/1.106868", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -926,7 +1320,7 @@ y]{C}[sub y]/Si heterostructures", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "6", pages = "3656--3668", @@ -947,7 +1341,7 @@ strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "77", number = "5", pages = "1934--1937", @@ -988,6 +1382,24 @@ doi = "doi:10.1016/j.nimb.2006.12.118", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Periodically arranged, selforganised, nanometric, + amorphous precipitates have been observed after + high-fluence ion implantations into solids for a number + of ion/target combinations at certain implantation + conditions. A model describing the ordering process + based on compressive stress exerted by the amorphous + inclusions as a result of the density change upon + amorphisation is introduced. A Monte Carlo simulation + code, which focuses on high-fluence carbon + implantations into silicon, is able to reproduce + experimentally observed nanolamella distributions as + well as the formation of continuous amorphous layers. + By means of simulation, the selforganisation process + becomes traceable and detailed information about the + compositional and structural state during the ordering + process is obtained. Based on simulation results, a + recipe is proposed for producing broad distributions of + ordered lamellar structures.", } @Article{zirkelbach2006, @@ -1006,6 +1418,17 @@ doi = "doi:10.1016/j.nimb.2005.08.162", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "High-dose ion implantation of materials that undergo + drastic density change upon amorphization at certain + implantation conditions results in periodically + arranged, self-organized, nanometric configurations of + the amorphous phase. A simple model explaining the + phenomenon is introduced and implemented in a + Monte-Carlo simulation code. Through simulation + conditions for observing lamellar precipitates are + specified and additional information about the + compositional and structural state during the ordering + process is gained.", } @Article{zirkelbach2005, @@ -1024,12 +1447,27 @@ doi = "doi:10.1016/j.commatsci.2004.12.016", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Ion irradiation of materials, which undergo a drastic + density change upon amorphization have been shown to + exhibit selforganized, nanometric structures of the + amorphous phase in the crystalline host lattice. In + order to better understand the process a + Monte-Carlo-simulation code based on a simple model is + developed. In the present work we focus on high-dose + carbon implantations into silicon. The simulation is + able to reproduce results gained by cross-sectional TEM + measurements of high-dose carbon implanted silicon. + Necessary conditions can be specified for the + self-organization process and information is gained + about the compositional and structural state during the + ordering process which is difficult to be obtained by + experiment.", } @Article{zirkelbach09, title = "Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon", - journal = "Materials Science and Engineering: B", + journal = "Mater. Sci. Eng., B", volume = "159-160", number = "", pages = "149--152", @@ -1048,49 +1486,184 @@ keywords = "Nucleation", keywords = "Defect formation", keywords = "Molecular dynamics simulations", -} - -@Article{zirkelbach10a, - title = "Defects in Carbon implanted Silicon calculated by - classical potentials and first principles methods", - journal = "to be published", - volume = "", - number = "", - pages = "", + abstract = "The precipitation process of silicon carbide in + heavily carbon doped silicon is not yet fully + understood. High resolution transmission electron + microscopy observations suggest that in a first step + carbon atoms form C-Si dumbbells on regular Si lattice + sites which agglomerate into large clusters. In a + second step, when the cluster size reaches a radius of + a few nm, the high interfacial energy due to the SiC/Si + lattice misfit of almost 20\% is overcome and the + precipitation occurs. By simulation, details of the + precipitation process can be obtained on the atomic + level. A recently proposed parametrization of a + Tersoff-like bond order potential is used to model the + system appropriately. Preliminary results gained by + molecular dynamics simulations using this potential are + presented.", +} + +@Article{zirkelbach10, + title = "Defects in carbon implanted silicon calculated by + classical potentials and first-principles methods", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", + journal = "Phys. Rev. B", + volume = "82", + number = "9", + pages = "094110", + numpages = "6", year = "2010", + month = sep, + doi = "10.1103/PhysRevB.82.094110", + publisher = "American Physical Society", + abstract = "A comparative theoretical investigation of carbon + interstitials in silicon is presented. Calculations + using classical potentials are compared to + first-principles density-functional theory calculations + of the geometries, formation, and activation energies + of the carbon dumbbell interstitial, showing the + importance of a quantum-mechanical description of this + system. In contrast to previous studies, the present + first-principles calculations of the interstitial + carbon migration path yield an activation energy that + excellently matches the experiment. The bond-centered + interstitial configuration shows a net magnetization of + two electrons, illustrating the need for spin-polarized + calculations.", +} + +@Article{zirkelbach11, + journal = "Phys. Rev. B", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126", + publisher = "American Physical Society", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. - K. N. Lindner and W. G. Schmidtd and E. Rauls", -} - -@Article{zirkelbach10b, - title = "Extensive first principles study of carbon defects in + K. N. Lindner and W. G. Schmidt and E. Rauls", + title = "Combined \textit{ab initio} and classical potential + simulation study on silicon carbide precipitation in silicon", - journal = "to be published", - volume = "", + year = "2011", + pages = "064126", + numpages = "18", + volume = "84", + doi = "10.1103/PhysRevB.84.064126", + issue = "6", + abstract = "Atomistic simulations on the silicon carbide + precipitation in bulk silicon employing both, classical + potential and first-principles methods are presented. + The calculations aim at a comprehensive, microscopic + understanding of the precipitation mechanism in the + context of controversial discussions in the literature. + For the quantum-mechanical treatment, basic processes + assumed in the precipitation process are calculated in + feasible systems of small size. The migration mechanism + of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1 + 1 0> self-interstitial in otherwise defect-free silicon + are investigated using density functional theory + calculations. The influence of a nearby vacancy, + another carbon interstitial and a substitutional defect + as well as a silicon self-interstitial has been + investigated systematically. Interactions of various + combinations of defects have been characterized + including a couple of selected migration pathways + within these configurations. Almost all of the + investigated pairs of defects tend to agglomerate + allowing for a reduction in strain. The formation of + structures involving strong carbon-carbon bonds turns + out to be very unlikely. In contrast, substitutional + carbon occurs in all probability. A long range capture + radius has been observed for pairs of interstitial + carbon as well as interstitial carbon and vacancies. A + rather small capture radius is predicted for + substitutional carbon and silicon self-interstitials. + Initial assumptions regarding the precipitation + mechanism of silicon carbide in bulk silicon are + established and conformability to experimental findings + is discussed. Furthermore, results of the accurate + first-principles calculations on defects and carbon + diffusion in silicon are compared to results of + classical potential simulations revealing significant + limitations of the latter method. An approach to work + around this problem is proposed. Finally, results of + the classical potential molecular dynamics simulations + of large systems are examined, which reinforce previous + assumptions and give further insight into basic + processes involved in the silicon carbide transition.", +} + +@Article{lindner95, + author = "J. K. N. Lindner and A. Frohnwieser and B. + Rauschenbach and B. Stritzker", + title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} + Layers in Silicon", + journal = "MRS Proc.", + volume = "354", number = "", - pages = "", - year = "2010", - author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. - K. N. Lindner and W. G. Schmidtd and E. Rauls", + pages = "171", + year = "1994", + doi = "10.1557/PROC-354-171", + URL = "http://dx.doi.org/10.1557/PROC-354-171", + notes = "first time ibs at moderate temperatures", } -@Article{zirkelbach10c, - title = "...", - journal = "to be published", - volume = "", - number = "", - pages = "", - year = "2010", - author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. - K. N. Lindner and W. G. Schmidtd and E. Rauls", +@Article{lindner96, + title = "Formation of buried epitaxial silicon carbide layers + in silicon by ion beam synthesis", + journal = "Mater. Chem. Phys.", + volume = "46", + number = "2-3", + pages = "147--155", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/S0254-0584(97)80008-9", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7", + author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B. + Götz and A. Frohnwieser and B. Rauschenbach and B. + Stritzker", + notes = "dose window", +} + +@Article{calcagno96, + title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by + ion implantation", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "120", + number = "1-4", + pages = "121--124", + year = "1996", + note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on + New Trends in Ion Beam Processing of Materials", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(96)00492-2", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d", + author = "L. Calcagno and G. Compagnini and G. Foti and M. G. + Grimaldi and P. Musumeci", + notes = "dose window, graphitic bonds", +} + +@Article{lindner98, + title = "Mechanisms of Si{C} Formation in the Ion Beam + Synthesis of 3{C}-Si{C} Layers in Silicon", + journal = "Mater. Sci. Forum", + volume = "264-268", + pages = "215--218", + year = "1998", + note = "", + doi = "10.4028/www.scientific.net/MSF.264-268.215", + URL = "http://www.scientific.net/MSF.264-268.215", + author = "J. K. N. Lindner and W. Reiber and B. Stritzker", + notes = "intermediate temperature for sharp interface + good + crystallinity", } @Article{lindner99, title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "147", number = "1-4", pages = "249--255", @@ -1106,8 +1679,7 @@ @Article{lindner99_2, title = "Mechanisms in the ion beam synthesis of Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "148", number = "1-4", pages = "528--533", @@ -1122,8 +1694,7 @@ @Article{lindner01, title = "Ion beam synthesis of buried Si{C} layers in silicon: Basic physical processes", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "178", number = "1-4", pages = "44--54", @@ -1151,7 +1722,7 @@ title = "On the balance between ion beam induced nanoparticle formation and displacive precipitate resolution in the {C}-Si system", - journal = "Materials Science and Engineering: C", + journal = "Mater. Sci. Eng., C", volume = "26", number = "5-7", pages = "857--861", @@ -1161,16 +1732,32 @@ ISSN = "0928-4931", doi = "DOI: 10.1016/j.msec.2005.09.099", URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a", - author = "J. K. N. Lindner and M. Häberlen and G. Thorwarth and - B. Stritzker", + author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth + and B. Stritzker", notes = "c int diffusion barrier", } +@Article{haeberlen10, + title = "Structural characterization of cubic and hexagonal + Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si", + journal = "Journal of Crystal Growth", + volume = "312", + number = "6", + pages = "762--769", + year = "2010", + note = "", + ISSN = "0022-0248", + doi = "10.1016/j.jcrysgro.2009.12.048", + URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452", + author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J. + K. N. Lindner and B. Stritzker", +} + @Article{ito04, title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial growth", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "238", number = "1-4", pages = "159--164", @@ -1181,15 +1768,66 @@ URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c", author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase and S. Nishio and K. Yasuda and Y. Ishigami", + notes = "gan on 3c-sic, focus on ibs of 3c-sic", +} + +@Article{yamamoto04, + title = "Organometallic vapor phase epitaxial growth of Ga{N} + on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion + implantation into Si(1 1 1) substrate", + journal = "J. Cryst. Growth", + volume = "261", + number = "2-3", + pages = "266--270", + year = "2004", + note = "Proceedings of the 11th Biennial (US) Workshop on + Organometallic Vapor Phase Epitaxy (OMVPE)", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2003.11.041", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166", + author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M. + Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito", notes = "gan on 3c-sic", } +@Article{liu_l02, + title = "Substrates for gallium nitride epitaxy", + journal = "Mater. Sci. Eng., R", + volume = "37", + number = "3", + pages = "61--127", + year = "2002", + note = "", + ISSN = "0927-796X", + doi = "DOI: 10.1016/S0927-796X(02)00008-6", + URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401", + author = "L. Liu and J. H. Edgar", + notes = "gan substrates", +} + +@Article{takeuchi91, + title = "Growth of single crystalline Ga{N} film on Si + substrate using 3{C}-Si{C} as an intermediate layer", + journal = "J. Cryst. Growth", + volume = "115", + number = "1-4", + pages = "634--638", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90817-O", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140", + author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa + Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki", + notes = "gan on 3c-sic (first time?)", +} + @Article{alder57, author = "B. J. Alder and T. E. Wainwright", title = "Phase Transition for a Hard Sphere System", publisher = "AIP", year = "1957", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "27", number = "5", pages = "1208--1209", @@ -1202,7 +1840,7 @@ title = "Studies in Molecular Dynamics. {I}. General Method", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "31", number = "2", pages = "459--466", @@ -1210,6 +1848,36 @@ doi = "10.1063/1.1730376", } +@Article{horsfield96, + title = "Bond-order potentials: Theory and implementation", + author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and + D. G. Pettifor and M. Aoki", + journal = "Phys. Rev. B", + volume = "53", + number = "19", + pages = "12694--12712", + numpages = "18", + year = "1996", + month = may, + doi = "10.1103/PhysRevB.53.12694", + publisher = "American Physical Society", +} + +@Article{abell85, + title = "Empirical chemical pseudopotential theory of molecular + and metallic bonding", + author = "G. C. Abell", + journal = "Phys. Rev. B", + volume = "31", + number = "10", + pages = "6184--6196", + numpages = "12", + year = "1985", + month = may, + doi = "10.1103/PhysRevB.31.6184", + publisher = "American Physical Society", +} + @Article{tersoff_si1, title = "New empirical model for the structural properties of silicon", @@ -1225,6 +1893,21 @@ publisher = "American Physical Society", } +@Article{dodson87, + title = "Development of a many-body Tersoff-type potential for + silicon", + author = "Brian W. Dodson", + journal = "Phys. Rev. B", + volume = "35", + number = "6", + pages = "2795--2798", + numpages = "3", + year = "1987", + month = feb, + doi = "10.1103/PhysRevB.35.2795", + publisher = "American Physical Society", +} + @Article{tersoff_si2, title = "New empirical approach for the structure and energy of covalent systems", @@ -1315,8 +1998,7 @@ @Article{wesch96, title = "Silicon carbide: synthesis and processing", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "116", number = "1-4", pages = "305--321", @@ -1328,6 +2010,33 @@ author = "W. Wesch", } +@Article{davis91, + author = "R. F. Davis and G. Kelner and M. Shur and J. W. + Palmour and J. A. Edmond", + journal = "Proc. IEEE", + title = "Thin film deposition and microelectronic and + optoelectronic device fabrication and characterization + in monocrystalline alpha and beta silicon carbide", + year = "1991", + month = may, + volume = "79", + number = "5", + pages = "677--701", + keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky + diode;SiC;dry etching;electrical + contacts;etching;impurity incorporation;optoelectronic + device fabrication;solid-state devices;surface + chemistry;Schottky effect;Schottky gate field effect + transistors;Schottky-barrier + diodes;etching;heterojunction bipolar + transistors;insulated gate field effect + transistors;light emitting diodes;semiconductor + materials;semiconductor thin films;silicon compounds;", + doi = "10.1109/5.90132", + ISSN = "0018-9219", + notes = "sic growth methods", +} + @Article{morkoc94, author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E. Lin and B. Sverdlov and M. Burns", @@ -1336,7 +2045,7 @@ ZnSe-based semiconductor device technologies", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "3", pages = "1363--1398", @@ -1349,18 +2058,6 @@ notes = "sic intro, properties", } -@Article{neudeck95, - author = "P. G. Neudeck", - title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} - {ELECTRONICS} {TECHNOLOGY}", - journal = "Journal of Electronic Materials", - year = "1995", - volume = "24", - number = "4", - pages = "283--288", - month = apr, -} - @Article{foo, author = "Noch Unbekannt", title = "How to find references", @@ -1388,7 +2085,7 @@ @Article{sarro00, title = "Silicon carbide as a new {MEMS} technology", - journal = "Sensors and Actuators A: Physical", + journal = "Seonsor. Actuator. A", volume = "82", number = "1-3", pages = "210--218", @@ -1407,7 +2104,7 @@ title = "Status of silicon carbide (Si{C}) as a wide-bandgap semiconductor for high-temperature applications: {A} review", - journal = "Solid-State Electronics", + journal = "Solid-State Electron.", volume = "39", number = "10", pages = "1409--1422", @@ -1422,7 +2119,7 @@ @Article{giancarli98, title = "Design requirements for Si{C}/Si{C} composites structural material in fusion power reactor blankets", - journal = "Fusion Engineering and Design", + journal = "Fusion Eng. Des.", volume = "41", number = "1-4", pages = "165--171", @@ -1436,7 +2133,7 @@ @Article{pensl93, title = "Electrical and optical characterization of Si{C}", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "185", number = "1-4", pages = "264--283", @@ -1450,7 +2147,7 @@ @Article{tairov78, title = "Investigation of growth processes of ingots of silicon carbide single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "43", number = "2", pages = "209--212", @@ -1462,6 +2159,69 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{tairov81, + title = "General principles of growing large-size single + crystals of various silicon carbide polytypes", + journal = "J. Cryst. Growth", + volume = "52", + number = "Part 1", + pages = "146--150", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90184-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529", + author = "Yu.M. Tairov and V. F. Tsvetkov", +} + +@Article{barrett91, + title = "Si{C} boule growth by sublimation vapor transport", + journal = "J. Cryst. Growth", + volume = "109", + number = "1-4", + pages = "17--23", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90152-U", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1", + author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and + R. H. Hopkins and W. J. Choyke", +} + +@Article{barrett93, + title = "Growth of large Si{C} single crystals", + journal = "J. Cryst. Growth", + volume = "128", + number = "1-4", + pages = "358--362", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90348-Z", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c", + author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and + R. H. Hopkins and P. G. McMullin and R. C. Clarke and + W. J. Choyke", +} + +@Article{stein93, + title = "Control of polytype formation by surface energy + effects during the growth of Si{C} monocrystals by the + sublimation method", + journal = "J. Cryst. Growth", + volume = "131", + number = "1-2", + pages = "71--74", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90397-F", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d", + author = "R. A. Stein and P. Lanig", + notes = "6h and 4h, sublimation technique", +} + @Article{nishino83, author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. Will", @@ -1470,7 +2230,7 @@ cubic Si{C} for semiconductor devices", publisher = "AIP", year = "1983", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "42", number = "5", pages = "460--462", @@ -1481,6 +2241,22 @@ notes = "cvd of 3c-sic on si, sic buffer layer", } +@Article{nagasawa06, + author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta", + title = "Reducing Planar Defects in 3{C}¿Si{C}", + journal = "Chemical Vapor Deposition", + volume = "12", + number = "8-9", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3862", + URL = "http://dx.doi.org/10.1002/cvde.200506466", + doi = "10.1002/cvde.200506466", + pages = "502--508", + keywords = "Defect structures, Epitaxy, Silicon carbide", + year = "2006", + notes = "cvd on si", +} + @Article{nishino87, author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono and Hiroyuki Matsunami", @@ -1489,7 +2265,7 @@ Si{C} on silicon", publisher = "AIP", year = "1987", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "61", number = "10", pages = "4889--4893", @@ -1506,7 +2282,7 @@ Single-Crystal Films on Si", publisher = "ECS", year = "1987", - journal = "Journal of The Electrochemical Society", + journal = "J. Electrochem. Soc.", volume = "134", number = "6", pages = "1558--1565", @@ -1517,6 +2293,44 @@ notes = "blue light emitting diodes (led)", } +@Article{powell87_2, + author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and + C. M. Chorey and T. T. Cheng and P. Pirouz", + collaboration = "", + title = "Improved beta-Si{C} heteroepitaxial films using + off-axis Si substrates", + publisher = "AIP", + year = "1987", + journal = "Appl. Phys. Lett.", + volume = "51", + number = "11", + pages = "823--825", + keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED + COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE + STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING + FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES; + OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS", + URL = "http://link.aip.org/link/?APL/51/823/1", + doi = "10.1063/1.98824", + notes = "improved sic on off-axis si substrates, reduced apbs", +} + +@Article{ueda90, + title = "Crystal growth of Si{C} by step-controlled epitaxy", + journal = "J. Cryst. Growth", + volume = "104", + number = "3", + pages = "695--700", + year = "1990", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(90)90013-B", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9", + author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki + Matsunami", + notes = "step-controlled epitaxy model", +} + @Article{kimoto93, author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo and Hiroyuki Matsunami", @@ -1524,7 +2338,7 @@ epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "73", number = "2", pages = "726--732", @@ -1536,6 +2350,49 @@ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } +@Article{powell90_2, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of high quality 6{H}-Si{C} epitaxial films on + vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1990", + journal = "Appl. Phys. Lett.", + volume = "56", + number = "15", + pages = "1442--1444", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY; + TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS; + DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1442/1", + doi = "10.1063/1.102492", + notes = "cvd of 6h-sic on 6h-sic", +} + +@Article{kong88_2, + author = "H. S. Kong and J. T. Glass and R. F. Davis", + collaboration = "", + title = "Chemical vapor deposition and characterization of + 6{H}-Si{C} thin films on off-axis 6{H}-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "J. Appl. Phys.", + volume = "64", + number = "5", + pages = "2672--2679", + keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED + COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON + MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL + STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR + PHASE EPITAXY; CRYSTAL ORIENTATION", + URL = "http://link.aip.org/link/?JAP/64/2672/1", + doi = "10.1063/1.341608", +} + @Article{powell90, author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. J. Choyke and J. L. Bradshaw and L. Henderson and M. @@ -1545,7 +2402,7 @@ 6{H}-Si{C} substrates", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "14", pages = "1353--1355", @@ -1558,6 +2415,48 @@ notes = "cvd of 3c-sic on 6h-sic", } +@Article{kong88, + author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A. + Rozgonyi and K. L. More", + collaboration = "", + title = "An examination of double positioning boundaries and + interface misfit in beta-Si{C} films on alpha-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "J. Appl. Phys.", + volume = "63", + number = "8", + pages = "2645--2650", + keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING + FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN + FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION; + MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE + STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS", + URL = "http://link.aip.org/link/?JAP/63/2645/1", + doi = "10.1063/1.341004", +} + +@Article{powell91, + author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G. + Jenkins and L. G. Matus and J. W. Yang and P. Pirouz + and W. J. Choyke and L. Clemen and M. Yoganathan", + collaboration = "", + title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films + on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1991", + journal = "Appl. Phys. Lett.", + volume = "59", + number = "3", + pages = "333--335", + keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE + PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL + MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE", + URL = "http://link.aip.org/link/?APL/59/333/1", + doi = "10.1063/1.105587", +} + @Article{yuan95, author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. Thokala and M. J. Loboda", @@ -1567,7 +2466,7 @@ silacyclobutane", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "2", pages = "1271--1273", @@ -1579,11 +2478,28 @@ notes = "3c-sic on 6h-sic, cvd, reduced temperature", } +@Article{kaneda87, + title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric + properties of its p-n junction", + journal = "J. Cryst. Growth", + volume = "81", + number = "1-4", + pages = "536--542", + year = "1987", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(87)90449-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1", + author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara + and Takao Tanaka", + notes = "first time ssmbe of 3c-sic on 6h-sic", +} + @Article{fissel95, title = "Epitaxial growth of Si{C} thin films on Si-stabilized [alpha]-Si{C}(0001) at low temperatures by solid-source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "154", number = "1-2", pages = "72--80", @@ -1603,7 +2519,7 @@ 6{H}--Si{C} by solid-source molecular beam epitaxy", publisher = "AIP", year = "1995", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "66", number = "23", pages = "3182--3184", @@ -1614,6 +2530,43 @@ notes = "mbe 3c-sic on si and 6h-sic", } +@Article{fissel96, + author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and + Bernd Schr{\"{o}}ter and Wolfgang Richter", + collaboration = "", + title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by + migration enhanced epitaxy controlled to an atomic + level using surface superstructures", + publisher = "AIP", + year = "1996", + journal = "Appl. Phys. Lett.", + volume = "68", + number = "9", + pages = "1204--1206", + keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; + NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION; + SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?APL/68/1204/1", + doi = "10.1063/1.115969", + notes = "ss mbe sic, superstructure, reconstruction", +} + +@Article{righi03, + title = "Ab initio Simulations of Homoepitaxial Si{C} Growth", + author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and + C. M. Bertoni and A. Catellani", + journal = "Phys. Rev. Lett.", + volume = "91", + number = "13", + pages = "136101", + numpages = "4", + year = "2003", + month = sep, + doi = "10.1103/PhysRevLett.91.136101", + publisher = "American Physical Society", + notes = "dft calculations mbe sic growth", +} + @Article{borders71, author = "J. A. Borders and S. T. Picraux and W. Beezhold", collaboration = "", @@ -1621,7 +2574,7 @@ {IMPLANTATION}", publisher = "AIP", year = "1971", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "18", number = "11", pages = "509--511", @@ -1631,6 +2584,87 @@ ideas", } +@Article{edelman76, + author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko + and E. V. Lubopytova", + title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon + by ion implantation", + publisher = "Taylor \& Francis", + year = "1976", + journal = "Radiat. Eff.", + volume = "29", + number = "1", + pages = "13--15", + URL = "http://www.informaworld.com/10.1080/00337577608233477", + notes = "3c-sic for different temperatures, amorphous, poly, + single crystalline", +} + +@Article{akimchenko80, + author = "I. P. Akimchenko and K. V. Kisseleva and V. V. + Krasnopevtsev and A. G. Touryanski and V. S. Vavilov", + title = "Structure and optical properties of silicon implanted + by high doses of 70 and 310 ke{V} carbon ions", + publisher = "Taylor \& Francis", + year = "1980", + journal = "Radiat. Eff.", + volume = "48", + number = "1", + pages = "7", + URL = "http://www.informaworld.com/10.1080/00337578008209220", + notes = "3c-sic nucleation by thermal spikes", +} + +@Article{kimura81, + title = "Structure and annealing properties of silicon carbide + thin layers formed by implantation of carbon ions in + silicon", + journal = "Thin Solid Films", + volume = "81", + number = "4", + pages = "319--327", + year = "1981", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(81)90516-2", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80", + author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi + Yugo", +} + +@Article{kimura82, + title = "Characteristics of the synthesis of [beta]-Si{C} by + the implantation of carbon ions into silicon", + journal = "Thin Solid Films", + volume = "94", + number = "3", + pages = "191--198", + year = "1982", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(82)90295-4", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd", + author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi + Yugo", +} + +@Article{reeson86, + author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and + C. D. Meekison and C. Marsh and G. R. Booker and R. J. + Chater and J. A. Iulner and J. Davis", + title = "Formation mechanisms and structures of insulating + compounds formed in silicon by ion beam synthesis", + publisher = "Taylor \& Francis", + year = "1986", + journal = "Radiat. Eff.", + volume = "99", + number = "1", + pages = "71--81", + URL = "http://www.informaworld.com/10.1080/00337578608209614", + notes = "ibs, comparison with sio and sin, higher temp or time, + no c redistribution", +} + @Article{reeson87, author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and J. Davis and G. E. Celler", @@ -1639,7 +2673,7 @@ beam synthesis and incoherent lamp annealing", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "26", pages = "2242--2244", @@ -1650,13 +2684,36 @@ notes = "nice tem images, sic by ibs", } +@Article{martin90, + author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff + and M. Olivier and A. M. Papon and G. Rolland", + collaboration = "", + title = "High-temperature ion beam synthesis of cubic Si{C}", + publisher = "AIP", + year = "1990", + journal = "J. Appl. Phys.", + volume = "67", + number = "6", + pages = "2908--2912", + keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION + IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS; + TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION; + INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER + ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR + REACTIONS; MONOCRYSTALS", + URL = "http://link.aip.org/link/?JAP/67/2908/1", + doi = "10.1063/1.346092", + notes = "triple energy implantation to overcome high annealing + temepratures", +} + @Article{scace59, author = "R. I. Scace and G. A. Slack", collaboration = "", title = "Solubility of Carbon in Silicon and Germanium", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "30", number = "6", pages = "1551--1555", @@ -1665,6 +2722,68 @@ notes = "solubility of c in c-si, si-c phase diagram", } +@Article{hofker74, + author = "W. Hofker and H. Werner and D. Oosthoek and N. + Koeman", + affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research + Laboratories Eindhoven Netherlands Eindhoven + Netherlands", + title = "Boron implantations in silicon: {A} comparison of + charge carrier and boron concentration profiles", + journal = "Appl. Phys. A", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0947-8396", + keyword = "Physics and Astronomy", + pages = "125--133", + volume = "4", + issue = "2", + URL = "http://dx.doi.org/10.1007/BF00884267", + note = "10.1007/BF00884267", + year = "1974", + notes = "first time ted (only for boron?)", +} + +@Article{michel87, + author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R. + H. Kastl", + collaboration = "", + title = "Rapid annealing and the anomalous diffusion of ion + implanted boron into silicon", + publisher = "AIP", + year = "1987", + journal = "Appl. Phys. Lett.", + volume = "50", + number = "7", + pages = "416--418", + keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION; + BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY + HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY", + URL = "http://link.aip.org/link/?APL/50/416/1", + doi = "10.1063/1.98160", + notes = "ted of boron in si", +} + +@Article{cowern90, + author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F. + Jos", + collaboration = "", + title = "Transient diffusion of ion-implanted {B} in Si: Dose, + time, and matrix dependence of atomic and electrical + profiles", + publisher = "AIP", + year = "1990", + journal = "J. Appl. Phys.", + volume = "68", + number = "12", + pages = "6191--6198", + keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME + DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS; + CRYSTALS; AMORPHIZATION", + URL = "http://link.aip.org/link/?JAP/68/6191/1", + doi = "10.1063/1.346910", + notes = "ted of boron in si", +} + @Article{cowern96, author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and F. W. Saris and W. Vandervorst", @@ -1673,7 +2792,7 @@ {B} in silicon", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "8", pages = "1150--1152", @@ -1688,8 +2807,7 @@ @Article{stolk95, title = "Implantation and transient boron diffusion: the role of the silicon self-interstitial", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "96", number = "1-2", pages = "187--195", @@ -1713,7 +2831,7 @@ diffusion in ion-implanted silicon", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "81", number = "9", pages = "6031--6050", @@ -1729,7 +2847,7 @@ of Si[sub 1 - y]{C}[sub y] random alloy layers", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "64", number = "3", pages = "324--326", @@ -1749,7 +2867,7 @@ - x - y]Ge[sub x]{C}[sub y]", publisher = "AIP", year = "1991", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "70", number = "4", pages = "2470--2472", @@ -1765,7 +2883,7 @@ author = "E Kasper", title = "Superlattices of group {IV} elements, a new possibility to produce direct band gap material", - journal = "Physica Scripta", + journal = "Phys. Scr.", volume = "T35", pages = "232--236", URL = "http://stacks.iop.org/1402-4896/T35/232", @@ -1774,6 +2892,136 @@ quasi-direct one", } +@Article{eberl92, + author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang + and F. K. LeGoues", + collaboration = "", + title = "Growth and strain compensation effects in the ternary + Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "24", + pages = "3033--3035", + keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS; + TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM + EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL + STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE + STUDIES", + URL = "http://link.aip.org/link/?APL/60/3033/1", + doi = "10.1063/1.106774", +} + +@Article{powell93, + author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A. + Ek and S. S. Iyer", + collaboration = "", + title = "Stability of strained Si[sub 1 - y]{C}[sub y] random + alloy layers", + publisher = "AVS", + year = "1993", + journal = "J. Vac. Sci. Technol. B", + volume = "11", + number = "3", + pages = "1064--1068", + location = "Ottawa (Canada)", + keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS; + METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR + BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA; + TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS", + URL = "http://link.aip.org/link/?JVB/11/1064/1", + doi = "10.1116/1.587008", + notes = "substitutional c in si by mbe", +} + +@Article{powell93_2, + title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties + of the ternary system", + journal = "J. Cryst. Growth", + volume = "127", + number = "1-4", + pages = "425--429", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90653-E", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e", + author = "A. R. Powell and K. Eberl and B. A. Ek and S. S. + Iyer", +} + +@Article{osten94, + author = "H. J. Osten", + title = "Modification of Growth Modes in Lattice-Mismatched + Epitaxial Systems: Si/Ge", + journal = "phys. status solidi (a)", + volume = "145", + number = "2", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-396X", + URL = "http://dx.doi.org/10.1002/pssa.2211450203", + doi = "10.1002/pssa.2211450203", + pages = "235--245", + year = "1994", +} + +@Article{dietrich94, + title = "Lattice distortion in a strain-compensated + $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon", + author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M. + Methfessel and P. Zaumseil", + journal = "Phys. Rev. B", + volume = "49", + number = "24", + pages = "17185--17190", + numpages = "5", + year = "1994", + month = jun, + doi = "10.1103/PhysRevB.49.17185", + publisher = "American Physical Society", +} + +@Article{osten94_2, + author = "H. J. Osten and E. Bugiel and P. Zaumseil", + collaboration = "", + title = "Growth of an inverse tetragonal distorted SiGe layer + on Si(001) by adding small amounts of carbon", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "64", + number = "25", + pages = "3440--3442", + keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON + ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM; + XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL + LATTICES", + URL = "http://link.aip.org/link/?APL/64/3440/1", + doi = "10.1063/1.111235", + notes = "inversely strained / distorted heterostructure", +} + +@Article{iyer92, + author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K. + LeGoues and J. C. Tsang and F. Cardone", + collaboration = "", + title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by + molecular beam epitaxy", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "3", + pages = "356--358", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM + EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS; + FILM GROWTH; MICROSTRUCTURE", + URL = "http://link.aip.org/link/?APL/60/356/1", + doi = "10.1063/1.106655", +} + @Article{osten99, author = "H. J. Osten and J. Griesche and S. Scalese", collaboration = "", @@ -1782,7 +3030,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1999", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "74", number = "6", pages = "836--838", @@ -1791,7 +3039,21 @@ compounds", URL = "http://link.aip.org/link/?APL/74/836/1", doi = "10.1063/1.123384", - notes = "substitutional c in si", + notes = "substitutional c in si by mbe", +} + +@Article{born27, + author = "M. Born and R. Oppenheimer", + title = "Zur Quantentheorie der Molekeln", + journal = "Ann. Phys. (Leipzig)", + volume = "389", + number = "20", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19273892002", + doi = "10.1002/andp.19273892002", + pages = "457--484", + year = "1927", } @Article{hohenberg64, @@ -1809,6 +3071,51 @@ notes = "density functional theory, dft", } +@Article{thomas27, + title = "The calculation of atomic fields", + author = "L. H. Thomas", + journal = "Proc. Cambridge Philos. Soc.", + volume = "23", + pages = "542--548", + year = "1927", + doi = "10.1017/S0305004100011683", +} + +@Article{fermi27, + title = "", + author = "E. Fermi", + journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat. + Rend.", + volume = "6", + pages = "602", + year = "1927", +} + +@Article{hartree28, + title = "The Wave Mechanics of an Atom with a Non-Coulomb + Central Field. Part {I}. Theory and Methods", + author = "D. R. Hartree", + journal = "Proc. Cambridge Philos. Soc.", + volume = "24", + pages = "89--110", + year = "1928", + doi = "10.1017/S0305004100011919", +} + +@Article{slater29, + title = "The Theory of Complex Spectra", + author = "J. C. Slater", + journal = "Phys. Rev.", + volume = "34", + number = "10", + pages = "1293--1322", + numpages = "29", + year = "1929", + month = nov, + doi = "10.1103/PhysRev.34.1293", + publisher = "American Physical Society", +} + @Article{kohn65, title = "Self-Consistent Equations Including Exchange and Correlation Effects", @@ -1825,6 +3132,81 @@ notes = "dft, exchange and correlation", } +@Article{kohn96, + title = "Density Functional and Density Matrix Method Scaling + Linearly with the Number of Atoms", + author = "W. Kohn", + journal = "Phys. Rev. Lett.", + volume = "76", + number = "17", + pages = "3168--3171", + numpages = "3", + year = "1996", + month = apr, + doi = "10.1103/PhysRevLett.76.3168", + publisher = "American Physical Society", +} + +@Article{kohn98, + title = "Edge Electron Gas", + author = "Walter Kohn and Ann E. Mattsson", + journal = "Phys. Rev. Lett.", + volume = "81", + number = "16", + pages = "3487--3490", + numpages = "3", + year = "1998", + month = oct, + doi = "10.1103/PhysRevLett.81.3487", + publisher = "American Physical Society", +} + +@Article{kohn99, + title = "Nobel Lecture: Electronic structure of matter---wave + functions and density functionals", + author = "W. Kohn", + journal = "Rev. Mod. Phys.", + volume = "71", + number = "5", + pages = "1253--1266", + numpages = "13", + year = "1999", + month = oct, + doi = "10.1103/RevModPhys.71.1253", + publisher = "American Physical Society", +} + +@Article{payne92, + title = "Iterative minimization techniques for ab initio + total-energy calculations: molecular dynamics and + conjugate gradients", + author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A. + Arias and J. D. Joannopoulos", + journal = "Rev. Mod. Phys.", + volume = "64", + number = "4", + pages = "1045--1097", + numpages = "52", + year = "1992", + month = oct, + doi = "10.1103/RevModPhys.64.1045", + publisher = "American Physical Society", +} + +@Article{levy82, + title = "Electron densities in search of Hamiltonians", + author = "Mel Levy", + journal = "Phys. Rev. A", + volume = "26", + number = "3", + pages = "1200--1208", + numpages = "8", + year = "1982", + month = sep, + doi = "10.1103/PhysRevA.26.1200", + publisher = "American Physical Society", +} + @Article{ruecker94, title = "Strain-stabilized highly concentrated pseudomorphic $Si1-x$$Cx$ layers in Si", @@ -1839,15 +3221,33 @@ month = may, doi = "10.1103/PhysRevLett.72.3578", publisher = "American Physical Society", - notes = "high c concentration in si, heterostructure, starined + notes = "high c concentration in si, heterostructure, strained si, dft", } +@Article{yagi02, + title = "Phosphorous Doping of Strain-Induced + Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\ + by Low-Temperature Chemical Vapor Deposition", + author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and + Yuichi Yoneyama and Akira Yamada and Makoto Konagai", + journal = "Japanese J. Appl. Phys.", + volume = "41", + number = "Part 1, No. 4B", + pages = "2472--2475", + numpages = "3", + year = "2002", + URL = "http://jjap.jsap.jp/link?JJAP/41/2472/", + doi = "10.1143/JJAP.41.2472", + publisher = "The Japan Society of Applied Physics", + notes = "experimental charge carrier mobility in strained si", +} + @Article{chang05, title = "Electron Transport Model for Strained Silicon-Carbon Alloy", author = "Shu-Tong Chang and Chung-Yi Lin", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "44", number = "4B", pages = "2257--2262", @@ -1856,18 +3256,60 @@ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/", doi = "10.1143/JJAP.44.2257", publisher = "The Japan Society of Applied Physics", - notes = "enhance of electron mobility in starined si", + notes = "enhance of electron mobility in strained si", } -@Article{osten97, - author = "H. J. Osten and P. Gaworzewski", +@Article{kissinger94, + author = "W. Kissinger and M. Weidner and H. J. Osten and M. + Eichler", collaboration = "", - title = "Charge transport in strained Si[sub 1 - y]{C}[sub y] + title = "Optical transitions in strained Si[sub 1 - y]{C}[sub + y] layers on Si(001)", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "65", + number = "26", + pages = "3356--3358", + keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS; + CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION + SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE; + ENERGY LEVELS; ENERGYLEVEL TRANSITIONS", + URL = "http://link.aip.org/link/?APL/65/3356/1", + doi = "10.1063/1.112390", + notes = "strained si influence on optical properties", +} + +@Article{osten96, + author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P. + Zaumseil", + collaboration = "", + title = "Substitutional versus interstitial carbon + incorporation during pseudomorphic growth of Si[sub 1 - + y]{C}[sub y] on Si(001)", + publisher = "AIP", + year = "1996", + journal = "J. Appl. Phys.", + volume = "80", + number = "12", + pages = "6711--6715", + keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH; + MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION; + XRD; STRAINS", + URL = "http://link.aip.org/link/?JAP/80/6711/1", + doi = "10.1063/1.363797", + notes = "mbe substitutional vs interstitial c incorporation", +} + +@Article{osten97, + author = "H. J. Osten and P. Gaworzewski", + collaboration = "", + title = "Charge transport in strained Si[sub 1 - y]{C}[sub y] and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on Si(001)", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "82", number = "10", pages = "4977--4981", @@ -1921,7 +3363,7 @@ potential energy surfaces", publisher = "AIP", year = "2009", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "130", number = "11", eid = "114711", @@ -1942,7 +3384,7 @@ molecular dynamics method", publisher = "AIP", year = "1981", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "52", number = "12", pages = "7182--7190", @@ -2039,7 +3481,7 @@ } @Article{parcas_md, - title = "{PARCAS} molecular dynamics code", + journal = "{PARCAS} molecular dynamics code", author = "K. Nordlund", year = "2008", } @@ -2067,7 +3509,7 @@ simulation of infrequent events", publisher = "AIP", year = "1997", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "106", number = "11", pages = "4665--4677", @@ -2082,13 +3524,13 @@ } @Article{sorensen2000, - author = "Mads R. S\o rensen and Arthur F. Voter", + author = "Mads R. S{\o }rensen and Arthur F. Voter", collaboration = "", title = "Temperature-accelerated dynamics for simulation of infrequent events", publisher = "AIP", year = "2000", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "112", number = "21", pages = "9599--9606", @@ -2122,7 +3564,7 @@ simulation", publisher = "AIP", year = "1999", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "110", number = "19", pages = "9401--9410", @@ -2141,7 +3583,7 @@ to the production of amorphous silicon", publisher = "AIP", year = "2005", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "122", number = "15", eid = "154509", @@ -2162,7 +3604,7 @@ difficult?", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "62", number = "25", pages = "3336--3338", @@ -2171,12 +3613,14 @@ ENERGY", URL = "http://link.aip.org/link/?APL/62/3336/1", doi = "10.1063/1.109063", - notes = "interfacial energy of cubic sic and si", + notes = "interfacial energy of cubic sic and si, si self + interstitials necessary for precipitation, volume + decrease, high interface energy", } @Article{chaussende08, title = "Prospects for 3{C}-Si{C} bulk crystal growth", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "310", number = "5", pages = "976--981", @@ -2194,6 +3638,19 @@ metastable", } +@Article{chaussende07, + author = "D. Chaussende and P. J. Wellmann and M. Pons", + title = "Status of Si{C} bulk growth processes", + journal = "J. Phys. D", + volume = "40", + number = "20", + pages = "6150", + URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02", + year = "2007", + notes = "review of sic single crystal growth methods, process + modelling", +} + @Article{feynman39, title = "Forces in Molecules", author = "R. P. Feynman", @@ -2253,7 +3710,7 @@ 3{C}-Si{C}/Si (001) interface", publisher = "AIP", year = "2009", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "106", number = "7", eid = "073522", @@ -2277,7 +3734,7 @@ growth on Si(001) surface", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "7", pages = "4438--4445", @@ -2290,6 +3747,20 @@ model, interface", } +@Article{kitabatake97, + author = "Makoto Kitabatake", + title = "Simulations and Experiments of 3{C}-Si{C}/Si + Heteroepitaxial Growth", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "phys. status solidi (b)", + volume = "202", + pages = "405--420", + URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + notes = "3c-sic heteroepitaxial growth on si off-axis model", +} + @Article{chirita97, title = "Strain relaxation and thermal stability of the 3{C}-Si{C}(001)/Si(001) interface: {A} molecular @@ -2366,7 +3837,7 @@ @Article{hornstra58, title = "Dislocations in the diamond lattice", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "5", number = "1-2", pages = "129--141", @@ -2379,6 +3850,24 @@ notes = "dislocations in diamond lattice", } +@Article{deguchi92, + title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon + Ion `Hot' Implantation", + author = "Masahiro Deguchi and Makoto Kitabatake and Takashi + Hirao and Naoki Arai and Tomio Izumi", + journal = "Japanese J. Appl. Phys.", + volume = "31", + number = "Part 1, No. 2A", + pages = "343--347", + numpages = "4", + year = "1992", + URL = "http://jjap.ipap.jp/link?JJAP/31/343/", + doi = "10.1143/JJAP.31.343", + publisher = "The Japan Society of Applied Physics", + notes = "c-c bonds in c implanted si, hot implantation + efficiency, c-c hard to break by thermal annealing", +} + @Article{eichhorn99, author = "F. Eichhorn and N. Schell and W. Matz and R. K{\"{o}}gler", @@ -2388,7 +3877,7 @@ synchrotron x-ray diffraction", publisher = "AIP", year = "1999", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "86", number = "8", pages = "4184--4187", @@ -2409,7 +3898,7 @@ carbon ion implantation", publisher = "AIP", year = "2002", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "91", number = "3", pages = "1287--1292", @@ -2419,7 +3908,7 @@ URL = "http://link.aip.org/link/?JAP/91/1287/1", doi = "10.1063/1.1428105", notes = "3c-sic alignement to si host in ibs depending on - temperature, might explain c int to c sub trafo", + temperature, might explain c into c sub trafo", } @Article{lucas10, @@ -2428,7 +3917,7 @@ silicon carbide: calculation of bulk properties, high-pressure phases, point and extended defects, and amorphous structures", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "22", number = "3", pages = "035802", @@ -2442,7 +3931,7 @@ Beauchamp", title = "Comparison between classical potentials and ab initio methods for silicon under large shear", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "15", number = "41", pages = "6943", @@ -2456,7 +3945,7 @@ title = "Verification of Tersoff's Potential for Static Structural Analysis of Solids of Group-{IV} Elements", author = "Koji Moriguchi and Akira Shintani", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "37", number = "Part 1, No. 2", pages = "414--422", @@ -2505,8 +3994,7 @@ @Article{nordlund97, title = "Repulsive interatomic potentials calculated using Hartree-Fock and density-functional theory methods", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "132", number = "1", pages = "45--54", @@ -2523,7 +4011,7 @@ title = "Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "6", number = "1", pages = "15--50", @@ -2551,7 +4039,22 @@ notes = "paw method", } -@Article{hamann79, +@InCollection{cohen70, + title = "The Fitting of Pseudopotentials to Experimental Data + and Their Subsequent Application", + editor = "Frederick Seitz Henry Ehrenreich and David Turnbull", + publisher = "Academic Press", + year = "1970", + volume = "24", + pages = "37--248", + series = "Solid State Physics", + ISSN = "0081-1947", + doi = "DOI: 10.1016/S0081-1947(08)60070-3", + URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3", + author = "Marvin L. Cohen and Volker Heine", +} + +%@Article{hamann79, title = "Norm-Conserving Pseudopotentials", author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang", journal = "Phys. Rev. Lett.", @@ -2566,6 +4069,35 @@ notes = "norm-conserving pseudopotentials", } +@Article{kleinman82, + journal = "Phys. Rev. Lett.", + month = may, + doi = "10.1103/PhysRevLett.48.1425", + issue = "20", + author = "Leonard Kleinman and D. M. Bylander", + title = "Efficacious Form for Model Pseudopotentials", + year = "1982", + URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425", + publisher = "American Physical Society", + pages = "1425--1428", + volume = "48", +} + +@Article{troullier91, + title = "Efficient pseudopotentials for plane-wave + calculations", + author = "N. Troullier and Jos\'e Luriaas Martins", + journal = "Phys. Rev. B", + volume = "43", + number = "3", + pages = "1993--2006", + numpages = "13", + year = "1991", + month = jan, + doi = "10.1103/PhysRevB.43.1993", + publisher = "American Physical Society", +} + @Article{vanderbilt90, title = "Soft self-consistent pseudopotentials in a generalized eigenvalue formalism", @@ -2582,11 +4114,41 @@ notes = "vasp pseudopotentials", } +@Article{ceperley80, + title = "Ground State of the Electron Gas by a Stochastic + Method", + author = "D. M. Ceperley and B. J. Alder", + journal = "Phys. Rev. Lett.", + volume = "45", + number = "7", + pages = "566--569", + numpages = "3", + year = "1980", + month = aug, + doi = "10.1103/PhysRevLett.45.566", + publisher = "American Physical Society", +} + +@Article{perdew81, + title = "Self-interaction correction to density-functional + approximations for many-electron systems", + author = "J. P. Perdew and Alex Zunger", + journal = "Phys. Rev. B", + volume = "23", + number = "10", + pages = "5048--5079", + numpages = "31", + year = "1981", + month = may, + doi = "10.1103/PhysRevB.23.5048", + publisher = "American Physical Society", +} + @Article{perdew86, title = "Accurate and simple density functional for the electronic exchange energy: Generalized gradient approximation", - author = "John P. Perdew and Wang Yue", + author = "John P. Perdew and Yue Wang", journal = "Phys. Rev. B", volume = "33", number = "12", @@ -2602,7 +4164,7 @@ @Article{perdew02, title = "Generalized gradient approximations for exchange and correlation: {A} look backward and forward", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "172", number = "1-2", pages = "1--6", @@ -2634,6 +4196,20 @@ notes = "gga pw91 (as in vasp)", } +@Article{chadi73, + title = "Special Points in the Brillouin Zone", + author = "D. J. Chadi and Marvin L. Cohen", + journal = "Phys. Rev. B", + volume = "8", + number = "12", + pages = "5747--5753", + numpages = "6", + year = "1973", + month = dec, + doi = "10.1103/PhysRevB.8.5747", + publisher = "American Physical Society", +} + @Article{baldereschi73, title = "Mean-Value Point in the Brillouin Zone", author = "A. Baldereschi", @@ -2649,10 +4225,24 @@ notes = "mean value k point", } +@Article{monkhorst76, + title = "Special points for Brillouin-zone integrations", + author = "Hendrik J. Monkhorst and James D. Pack", + journal = "Phys. Rev. B", + volume = "13", + number = "12", + pages = "5188--5192", + numpages = "4", + year = "1976", + month = jun, + doi = "10.1103/PhysRevB.13.5188", + publisher = "American Physical Society", +} + @Article{zhu98, title = "Ab initio pseudopotential calculations of dopant diffusion in Si", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "12", number = "4", pages = "309--318", @@ -2678,7 +4268,7 @@ 950 [degree]{C}", publisher = "AIP", year = "1995", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "66", number = "20", pages = "2646--2648", @@ -2700,7 +4290,7 @@ alloys", publisher = "AIP", year = "1998", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "84", number = "8", pages = "4631--4633", @@ -2717,13 +4307,30 @@ author = "R Jones and B J Coomer and P R Briddon", title = "Quantum mechanical modelling of defects in semiconductors", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "16", number = "27", pages = "S2643", URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004", year = "2004", - notes = "ab inito init, vibrational modes, c defect in si", + notes = "ab inito dft intro, vibrational modes, c defect in + si", +} + +@Article{jones89, + doi = "10.1103/RevModPhys.61.689", + month = jul, + issue = "3", + author = "R. O. Jones and O. Gunnarsson", + year = "1989", + URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689", + publisher = "American Physical Society", + title = "The density functional formalism, its applications and + prospects", + pages = "689--746", + journal = "Rev. Mod. Phys.", + volume = "61", + notes = "dft intro", } @Article{park02, @@ -2736,7 +4343,7 @@ molecular-beam epitaxy", publisher = "AIP", year = "2002", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "91", number = "9", pages = "5716--5727", @@ -2781,10 +4388,25 @@ carbon defect, formation energies", } +@Article{besson91, + title = "Electronic structure of interstitial carbon in + silicon", + author = "Morgan Besson and Gary G. DeLeo", + journal = "Phys. Rev. B", + volume = "43", + number = "5", + pages = "4028--4033", + numpages = "5", + year = "1991", + month = feb, + doi = "10.1103/PhysRevB.43.4028", + publisher = "American Physical Society", +} + @Article{kaxiras96, title = "Review of atomistic simulations of surface diffusion and growth on semiconductors", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "6", number = "2", pages = "158--172", @@ -2840,7 +4462,7 @@ @Article{chen98, title = "Production and recovery of defects in Si{C} after irradiation and deformation", - journal = "Journal of Nuclear Materials", + journal = "J. Nucl. Mater.", volume = "258-263", number = "Part 2", pages = "1803--1808", @@ -2855,8 +4477,7 @@ @Article{weber01, title = "Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "175-177", number = "", pages = "26--30", @@ -2866,10 +4487,6 @@ doi = "DOI: 10.1016/S0168-583X(00)00542-5", URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577", author = "W. J. Weber and W. Jiang and S. Thevuthasan", - keywords = "Amorphization", - keywords = "Irradiation effects", - keywords = "Thermal recovery", - keywords = "Silicon carbide", } @Article{bockstedte03, @@ -2904,3 +4521,1722 @@ doi = "10.1103/PhysRevB.68.155208", publisher = "American Physical Society", } + +@Article{losev27, + journal = "Telegrafiya i Telefoniya bez Provodov", + volume = "44", + pages = "485--494", + year = "1927", + author = "O. V. Lossev", +} + +@Article{losev28, + title = "Luminous carborundum detector and detection effect and + oscillations with crystals", + journal = "Philos. Mag. Series 7", + volume = "6", + number = "39", + pages = "1024--1044", + year = "1928", + URL = "http://www.informaworld.com/10.1080/14786441108564683", + author = "O. V. Lossev", +} + +@Article{losev29, + journal = "Physik. Zeitschr.", + volume = "30", + pages = "920--923", + year = "1929", + author = "O. V. Lossev", +} + +@Article{losev31, + journal = "Physik. Zeitschr.", + volume = "32", + pages = "692--696", + year = "1931", + author = "O. V. Lossev", +} + +@Article{losev33, + journal = "Physik. Zeitschr.", + volume = "34", + pages = "397--403", + year = "1933", + author = "O. V. Lossev", +} + +@Article{round07, + title = "A note on carborundum", + journal = "Electrical World", + volume = "49", + pages = "308", + year = "1907", + author = "H. J. Round", +} + +@Article{vashishath08, + title = "Recent trends in silicon carbide device research", + journal = "Mj. Int. J. Sci. Tech.", + volume = "2", + number = "03", + pages = "444--470", + year = "2008", + author = "Munish Vashishath and Ashoke K. Chatterjee", + URL = "http://www.doaj.org/doaj?func=abstract&id=286746", + notes = "sic polytype electronic properties", +} + +@Article{nelson69, + author = "W. E. Nelson and F. A. Halden and A. Rosengreen", + collaboration = "", + title = "Growth and Properties of beta-Si{C} Single Crystals", + publisher = "AIP", + year = "1966", + journal = "J. 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Meguro and Y. Aoyagi and M. Kawai + and S. Misawa and E. Sakuma and S. Yoshida", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{tanaka94, + author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis", + collaboration = "", + title = "Effects of gas flow ratio on silicon carbide thin film + growth mode and polytype formation during gas-source + molecular beam epitaxy", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "65", + number = "22", + pages = "2851--2853", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED; + TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; + NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS + FLOW; FLOW RATE", + URL = "http://link.aip.org/link/?APL/65/2851/1", + doi = "10.1063/1.112513", + notes = "gas source mbe of 6h-sic on 6h-sic", +} + +@Article{fuyuki97, + author = "T. Fuyuki and T. Hatayama and H. Matsunami", + title = "Heterointerface Control and Epitaxial Growth of + 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "phys. status solidi (b)", + volume = "202", + pages = "359--378", + notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower + temperatures 750", +} + +@Article{takaoka98, + title = "Initial stage of Si{C} growth on Si(1 0 0) surface", + journal = "J. Cryst. Growth", + volume = "183", + number = "1-2", + pages = "175--182", + year = "1998", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/S0022-0248(97)00391-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918", + author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki", + keywords = "Reflection high-energy electron diffraction (RHEED)", + keywords = "Scanning electron microscopy (SEM)", + keywords = "Silicon carbide", + keywords = "Silicon", + keywords = "Island growth", + notes = "lower temperature, 550-700", +} + +@Article{hatayama95, + title = "Low-temperature heteroepitaxial growth of cubic Si{C} + on Si using hydrocarbon radicals by gas source + molecular beam epitaxy", + journal = "J. Cryst. Growth", + volume = "150", + number = "Part 2", + pages = "934--938", + year = "1995", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)80077-P", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e", + author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki + and Hiroyuki Matsunami", +} + +@Article{heine91, + author = "Volker Heine and Ching Cheng and Richard J. Needs", + title = "The Preference of Silicon Carbide for Growth in the + Metastable Cubic Form", + journal = "J. Am. Ceram. Soc.", + volume = "74", + number = "10", + publisher = "Blackwell Publishing Ltd", + ISSN = "1551-2916", + URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x", + doi = "10.1111/j.1151-2916.1991.tb06811.x", + pages = "2630--2633", + keywords = "silicon carbide, crystal growth, crystal structure, + calculations, stability", + year = "1991", + notes = "3c-sic metastable, 3c-sic preferred growth, sic + polytype dft calculation refs", +} + +@Article{allendorf91, + title = "The adsorption of {H}-atoms on polycrystalline + [beta]-silicon carbide", + journal = "Surf. Sci.", + volume = "258", + number = "1-3", + pages = "177--189", + year = "1991", + note = "", + ISSN = "0039-6028", + doi = "DOI: 10.1016/0039-6028(91)90912-C", + URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3", + author = "Mark D. Allendorf and Duane A. Outka", + notes = "h adsorption on 3c-sic", +} + +@Article{eaglesham93, + author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and + D. P. Adams and S. M. Yalisove", + collaboration = "", + title = "Effect of {H} on Si molecular-beam epitaxy", + publisher = "AIP", + year = "1993", + journal = "J. Appl. Phys.", + volume = "74", + number = "11", + pages = "6615--6618", + keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE + CONTAMINATION; SIMS; SEGREGATION; IMPURITIES; + DIFFUSION; ADSORPTION", + URL = "http://link.aip.org/link/?JAP/74/6615/1", + doi = "10.1063/1.355101", + notes = "h incorporation on si surface, lower surface + mobility", +} + +@Article{newman85, + author = "Ronald C. Newman", + title = "Carbon in Crystalline Silicon", + journal = "MRS Proc.", + volume = "59", + number = "", + pages = "403", + year = "1985", + doi = "10.1557/PROC-59-403", + URL = "http://dx.doi.org/10.1557/PROC-59-403", + eprint = "http://journals.cambridge.org/article_S194642740054367X", +} + +@Article{newman61, + title = "The diffusivity of carbon in silicon", + journal = "J. Phys. Chem. Solids", + volume = "19", + number = "3-4", + pages = "230--234", + year = "1961", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(61)90032-4", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd", + author = "R. C. Newman and J. Wakefield", + notes = "diffusivity of substitutional c in si", +} + +@Article{goesele85, + author = "U. Gösele", + title = "The Role of Carbon and Point Defects in Silicon", + journal = "MRS Proc.", + volume = "59", + number = "", + pages = "419", + year = "1985", + doi = "10.1557/PROC-59-419", + URL = "http://dx.doi.org/10.1557/PROC-59-419", + eprint = "http://journals.cambridge.org/article_S1946427400543681", +} + +@Article{mukashev82, + title = "Defects in Carbon-Implanted Silicon", + author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru + Fukuoka and Haruo Saito", + journal = "Japanese J. Appl. Phys.", + volume = "21", + number = "Part 1, No. 2", + pages = "399--400", + numpages = "1", + year = "1982", + URL = "http://jjap.jsap.jp/link?JJAP/21/399/", + doi = "10.1143/JJAP.21.399", + publisher = "The Japan Society of Applied Physics", +} + +@Article{puska98, + title = "Convergence of supercell calculations for point + defects in semiconductors: Vacancy in silicon", + author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R. + M. Nieminen", + journal = "Phys. Rev. B", + volume = "58", + number = "3", + pages = "1318--1325", + numpages = "7", + year = "1998", + month = jul, + doi = "10.1103/PhysRevB.58.1318", + publisher = "American Physical Society", + notes = "convergence k point supercell size, vacancy in + silicon", +} + +@Article{serre95, + author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A. + Romano-Rodr\'{\i}guez and J. R. Morante and R. + K{\"{o}}gler and W. Skorupa", + collaboration = "", + title = "Spectroscopic characterization of phases formed by + high-dose carbon ion implantation in silicon", + publisher = "AIP", + year = "1995", + journal = "J. Appl. Phys.", + volume = "77", + number = "7", + pages = "2978--2984", + keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS; + FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA; + PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE + DEPENDENCE; PRECIPITATES; ANNEALING", + URL = "http://link.aip.org/link/?JAP/77/2978/1", + doi = "10.1063/1.358714", +} + +@Article{romano-rodriguez96, + title = "Detailed analysis of [beta]-Si{C} formation by high + dose carbon ion implantation in silicon", + journal = "Materials Science and Engineering B", + volume = "36", + number = "1-3", + pages = "282--285", + year = "1996", + note = "European Materials Research Society 1995 Spring + Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and + Oxygen in Silicon and in Other Elemental + Semiconductors", + ISSN = "0921-5107", + doi = "DOI: 10.1016/0921-5107(95)01283-4", + URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408", + author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio + and A. Pérez-Rodríguez and J. R. Morante and R. Kögler + and W. Skorupa", + keywords = "Silicon", + keywords = "Ion implantation", + notes = "incoherent 3c-sic precipitate", +} + +@Article{davidson75, + title = "The iterative calculation of a few of the lowest + eigenvalues and corresponding eigenvectors of large + real-symmetric matrices", + journal = "J. Comput. Phys.", + volume = "17", + number = "1", + pages = "87--94", + year = "1975", + note = "", + ISSN = "0021-9991", + doi = "DOI: 10.1016/0021-9991(75)90065-0", + URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650", + author = "Ernest R. Davidson", +} + +@Book{adorno_mm, + title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten + Leben", + author = "T. W. Adorno", + ISBN = "978-3-518-01236-9", + URL = "http://books.google.com/books?id=coZqRAAACAAJ", + year = "1994", + publisher = "Suhrkamp", +} + +@Misc{attenberger03, + author = "Wilfried Attenberger and Jörg Lindner and Bernd + Stritzker", + title = "A {method} {for} {forming} {a} {layered} + {semiconductor} {structure} {and} {corresponding} + {structure}", + year = "2003", + month = apr, + day = "24", + note = "WO 2003/034484 A3R4", + version = "A3R4", + howpublished = "Patent Application", + nationality = "WO", + filing_num = "EP0211423", + yearfiled = "2002", + monthfiled = "10", + dayfiled = "11", + pat_refs = "", + ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L + 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L + 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B", + us_class = "", + abstract = "The following invention provides a method for forming + a layered semiconductor structure having a layer (5) of + a first semiconductor material on a substrate (1; 1') + of at least one second semiconductor material, + comprising the steps of: providing said substrate (1; + 1'); burying said layer (5) of said first semiconductor + material in said substrate (1; 1'), said buried layer + (5) having an upper surface (105) and a lower surface + (105) and dividing said substrate (1; 1') into an upper + part (1a) and a lower part (1b; 1b', 1c); creating a + buried damage layer (10; 10'; 10'', 100'') which at + least partly adjoins and/or at least partly includes + said upper surface (105) of said buried layer (5); and + removing said upper part (1a) of said substrate (1; 1') + and said buried damage layer (10; 10'; 10'', 100'') for + exposing said buried layer (5). The invention also + provides a corresponding layered semiconductor + structure.", +} + +@Article{zunger01, + author = "Alex Zunger", + title = "Pseudopotential Theory of Semiconductor Quantum Dots", + journal = "physica status solidi (b)", + volume = "224", + number = "3", + publisher = "WILEY-VCH Verlag Berlin GmbH", + ISSN = "1521-3951", + URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + pages = "727--734", + keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11, + S8.12", + year = "2001", + notes = "configuration-interaction method, ci", +} + +@Article{robertson90, + author = "I. J. Robertson and M. C. Payne", + title = "k-point sampling and the k.p method in pseudopotential + total energy calculations", + journal = "Journal of Physics: Condensed Matter", + volume = "2", + number = "49", + pages = "9837", + URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010", + year = "1990", + notes = "kp method", +} + +@Article{lange11, + volume = "84", + journal = "Phys. Rev. B", + author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg + Neugebauer", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101", + doi = "10.1103/PhysRevB.84.085101", + year = "2011", + title = "Construction and performance of fully numerical + optimum atomic basis sets", + issue = "8", + publisher = "American Physical Society", + numpages = "11", + pages = "085101", + notes = "quamol, basis set, for planc", +} + +@Article{artacho91, + volume = "43", + journal = "Phys. Rev. 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Treatment of + constants of motion in resolvent method, partitioning + technique, and perturbation theory", + journal = "International Journal of Quantum Chemistry", + volume = "2", + number = "6", + publisher = "John Wiley & Sons, Inc.", + ISSN = "1097-461X", + URL = "http://dx.doi.org/10.1002/qua.560020612", + doi = "10.1002/qua.560020612", + pages = "867--931", + year = "1968", +} + +@Article{chadi77, + volume = "16", + journal = "Phys. Rev. B", + author = "D. J. Chadi", + month = oct, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.16.3572", + doi = "10.1103/PhysRevB.16.3572", + year = "1977", + title = "Localized-orbital description of wave functions and + energy bands in semiconductors", + issue = "8", + publisher = "American Physical Society", + pages = "3572--3578", + notes = "localized orbitals", +} + +@Article{wigner33, + volume = "43", + journal = "Phys. Rev.", + author = "E. Wigner and F. 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Dirac", + title = "The Quantum Theory of the Electron", + volume = "117", + number = "778", + pages = "610--624", + year = "1928", + doi = "10.1098/rspa.1928.0023", + URL = "http://rspa.royalsocietypublishing.org/content/117/778/610.short", + eprint = "http://rspa.royalsocietypublishing.org/content/117/778/610.full.pdf+html", + journal = "Proceedings of the Royal Society of London. Series A", + notes = "spin orbit origin, relativistic quantum theory", +} + +@Article{kleinman80, + title = "Relativistic norm-conserving pseudopotential", + author = "Leonard Kleinman", + journal = "Phys. Rev. B", + volume = "21", + issue = "6", + pages = "2630--2631", + year = "1980", + month = mar, + doi = "10.1103/PhysRevB.21.2630", + URL = "http://link.aps.org/doi/10.1103/PhysRevB.21.2630", + publisher = "American Physical Society", + notes = "first relativistic pseudopotential", +} + +@Article{bachelet82, + title = "Relativistic norm-conserving pseudopotentials", + author = "Giovanni B. Bachelet and M. Schl{\"u}ter", + journal = "Phys. Rev. B", + volume = "25", + issue = "4", + pages = "2103--2108", + year = "1982", + month = feb, + doi = "10.1103/PhysRevB.25.2103", + URL = "http://link.aps.org/doi/10.1103/PhysRevB.25.2103", + publisher = "American Physical Society", +} + +@Article{hybertsen86, + title = "Spin-orbit splitting in semiconductors and insulators + from the \textit{ab initio} pseudopotential", + author = "Mark S. Hybertsen and Steven G. Louie", + journal = "Phys. Rev. B", + volume = "34", + issue = "4", + pages = "2920--2922", + year = "1986", + month = aug, + doi = "10.1103/PhysRevB.34.2920", + URL = "http://link.aps.org/doi/10.1103/PhysRevB.34.2920", + publisher = "American Physical Society", + notes = "spin orbit pseudopotential formulation", +} + +@Article{hemstreet93, + title = "First-principles calculations of spin-orbit splittings + in solids using nonlocal separable pseudopotentials", + author = "L. A. Hemstreet and C. Y. Fong and J. S. Nelson", + journal = "Phys. Rev. B", + volume = "47", + issue = "8", + pages = "4238--4243", + year = "1993", + month = feb, + doi = "10.1103/PhysRevB.47.4238", + URL = "http://link.aps.org/doi/10.1103/PhysRevB.47.4238", + publisher = "American Physical Society", +} + +@Article{naveh07, + title = "Real-space pseudopotential method for spin-orbit + coupling within density functional theory", + author = "Doron Naveh and Leeor Kronik and Murilo L. Tiago and + James R. Chelikowsky", + journal = "Phys. Rev. B", + volume = "76", + issue = "15", + pages = "153407", + numpages = "4", + year = "2007", + month = oct, + doi = "10.1103/PhysRevB.76.153407", + URL = "http://link.aps.org/doi/10.1103/PhysRevB.76.153407", + publisher = "American Physical Society", + notes = "real space spin orbit pseudopotential implementation", +} + +@Article{verstraete08, + title = "Density functional perturbation theory with spin-orbit + coupling: Phonon band structure of lead", + author = "Matthieu J. Verstraete and Marc Torrent and + Fran\ifmmode \mbox{\c{c}}\else \c{c}\fi{}ois Jollet and + Gilles Z\'erah and Xavier Gonze", + journal = "Phys. Rev. B", + volume = "78", + issue = "4", + pages = "045119", + numpages = "9", + year = "2008", + month = jul, + doi = "10.1103/PhysRevB.78.045119", + URL = "http://link.aps.org/doi/10.1103/PhysRevB.78.045119", + publisher = "American Physical Society", +} + +@Article{cuadrado12, + author = "R. Cuadrado and J. I. Cerdá", + title = "Fully relativistic pseudopotential formalism under an + atomic orbital basis: spin-orbit splittings and + magnetic anisotropies", + journal = "Journal of Physics: Condensed Matter", + volume = "24", + number = "8", + pages = "086005", + URL = "http://stacks.iop.org/0953-8984/24/i=8/a=086005", + year = "2012", +} + +@Article{canning00, + title = "Parallel Empirical Pseudopotential Electronic + Structure Calculations for Million Atom Systems", + journal = "Journal of Computational Physics", + volume = "160", + number = "1", + pages = "29--41", + year = "2000", + note = "", + ISSN = "0021-9991", + doi = "http://dx.doi.org/10.1006/jcph.2000.6440", + URL = "http://www.sciencedirect.com/science/article/pii/S0021999100964404", + author = "A. Canning and L. W. Wang and A. Williamson and A. + Zunger", +} + +@Article{oliveira08, + title = "Generating relativistic pseudo-potentials with + explicit incorporation of semi-core states using {APE}, + the Atomic Pseudo-potentials Engine", + journal = "Computer Physics Communications", + volume = "178", + number = "7", + pages = "524--534", + year = "2008", + note = "", + ISSN = "0010-4655", + doi = "http://dx.doi.org/10.1016/j.cpc.2007.11.003", + URL = "http://www.sciencedirect.com/science/article/pii/S0010465507004651", + author = "Micael J. T. Oliveira and Fernando Nogueira", + keywords = "Pseudo-potential", + keywords = "Electronic structure", + keywords = "Density functional", +} + +@Article{fornberg88, + author = "Bengt Fornberg", + title = "Generation of finite difference formulas on + arbitrarily spaced grids", + journal = "Math. Comp.", + volume = "51", + number = "", + pages = "699--706", + year = "1988", + doi = "http://dx.doi.org/10.1090/S0025-5718-1988-0935077-", + URL = "http://dx.doi.org/10.1090/S0025-5718-1988-0935077-", +} + +@Article{fornberg94, + author = "Bengt Fornberg and David M. Sloan", + title = "A review of pseudospectral methods for solving partial + differential equations", + journal = "Acta Numerica", + volume = "3", + number = "", + pages = "203--267", + year = "1994", + doi = "10.1017/S0962492900002440", + URL = "http://dx.doi.org/10.1017/S0962492900002440", +} + +@Article{urbaszek03, + title = "Fine Structure of Highly Charged Excitons in + Semiconductor Quantum Dots", + author = "B. Urbaszek and R. J. Warburton and K. Karrai and B. + D. Gerardot and P. M. Petroff and J. M. Garcia", + journal = "Phys. Rev. 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