X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=671b85c510605b6ed6dafc91f2edf0c30e2508ca;hp=ebcc2675d90ac53426b7ed80fbee97f121e6cf67;hb=f09a21f8de5cb74fd56a0d083140bb8ca626afba;hpb=deb1c40d072e9bbb20e69d6365233dceeb9f2bb9 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index ebcc267..671b85c 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -2,6 +2,37 @@ % bibliography database % +@Article{schroedinger26, + author = "E. Schrödinger", + title = "Quantisierung als Eigenwertproblem", + journal = "Ann. Phys. (Leipzig)", + volume = "384", + number = "4", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19263840404", + doi = "10.1002/andp.19263840404", + pages = "361--376", + year = "1926", +} + +@Article{bloch29, + author = "Felix Bloch", + affiliation = "Institut d. Universität f. theor. Physik Leipzig", + title = "Über die Quantenmechanik der Elektronen in + Kristallgittern", + journal = "Z. Phys.", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0939-7922", + keyword = "Physics and Astronomy", + pages = "555--600", + volume = "52", + issue = "7", + URL = "http://dx.doi.org/10.1007/BF01339455", + note = "10.1007/BF01339455", + year = "1929", +} + @Article{albe_sic_pot, author = "Paul Erhart and Karsten Albe", title = "Analytical potential for atomistic simulations of @@ -24,6 +55,21 @@ doi = "10.1103/PhysRevB.71.035211", } +@Article{erhart04, + title = "The role of thermostats in modeling vapor phase + condensation of silicon nanoparticles", + journal = "Appl. Surf. Sci.", + volume = "226", + number = "1-3", + pages = "12--18", + year = "2004", + note = "EMRS 2003 Symposium F, Nanostructures from Clusters", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2003.11.003", + URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738", + author = "Paul Erhart and Karsten Albe", +} + @Article{albe2002, title = "Modeling the metal-semiconductor interaction: Analytical bond-order potential for platinum-carbon", @@ -42,7 +88,7 @@ @Article{newman65, title = "Vibrational absorption of carbon in silicon", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "26", number = "2", pages = "373--379", @@ -62,7 +108,7 @@ title = "Effect of Carbon on the Lattice Parameter of Silicon", publisher = "AIP", year = "1968", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "39", number = "9", pages = "4365--4368", @@ -73,7 +119,7 @@ @Article{bean71, title = "The solubility of carbon in pulled silicon crystals", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "32", number = "6", pages = "1211--1219", @@ -87,6 +133,17 @@ } @Article{capano97, + author = "M. A. Capano and R. J. Trew", + title = "Silicon carbide electronic materials and devices", + journal = "MRS Bull.", + year = "1997", + volume = "22", + number = "3", + pages = "19--22", + publisher = "MATERIALS RESEARCH SOCIETY", +} + +@Article{capano97_old, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", journal = "MRS Bull.", @@ -113,11 +170,12 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Appl. Phys. A: Mater. Sci. Process.", + journal = "Appl. Phys. A", volume = "76", pages = "827--835", month = mar, year = "2003", + URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/", notes = "dual implantation, sic prec enhanced by vacancies, precipitation by interstitial and substitutional carbon, both mechanisms explained + refs", @@ -126,7 +184,7 @@ @Article{skorupa96, title = "Carbon-mediated effects in silicon and in silicon-related materials", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "44", number = "2", pages = "101--143", @@ -247,7 +305,7 @@ author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon Diablo", - journal = "Comptes rendus de l'Académie des Sciences", + journal = "C. R. Acad. Sci.", volume = "139", pages = "773--786", year = "1904", @@ -265,7 +323,7 @@ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and Calvin H. Carter Jr. and D. Asbury", title = "Si{C} Seeded Boule Growth", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "3--8", year = "1998", @@ -523,6 +581,22 @@ entropy calculations", } +@Article{munro99, + title = "Defect migration in crystalline silicon", + author = "Lindsey J. Munro and David J. Wales", + journal = "Phys. Rev. B", + volume = "59", + number = "6", + pages = "3969--3980", + numpages = "11", + year = "1999", + month = feb, + doi = "10.1103/PhysRevB.59.3969", + publisher = "American Physical Society", + notes = "eigenvector following method, vacancy and interstiial + defect migration mechanisms", +} + @Article{colombo02, title = "Tight-binding theory of native point defects in silicon", @@ -554,6 +628,23 @@ silicon, si self interstitials, free energy", } +@Article{mattsson08, + title = "Electronic surface error in the Si interstitial + formation energy", + author = "Ann E. Mattsson and Ryan R. Wixom and Rickard + Armiento", + journal = "Phys. Rev. B", + volume = "77", + number = "15", + pages = "155211", + numpages = "7", + year = "2008", + month = apr, + doi = "10.1103/PhysRevB.77.155211", + publisher = "American Physical Society", + notes = "si self interstitial formation energies by dft", +} + @Article{goedecker02, title = "A Fourfold Coordinated Point Defect in Silicon", author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", @@ -923,7 +1014,7 @@ @Article{bean70, title = "Low temperature electron irradiation of silicon containing carbon", - journal = "Solid State Communications", + journal = "Solid State Commun.", volume = "8", number = "3", pages = "175--177", @@ -935,6 +1026,24 @@ author = "A. R. Bean and R. C. Newman", } +@Article{durand99, + author = "F. Durand and J. Duby", + affiliation = "EPM-Madylam, CNRS and INP Grenoble, France", + title = "Carbon solubility in solid and liquid silicon—{A} + review with reference to eutectic equilibrium", + journal = "Journal of Phase Equilibria", + publisher = "Springer New York", + ISSN = "1054-9714", + keyword = "Chemistry and Materials Science", + pages = "61--63", + volume = "20", + issue = "1", + URL = "http://dx.doi.org/10.1361/105497199770335956", + note = "10.1361/105497199770335956", + year = "1999", + notes = "better c solubility limit in silicon", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -990,7 +1099,7 @@ silicon", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "6", pages = "3815--3820", @@ -1035,7 +1144,7 @@ @Article{foell77, title = "The formation of swirl defects in silicon by agglomeration of self-interstitials", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "40", number = "1", pages = "90--108", @@ -1052,7 +1161,7 @@ @Article{foell81, title = "Microdefects in silicon and their relation to point defects", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "52", number = "Part 2", pages = "907--916", @@ -1089,8 +1198,8 @@ @InProceedings{werner96, author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. Eichler", - booktitle = "Ion Implantation Technology. Proceedings of the 11th - International Conference on", + booktitle = "Proceedings of the 11th International Conference on + Ion Implantation Technology.", title = "{TEM} investigation of {C}-Si defects in carbon implanted silicon", year = "1996", @@ -1130,7 +1239,7 @@ silicon", publisher = "AIP", year = "1984", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "45", number = "3", pages = "268--269", @@ -1142,6 +1251,26 @@ notes = "c diffusion due to si self-interstitials", } +@Article{fukami90, + author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano + and Cary Y. Yang", + collaboration = "", + title = "Characterization of SiGe/Si heterostructures formed by + Ge[sup + ] and {C}[sup + ] implantation", + publisher = "AIP", + year = "1990", + journal = "Appl. Phys. Lett.", + volume = "57", + number = "22", + pages = "2345--2347", + keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES; + FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM + SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE + EPITAXY; CARBON IONS; GERMANIUM IONS", + URL = "http://link.aip.org/link/?APL/57/2345/1", + doi = "10.1063/1.103888", +} + @Article{strane93, author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L. Doyle and S. T. Picraux and J. W. Mayer", @@ -1149,7 +1278,7 @@ title = "Metastable SiGe{C} formation by solid phase epitaxy", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "63", number = "20", pages = "2786--2788", @@ -1162,6 +1291,27 @@ doi = "10.1063/1.110334", } +@Article{goorsky92, + author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F. + Legoues and J. Angilello and F. Cardone", + collaboration = "", + title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si + strained layer superlattices", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "22", + pages = "2758--2760", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; + CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS + RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; + DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS", + URL = "http://link.aip.org/link/?APL/60/2758/1", + doi = "10.1063/1.106868", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -1232,6 +1382,24 @@ doi = "doi:10.1016/j.nimb.2006.12.118", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Periodically arranged, selforganised, nanometric, + amorphous precipitates have been observed after + high-fluence ion implantations into solids for a number + of ion/target combinations at certain implantation + conditions. A model describing the ordering process + based on compressive stress exerted by the amorphous + inclusions as a result of the density change upon + amorphisation is introduced. A Monte Carlo simulation + code, which focuses on high-fluence carbon + implantations into silicon, is able to reproduce + experimentally observed nanolamella distributions as + well as the formation of continuous amorphous layers. + By means of simulation, the selforganisation process + becomes traceable and detailed information about the + compositional and structural state during the ordering + process is obtained. Based on simulation results, a + recipe is proposed for producing broad distributions of + ordered lamellar structures.", } @Article{zirkelbach2006, @@ -1250,6 +1418,17 @@ doi = "doi:10.1016/j.nimb.2005.08.162", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "High-dose ion implantation of materials that undergo + drastic density change upon amorphization at certain + implantation conditions results in periodically + arranged, self-organized, nanometric configurations of + the amorphous phase. A simple model explaining the + phenomenon is introduced and implemented in a + Monte-Carlo simulation code. Through simulation + conditions for observing lamellar precipitates are + specified and additional information about the + compositional and structural state during the ordering + process is gained.", } @Article{zirkelbach2005, @@ -1268,6 +1447,21 @@ doi = "doi:10.1016/j.commatsci.2004.12.016", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Ion irradiation of materials, which undergo a drastic + density change upon amorphization have been shown to + exhibit selforganized, nanometric structures of the + amorphous phase in the crystalline host lattice. In + order to better understand the process a + Monte-Carlo-simulation code based on a simple model is + developed. In the present work we focus on high-dose + carbon implantations into silicon. The simulation is + able to reproduce results gained by cross-sectional TEM + measurements of high-dose carbon implanted silicon. + Necessary conditions can be specified for the + self-organization process and information is gained + about the compositional and structural state during the + ordering process which is difficult to be obtained by + experiment.", } @Article{zirkelbach09, @@ -1292,6 +1486,22 @@ keywords = "Nucleation", keywords = "Defect formation", keywords = "Molecular dynamics simulations", + abstract = "The precipitation process of silicon carbide in + heavily carbon doped silicon is not yet fully + understood. High resolution transmission electron + microscopy observations suggest that in a first step + carbon atoms form C-Si dumbbells on regular Si lattice + sites which agglomerate into large clusters. In a + second step, when the cluster size reaches a radius of + a few nm, the high interfacial energy due to the SiC/Si + lattice misfit of almost 20\% is overcome and the + precipitation occurs. By simulation, details of the + precipitation process can be obtained on the atomic + level. A recently proposed parametrization of a + Tersoff-like bond order potential is used to model the + system appropriately. Preliminary results gained by + molecular dynamics simulations using this potential are + presented.", } @Article{zirkelbach10, @@ -1308,29 +1518,79 @@ month = sep, doi = "10.1103/PhysRevB.82.094110", publisher = "American Physical Society", -} - -@Article{zirkelbach11a, - title = "First principles study of defects in carbon implanted - silicon", - journal = "to be published", - volume = "", - number = "", - pages = "", - year = "2011", - author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner - and W. G. Schmidt and E. Rauls", -} - -@Article{zirkelbach11b, - title = "...", - journal = "to be published", - volume = "", - number = "", - pages = "", - year = "2011", + abstract = "A comparative theoretical investigation of carbon + interstitials in silicon is presented. Calculations + using classical potentials are compared to + first-principles density-functional theory calculations + of the geometries, formation, and activation energies + of the carbon dumbbell interstitial, showing the + importance of a quantum-mechanical description of this + system. In contrast to previous studies, the present + first-principles calculations of the interstitial + carbon migration path yield an activation energy that + excellently matches the experiment. The bond-centered + interstitial configuration shows a net magnetization of + two electrons, illustrating the need for spin-polarized + calculations.", +} + +@Article{zirkelbach11, + journal = "Phys. Rev. B", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126", + publisher = "American Physical Society", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. K. N. Lindner and W. G. Schmidt and E. Rauls", + title = "Combined \textit{ab initio} and classical potential + simulation study on silicon carbide precipitation in + silicon", + year = "2011", + pages = "064126", + numpages = "18", + volume = "84", + doi = "10.1103/PhysRevB.84.064126", + issue = "6", + abstract = "Atomistic simulations on the silicon carbide + precipitation in bulk silicon employing both, classical + potential and first-principles methods are presented. + The calculations aim at a comprehensive, microscopic + understanding of the precipitation mechanism in the + context of controversial discussions in the literature. + For the quantum-mechanical treatment, basic processes + assumed in the precipitation process are calculated in + feasible systems of small size. The migration mechanism + of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1 + 1 0> self-interstitial in otherwise defect-free silicon + are investigated using density functional theory + calculations. The influence of a nearby vacancy, + another carbon interstitial and a substitutional defect + as well as a silicon self-interstitial has been + investigated systematically. Interactions of various + combinations of defects have been characterized + including a couple of selected migration pathways + within these configurations. Almost all of the + investigated pairs of defects tend to agglomerate + allowing for a reduction in strain. The formation of + structures involving strong carbon-carbon bonds turns + out to be very unlikely. In contrast, substitutional + carbon occurs in all probability. A long range capture + radius has been observed for pairs of interstitial + carbon as well as interstitial carbon and vacancies. A + rather small capture radius is predicted for + substitutional carbon and silicon self-interstitials. + Initial assumptions regarding the precipitation + mechanism of silicon carbide in bulk silicon are + established and conformability to experimental findings + is discussed. Furthermore, results of the accurate + first-principles calculations on defects and carbon + diffusion in silicon are compared to results of + classical potential simulations revealing significant + limitations of the latter method. An approach to work + around this problem is proposed. Finally, results of + the classical potential molecular dynamics simulations + of large systems are examined, which reinforce previous + assumptions and give further insight into basic + processes involved in the silicon carbide transition.", } @Article{lindner95, @@ -1338,21 +1598,20 @@ Rauschenbach and B. Stritzker", title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} Layers in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "354", number = "", pages = "171", year = "1994", doi = "10.1557/PROC-354-171", URL = "http://dx.doi.org/10.1557/PROC-354-171", - eprint = "http://journals.cambridge.org/article_S1946427400420853", notes = "first time ibs at moderate temperatures", } @Article{lindner96, title = "Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "46", number = "2-3", pages = "147--155", @@ -1370,8 +1629,7 @@ @Article{calcagno96, title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by ion implantation", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "120", number = "1-4", pages = "121--124", @@ -1389,7 +1647,7 @@ @Article{lindner98, title = "Mechanisms of Si{C} Formation in the Ion Beam Synthesis of 3{C}-Si{C} Layers in Silicon", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "215--218", year = "1998", @@ -1479,11 +1737,27 @@ notes = "c int diffusion barrier", } +@Article{haeberlen10, + title = "Structural characterization of cubic and hexagonal + Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si", + journal = "Journal of Crystal Growth", + volume = "312", + number = "6", + pages = "762--769", + year = "2010", + note = "", + ISSN = "0022-0248", + doi = "10.1016/j.jcrysgro.2009.12.048", + URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452", + author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J. + K. N. Lindner and B. Stritzker", +} + @Article{ito04, title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial growth", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "238", number = "1-4", pages = "159--164", @@ -1501,7 +1775,7 @@ title = "Organometallic vapor phase epitaxial growth of Ga{N} on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion implantation into Si(1 1 1) substrate", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "261", number = "2-3", pages = "266--270", @@ -1518,7 +1792,7 @@ @Article{liu_l02, title = "Substrates for gallium nitride epitaxy", - journal = "Materials Science and Engineering: R: Reports", + journal = "Mater. Sci. Eng., R", volume = "37", number = "3", pages = "61--127", @@ -1534,7 +1808,7 @@ @Article{takeuchi91, title = "Growth of single crystalline Ga{N} film on Si substrate using 3{C}-Si{C} as an intermediate layer", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "115", number = "1-4", pages = "634--638", @@ -1574,6 +1848,36 @@ doi = "10.1063/1.1730376", } +@Article{horsfield96, + title = "Bond-order potentials: Theory and implementation", + author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and + D. G. Pettifor and M. Aoki", + journal = "Phys. Rev. B", + volume = "53", + number = "19", + pages = "12694--12712", + numpages = "18", + year = "1996", + month = may, + doi = "10.1103/PhysRevB.53.12694", + publisher = "American Physical Society", +} + +@Article{abell85, + title = "Empirical chemical pseudopotential theory of molecular + and metallic bonding", + author = "G. C. Abell", + journal = "Phys. Rev. B", + volume = "31", + number = "10", + pages = "6184--6196", + numpages = "12", + year = "1985", + month = may, + doi = "10.1103/PhysRevB.31.6184", + publisher = "American Physical Society", +} + @Article{tersoff_si1, title = "New empirical model for the structural properties of silicon", @@ -1589,6 +1893,21 @@ publisher = "American Physical Society", } +@Article{dodson87, + title = "Development of a many-body Tersoff-type potential for + silicon", + author = "Brian W. Dodson", + journal = "Phys. Rev. B", + volume = "35", + number = "6", + pages = "2795--2798", + numpages = "3", + year = "1987", + month = feb, + doi = "10.1103/PhysRevB.35.2795", + publisher = "American Physical Society", +} + @Article{tersoff_si2, title = "New empirical approach for the structure and energy of covalent systems", @@ -1694,7 +2013,7 @@ @Article{davis91, author = "R. F. Davis and G. Kelner and M. Shur and J. W. Palmour and J. A. Edmond", - journal = "Proceedings of the IEEE", + journal = "Proc. IEEE", title = "Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide", @@ -1766,7 +2085,7 @@ @Article{sarro00, title = "Silicon carbide as a new {MEMS} technology", - journal = "Sensors and Actuators A: Physical", + journal = "Seonsor. Actuator. A", volume = "82", number = "1-3", pages = "210--218", @@ -1785,7 +2104,7 @@ title = "Status of silicon carbide (Si{C}) as a wide-bandgap semiconductor for high-temperature applications: {A} review", - journal = "Solid-State Electronics", + journal = "Solid-State Electron.", volume = "39", number = "10", pages = "1409--1422", @@ -1800,7 +2119,7 @@ @Article{giancarli98, title = "Design requirements for Si{C}/Si{C} composites structural material in fusion power reactor blankets", - journal = "Fusion Engineering and Design", + journal = "Fusion Eng. Des.", volume = "41", number = "1-4", pages = "165--171", @@ -1814,7 +2133,7 @@ @Article{pensl93, title = "Electrical and optical characterization of Si{C}", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "185", number = "1-4", pages = "264--283", @@ -1843,7 +2162,7 @@ @Article{tairov81, title = "General principles of growing large-size single crystals of various silicon carbide polytypes", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "52", number = "Part 1", pages = "146--150", @@ -1857,7 +2176,7 @@ @Article{barrett91, title = "Si{C} boule growth by sublimation vapor transport", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "109", number = "1-4", pages = "17--23", @@ -1872,7 +2191,7 @@ @Article{barrett93, title = "Growth of large Si{C} single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "128", number = "1-4", pages = "358--362", @@ -1890,7 +2209,7 @@ title = "Control of polytype formation by surface energy effects during the growth of Si{C} monocrystals by the sublimation method", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "131", number = "1-2", pages = "71--74", @@ -1922,6 +2241,22 @@ notes = "cvd of 3c-sic on si, sic buffer layer", } +@Article{nagasawa06, + author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta", + title = "Reducing Planar Defects in 3{C}¿Si{C}", + journal = "Chemical Vapor Deposition", + volume = "12", + number = "8-9", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3862", + URL = "http://dx.doi.org/10.1002/cvde.200506466", + doi = "10.1002/cvde.200506466", + pages = "502--508", + keywords = "Defect structures, Epitaxy, Silicon carbide", + year = "2006", + notes = "cvd on si", +} + @Article{nishino87, author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono and Hiroyuki Matsunami", @@ -1947,7 +2282,7 @@ Single-Crystal Films on Si", publisher = "ECS", year = "1987", - journal = "Journal of The Electrochemical Society", + journal = "J. Electrochem. Soc.", volume = "134", number = "6", pages = "1558--1565", @@ -1966,7 +2301,7 @@ off-axis Si substrates", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "11", pages = "823--825", @@ -1982,7 +2317,7 @@ @Article{ueda90, title = "Crystal growth of Si{C} by step-controlled epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "104", number = "3", pages = "695--700", @@ -2024,7 +2359,7 @@ vicinal (0001) 6{H}-Si{C} wafers", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "15", pages = "1442--1444", @@ -2045,7 +2380,7 @@ substrates", publisher = "AIP", year = "1988", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "64", number = "5", pages = "2672--2679", @@ -2089,7 +2424,7 @@ substrates", publisher = "AIP", year = "1988", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "63", number = "8", pages = "2645--2650", @@ -2111,7 +2446,7 @@ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", publisher = "AIP", year = "1991", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "59", number = "3", pages = "333--335", @@ -2146,7 +2481,7 @@ @Article{kaneda87, title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric properties of its p-n junction", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "81", number = "1-4", pages = "536--542", @@ -2204,7 +2539,7 @@ level using surface superstructures", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "9", pages = "1204--1206", @@ -2256,7 +2591,7 @@ by ion implantation", publisher = "Taylor \& Francis", year = "1976", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "29", number = "1", pages = "13--15", @@ -2272,7 +2607,7 @@ by high doses of 70 and 310 ke{V} carbon ions", publisher = "Taylor \& Francis", year = "1980", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "48", number = "1", pages = "7", @@ -2321,13 +2656,13 @@ compounds formed in silicon by ion beam synthesis", publisher = "Taylor \& Francis", year = "1986", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "99", number = "1", pages = "71--81", URL = "http://www.informaworld.com/10.1080/00337578608209614", - notes = "ibs, comparison with sio and sin, higher temp or - time", + notes = "ibs, comparison with sio and sin, higher temp or time, + no c redistribution", } @Article{reeson87, @@ -2356,7 +2691,7 @@ title = "High-temperature ion beam synthesis of cubic Si{C}", publisher = "AIP", year = "1990", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "67", number = "6", pages = "2908--2912", @@ -2395,7 +2730,7 @@ Netherlands", title = "Boron implantations in silicon: {A} comparison of charge carrier and boron concentration profiles", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A", publisher = "Springer Berlin / Heidelberg", ISSN = "0947-8396", keyword = "Physics and Astronomy", @@ -2416,7 +2751,7 @@ implanted boron into silicon", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "50", number = "7", pages = "416--418", @@ -2437,7 +2772,7 @@ profiles", publisher = "AIP", year = "1990", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "68", number = "12", pages = "6191--6198", @@ -2548,7 +2883,7 @@ author = "E Kasper", title = "Superlattices of group {IV} elements, a new possibility to produce direct band gap material", - journal = "Physica Scripta", + journal = "Phys. Scr.", volume = "T35", pages = "232--236", URL = "http://stacks.iop.org/1402-4896/T35/232", @@ -2557,7 +2892,28 @@ quasi-direct one", } -@Conference{powell93, +@Article{eberl92, + author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang + and F. K. LeGoues", + collaboration = "", + title = "Growth and strain compensation effects in the ternary + Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "24", + pages = "3033--3035", + keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS; + TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM + EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL + STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE + STUDIES", + URL = "http://link.aip.org/link/?APL/60/3033/1", + doi = "10.1063/1.106774", +} + +@Article{powell93, author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A. Ek and S. S. Iyer", collaboration = "", @@ -2579,6 +2935,93 @@ notes = "substitutional c in si by mbe", } +@Article{powell93_2, + title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties + of the ternary system", + journal = "J. Cryst. Growth", + volume = "127", + number = "1-4", + pages = "425--429", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90653-E", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e", + author = "A. R. Powell and K. Eberl and B. A. Ek and S. S. + Iyer", +} + +@Article{osten94, + author = "H. J. Osten", + title = "Modification of Growth Modes in Lattice-Mismatched + Epitaxial Systems: Si/Ge", + journal = "phys. status solidi (a)", + volume = "145", + number = "2", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-396X", + URL = "http://dx.doi.org/10.1002/pssa.2211450203", + doi = "10.1002/pssa.2211450203", + pages = "235--245", + year = "1994", +} + +@Article{dietrich94, + title = "Lattice distortion in a strain-compensated + $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon", + author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M. + Methfessel and P. Zaumseil", + journal = "Phys. Rev. B", + volume = "49", + number = "24", + pages = "17185--17190", + numpages = "5", + year = "1994", + month = jun, + doi = "10.1103/PhysRevB.49.17185", + publisher = "American Physical Society", +} + +@Article{osten94_2, + author = "H. J. Osten and E. Bugiel and P. Zaumseil", + collaboration = "", + title = "Growth of an inverse tetragonal distorted SiGe layer + on Si(001) by adding small amounts of carbon", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "64", + number = "25", + pages = "3440--3442", + keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON + ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM; + XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL + LATTICES", + URL = "http://link.aip.org/link/?APL/64/3440/1", + doi = "10.1063/1.111235", + notes = "inversely strained / distorted heterostructure", +} + +@Article{iyer92, + author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K. + LeGoues and J. C. Tsang and F. Cardone", + collaboration = "", + title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by + molecular beam epitaxy", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "3", + pages = "356--358", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM + EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS; + FILM GROWTH; MICROSTRUCTURE", + URL = "http://link.aip.org/link/?APL/60/356/1", + doi = "10.1063/1.106655", +} + @Article{osten99, author = "H. J. Osten and J. Griesche and S. Scalese", collaboration = "", @@ -2599,6 +3042,20 @@ notes = "substitutional c in si by mbe", } +@Article{born27, + author = "M. Born and R. Oppenheimer", + title = "Zur Quantentheorie der Molekeln", + journal = "Ann. Phys. (Leipzig)", + volume = "389", + number = "20", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19273892002", + doi = "10.1002/andp.19273892002", + pages = "457--484", + year = "1927", +} + @Article{hohenberg64, title = "Inhomogeneous Electron Gas", author = "P. Hohenberg and W. Kohn", @@ -2614,6 +3071,51 @@ notes = "density functional theory, dft", } +@Article{thomas27, + title = "The calculation of atomic fields", + author = "L. H. Thomas", + journal = "Proc. Cambridge Philos. Soc.", + volume = "23", + pages = "542--548", + year = "1927", + doi = "10.1017/S0305004100011683", +} + +@Article{fermi27, + title = "", + author = "E. Fermi", + journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat. + Rend.", + volume = "6", + pages = "602", + year = "1927", +} + +@Article{hartree28, + title = "The Wave Mechanics of an Atom with a Non-Coulomb + Central Field. Part {I}. Theory and Methods", + author = "D. R. Hartree", + journal = "Proc. Cambridge Philos. Soc.", + volume = "24", + pages = "89--110", + year = "1928", + doi = "10.1017/S0305004100011919", +} + +@Article{slater29, + title = "The Theory of Complex Spectra", + author = "J. C. Slater", + journal = "Phys. Rev.", + volume = "34", + number = "10", + pages = "1293--1322", + numpages = "29", + year = "1929", + month = nov, + doi = "10.1103/PhysRev.34.1293", + publisher = "American Physical Society", +} + @Article{kohn65, title = "Self-Consistent Equations Including Exchange and Correlation Effects", @@ -2630,40 +3132,115 @@ notes = "dft, exchange and correlation", } -@Article{ruecker94, - title = "Strain-stabilized highly concentrated pseudomorphic - $Si1-x$$Cx$ layers in Si", - author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H. - J. Osten", +@Article{kohn96, + title = "Density Functional and Density Matrix Method Scaling + Linearly with the Number of Atoms", + author = "W. Kohn", journal = "Phys. Rev. Lett.", - volume = "72", - number = "22", - pages = "3578--3581", + volume = "76", + number = "17", + pages = "3168--3171", numpages = "3", - year = "1994", - month = may, - doi = "10.1103/PhysRevLett.72.3578", + year = "1996", + month = apr, + doi = "10.1103/PhysRevLett.76.3168", publisher = "American Physical Society", - notes = "high c concentration in si, heterostructure, strained - si, dft", } -@Article{yagi02, - title = "Phosphorous Doping of Strain-Induced - Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\ - by Low-Temperature Chemical Vapor Deposition", - author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and - Yuichi Yoneyama and Akira Yamada and Makoto Konagai", - journal = "Japanese Journal of Applied Physics", - volume = "41", - number = "Part 1, No. 4B", - pages = "2472--2475", +@Article{kohn98, + title = "Edge Electron Gas", + author = "Walter Kohn and Ann E. Mattsson", + journal = "Phys. Rev. Lett.", + volume = "81", + number = "16", + pages = "3487--3490", numpages = "3", - year = "2002", - URL = "http://jjap.jsap.jp/link?JJAP/41/2472/", - doi = "10.1143/JJAP.41.2472", - publisher = "The Japan Society of Applied Physics", - notes = "experimental charge carrier mobility in strained si", + year = "1998", + month = oct, + doi = "10.1103/PhysRevLett.81.3487", + publisher = "American Physical Society", +} + +@Article{kohn99, + title = "Nobel Lecture: Electronic structure of matter---wave + functions and density functionals", + author = "W. Kohn", + journal = "Rev. Mod. Phys.", + volume = "71", + number = "5", + pages = "1253--1266", + numpages = "13", + year = "1999", + month = oct, + doi = "10.1103/RevModPhys.71.1253", + publisher = "American Physical Society", +} + +@Article{payne92, + title = "Iterative minimization techniques for ab initio + total-energy calculations: molecular dynamics and + conjugate gradients", + author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A. + Arias and J. D. Joannopoulos", + journal = "Rev. Mod. Phys.", + volume = "64", + number = "4", + pages = "1045--1097", + numpages = "52", + year = "1992", + month = oct, + doi = "10.1103/RevModPhys.64.1045", + publisher = "American Physical Society", +} + +@Article{levy82, + title = "Electron densities in search of Hamiltonians", + author = "Mel Levy", + journal = "Phys. Rev. A", + volume = "26", + number = "3", + pages = "1200--1208", + numpages = "8", + year = "1982", + month = sep, + doi = "10.1103/PhysRevA.26.1200", + publisher = "American Physical Society", +} + +@Article{ruecker94, + title = "Strain-stabilized highly concentrated pseudomorphic + $Si1-x$$Cx$ layers in Si", + author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H. + J. Osten", + journal = "Phys. Rev. Lett.", + volume = "72", + number = "22", + pages = "3578--3581", + numpages = "3", + year = "1994", + month = may, + doi = "10.1103/PhysRevLett.72.3578", + publisher = "American Physical Society", + notes = "high c concentration in si, heterostructure, strained + si, dft", +} + +@Article{yagi02, + title = "Phosphorous Doping of Strain-Induced + Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\ + by Low-Temperature Chemical Vapor Deposition", + author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and + Yuichi Yoneyama and Akira Yamada and Makoto Konagai", + journal = "Japanese J. Appl. Phys.", + volume = "41", + number = "Part 1, No. 4B", + pages = "2472--2475", + numpages = "3", + year = "2002", + URL = "http://jjap.jsap.jp/link?JJAP/41/2472/", + doi = "10.1143/JJAP.41.2472", + publisher = "The Japan Society of Applied Physics", + notes = "experimental charge carrier mobility in strained si", } @Article{chang05, @@ -2682,6 +3259,48 @@ notes = "enhance of electron mobility in strained si", } +@Article{kissinger94, + author = "W. Kissinger and M. Weidner and H. J. Osten and M. + Eichler", + collaboration = "", + title = "Optical transitions in strained Si[sub 1 - y]{C}[sub + y] layers on Si(001)", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "65", + number = "26", + pages = "3356--3358", + keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS; + CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION + SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE; + ENERGY LEVELS; ENERGYLEVEL TRANSITIONS", + URL = "http://link.aip.org/link/?APL/65/3356/1", + doi = "10.1063/1.112390", + notes = "strained si influence on optical properties", +} + +@Article{osten96, + author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P. + Zaumseil", + collaboration = "", + title = "Substitutional versus interstitial carbon + incorporation during pseudomorphic growth of Si[sub 1 - + y]{C}[sub y] on Si(001)", + publisher = "AIP", + year = "1996", + journal = "J. Appl. Phys.", + volume = "80", + number = "12", + pages = "6711--6715", + keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH; + MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION; + XRD; STRAINS", + URL = "http://link.aip.org/link/?JAP/80/6711/1", + doi = "10.1063/1.363797", + notes = "mbe substitutional vs interstitial c incorporation", +} + @Article{osten97, author = "H. J. Osten and P. Gaworzewski", collaboration = "", @@ -2862,7 +3481,7 @@ } @Article{parcas_md, - title = "{PARCAS} molecular dynamics code", + journal = "{PARCAS} molecular dynamics code", author = "K. Nordlund", year = "2008", } @@ -3022,7 +3641,7 @@ @Article{chaussende07, author = "D. Chaussende and P. J. Wellmann and M. Pons", title = "Status of Si{C} bulk growth processes", - journal = "Journal of Physics D: Applied Physics", + journal = "J. Phys. D", volume = "40", number = "20", pages = "6150", @@ -3134,7 +3753,7 @@ Heteroepitaxial Growth", publisher = "WILEY-VCH Verlag", year = "1997", - journal = "physica status solidi (b)", + journal = "phys. status solidi (b)", volume = "202", pages = "405--420", URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", @@ -3218,7 +3837,7 @@ @Article{hornstra58, title = "Dislocations in the diamond lattice", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "5", number = "1-2", pages = "129--141", @@ -3420,7 +4039,22 @@ notes = "paw method", } -@Article{hamann79, +@InCollection{cohen70, + title = "The Fitting of Pseudopotentials to Experimental Data + and Their Subsequent Application", + editor = "Frederick Seitz Henry Ehrenreich and David Turnbull", + publisher = "Academic Press", + year = "1970", + volume = "24", + pages = "37--248", + series = "Solid State Physics", + ISSN = "0081-1947", + doi = "DOI: 10.1016/S0081-1947(08)60070-3", + URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3", + author = "Marvin L. Cohen and Volker Heine", +} + +%@Article{hamann79, title = "Norm-Conserving Pseudopotentials", author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang", journal = "Phys. Rev. Lett.", @@ -3435,6 +4069,35 @@ notes = "norm-conserving pseudopotentials", } +@Article{kleinman82, + journal = "Phys. Rev. Lett.", + month = may, + doi = "10.1103/PhysRevLett.48.1425", + issue = "20", + author = "Leonard Kleinman and D. M. Bylander", + title = "Efficacious Form for Model Pseudopotentials", + year = "1982", + URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425", + publisher = "American Physical Society", + pages = "1425--1428", + volume = "48", +} + +@Article{troullier91, + title = "Efficient pseudopotentials for plane-wave + calculations", + author = "N. Troullier and Jos\'e Luriaas Martins", + journal = "Phys. Rev. B", + volume = "43", + number = "3", + pages = "1993--2006", + numpages = "13", + year = "1991", + month = jan, + doi = "10.1103/PhysRevB.43.1993", + publisher = "American Physical Society", +} + @Article{vanderbilt90, title = "Soft self-consistent pseudopotentials in a generalized eigenvalue formalism", @@ -3451,6 +4114,36 @@ notes = "vasp pseudopotentials", } +@Article{ceperley80, + title = "Ground State of the Electron Gas by a Stochastic + Method", + author = "D. M. Ceperley and B. J. Alder", + journal = "Phys. Rev. Lett.", + volume = "45", + number = "7", + pages = "566--569", + numpages = "3", + year = "1980", + month = aug, + doi = "10.1103/PhysRevLett.45.566", + publisher = "American Physical Society", +} + +@Article{perdew81, + title = "Self-interaction correction to density-functional + approximations for many-electron systems", + author = "J. P. Perdew and Alex Zunger", + journal = "Phys. Rev. B", + volume = "23", + number = "10", + pages = "5048--5079", + numpages = "31", + year = "1981", + month = may, + doi = "10.1103/PhysRevB.23.5048", + publisher = "American Physical Society", +} + @Article{perdew86, title = "Accurate and simple density functional for the electronic exchange energy: Generalized gradient @@ -3471,7 +4164,7 @@ @Article{perdew02, title = "Generalized gradient approximations for exchange and correlation: {A} look backward and forward", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "172", number = "1-2", pages = "1--6", @@ -3503,6 +4196,20 @@ notes = "gga pw91 (as in vasp)", } +@Article{chadi73, + title = "Special Points in the Brillouin Zone", + author = "D. J. Chadi and Marvin L. Cohen", + journal = "Phys. Rev. B", + volume = "8", + number = "12", + pages = "5747--5753", + numpages = "6", + year = "1973", + month = dec, + doi = "10.1103/PhysRevB.8.5747", + publisher = "American Physical Society", +} + @Article{baldereschi73, title = "Mean-Value Point in the Brillouin Zone", author = "A. Baldereschi", @@ -3518,6 +4225,20 @@ notes = "mean value k point", } +@Article{monkhorst76, + title = "Special points for Brillouin-zone integrations", + author = "Hendrik J. Monkhorst and James D. Pack", + journal = "Phys. Rev. B", + volume = "13", + number = "12", + pages = "5188--5192", + numpages = "4", + year = "1976", + month = jun, + doi = "10.1103/PhysRevB.13.5188", + publisher = "American Physical Society", +} + @Article{zhu98, title = "Ab initio pseudopotential calculations of dopant diffusion in Si", @@ -3596,6 +4317,22 @@ si", } +@Article{jones89, + doi = "10.1103/RevModPhys.61.689", + month = jul, + issue = "3", + author = "R. O. Jones and O. Gunnarsson", + year = "1989", + URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689", + publisher = "American Physical Society", + title = "The density functional formalism, its applications and + prospects", + pages = "689--746", + journal = "Rev. Mod. Phys.", + volume = "61", + notes = "dft intro", +} + @Article{park02, author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. T Soares and Y.-W. Kim and H. Kim and P. Desjardins and @@ -3796,7 +4533,7 @@ @Article{losev28, title = "Luminous carborundum detector and detection effect and oscillations with crystals", - journal = "Philosophical Magazine Series 7", + journal = "Philos. Mag. Series 7", volume = "6", number = "39", pages = "1024--1044", @@ -3856,7 +4593,7 @@ title = "Growth and Properties of beta-Si{C} Single Crystals", publisher = "AIP", year = "1966", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "37", number = "1", pages = "333--336", @@ -3894,7 +4631,7 @@ title = "Electronic Conduction in Silicon Carbide", publisher = "AIP", year = "1953", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "21", number = "5", pages = "821--827", @@ -3929,7 +4666,7 @@ improved external quantum efficiency", publisher = "AIP", year = "1982", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "53", number = "10", pages = "6962--6967", @@ -3950,7 +4687,7 @@ Road 44135 Cleveland OH", title = "Progress in silicon carbide semiconductor electronics technology", - journal = "Journal of Electronic Materials", + journal = "J. Electron. Mater.", publisher = "Springer Boston", ISSN = "0361-5235", keyword = "Chemistry and Materials Science", @@ -3963,9 +4700,60 @@ notes = "sic data, advantages of 3c sic", } +@InProceedings{pribble02, + author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and + R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring + and J. J. Sumakeris and A. W. Saxler and J. W. + Milligan", + booktitle = "2002 IEEE MTT-S International Microwave Symposium + Digest", + title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in + power amplifier design", + year = "2002", + month = "", + volume = "", + number = "", + pages = "1819--1822", + doi = "10.1109/MWSYM.2002.1012216", + ISSN = "", + notes = "hdtv", +} + +@InProceedings{temcamani01, + author = "F. Temcamani and P. Pouvil and O. Noblanc and C. + Brylinski and P. Bannelier and B. Darges and J. P. + Prigent", + booktitle = "2001 IEEE MTT-S International Microwave Symposium + Digest", + title = "Silicon carbide {MESFET}s performances and application + in broadcast power amplifiers", + year = "2001", + month = "", + volume = "", + number = "", + pages = "641--644", + doi = "10.1109/MWSYM.2001.966976", + ISSN = "", + notes = "hdtv", +} + +@Article{pensl00, + author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu + and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu + Kimoto and Hiroyuki Matsunami", + title = "Traps at the Si{C}/Si{O2}-Interface", + journal = "MRS Proc.", + volume = "640", + number = "", + pages = "", + year = "2000", + doi = "10.1557/PROC-640-H3.2", + URL = "http://dx.doi.org/10.1557/PROC-640-H3.2", +} + @Article{bhatnagar93, author = "M. Bhatnagar and B. J. Baliga", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power devices", year = "1993", @@ -3986,10 +4774,84 @@ notes = "comparison 3c 6h sic and si devices", } +@Article{ryu01, + author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W. + Palmour", + journal = "IEEE Electron Device Lett.", + title = "1800 {V} {NPN} bipolar junction transistors in + 4{H}-Si{C}", + year = "2001", + month = mar, + volume = "22", + number = "3", + pages = "124--126", + keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction + transistor;SiC;blocking voltage;current gain;deep level + acceptor;minority carrier lifetime;on-resistance;power + switching device;temperature coefficient;carrier + lifetime;deep levels;minority carriers;power bipolar + transistors;silicon compounds;wide band gap + semiconductors;", + doi = "10.1109/55.910617", + ISSN = "0741-3106", +} + +@Article{baliga96, + author = "B. J. Baliga", + journal = "IEEE Trans. Electron Devices", + title = "Trends in power semiconductor devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1717--1731", + keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated + devices;MOS-gated thyristors;MPS rectifier;PIN + rectifier;Schottky rectifier;Si;SiC;SiC based + switches;TMBS rectifier;UMOS technology;VMOS + technology;bipolar power transistor;high voltage power + rectifiers;low voltage power rectifiers;power + MOSFET;power losses;power semiconductor devices;power + switch technology;review;semiconductor device + technology;MOS-controlled thyristors;bipolar transistor + switches;field effect transistor switches;gallium + arsenide;insulated gate bipolar transistors;p-i-n + diodes;power bipolar transistors;power field effect + transistors;power semiconductor devices;power + semiconductor diodes;power semiconductor + switches;reviews;silicon;silicon compounds;solid-state + rectifiers;thyristors;", + doi = "10.1109/16.536818", + ISSN = "0018-9383", +} + +@Article{bhatnagar92, + author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga", + journal = "IEEE Electron Device Lett.", + title = "Silicon-carbide high-voltage (400 {V}) Schottky + barrier diodes", + year = "1992", + month = oct, + volume = "13", + number = "10", + pages = "501--503", + keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier + diodes;breakdown + voltages;characteristics;fabrication;forward I-V + characteristics;forward voltage drop;on-state current + density;rectifiers;reverse I-V characteristics;reverse + recovery characteristics;sharp breakdown;temperature + range;Schottky-barrier diodes;platinum;power + electronics;semiconductor materials;silicon + compounds;solid-state rectifiers;", + doi = "10.1109/55.192814", + ISSN = "0741-3106", +} + @Article{neudeck94, author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. A. Powell and C. S. Salupo and L. G. Matus", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Electrical properties of epitaxial 3{C}- and 6{H}-Si{C} p-n junction diodes produced side-by-side on 6{H}-Si{C} substrates", @@ -4016,6 +4878,98 @@ substrate", } +@Article{weitzel96, + author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.} + and K. Moore and K. K. Nordquist and S. Allen and C. + Thero and M. Bhatnagar", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide high-power devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1732--1741", + keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky + barrier diodes;SiC;SiC devices;UMOSFET;current + density;high electric breakdown field;high saturated + electron drift velocity;high thermal + conductivity;high-power devices;packaged SIT;submicron + gate length MESFET;Schottky diodes;current + density;electric breakdown;power MESFET;power + MOSFET;power semiconductor devices;power semiconductor + diodes;reviews;silicon compounds;static induction + transistors;wide band gap semiconductors;", + doi = "10.1109/16.536819", + ISSN = "0018-9383", + notes = "high power devices", +} + +@Article{zhu08, + author = "Lin Zhu and T. P. Chow", + journal = "IEEE Trans. Electron Devices", + title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers", + year = "2008", + month = aug, + volume = "55", + number = "8", + pages = "1871--1874", + keywords = "H-SiC;OFF-state characteristics;ON-state + characteristics;blocking capability;high-voltage + Schottky rectifier;junction barrier Schottky + rectifier;lateral channel JBS rectifier;leakage + current;pinlike reverse characteristics;Schottky + barriers;Schottky diodes;leakage currents;rectifying + circuits;", + doi = "10.1109/TED.2008.926642", + ISSN = "0018-9383", +} + +@Article{brown93, + author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W. + Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond + and G. Gati and J. M. Pimbley and W. E. Schneider", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide {UV} photodiodes", + year = "1993", + month = feb, + volume = "40", + number = "2", + pages = "325--333", + keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV + responsivity characteristics;low dark current;low light + level UV detection;quantum + efficiency;reproducibility;reverse current + leakage;short circuit output current;leakage + currents;photodiodes;semiconductor + materials;short-circuit currents;silicon + compounds;ultraviolet detectors;", + doi = "10.1109/16.182509", + ISSN = "0018-9383", + notes = "sic photo diodes, uv detector", +} + +@Article{yan04, + author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao + and D. Franz and J. H. Zhao and M. Weiner", + journal = "IEEE J. Quantum Electron.", + title = "4{H}-Si{C} {UV} photo detectors with large area and + very high specific detectivity", + year = "2004", + month = sep, + volume = "40", + number = "9", + pages = "1315--1320", + keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV + photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes; + SiC-Pt; leakage current; photoresponse spectra; quantum + efficiency; specific detectivity; Schottky diodes; + photodetectors; platinum; silicon compounds; wide band + gap semiconductors;", + doi = "10.1109/JQE.2004.833196", + ISSN = "0018-9197", + notes = "uv detector", +} + @Article{schulze98, author = "N. Schulze and D. L. Barrett and G. Pensl", collaboration = "", @@ -4023,7 +4977,7 @@ single crystals by physical vapor transport", publisher = "AIP", year = "1998", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "72", number = "13", pages = "1632--1634", @@ -4035,13 +4989,63 @@ notes = "micropipe free 6h-sic pvt growth", } +@Article{frank51, + author = "F. C. Frank", + title = "Capillary equilibria of dislocated crystals", + journal = "Acta Crystallogr.", + year = "1951", + volume = "4", + number = "6", + pages = "497--501", + month = nov, + doi = "10.1107/S0365110X51001690", + URL = "http://dx.doi.org/10.1107/S0365110X51001690", + notes = "micropipe", +} + +@Article{heindl97, + author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G. + Pensl", + title = "Micropipes: Hollow Tubes in Silicon Carbide", + journal = "phys. status solidi (a)", + volume = "162", + number = "1", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-396X", + URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7", + doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7", + pages = "251--262", + year = "1997", + notes = "micropipe", +} + +@Article{neudeck94_2, + author = "P. G. Neudeck and J. A. Powell", + journal = "IEEE Electron Device Lett.", + title = "Performance limiting micropipe defects in silicon + carbide wafers", + year = "1994", + month = feb, + volume = "15", + number = "2", + pages = "63--65", + keywords = "SiC;defect density;device ratings;epitaxially-grown pn + junction devices;micropipe defects;power devices;power + semiconductors;pre-avalanche reverse-bias point + failures;p-n homojunctions;power + electronics;semiconductor materials;silicon + compounds;", + doi = "10.1109/55.285372", + ISSN = "0741-3106", +} + @Article{pirouz87, author = "P. Pirouz and C. M. Chorey and J. A. Powell", collaboration = "", title = "Antiphase boundaries in epitaxially grown beta-Si{C}", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "50", number = "4", pages = "221--223", @@ -4058,7 +5062,7 @@ @Article{shibahara86, title = "Surface morphology of cubic Si{C}(100) grown on Si(100) by chemical vapor deposition", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "78", number = "3", pages = "538--544", @@ -4078,7 +5082,7 @@ title = "Step-flow epitaxial growth on two-domain surfaces", publisher = "AIP", year = "1996", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "79", number = "3", pages = "1423--1434", @@ -4096,7 +5100,7 @@ carbonization of silicon", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "3", pages = "2070--2073", @@ -4111,7 +5115,7 @@ @Article{fuyuki89, title = "Atomic layer epitaxy of cubic Si{C} by gas source {MBE} using surface superstructure", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "95", number = "1-4", pages = "461--463", @@ -4134,7 +5138,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "7", pages = "824--826", @@ -4149,7 +5153,7 @@ @Article{yoshinobu90, title = "Atomic level control in gas source {MBE} growth of cubic Si{C}", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "99", number = "1-4", pages = "520--524", @@ -4207,7 +5211,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "65", number = "22", pages = "2851--2853", @@ -4226,7 +5230,7 @@ 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", publisher = "WILEY-VCH Verlag", year = "1997", - journal = "physica status solidi (b)", + journal = "phys. status solidi (b)", volume = "202", pages = "359--378", notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower @@ -4235,7 +5239,7 @@ @Article{takaoka98, title = "Initial stage of Si{C} growth on Si(1 0 0) surface", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "183", number = "1-2", pages = "175--182", @@ -4257,7 +5261,7 @@ title = "Low-temperature heteroepitaxial growth of cubic Si{C} on Si using hydrocarbon radicals by gas source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "150", number = "Part 2", pages = "934--938", @@ -4274,7 +5278,7 @@ author = "Volker Heine and Ching Cheng and Richard J. Needs", title = "The Preference of Silicon Carbide for Growth in the Metastable Cubic Form", - journal = "Journal of the American Ceramic Society", + journal = "J. Am. Ceram. Soc.", volume = "74", number = "10", publisher = "Blackwell Publishing Ltd", @@ -4292,7 +5296,7 @@ @Article{allendorf91, title = "The adsorption of {H}-atoms on polycrystalline [beta]-silicon carbide", - journal = "Surface Science", + journal = "Surf. Sci.", volume = "258", number = "1-3", pages = "177--189", @@ -4312,7 +5316,7 @@ title = "Effect of {H} on Si molecular-beam epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "11", pages = "6615--6618", @@ -4328,7 +5332,7 @@ @Article{newman85, author = "Ronald C. Newman", title = "Carbon in Crystalline Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "403", @@ -4340,7 +5344,7 @@ @Article{newman61, title = "The diffusivity of carbon in silicon", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "19", number = "3-4", pages = "230--234", @@ -4356,7 +5360,7 @@ @Article{goesele85, author = "U. Gösele", title = "The Role of Carbon and Point Defects in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "419", @@ -4366,6 +5370,21 @@ eprint = "http://journals.cambridge.org/article_S1946427400543681", } +@Article{mukashev82, + title = "Defects in Carbon-Implanted Silicon", + author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru + Fukuoka and Haruo Saito", + journal = "Japanese J. Appl. Phys.", + volume = "21", + number = "Part 1, No. 2", + pages = "399--400", + numpages = "1", + year = "1982", + URL = "http://jjap.jsap.jp/link?JJAP/21/399/", + doi = "10.1143/JJAP.21.399", + publisher = "The Japan Society of Applied Physics", +} + @Article{puska98, title = "Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon", @@ -4393,7 +5412,7 @@ high-dose carbon ion implantation in silicon", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "77", number = "7", pages = "2978--2984", @@ -4404,3 +5423,820 @@ URL = "http://link.aip.org/link/?JAP/77/2978/1", doi = "10.1063/1.358714", } + +@Article{romano-rodriguez96, + title = "Detailed analysis of [beta]-Si{C} formation by high + dose carbon ion implantation in silicon", + journal = "Materials Science and Engineering B", + volume = "36", + number = "1-3", + pages = "282--285", + year = "1996", + note = "European Materials Research Society 1995 Spring + Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and + Oxygen in Silicon and in Other Elemental + Semiconductors", + ISSN = "0921-5107", + doi = "DOI: 10.1016/0921-5107(95)01283-4", + URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408", + author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio + and A. Pérez-Rodríguez and J. R. Morante and R. Kögler + and W. Skorupa", + keywords = "Silicon", + keywords = "Ion implantation", + notes = "incoherent 3c-sic precipitate", +} + +@Article{davidson75, + title = "The iterative calculation of a few of the lowest + eigenvalues and corresponding eigenvectors of large + real-symmetric matrices", + journal = "J. Comput. Phys.", + volume = "17", + number = "1", + pages = "87--94", + year = "1975", + note = "", + ISSN = "0021-9991", + doi = "DOI: 10.1016/0021-9991(75)90065-0", + URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650", + author = "Ernest R. Davidson", +} + +@Book{adorno_mm, + title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten + Leben", + author = "T. W. Adorno", + ISBN = "978-3-518-01236-9", + URL = "http://books.google.com/books?id=coZqRAAACAAJ", + year = "1994", + publisher = "Suhrkamp", +} + +@Misc{attenberger03, + author = "Wilfried Attenberger and Jörg Lindner and Bernd + Stritzker", + title = "A {method} {for} {forming} {a} {layered} + {semiconductor} {structure} {and} {corresponding} + {structure}", + year = "2003", + month = apr, + day = "24", + note = "WO 2003/034484 A3R4", + version = "A3R4", + howpublished = "Patent Application", + nationality = "WO", + filing_num = "EP0211423", + yearfiled = "2002", + monthfiled = "10", + dayfiled = "11", + pat_refs = "", + ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L + 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L + 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B", + us_class = "", + abstract = "The following invention provides a method for forming + a layered semiconductor structure having a layer (5) of + a first semiconductor material on a substrate (1; 1') + of at least one second semiconductor material, + comprising the steps of: providing said substrate (1; + 1'); burying said layer (5) of said first semiconductor + material in said substrate (1; 1'), said buried layer + (5) having an upper surface (105) and a lower surface + (105) and dividing said substrate (1; 1') into an upper + part (1a) and a lower part (1b; 1b', 1c); creating a + buried damage layer (10; 10'; 10'', 100'') which at + least partly adjoins and/or at least partly includes + said upper surface (105) of said buried layer (5); and + removing said upper part (1a) of said substrate (1; 1') + and said buried damage layer (10; 10'; 10'', 100'') for + exposing said buried layer (5). The invention also + provides a corresponding layered semiconductor + structure.", +} + +@Article{zunger01, + author = "Alex Zunger", + title = "Pseudopotential Theory of Semiconductor Quantum Dots", + journal = "physica status solidi (b)", + volume = "224", + number = "3", + publisher = "WILEY-VCH Verlag Berlin GmbH", + ISSN = "1521-3951", + URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + pages = "727--734", + keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11, + S8.12", + year = "2001", + notes = "configuration-interaction method, ci", +} + +@Article{robertson90, + author = "I. J. Robertson and M. C. Payne", + title = "k-point sampling and the k.p method in pseudopotential + total energy calculations", + journal = "Journal of Physics: Condensed Matter", + volume = "2", + number = "49", + pages = "9837", + URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010", + year = "1990", + notes = "kp method", +} + +@Article{lange11, + volume = "84", + journal = "Phys. Rev. B", + author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg + Neugebauer", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101", + doi = "10.1103/PhysRevB.84.085101", + year = "2011", + title = "Construction and performance of fully numerical + optimum atomic basis sets", + issue = "8", + publisher = "American Physical Society", + numpages = "11", + pages = "085101", + notes = "quamol, basis set, for planc", +} + +@Article{artacho91, + volume = "43", + journal = "Phys. Rev. A", + author = "Emilio Artacho and Lorenzo Mil\'ans del Bosch", + month = jun, + URL = "http://link.aps.org/doi/10.1103/PhysRevA.43.5770", + doi = "10.1103/PhysRevA.43.5770", + year = "1991", + title = "Nonorthogonal basis sets in quantum mechanics: + Representations and second quantization", + issue = "11", + publisher = "American Physical Society", + pages = "5770--5777", + notes = "non-orthogonal basis set", +} + +@Article{loewdin50, + author = "Per-Olov L{\"{o}}wdin", + collaboration = "", + title = "On the Non-Orthogonality Problem Connected with the + Use of Atomic Wave Functions in the Theory of Molecules + and Crystals", + publisher = "AIP", + year = "1950", + journal = "The Journal of Chemical Physics", + volume = "18", + number = "3", + pages = "365--375", + URL = "http://link.aip.org/link/?JCP/18/365/1", + doi = "10.1063/1.1747632", + notes = "non orthogonal basis set", +} + +@Article{loewdin68, + author = "Per-Olov Löwdin", + title = "Studies in perturbation theory {XIII}. Treatment of + constants of motion in resolvent method, partitioning + technique, and perturbation theory", + journal = "International Journal of Quantum Chemistry", + volume = "2", + number = "6", + publisher = "John Wiley & Sons, Inc.", + ISSN = "1097-461X", + URL = "http://dx.doi.org/10.1002/qua.560020612", + doi = "10.1002/qua.560020612", + pages = "867--931", + year = "1968", +} + +@Article{chadi77, + volume = "16", + journal = "Phys. Rev. B", + author = "D. J. Chadi", + month = oct, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.16.3572", + doi = "10.1103/PhysRevB.16.3572", + year = "1977", + title = "Localized-orbital description of wave functions and + energy bands in semiconductors", + issue = "8", + publisher = "American Physical Society", + pages = "3572--3578", + notes = "localized orbitals", +} + +@Article{wigner33, + volume = "43", + journal = "Phys. Rev.", + author = "E. Wigner and F. 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