X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=7e985e19f3121c5ae7ffcee5b51e77447c1a38d5;hp=5b356b666a4d363df60a9d55de804f7fb23daa5f;hb=1ce657a7616d6ea2d08abf66696988bae2d568ce;hpb=b1a5bacf36c7bf3873d6631d7deb1571781d5e7e diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 5b356b6..7e985e1 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -41,12 +41,17 @@ } @Article{bean71, - author = "A. R. Bean and R. C. Newman", - title = "", - journal = "J. Phys. Chem. Solids", + title = "The solubility of carbon in pulled silicon crystals", + journal = "Journal of Physics and Chemistry of Solids", volume = "32", - pages = "1211", + number = "6", + pages = "1211--1219", year = "1971", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/S0022-3697(71)80179-8", + URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5", + author = "A. R. Bean and R. C. Newman", notes = "experimental solubility data of carbon in silicon", } @@ -70,6 +75,23 @@ notes = "sic polytypes", } +@Article{koegler03, + author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and + A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C. + Serre and A. Perez-Rodriguez", + title = "Synthesis of nano-sized Si{C} precipitates in Si by + simultaneous dual-beam implantation of {C}+ and Si+ + ions", + journal = "Applied Physics A: Materials Science \& Processing", + volume = "76", + pages = "827--835", + month = mar, + year = "2003", + notes = "dual implantation, sic prec enhanced by vacancies, + precipitation by interstitial and substitutional + carbon, both mechanisms explained + refs", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -274,7 +296,7 @@ dumbbell configuration", } -@Article{gao02, +@Article{gao02a, title = "Cascade overlap and amorphization in $3{C}-Si{C}:$ Defect accumulation, topological features, and disordering", @@ -355,7 +377,78 @@ notes = "si self interstitial, diffusion, tbmd", } -@Article{tang97, +@Article{johnson98, + author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la + Rubia", + collaboration = "", + title = "A kinetic Monte--Carlo study of the effective + diffusivity of the silicon self-interstitial in the + presence of carbon and boron", + publisher = "AIP", + year = "1998", + journal = "Journal of Applied Physics", + volume = "84", + number = "4", + pages = "1963--1967", + keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS; + CARBON ADDITIONS; BORON ADDITIONS; elemental + semiconductors; self-diffusion", + URL = "http://link.aip.org/link/?JAP/84/1963/1", + doi = "10.1063/1.368328", + notes = "kinetic monte carlo of si self interstitial + diffsuion", +} + +@Article{bar-yam84, + title = "Barrier to Migration of the Silicon + Self-Interstitial", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. Lett.", + volume = "52", + number = "13", + pages = "1129--1132", + numpages = "3", + year = "1984", + month = mar, + doi = "10.1103/PhysRevLett.52.1129", + publisher = "American Physical Society", + notes = "si self-interstitial migration barrier", +} + +@Article{bar-yam84_2, + title = "Electronic structure and total-energy migration + barriers of silicon self-interstitials", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "30", + number = "4", + pages = "1844--1852", + numpages = "8", + year = "1984", + month = aug, + doi = "10.1103/PhysRevB.30.1844", + publisher = "American Physical Society", +} + +@Article{bloechl93, + title = "First-principles calculations of self-diffusion + constants in silicon", + author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car + and D. B. Laks and W. Andreoni and S. T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "70", + number = "16", + pages = "2435--2438", + numpages = "3", + year = "1993", + month = apr, + doi = "10.1103/PhysRevLett.70.2435", + publisher = "American Physical Society", + notes = "si self int diffusion by ab initio md, formation + entropy calculations", +} + +@Article{colombo02, title = "Tight-binding theory of native point defects in silicon", author = "L. Colombo", @@ -383,7 +476,23 @@ doi = "10.1103/PhysRevB.68.235205", publisher = "American Physical Society", notes = "formation energies of intrinisc point defects in - silicon, si self interstitials", + silicon, si self interstitials, free energy", +} + +@Article{goedecker02, + title = "A Fourfold Coordinated Point Defect in Silicon", + author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", + journal = "Phys. Rev. Lett.", + volume = "88", + number = "23", + pages = "235501", + numpages = "4", + year = "2002", + month = may, + doi = "10.1103/PhysRevLett.88.235501", + publisher = "American Physical Society", + notes = "first time ffcd, fourfold coordinated point defect in + silicon", } @Article{ma10, @@ -403,6 +512,39 @@ notes = "si self interstitial diffusion + refs", } +@Article{posselt06, + title = "Atomistic simulations on the thermal stability of the + antisite pair in 3{C}- and 4{H}-Si{C}", + author = "M. Posselt and F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "73", + number = "12", + pages = "125206", + numpages = "8", + year = "2006", + month = mar, + doi = "10.1103/PhysRevB.73.125206", + publisher = "American Physical Society", +} + +@Article{posselt08, + title = "Correlation between self-diffusion in Si and the + migration mechanisms of vacancies and + self-interstitials: An atomistic study", + author = "M. Posselt and F. Gao and H. Bracht", + journal = "Phys. Rev. B", + volume = "78", + number = "3", + pages = "035208", + numpages = "9", + year = "2008", + month = jul, + doi = "10.1103/PhysRevB.78.035208", + publisher = "American Physical Society", + notes = "si self-interstitial and vacancy diffusion, stillinger + weber and tersoff", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", @@ -420,6 +562,67 @@ notes = "defects in 3c-sic", } +@Article{gao02, + title = "Empirical potential approach for defect properties in + 3{C}-Si{C}", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "191", + number = "1-4", + pages = "504--508", + year = "2002", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(02)00600-6", + URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7", + author = "Fei Gao and William J. Weber", + keywords = "Empirical potential", + keywords = "Defect properties", + keywords = "Silicon carbide", + keywords = "Computer simulation", + notes = "sic potential, brenner type, like erhart/albe", +} + +@Article{gao04, + title = "Atomistic study of intrinsic defect migration in + 3{C}-Si{C}", + author = "Fei Gao and William J. Weber and M. Posselt and V. + Belko", + journal = "Phys. Rev. B", + volume = "69", + number = "24", + pages = "245205", + numpages = "5", + year = "2004", + month = jun, + doi = "10.1103/PhysRevB.69.245205", + publisher = "American Physical Society", + notes = "defect migration in sic", +} + +@Article{gao07, + author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and + W. J. Weber", + collaboration = "", + title = "Ab Initio atomic simulations of antisite pair recovery + in cubic silicon carbide", + publisher = "AIP", + year = "2007", + journal = "Applied Physics Letters", + volume = "90", + number = "22", + eid = "221915", + numpages = "3", + pages = "221915", + keywords = "ab initio calculations; silicon compounds; antisite + defects; wide band gap semiconductors; molecular + dynamics method; density functional theory; + electron-hole recombination; photoluminescence; + impurities; diffusion", + URL = "http://link.aip.org/link/?APL/90/221915/1", + doi = "10.1063/1.2743751", +} + @Article{mattoni2002, title = "Self-interstitial trapping by carbon complexes in crystalline silicon", @@ -458,7 +661,7 @@ @Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -472,10 +675,25 @@ dumbbell", } +@Article{capaz98, + title = "Theory of carbon-carbon pairs in silicon", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "58", + number = "15", + pages = "9845--9850", + numpages = "5", + year = "1998", + month = oct, + doi = "10.1103/PhysRevB.58.9845", + publisher = "American Physical Society", + notes = "carbon pairs in si", +} + @Article{dal_pino93, title = "Ab initio investigation of carbon-related defects in silicon", - author = "A. Dal Pino and Andrew M. Rappe and J. D. + author = "A. {Dal Pino} and Andrew M. Rappe and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "47", @@ -507,6 +725,22 @@ path formation", } +@Article{car85, + title = "Unified Approach for Molecular Dynamics and + Density-Functional Theory", + author = "R. Car and M. Parrinello", + journal = "Phys. Rev. Lett.", + volume = "55", + number = "22", + pages = "2471--2474", + numpages = "3", + year = "1985", + month = nov, + doi = "10.1103/PhysRevLett.55.2471", + publisher = "American Physical Society", + notes = "car parrinello method, dft and md", +} + @Article{kelires97, title = "Short-range order, bulk moduli, and physical trends in c-$Si1-x$$Cx$ alloys", @@ -575,7 +809,7 @@ @Article{song90, title = "{EPR} identification of the single-acceptor state of interstitial carbon in silicon", - author = "G. D. Watkins L. W. Song", + author = "L. W. Song and G. D. Watkins", journal = "Phys. Rev. B", volume = "42", number = "9", @@ -618,13 +852,16 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - author = "P. Laveant and G. Gerth and P. Werner and U. - G{\"o}sele", journal = "Materials Science and Engineering B", volume = "89", number = "1-3", pages = "241--245", - keywords = "Growth; Epitaxy; MBE; Carbon; Silicon", + year = "2002", + ISSN = "0921-5107", + doi = "DOI: 10.1016/S0921-5107(01)00794-2", + URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268", + author = "P. Lav\'eant and G. Gerth and P. Werner and U. + G{\"{o}}sele", notes = "low c in si, tensile stress to compensate compressive stress, avoid sic precipitation", } @@ -651,7 +888,7 @@ } @InProceedings{werner96, - author = "P. Werner and R. Koegler and W. Skorupa and D. + author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. Eichler", booktitle = "Ion Implantation Technology. Proceedings of the 11th International Conference on", @@ -696,7 +933,30 @@ keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", URL = "http://link.aip.org/link/?JAP/76/3656/1", doi = "10.1063/1.357429", - notes = "strained si-c to 3c-sic, carbon nucleation + refs", + notes = "strained si-c to 3c-sic, carbon nucleation + refs, + precipitation by substitutional carbon, coherent prec, + coherent to incoherent transition strain vs interface + energy", +} + +@Article{fischer95, + author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J. + Osten", + collaboration = "", + title = "Investigation of the high temperature behavior of + strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "77", + number = "5", + pages = "1934--1937", + keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS; + XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE + PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION; + TEMPERATURE RANGE 04001000 K", + URL = "http://link.aip.org/link/?JAP/77/1934/1", + doi = "10.1063/1.358826", } @Article{edgar92, @@ -813,7 +1073,7 @@ ISSN = "0168-583X", doi = "DOI: 10.1016/S0168-583X(01)00504-3", URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", - author = "Jörg K. N. Lindner", + author = "J{\"{o}}rg K. N. Lindner", } @Article{lindner02, @@ -1008,6 +1268,19 @@ FILMS; INDUSTRY", URL = "http://link.aip.org/link/?JAP/76/1363/1", doi = "10.1063/1.358463", + notes = "sic intro, properties", +} + +@Article{neudeck95, + author = "P. G. Neudeck", + title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} + {ELECTRONICS} {TECHNOLOGY}", + journal = "Journal of Electronic Materials", + year = "1995", + volume = "24", + number = "4", + pages = "283--288", + month = apr, } @Article{foo, @@ -1065,6 +1338,7 @@ doi = "DOI: 10.1016/0038-1101(96)00045-7", URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b", author = "J. B. Casady and R. W. Johnson", + notes = "sic intro", } @Article{giancarli98, @@ -1103,7 +1377,7 @@ number = "2", pages = "209--212", year = "1978", - notes = "modifief lely process", + notes = "modified lely process", ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(78)90169-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc", @@ -1239,8 +1513,8 @@ ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(95)00170-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", - author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter - and W. Richter", + author = "A. Fissel and U. Kaiser and E. Ducke and B. + Schr{\"{o}}ter and W. Richter", notes = "solid source mbe of 3c-sic on si and 6h-sic", } @@ -1310,7 +1584,7 @@ pages = "1551--1555", URL = "http://link.aip.org/link/?JCP/30/1551/1", doi = "10.1063/1.1730236", - notes = "solubility of c in c-si", + notes = "solubility of c in c-si, si-c phase diagram", } @Article{cowern96, @@ -1672,8 +1946,8 @@ @Article{justo98, title = "Interatomic potential for silicon defects and disordered phases", - author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios - Kaxiras and V. V. Bulatov and Sidney Yip", + author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and + Efthimios Kaxiras and V. V. Bulatov and Sidney Yip", journal = "Phys. Rev. B", volume = "58", number = "5", @@ -1938,6 +2212,44 @@ model, interface", } +@Article{chirita97, + title = "Strain relaxation and thermal stability of the + 3{C}-Si{C}(001)/Si(001) interface: {A} molecular + dynamics study", + journal = "Thin Solid Films", + volume = "294", + number = "1-2", + pages = "47--49", + year = "1997", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/S0040-6090(96)09257-7", + URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4", + author = "V. Chirita and L. Hultman and L. R. Wallenberg", + keywords = "Strain relaxation", + keywords = "Interfaces", + keywords = "Thermal stability", + keywords = "Molecular dynamics", + notes = "tersoff sic/si interface study", +} + +@Article{cicero02, + title = "Ab initio Study of Misfit Dislocations at the + $Si{C}/Si(001)$ Interface", + author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra + Catellani", + journal = "Phys. Rev. Lett.", + volume = "89", + number = "15", + pages = "156101", + numpages = "4", + year = "2002", + month = sep, + doi = "10.1103/PhysRevLett.89.156101", + publisher = "American Physical Society", + notes = "sic/si interface study", +} + @Article{pizzagalli03, title = "Theoretical investigations of a highly mismatched interface: Si{C}/Si(001)", @@ -2007,8 +2319,8 @@ precipitation; semiconductor doping", URL = "http://link.aip.org/link/?JAP/86/4184/1", doi = "10.1063/1.371344", - notes = "sic conversion by ibs, detected substitutional - carbon", + notes = "sic conversion by ibs, detected substitutional carbon, + expansion of si lattice", } @Article{eichhorn02, @@ -2078,6 +2390,22 @@ notes = "tersoff stringent test", } +@Article{mazzarolo01, + title = "Low-energy recoils in crystalline silicon: Quantum + simulations", + author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio + Lulli and Eros Albertazzi", + journal = "Phys. Rev. B", + volume = "63", + number = "19", + pages = "195207", + numpages = "4", + year = "2001", + month = apr, + doi = "10.1103/PhysRevB.63.195207", + publisher = "American Physical Society", +} + @Article{holmstroem08, title = "Threshold defect production in silicon determined by density functional theory molecular dynamics @@ -2112,3 +2440,389 @@ author = "K. Nordlund and N. Runeberg and D. Sundholm", notes = "repulsive ab initio potential", } + +@Article{kresse96, + title = "Efficiency of ab-initio total energy calculations for + metals and semiconductors using a plane-wave basis + set", + journal = "Computational Materials Science", + volume = "6", + number = "1", + pages = "15--50", + year = "1996", + note = "", + ISSN = "0927-0256", + doi = "DOI: 10.1016/0927-0256(96)00008-0", + URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74", + author = "G. Kresse and J. 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Hemment and J. Stoemenos", + collaboration = "", + title = "Si{C} buried layer formation by ion beam synthesis at + 950 [degree]{C}", + publisher = "AIP", + year = "1995", + journal = "Applied Physics Letters", + volume = "66", + number = "20", + pages = "2646--2648", + keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON + CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 -- + 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION + ELECTRON MICROSCOPY", + URL = "http://link.aip.org/link/?APL/66/2646/1", + doi = "10.1063/1.113112", + notes = "precipitation mechanism by substitutional carbon, si + self interstitials react with further implanted c", +} + +@Article{guedj98, + author = "C. Guedj and M. W. Dashiell and L. Kulik and J. + Kolodzey and A. 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