X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=8796de219e95bb05d0a59aba227cd4a6edfb39e0;hp=e5abf0d0a00891b3fa5d1674bda6a38b01e8c31e;hb=dc0deea5b42244c00f164e45d96f6aa74c161107;hpb=57c4f83501c66926136800286a47ca736c474af8 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index e5abf0d..8796de2 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -5,7 +5,7 @@ @Article{schroedinger26, author = "E. Schrödinger", title = "Quantisierung als Eigenwertproblem", - journal = "Annalen der Physik", + journal = "Ann. Phys. (Leipzig)", volume = "384", number = "4", publisher = "WILEY-VCH Verlag", @@ -21,7 +21,7 @@ affiliation = "Institut d. Universität f. theor. Physik Leipzig", title = "Über die Quantenmechanik der Elektronen in Kristallgittern", - journal = "Zeitschrift für Physik A Hadrons and Nuclei", + journal = "Z. Phys.", publisher = "Springer Berlin / Heidelberg", ISSN = "0939-7922", keyword = "Physics and Astronomy", @@ -58,7 +58,7 @@ @Article{erhart04, title = "The role of thermostats in modeling vapor phase condensation of silicon nanoparticles", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "226", number = "1-3", pages = "12--18", @@ -159,7 +159,7 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Appl. Phys. A: Mater. Sci. Process.", + journal = "Appl. Phys. A", volume = "76", pages = "827--835", month = mar, @@ -173,7 +173,7 @@ @Article{skorupa96, title = "Carbon-mediated effects in silicon and in silicon-related materials", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "44", number = "2", pages = "101--143", @@ -294,7 +294,7 @@ author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon Diablo", - journal = "Comptes rendus de l'Académie des Sciences", + journal = "C. R. Acad. Sci.", volume = "139", pages = "773--786", year = "1904", @@ -312,7 +312,7 @@ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and Calvin H. Carter Jr. and D. Asbury", title = "Si{C} Seeded Boule Growth", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "3--8", year = "1998", @@ -1003,7 +1003,7 @@ @Article{bean70, title = "Low temperature electron irradiation of silicon containing carbon", - journal = "Solid State Communications", + journal = "Solid State Commun.", volume = "8", number = "3", pages = "175--177", @@ -1477,7 +1477,7 @@ Rauschenbach and B. Stritzker", title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} Layers in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "354", number = "", pages = "171", @@ -1491,7 +1491,7 @@ @Article{lindner96, title = "Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "46", number = "2-3", pages = "147--155", @@ -1509,8 +1509,7 @@ @Article{calcagno96, title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by ion implantation", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "120", number = "1-4", pages = "121--124", @@ -1528,7 +1527,7 @@ @Article{lindner98, title = "Mechanisms of Si{C} Formation in the Ion Beam Synthesis of 3{C}-Si{C} Layers in Silicon", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "215--218", year = "1998", @@ -1622,7 +1621,7 @@ title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial growth", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "238", number = "1-4", pages = "159--164", @@ -1657,7 +1656,7 @@ @Article{liu_l02, title = "Substrates for gallium nitride epitaxy", - journal = "Materials Science and Engineering: R: Reports", + journal = "Mater. Sci. Eng., R", volume = "37", number = "3", pages = "61--127", @@ -1878,7 +1877,7 @@ @Article{davis91, author = "R. F. Davis and G. Kelner and M. Shur and J. W. Palmour and J. A. Edmond", - journal = "Proceedings of the IEEE", + journal = "Proc. IEEE", title = "Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide", @@ -1950,7 +1949,7 @@ @Article{sarro00, title = "Silicon carbide as a new {MEMS} technology", - journal = "Sensors and Actuators A: Physical", + journal = "Seonsor. Actuator. A", volume = "82", number = "1-3", pages = "210--218", @@ -1969,7 +1968,7 @@ title = "Status of silicon carbide (Si{C}) as a wide-bandgap semiconductor for high-temperature applications: {A} review", - journal = "Solid-State Electronics", + journal = "Solid-State Electron.", volume = "39", number = "10", pages = "1409--1422", @@ -1984,7 +1983,7 @@ @Article{giancarli98, title = "Design requirements for Si{C}/Si{C} composites structural material in fusion power reactor blankets", - journal = "Fusion Engineering and Design", + journal = "Fusion Eng. Des.", volume = "41", number = "1-4", pages = "165--171", @@ -1998,7 +1997,7 @@ @Article{pensl93, title = "Electrical and optical characterization of Si{C}", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "185", number = "1-4", pages = "264--283", @@ -2440,7 +2439,7 @@ by ion implantation", publisher = "Taylor \& Francis", year = "1976", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "29", number = "1", pages = "13--15", @@ -2456,7 +2455,7 @@ by high doses of 70 and 310 ke{V} carbon ions", publisher = "Taylor \& Francis", year = "1980", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "48", number = "1", pages = "7", @@ -2505,7 +2504,7 @@ compounds formed in silicon by ion beam synthesis", publisher = "Taylor \& Francis", year = "1986", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "99", number = "1", pages = "71--81", @@ -2579,7 +2578,7 @@ Netherlands", title = "Boron implantations in silicon: {A} comparison of charge carrier and boron concentration profiles", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A", publisher = "Springer Berlin / Heidelberg", ISSN = "0947-8396", keyword = "Physics and Astronomy", @@ -2732,7 +2731,7 @@ author = "E Kasper", title = "Superlattices of group {IV} elements, a new possibility to produce direct band gap material", - journal = "Physica Scripta", + journal = "Phys. Scr.", volume = "T35", pages = "232--236", URL = "http://stacks.iop.org/1402-4896/T35/232", @@ -2894,7 +2893,7 @@ @Article{born27, author = "M. Born and R. Oppenheimer", title = "Zur Quantentheorie der Molekeln", - journal = "Annalen der Physik", + journal = "Ann. Phys. (Leipzig)", volume = "389", number = "20", publisher = "WILEY-VCH Verlag", @@ -2923,8 +2922,7 @@ @Article{thomas27, title = "The calculation of atomic fields", author = "L. H. Thomas", - journal = "Mathematical Proceedings of the Cambridge - Philosophical Society", + journal = "Proc. Cambridge Philos. Soc.", volume = "23", pages = "542--548", year = "1927", @@ -2945,8 +2943,7 @@ title = "The Wave Mechanics of an Atom with a Non-Coulomb Central Field. Part {I}. Theory and Methods", author = "D. R. Hartree", - journal = "Mathematical Proceedings of the Cambridge - Philosophical Society", + journal = "Proc. Cambridge Philos. Soc.", volume = "24", pages = "89--110", year = "1928", @@ -4002,7 +3999,7 @@ @Article{perdew02, title = "Generalized gradient approximations for exchange and correlation: {A} look backward and forward", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "172", number = "1-2", pages = "1--6", @@ -4355,7 +4352,7 @@ @Article{losev28, title = "Luminous carborundum detector and detection effect and oscillations with crystals", - journal = "Philosophical Magazine Series 7", + journal = "Philos. Mag. Series 7", volume = "6", number = "39", pages = "1024--1044", @@ -4851,7 +4848,7 @@ @Article{allendorf91, title = "The adsorption of {H}-atoms on polycrystalline [beta]-silicon carbide", - journal = "Surface Science", + journal = "Surf. Sci.", volume = "258", number = "1-3", pages = "177--189", @@ -4887,7 +4884,7 @@ @Article{newman85, author = "Ronald C. Newman", title = "Carbon in Crystalline Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "403", @@ -4915,7 +4912,7 @@ @Article{goesele85, author = "U. Gösele", title = "The Role of Carbon and Point Defects in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "419",