X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=a17cd642c451d0cd72bebbeb19a02023369465d1;hp=2ad84fedcd4a4468e1be35deee21361c1f9be540;hb=bf5f19538e8f53f5385c561ebf723eb5014e8264;hpb=22516b7408d26800b1dde9f8b6e85dca9b507a05 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 2ad84fe..a17cd64 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -2,354 +2,1079 @@ % bibliography database % -% molecular dynamics: basics / potential - -@article{albe_sic_pot, - author = {Paul Erhart and Karsten Albe}, - title = {Analytical potential for atomistic simulations of silicon, carbon, - and silicon carbide}, - publisher = {APS}, - year = {2005}, - journal = {Phys. Rev. B}, - volume = {71}, - number = {3}, - eid = {035211}, - numpages = {14}, - pages = {035211}, - notes = {alble reparametrization, analytical bond oder potential (ABOP)}, - keywords = {silicon; elemental semiconductors; carbon; silicon compounds; - wide band gap semiconductors; elasticity; enthalpy; - point defects; crystallographic shear; atomic forces}, - url = {http://link.aps.org/abstract/PRB/v71/e035211}, - doi = {10.1103/PhysRevB.71.035211} +@Article{albe_sic_pot, + author = "Paul Erhart and Karsten Albe", + title = "Analytical potential for atomistic simulations of + silicon, carbon, and silicon carbide", + publisher = "APS", + year = "2005", + journal = "Phys. Rev. B", + volume = "71", + number = "3", + eid = "035211", + numpages = "14", + pages = "035211", + notes = "alble reparametrization, analytical bond oder + potential (ABOP)", + keywords = "silicon; elemental semiconductors; carbon; silicon + compounds; wide band gap semiconductors; elasticity; + enthalpy; point defects; crystallographic shear; atomic + forces", + URL = "http://link.aps.org/abstract/PRB/v71/e035211", + doi = "10.1103/PhysRevB.71.035211", } @Article{albe2002, - title = {Modeling the metal-semiconductor interaction: - Analytical bond-order potential for platinum-carbon}, - author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.}, - journal = {Phys. Rev. B}, - volume = {65}, - number = {19}, - pages = {195124}, - numpages = {11}, - year = {2002}, - month = {May}, - doi = {10.1103/PhysRevB.65.195124}, - publisher = {American Physical Society}, - notes = {derivation of albe bond order formalism}, + title = "Modeling the metal-semiconductor interaction: + Analytical bond-order potential for platinum-carbon", + author = "Karsten Albe and Kai Nordlund and Robert S. Averback", + journal = "Phys. Rev. B", + volume = "65", + number = "19", + pages = "195124", + numpages = "11", + year = "2002", + month = may, + doi = "10.1103/PhysRevB.65.195124", + publisher = "American Physical Society", + notes = "derivation of albe bond order formalism", +} + +@Article{capano97, + author = "M. A. Capano and R. J. Trew", + title = "Silicon Carbide Electronic Materials and Devices", + journal = "MRS Bull.", + volume = "22", + pages = "19", + year = "1997", +} + +@Book{laplace, + author = "P. S. de Laplace", + title = "Th\'eorie analytique des probabilit\'es", + series = "Oeuvres Compl\`etes de Laplace", + volume = "VII", + publisher = "Gauthier-Villars", + year = "1820", +} + +@Article{mattoni2007, + author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}", + title = "{Atomistic modeling of brittleness in covalent + materials}", + journal = "Phys. Rev. B", + year = "2007", + month = dec, + volume = "76", + number = "22", + pages = "224103", + doi = "10.1103/PhysRevB.76.224103", + notes = "adopted tersoff potential for Si, C, Ge ad SiC; + longe(r)-range-interactions, brittle propagation of + fracture, more available potentials, universal energy + relation (uer), minimum range model (mrm)", } @Article{koster2002, - title = {Stress relaxation in $a-Si$ induced by ion bombardment}, - author = {M. Koster, H. M. Urbassek}, - journal = {Phys. Rev. B}, - volume = {62}, - number = {16}, - pages = {11219--11224}, - numpages = {5}, - year = {2000}, - month = {Oct}, - doi = {10.1103/PhysRevB.62.11219}, - publisher = {American Physical Society}, - notes = {virial derivation for 3-body tersoff potential} + title = "Stress relaxation in $a-Si$ induced by ion + bombardment", + author = "H. M. Urbassek M. Koster", + journal = "Phys. Rev. B", + volume = "62", + number = "16", + pages = "11219--11224", + numpages = "5", + year = "2000", + month = oct, + doi = "10.1103/PhysRevB.62.11219", + publisher = "American Physical Society", + notes = "virial derivation for 3-body tersoff potential", } @Article{breadmore99, - title = {Direct simulation of ion-beam-induced stressing - and amorphization of silicon}, - author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen}, - journal = {Phys. Rev. B}, - volume = {60}, - number = {18}, - pages = {12610--12616}, - numpages = {6}, - year = {1999}, - month = {Nov}, - doi = {10.1103/PhysRevB.60.12610}, - publisher = {American Physical Society}, - notes = {virial derivation for 3-body tersoff potential} + title = "Direct simulation of ion-beam-induced stressing and + amorphization of silicon", + author = "N. Gr\o{}nbech-Jensen K. M. Beardmore", + journal = "Phys. Rev. B", + volume = "60", + number = "18", + pages = "12610--12616", + numpages = "6", + year = "1999", + month = nov, + doi = "10.1103/PhysRevB.60.12610", + publisher = "American Physical Society", + notes = "virial derivation for 3-body tersoff potential", +} + +@Book{park98, + author = "Y. S. Park", + title = "Si{C} Materials and Devices", + publisher = "Academic Press", + address = "San Diego", + year = "1998", +} + +@Article{tsvetkov98, + author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and + Calvin H. Carter Jr. and D. Asbury", + title = "Si{C} Seeded Boule Growth", + journal = "Materials Science Forum", + volume = "264-268", + pages = "3--8", + year = "1998", + notes = "modified lely process, micropipes", } @Article{verlet67, - title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules}, - author = {Verlet, Loup }, - journal = {Phys. Rev.}, - volume = {159}, - number = {1}, - pages = {98}, - year = {1967}, - month = {Jul}, - doi = {10.1103/PhysRev.159.98}, - publisher = {American Physical Society}, - notes = {velocity verlet integration algorithm equation of motion} + title = "Computer {"}Experiments{"} on Classical Fluids. {I}. + Thermodynamical Properties of Lennard-Jones Molecules", + author = "Loup Verlet", + journal = "Phys. Rev.", + volume = "159", + number = "1", + pages = "98", + year = "1967", + month = jul, + doi = "10.1103/PhysRev.159.98", + publisher = "American Physical Society", + notes = "velocity verlet integration algorithm equation of + motion", } @Article{berendsen84, - title = {Molecular dynamics with coupling to an external bath}, - author = {H. J. C. Berendsen}, - year = {1984}, - journal = {J. Chem. Phys.}, - volume = {81}, - pages = {3684}, - notes = {berendsen thermostat barostat} + author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van + Gunsteren and A. DiNola and J. R. Haak", + collaboration = "", + title = "Molecular dynamics with coupling to an external bath", + publisher = "AIP", + year = "1984", + journal = "The Journal of Chemical Physics", + volume = "81", + number = "8", + pages = "3684--3690", + keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY; + COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS", + URL = "http://link.aip.org/link/?JCP/81/3684/1", + doi = "10.1063/1.448118", + notes = "berendsen thermostat barostat", } -% molecular dynamics: applications +@Article{huang95, + author = "Hanchen Huang and N M Ghoniem and J K Wong and M + Baskes", + title = "Molecular dynamics determination of defect energetics + in beta -Si{C} using three representative empirical + potentials", + journal = "Modelling and Simulation in Materials Science and + Engineering", + volume = "3", + number = "5", + pages = "615--627", + URL = "http://stacks.iop.org/0965-0393/3/615", + notes = "comparison of tersoff, pearson and eam for defect + energetics in sic; (m)eam parameters for sic", + year = "1995", +} + +@Article{tersoff89, + title = "Relationship between the embedded-atom method and + Tersoff potentials", + author = "Donald W. Brenner", + journal = "Phys. Rev. Lett.", + volume = "63", + number = "9", + pages = "1022", + numpages = "1", + year = "1989", + month = aug, + doi = "10.1103/PhysRevLett.63.1022", + publisher = "American Physical Society", + notes = "relation of tersoff and eam potential", +} @Article{batra87, - title = {Molecular-dynamics study of self-interstitials in silicon}, - author = {Inder P. Batra, Farid F. Abraham, S. Ciraci}, - journal = {Phys. Rev. B}, - volume = {35}, - number = {18}, - pages = {9552--9558}, - numpages = {6}, - year = {1987}, - month = {Jun}, - doi = {10.1103/PhysRevB.35.9552}, - publisher = {American Physical Society}, - notes = {selft-interstitials in silicon, stillinger-weber, - calculation of defect formation energy, defect interstitial types} + title = "Molecular-dynamics study of self-interstitials in + silicon", + author = "Inder P. Batra and Farid F. Abraham and S. Ciraci", + journal = "Phys. Rev. B", + volume = "35", + number = "18", + pages = "9552--9558", + numpages = "6", + year = "1987", + month = jun, + doi = "10.1103/PhysRevB.35.9552", + publisher = "American Physical Society", + notes = "selft-interstitials in silicon, stillinger-weber, + calculation of defect formation energy, defect + interstitial types", } @Article{schober89, - title = {Extended interstitials in silicon and germanium}, - author = {H. R. Schober}, - journal = {Phys. Rev. B}, - volume = {39}, - number = {17}, - pages = {13013--13015}, - numpages = {2}, - year = {1989}, - month = {Jun}, - doi = {10.1103/PhysRevB.39.13013}, - publisher = {American Physical Society}, - notes = {stillinger-weber silicon 110 stable and metastable dumbbell - configuration} + title = "Extended interstitials in silicon and germanium", + author = "H. R. Schober", + journal = "Phys. Rev. B", + volume = "39", + number = "17", + pages = "13013--13015", + numpages = "2", + year = "1989", + month = jun, + doi = "10.1103/PhysRevB.39.13013", + publisher = "American Physical Society", + notes = "stillinger-weber silicon 110 stable and metastable + dumbbell configuration", } @Article{gao02, - title = {Cascade overlap and amorphization in $3C-SiC:$ - Defect accumulation, topological features, and disordering}, - author = {Gao, F. and Weber, W. J.}, - journal = {Phys. Rev. B}, - volume = {66}, - number = {2}, - pages = {024106}, - numpages = {10}, - year = {2002}, - month = {Jul}, - doi = {10.1103/PhysRevB.66.024106}, - publisher = {American Physical Society}, - note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified, - pair correlation of amorphous sic, md result analyze} -} - -% tight binding + title = "Cascade overlap and amorphization in $3{C}-Si{C}:$ + Defect accumulation, topological features, and + disordering", + author = "F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "66", + number = "2", + pages = "024106", + numpages = "10", + year = "2002", + month = jul, + doi = "10.1103/PhysRevB.66.024106", + publisher = "American Physical Society", + notes = "sic intro, si cascade in 3c-sic, amorphization, + tersoff modified, pair correlation of amorphous sic, md + result analyze", +} -@Article{tang97, - title = {Intrinsic point defects in crystalline silicon: - Tight-binding molecular dynamics studiesof self-diffusion, - interstitial-vacancy recombination, and formation volumes}, - author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia}, - journal = {Phys. Rev. B}, - volume = {55}, - number = {21}, - pages = {14279--14289}, - numpages = {10}, - year = {1997}, - month = {Jun}, - doi = {10.1103/PhysRevB.55.14279}, - publisher = {American Physical Society}, - notes = {si self interstitial, diffusion, tbmd} +@Article{devanathan98, + title = "Computer simulation of a 10 ke{V} Si displacement + cascade in Si{C}", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "141", + number = "1-4", + pages = "118--122", + year = "1998", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00084-6", + author = "R. Devanathan and W. J. Weber and T. Diaz de la + Rubia", + notes = "modified tersoff short range potential, ab initio + 3c-sic", +} + +@Article{devanathan98_2, + title = "Displacement threshold energies in [beta]-Si{C}", + journal = "Journal of Nuclear Materials", + volume = "253", + number = "1-3", + pages = "47--52", + year = "1998", + ISSN = "0022-3115", + doi = "DOI: 10.1016/S0022-3115(97)00304-8", + author = "R. Devanathan and T. Diaz de la Rubia and W. J. + Weber", + notes = "modified tersoff, ab initio, combined ab initio + tersoff", +} + +@Article{batra87, + title = "Si{C}/Si heteroepitaxial growth", + author = "M. Kitabatake", + journal = "Thin Solid Films", + volume = "369", + pages = "257--264", + numpages = "8", + year = "2000", + notes = "md simulation, sic si heteroepitaxy, mbe", } @Article{tang97, - title = {Tight-binding theory of native point defects in silicon}, - author = {L. Colombo}, - journal = {Annu. Rev. Mater. Res.}, - volume = {32}, - pages = {271--295}, - numpages = {25}, - year = {2002}, - doi = {10.1146/annurev.matsci.32.111601.103036}, - publisher = {Annual Reviews}, - notes = {si self interstitial, tbmd, virial stress} + title = "Intrinsic point defects in crystalline silicon: + Tight-binding molecular dynamics studies of + self-diffusion, interstitial-vacancy recombination, and + formation volumes", + author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la + Rubia", + journal = "Phys. Rev. B", + volume = "55", + number = "21", + pages = "14279--14289", + numpages = "10", + year = "1997", + month = jun, + doi = "10.1103/PhysRevB.55.14279", + publisher = "American Physical Society", + notes = "si self interstitial, diffusion, tbmd", } -% mixed +@Article{tang97, + title = "Tight-binding theory of native point defects in + silicon", + author = "L. Colombo", + journal = "Annu. Rev. Mater. Res.", + volume = "32", + pages = "271--295", + numpages = "25", + year = "2002", + doi = "10.1146/annurev.matsci.32.111601.103036", + publisher = "Annual Reviews", + notes = "si self interstitial, tbmd, virial stress", +} @Article{gao2001, - title = {Ab initio and empirical-potential studies of defect properties - in $3C-SiC$ }, - author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales}, - journal = {Phys. Rev. B}, - volume = {64}, - number = {24}, - pages = {245208}, - numpages = {7}, - year = {2001}, - month = {Dec}, - doi = {10.1103/PhysRevB.64.245208}, - publisher = {American Physical Society}, - notes = {defects in 3c-sic} -} - -% ab initio + title = "Ab initio and empirical-potential studies of defect + properties in $3{C}-Si{C}$", + author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R. + Corrales", + journal = "Phys. Rev. B", + volume = "64", + number = "24", + pages = "245208", + numpages = "7", + year = "2001", + month = dec, + doi = "10.1103/PhysRevB.64.245208", + publisher = "American Physical Society", + notes = "defects in 3c-sic", +} + +@Article{mattoni2002, + title = "Self-interstitial trapping by carbon complexes in + crystalline silicon", + author = "A. Mattoni and F. Bernardini and L. Colombo", + journal = "Phys. Rev. B", + volume = "66", + number = "19", + pages = "195214", + numpages = "6", + year = "2002", + month = nov, + doi = "10.1103/PhysRevB.66.195214", + publisher = "American Physical Society", + notes = "c in c-si, diffusion, interstitial configuration + + links", +} @Article{leung99, - title = {Calculations of Silicon Self-Interstitial Defects}, - author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and - Itoh, S. and Ihara, S. }, - journal = {Phys. Rev. Lett.}, - volume = {83}, - number = {12}, - pages = {2351--2354}, - numpages = {3}, - year = {1999}, - month = {Sep}, - doi = {10.1103/PhysRevLett.83.2351}, - publisher = {American Physical Society}, - notes = {nice images of the defects} -} - -@Article{PhysRevB.50.7439, - title = {Identification of the migration path of interstitial carbon - in silicon}, - author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos}, - journal = {Phys. Rev. B}, - volume = {50}, - number = {11}, - pages = {7439--7442}, - numpages = {3}, - year = {1994}, - month = {Sep}, - doi = {10.1103/PhysRevB.50.7439}, - publisher = {American Physical Society}, - notes = {carbon interstitial migration path shown, 001 c-si dumbbell} -} - -% experimental stuff - interstitials + title = "Calculations of Silicon Self-Interstitial Defects", + author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S. + Itoh and S. Ihara", + journal = "Phys. Rev. Lett.", + volume = "83", + number = "12", + pages = "2351--2354", + numpages = "3", + year = "1999", + month = sep, + doi = "10.1103/PhysRevLett.83.2351", + publisher = "American Physical Society", + notes = "nice images of the defects", +} + +@Article{capazd94, + title = "Identification of the migration path of interstitial + carbon in silicon", + author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "50", + number = "11", + pages = "7439--7442", + numpages = "3", + year = "1994", + month = sep, + doi = "10.1103/PhysRevB.50.7439", + publisher = "American Physical Society", + notes = "carbon interstitial migration path shown, 001 c-si + dumbbell", +} + +@Article{car84, + title = "Microscopic Theory of Atomic Diffusion Mechanisms in + Silicon", + author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and + Sokrates T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "52", + number = "20", + pages = "1814--1817", + numpages = "3", + year = "1984", + month = may, + doi = "10.1103/PhysRevLett.52.1814", + publisher = "American Physical Society", + notes = "microscopic theory diffusion silicon dft migration + path formation", +} + +@Article{kelires97, + title = "Short-range order, bulk moduli, and physical trends in + c-$Si1-x$$Cx$ alloys", + author = "P. C. Kelires", + journal = "Phys. Rev. B", + volume = "55", + number = "14", + pages = "8784--8787", + numpages = "3", + year = "1997", + month = apr, + doi = "10.1103/PhysRevB.55.8784", + publisher = "American Physical Society", + notes = "c strained si, montecarlo md, bulk moduli, next + neighbour dist", +} + +@Article{kelires95, + title = "Monte Carlo Studies of Ternary Semiconductor Alloys: + Application to the $Si1-x-yGexCy$ System", + author = "P. C. Kelires", + journal = "Phys. Rev. Lett.", + volume = "75", + number = "6", + pages = "1114--1117", + numpages = "3", + year = "1995", + month = aug, + doi = "10.1103/PhysRevLett.75.1114", + publisher = "American Physical Society", + notes = "mc md, strain compensation in si ge by c insertion", +} @Article{watkins76, - title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon}, - author = {G. D. Watkins and K. L. Brower}, - journal = {Phys. Rev. Lett.}, - volume = {36}, - number = {22}, - pages = {1329--1332}, - numpages = {3}, - year = {1976}, - month = {May}, - doi = {10.1103/PhysRevLett.36.1329}, - publisher = {American Physical Society}, - notes = {epr observations of 100 interstitial carbon atom in silicon} + title = "{EPR} Observation of the Isolated Interstitial Carbon + Atom in Silicon", + author = "G. D. Watkins and K. L. Brower", + journal = "Phys. Rev. Lett.", + volume = "36", + number = "22", + pages = "1329--1332", + numpages = "3", + year = "1976", + month = may, + doi = "10.1103/PhysRevLett.36.1329", + publisher = "American Physical Society", + notes = "epr observations of 100 interstitial carbon atom in + silicon", } @Article{song90, - title = {EPR identification of the single-acceptor state of interstitial carbon in silicon}, - author = {L. W. Song, G. D. Watkins}, - journal = {Phys. Rev. B}, - volume = {42}, - number = {9}, - pages = {5759--5764}, - numpages = {5}, - year = {1990}, - month = {Sep}, - doi = {10.1103/PhysRevB.42.5759}, - publisher = {American Physical Society} + title = "{EPR} identification of the single-acceptor state of + interstitial carbon in silicon", + author = "G. D. Watkins L. W. Song", + journal = "Phys. Rev. B", + volume = "42", + number = "9", + pages = "5759--5764", + numpages = "5", + year = "1990", + month = sep, + doi = "10.1103/PhysRevB.42.5759", + publisher = "American Physical Society", } -% experimental stuff - strained silicon - @Article{strane96, - title = {Carbon incorporation into Si at high concentrations - by ion implantation and solid phase epitaxy}, - author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux, - J.K. Watanabe, J. W. Mayer}, - journal = {J. Appl. Phys.}, - volume = {79}, - pages = {637}, - year = {1996}, - month = {January}, - doi = {10.1063/1.360806}, - notes = {strained silicon, carbon supersaturation} + title = "Carbon incorporation into Si at high concentrations by + ion implantation and solid phase epitaxy", + author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T. + Picraux and J. K. Watanabe and J. W. Mayer", + journal = "J. Appl. Phys.", + volume = "79", + pages = "637", + year = "1996", + month = jan, + doi = "10.1063/1.360806", + notes = "strained silicon, carbon supersaturation", +} + +@Article{laveant2002, + title = "Epitaxy of carbon-rich silicon with {MBE}", + author = "P. Laveant and G. Gerth and P. Werner and U. + G{\"o}sele", + journal = "Materials Science and Engineering B", + volume = "89", + number = "1-3", + pages = "241--245", + keywords = "Growth; Epitaxy; MBE; Carbon; Silicon", + notes = "low c in si, tensile stress to compensate compressive + stress, avoid sic precipitation", +} + +@Article{werner97, + author = "P. Werner and S. Eichler and G. Mariani and R. + K{\"{o}}gler and W. Skorupa", + title = "Investigation of {C}[sub x]Si defects in {C} implanted + silicon by transmission electron microscopy", + publisher = "AIP", + year = "1997", + journal = "Applied Physics Letters", + volume = "70", + number = "2", + pages = "252--254", + keywords = "silicon; ion implantation; carbon; crystal defects; + transmission electron microscopy; annealing; positron + annihilation; secondary ion mass spectroscopy; buried + layers; precipitation", + URL = "http://link.aip.org/link/?APL/70/252/1", + doi = "10.1063/1.118381", + notes = "si-c complexes, agglomerate, sic in si matrix, sic + precipitate", } -% properties sic +@Article{strane94, + author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. + Picraux and J. K. Watanabe and J. W. Mayer", + collaboration = "", + title = "Precipitation and relaxation in strained Si[sub 1 - + y]{C}[sub y]/Si heterostructures", + publisher = "AIP", + year = "1994", + journal = "Journal of Applied Physics", + volume = "76", + number = "6", + pages = "3656--3668", + keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", + URL = "http://link.aip.org/link/?JAP/76/3656/1", + doi = "10.1063/1.357429", + notes = "strained si-c to 3c-sic, carbon nucleation + refs", +} @Article{edgar92, - title = {Prospects for device implementation of wide band gap semiconductors}, - author = {J. H. Edgar}, - journal = {J. Mater. Res.}, - volume = {7}, - pages = {235}, - year = {1992}, - month = {January}, - doi = {10.1557/JMR.1992.0235}, - notes = {properties wide band gap semiconductor, sic polytypes} -} - -% my own publications - -@article{zirkelbach2007, - title = {Monte Carlo simulation study of a selforganisation process - leading to ordered precipitate structures}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. Instr. and Meth. B}, - volume = {257}, - number = {1--2}, - pages = {75--79}, - numpages = {5}, - year = {2007}, - month = {Apr}, - doi = {doi:10.1016/j.nimb.2006.12.118}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -@article{zirkelbach2006, - title = {Monte-Carlo simulation study of the self-organization of nanometric - amorphous precipitates in regular arrays during ion irradiation}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. Instr. and Meth. B}, - volume = {242}, - number = {1--2}, - pages = {679--682}, - numpages = {4}, - year = {2006}, - month = {Jan}, - doi = {doi:10.1016/j.nimb.2005.08.162}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -@article{zirkelbach2005, - title = {Modelling of a selforganization process leading to periodic arrays - of nanometric amorphous precipitates by ion irradiation}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Comp. Mater. Sci.}, - volume = {33}, - number = {1--3}, - pages = {310--316}, - numpages = {7}, - year = {2005}, - month = {Apr}, - doi = {doi:10.1016/j.commatsci.2004.12.016}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -% the one of my boss + title = "Prospects for device implementation of wide band gap + semiconductors", + author = "J. H. Edgar", + journal = "J. Mater. 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