X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=a17cd642c451d0cd72bebbeb19a02023369465d1;hp=66641a677ad4fd035cd4850244c7a0daac785c4d;hb=bf5f19538e8f53f5385c561ebf723eb5014e8264;hpb=22bbeaa80fc6a1d531f14e0ae11da66ba3a74f9a diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 66641a6..a17cd64 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -196,7 +196,7 @@ @Article{batra87, title = "Molecular-dynamics study of self-interstitials in silicon", - author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}", + author = "Inder P. Batra and Farid F. Abraham and S. Ciraci", journal = "Phys. Rev. B", volume = "35", number = "18", @@ -294,7 +294,8 @@ Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes", - author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}", + author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la + Rubia", journal = "Phys. Rev. B", volume = "55", number = "21", @@ -324,7 +325,8 @@ @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", - author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}", + author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R. + Corrales", journal = "Phys. Rev. B", volume = "64", number = "24", @@ -373,7 +375,7 @@ @Article{capazd94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}", + author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -486,7 +488,8 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}", + author = "P. Laveant and G. Gerth and P. Werner and U. + G{\"o}sele", journal = "Materials Science and Engineering B", volume = "89", number = "1-3", @@ -552,8 +555,8 @@ @Article{zirkelbach2007, title = "Monte Carlo simulation study of a selforganisation process leading to ordered precipitate structures", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Nucl. Instr. and Meth. B", volume = "257", number = "1--2", @@ -570,8 +573,8 @@ title = "Monte-Carlo simulation study of the self-organization of nanometric amorphous precipitates in regular arrays during ion irradiation", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Nucl. Instr. and Meth. B", volume = "242", number = "1--2", @@ -588,8 +591,8 @@ title = "Modelling of a selforganization process leading to periodic arrays of nanometric amorphous precipitates by ion irradiation", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Comp. Mater. Sci.", volume = "33", number = "1--3", @@ -602,6 +605,56 @@ NETHERLANDS", } +@Article{lindner99, + title = "Controlling the density distribution of Si{C} + nanocrystals for the ion beam synthesis of buried Si{C} + layers in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "147", + number = "1-4", + pages = "249--255", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00598-9", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169", + author = "J. K. N. Lindner and B. Stritzker", + notes = "two-step implantation process", +} + +@Article{lindner99_2, + title = "Mechanisms in the ion beam synthesis of Si{C} layers + in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "148", + number = "1-4", + pages = "528--533", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00787-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", + author = "J. K. N. Lindner and B. Stritzker", +} + +@Article{lindner01, + title = "Ion beam synthesis of buried Si{C} layers in silicon: + Basic physical processes", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "178", + number = "1-4", + pages = "44--54", + year = "2001", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(01)00504-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", + author = "Jörg K. N. Lindner", +} + @Article{lindner02, title = "High-dose carbon implantations into silicon: fundamental studies for new technological tricks", @@ -863,3 +916,165 @@ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc", author = "Yu. M. Tairov and V. F. Tsvetkov", } + +@Article{powell87, + author = "J. Anthony Powell and Lawrence G. Matus and Maria A. + Kuczmarski", + title = "Growth and Characterization of Cubic Si{C} + Single-Crystal Films on Si", + publisher = "ECS", + year = "1987", + journal = "Journal of The Electrochemical Society", + volume = "134", + number = "6", + pages = "1558--1565", + keywords = "semiconductor materials; silicon compounds; carbon + compounds; crystal morphology; electron mobility", + URL = "http://link.aip.org/link/?JES/134/1558/1", + doi = "10.1149/1.2100708", + notes = "blue light emitting diodes (led)", +} + +@Article{kimoto93, + author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo + and Hiroyuki Matsunami", + title = "Growth mechanism of 6{H}-Si{C} in step-controlled + epitaxy", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "73", + number = "2", + pages = "726--732", + keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE + RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL + VAPOR DEPOSITION", + URL = "http://link.aip.org/link/?JAP/73/726/1", + doi = "10.1063/1.353329", +} + +@Article{powell90, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of improved quality 3{C}-Si{C} films on + 6{H}-Si{C} substrates", + publisher = "AIP", + year = "1990", + journal = "Applied Physics Letters", + volume = "56", + number = "14", + pages = "1353--1355", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON + MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR + PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1353/1", + doi = "10.1063/1.102512", +} + +@Article{fissel95, + title = "Epitaxial growth of Si{C} thin films on Si-stabilized + [alpha]-Si{C}(0001) at low temperatures by solid-source + molecular beam epitaxy", + journal = "Journal of Crystal Growth", + volume = "154", + number = "1-2", + pages = "72--80", + year = "1995", + notes = "solid source mbe", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)00170-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", + author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter + and W. Richter", +} + +@Article{borders71, + author = "J. A. Borders and S. T. Picraux and W. Beezhold", + collaboration = "", + title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION} + {IMPLANTATION}", + publisher = "AIP", + year = "1971", + journal = "Applied Physics Letters", + volume = "18", + number = "11", + pages = "509--511", + URL = "http://link.aip.org/link/?APL/18/509/1", + notes = "first time sic by ibs", + doi = "10.1063/1.1653516", +} + +@Article{reeson87, + author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and + J. Davis and G. E. Celler", + collaboration = "", + title = "Formation of buried layers of beta-Si{C} using ion + beam synthesis and incoherent lamp annealing", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "51", + number = "26", + pages = "2242--2244", + keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION + IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS", + URL = "http://link.aip.org/link/?APL/51/2242/1", + doi = "10.1063/1.98953", + notes = "nice tem images, sic by ibs", +} + +@Article{scace59, + author = "R. I. Scace and G. A. Slack", + collaboration = "", + title = "Solubility of Carbon in Silicon and Germanium", + publisher = "AIP", + year = "1959", + journal = "The Journal of Chemical Physics", + volume = "30", + number = "6", + pages = "1551--1555", + URL = "http://link.aip.org/link/?JCP/30/1551/1", + doi = "10.1063/1.1730236", + notes = "solubility of c in c-si", +} + +@Article{cowern96, + author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and + F. W. Saris and W. Vandervorst", + collaboration = "", + title = "Role of {C} and {B} clusters in transient diffusion of + {B} in silicon", + publisher = "AIP", + year = "1996", + journal = "Applied Physics Letters", + volume = "68", + number = "8", + pages = "1150--1152", + keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING; + DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS; + SILICON", + URL = "http://link.aip.org/link/?APL/68/1150/1", + doi = "10.1063/1.115706", + notes = "suppression of transient enhanced diffusion (ted)", +} + +@Article{stolk95, + title = "Implantation and transient boron diffusion: the role + of the silicon self-interstitial", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "96", + number = "1-2", + pages = "187--195", + year = "1995", + note = "Selected Papers of the Tenth International Conference + on Ion Implantation Technology (IIT '94)", + ISSN = "0168-583X", + doi = "DOI: 10.1016/0168-583X(94)00481-1", + URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c", + author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham + and J. M. Poate", +}