X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=a4eb40881c0c5870c7c66c44dfb465cb51ea8fd9;hp=c55a0e126b55121ae014c7b6f3277c4987d33552;hb=bbe0e9b171831786e4df21dd3a37abad30f331bb;hpb=63f584cf2855650f0a8ff2bdebe4f33cb9099378

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index c55a0e1..a4eb408 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -40,6 +40,37 @@
   notes =        "derivation of albe bond order formalism",
 }
 
+@Article{newman65,
+  title =        "Vibrational absorption of carbon in silicon",
+  journal =      "Journal of Physics and Chemistry of Solids",
+  volume =       "26",
+  number =       "2",
+  pages =        "373--379",
+  year =         "1965",
+  note =         "",
+  ISSN =         "0022-3697",
+  doi =          "DOI: 10.1016/0022-3697(65)90166-6",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667",
+  author =       "R. C. Newman and J. B. Willis",
+  notes =        "c impurity dissolved as substitutional c in si",
+}
+
+@Article{baker68,
+  author =       "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C.
+                 Buschert",
+  collaboration = "",
+  title =        "Effect of Carbon on the Lattice Parameter of Silicon",
+  publisher =    "AIP",
+  year =         "1968",
+  journal =      "Journal of Applied Physics",
+  volume =       "39",
+  number =       "9",
+  pages =        "4365--4368",
+  URL =          "http://link.aip.org/link/?JAP/39/4365/1",
+  doi =          "10.1063/1.1656977",
+  notes =        "lattice contraction due to subst c",
+}
+
 @Article{bean71,
   title =        "The solubility of carbon in pulled silicon crystals",
   journal =      "Journal of Physics and Chemistry of Solids",
@@ -981,6 +1012,39 @@
                  stress, avoid sic precipitation",
 }
 
+@Article{foell77,
+  title =        "The formation of swirl defects in silicon by
+                 agglomeration of self-interstitials",
+  journal =      "Journal of Crystal Growth",
+  volume =       "40",
+  number =       "1",
+  pages =        "90--108",
+  year =         "1977",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(77)90034-3",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb",
+  author =       "H. Föll and U. Gösele and B. O. Kolbesen",
+  notes =        "b-swirl: si + c interstitial agglomerates, c-si
+                 agglomerate",
+}
+
+@Article{foell81,
+  title =        "Microdefects in silicon and their relation to point
+                 defects",
+  journal =      "Journal of Crystal Growth",
+  volume =       "52",
+  number =       "Part 2",
+  pages =        "907--916",
+  year =         "1981",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(81)90397-3",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078",
+  author =       "H. Föll and U. Gösele and B. O. Kolbesen",
+  notes =        "swirl review",
+}
+
 @Article{werner97,
   author =       "P. Werner and S. Eichler and G. Mariani and R.
                  K{\"{o}}gler and W. Skorupa",
@@ -1039,6 +1103,25 @@
   notes =        "c diffusion in si, kick out mechnism",
 }
 
+@Article{kalejs84,
+  author =       "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele",
+  collaboration = "",
+  title =        "Self-interstitial enhanced carbon diffusion in
+                 silicon",
+  publisher =    "AIP",
+  year =         "1984",
+  journal =      "Applied Physics Letters",
+  volume =       "45",
+  number =       "3",
+  pages =        "268--269",
+  keywords =     "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS;
+                 CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH
+                 TEMPERATURE; IMPURITIES",
+  URL =          "http://link.aip.org/link/?APL/45/268/1",
+  doi =          "10.1063/1.95167",
+  notes =        "c diffusion due to si self-interstitials",
+}
+
 @Article{strane94,
   author =       "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
                  Picraux and J. K. Watanabe and J. W. Mayer",
@@ -2264,6 +2347,69 @@
   notes =        "solubility of c in c-si, si-c phase diagram",
 }
 
+@Article{hofker74,
+  author =       "W. Hofker and H. Werner and D. Oosthoek and N.
+                 Koeman",
+  affiliation =  "N. V. Philips' Gloeilampenfabrieken Philips Research
+                 Laboratories Eindhoven Netherlands Eindhoven
+                 Netherlands",
+  title =        "Boron implantations in silicon: {A} comparison of
+                 charge carrier and boron concentration profiles",
+  journal =      "Applied Physics A: Materials Science \&
+                 Processing",
+  publisher =    "Springer Berlin / Heidelberg",
+  ISSN =         "0947-8396",
+  keyword =      "Physics and Astronomy",
+  pages =        "125--133",
+  volume =       "4",
+  issue =        "2",
+  URL =          "http://dx.doi.org/10.1007/BF00884267",
+  note =         "10.1007/BF00884267",
+  year =         "1974",
+  notes =        "first time ted (only for boron?)",
+}
+
+@Article{michel87,
+  author =       "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
+                 H. Kastl",
+  collaboration = "",
+  title =        "Rapid annealing and the anomalous diffusion of ion
+                 implanted boron into silicon",
+  publisher =    "AIP",
+  year =         "1987",
+  journal =      "Applied Physics Letters",
+  volume =       "50",
+  number =       "7",
+  pages =        "416--418",
+  keywords =     "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
+                 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
+                 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
+  URL =          "http://link.aip.org/link/?APL/50/416/1",
+  doi =          "10.1063/1.98160",
+  notes =        "ted of boron in si",
+}
+
+@Article{cowern90,
+  author =       "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
+                 Jos",
+  collaboration = "",
+  title =        "Transient diffusion of ion-implanted {B} in Si: Dose,
+                 time, and matrix dependence of atomic and electrical
+                 profiles",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Journal of Applied Physics",
+  volume =       "68",
+  number =       "12",
+  pages =        "6191--6198",
+  keywords =     "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
+                 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
+                 CRYSTALS; AMORPHIZATION",
+  URL =          "http://link.aip.org/link/?JAP/68/6191/1",
+  doi =          "10.1063/1.346910",
+  notes =        "ted of boron in si",
+}
+
 @Article{cowern96,
   author =       "N. E. B. Cowern and A. Cacciato and J. S. Custer and
                  F. W. Saris and W. Vandervorst",
@@ -4113,6 +4259,21 @@
   eprint =       "http://journals.cambridge.org/article_S194642740054367X",
 }
 
+@Article{newman61,
+  title =        "The diffusivity of carbon in silicon",
+  journal =      "Journal of Physics and Chemistry of Solids",
+  volume =       "19",
+  number =       "3-4",
+  pages =        "230--234",
+  year =         "1961",
+  note =         "",
+  ISSN =         "0022-3697",
+  doi =          "DOI: 10.1016/0022-3697(61)90032-4",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd",
+  author =       "R. C. Newman and J. Wakefield",
+  notes =        "diffusivity of substitutional c in si",
+}
+
 @Article{goesele85,
   author =       "U. Gösele",
   title =        "The Role of Carbon and Point Defects in Silicon",