X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=a76665019be181124c4b01ebd6b54a8c81666c33;hp=97c81b83117da95d3f4dc5a897f7b339a4811bec;hb=f316cc9ddb491de92198b606180c19aecfc88ddf;hpb=3ae2e137a3bddc16526469a817f32a9e86844ba0

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 97c81b8..a766650 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1952,6 +1952,23 @@
   notes =        "3c-sic on 6h-sic, cvd, reduced temperature",
 }
 
+@Article{kaneda87,
+  title =        "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
+                 properties of its p-n junction",
+  journal =      "Journal of Crystal Growth",
+  volume =       "81",
+  number =       "1-4",
+  pages =        "536--542",
+  year =         "1987",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(87)90449-0",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
+  author =       "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
+                 and Takao Tanaka",
+  notes =        "first time ssmbe of 3c-sic on 6h-sic",
+}
+
 @Article{fissel95,
   title =        "Epitaxial growth of Si{C} thin films on Si-stabilized
                  [alpha]-Si{C}(0001) at low temperatures by solid-source
@@ -2041,6 +2058,58 @@
                  ideas",
 }
 
+@Article{edelman76,
+  author =       "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
+                 and E. V. Lubopytova",
+  title =        "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
+                 by ion implantation",
+  publisher =    "Taylor \& Francis",
+  year =         "1976",
+  journal =      "Radiation Effects",
+  volume =       "29",
+  number =       "1",
+  pages =        "13--15",
+  URL =          "http://www.informaworld.com/10.1080/00337577608233477",
+  notes =        "3c-sic for different temperatures, amorphous, poly,
+                 single crystalline",
+}
+
+@Article{akimchenko80,
+  author =       "I. P. Akimchenko and K. V. Kisseleva and V. V. Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
+  title =        "Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions",
+  publisher =    "Taylor \& Francis",
+  year =         "1980",
+  journal =      "Radiation Effects",
+  volume =       "48",
+  number =       "1",
+  pages =        "7",
+  URL =          "http://www.informaworld.com/10.1080/00337578008209220",
+  notes =        "3c-sic nucleation by thermal spikes",
+}
+
+@Article{martin90,
+  author =       "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
+                 and M. Olivier and A. M. Papon and G. Rolland",
+  collaboration = "",
+  title =        "High-temperature ion beam synthesis of cubic Si{C}",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Journal of Applied Physics",
+  volume =       "67",
+  number =       "6",
+  pages =        "2908--2912",
+  keywords =     "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
+                 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
+                 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
+                 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
+                 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
+                 REACTIONS; MONOCRYSTALS",
+  URL =          "http://link.aip.org/link/?JAP/67/2908/1",
+  doi =          "10.1063/1.346092",
+  notes =        "triple energy implantation to overcome high annealing
+                 temepratures",
+}
+
 @Article{reeson87,
   author =       "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
                  J. Davis and G. E. Celler",
@@ -2580,7 +2649,9 @@
                  ENERGY",
   URL =          "http://link.aip.org/link/?APL/62/3336/1",
   doi =          "10.1063/1.109063",
-  notes =        "interfacial energy of cubic sic and si",
+  notes =        "interfacial energy of cubic sic and si, si self
+                 interstitials necessary for precipitation, volume
+                 decrease, high interface energy",
 }
 
 @Article{chaussende08,
@@ -3907,3 +3978,29 @@
   notes =        "h incorporation on si surface, lower surface
                  mobility",
 }
+
+@Article{newman85,
+  author =       "Ronald C. Newman",
+  title =        "Carbon in Crystalline Silicon",
+  journal =      "MRS Online Proceedings Library",
+  volume =       "59",
+  number =       "",
+  pages =        "403",
+  year =         "1985",
+  doi =          "10.1557/PROC-59-403",
+  URL =          "http://dx.doi.org/10.1557/PROC-59-403",
+  eprint =       "http://journals.cambridge.org/article_S194642740054367X",
+}
+
+@Article{goesele85,
+  author =       "U. Gösele",
+  title =        "The Role of Carbon and Point Defects in Silicon",
+  journal =      "MRS Online Proceedings Library",
+  volume =       "59",
+  number =       "",
+  pages =        "419",
+  year =         "1985",
+  doi =          "10.1557/PROC-59-419",
+  URL =          "http://dx.doi.org/10.1557/PROC-59-419",
+  eprint =       "http://journals.cambridge.org/article_S1946427400543681",
+}