X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=a79bb6765e153d7dbc881393b4ed9e1cf8bd13f0;hp=18a2e3994ca81618cf0e2f5690aa0052f960c628;hb=ca9d33ccbdd983e1c6290457825953e0ee6220d0;hpb=633db250e42a5724c851597ee938cfa93df0665b diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 18a2e39..a79bb67 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -2,411 +2,5129 @@ % bibliography database % -% molecular dynamics: basics / potential - -@article{albe_sic_pot, - author = {Paul Erhart and Karsten Albe}, - title = {Analytical potential for atomistic simulations of silicon, carbon, - and silicon carbide}, - publisher = {APS}, - year = {2005}, - journal = {Phys. Rev. B}, - volume = {71}, - number = {3}, - eid = {035211}, - numpages = {14}, - pages = {035211}, - notes = {alble reparametrization, analytical bond oder potential (ABOP)}, - keywords = {silicon; elemental semiconductors; carbon; silicon compounds; - wide band gap semiconductors; elasticity; enthalpy; - point defects; crystallographic shear; atomic forces}, - url = {http://link.aps.org/abstract/PRB/v71/e035211}, - doi = {10.1103/PhysRevB.71.035211} +@Article{schroedinger26, + author = "E. Schrödinger", + title = "Quantisierung als Eigenwertproblem", + journal = "Ann. Phys. (Leipzig)", + volume = "384", + number = "4", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19263840404", + doi = "10.1002/andp.19263840404", + pages = "361--376", + year = "1926", +} + +@Article{bloch29, + author = "Felix Bloch", + affiliation = "Institut d. Universität f. theor. Physik Leipzig", + title = "Über die Quantenmechanik der Elektronen in + Kristallgittern", + journal = "Z. Phys.", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0939-7922", + keyword = "Physics and Astronomy", + pages = "555--600", + volume = "52", + issue = "7", + URL = "http://dx.doi.org/10.1007/BF01339455", + note = "10.1007/BF01339455", + year = "1929", +} + +@Article{albe_sic_pot, + author = "Paul Erhart and Karsten Albe", + title = "Analytical potential for atomistic simulations of + silicon, carbon, and silicon carbide", + publisher = "APS", + year = "2005", + journal = "Phys. Rev. B", + volume = "71", + number = "3", + eid = "035211", + numpages = "14", + pages = "035211", + notes = "alble reparametrization, analytical bond oder + potential (ABOP)", + keywords = "silicon; elemental semiconductors; carbon; silicon + compounds; wide band gap semiconductors; elasticity; + enthalpy; point defects; crystallographic shear; atomic + forces", + URL = "http://link.aps.org/abstract/PRB/v71/e035211", + doi = "10.1103/PhysRevB.71.035211", +} + +@Article{erhart04, + title = "The role of thermostats in modeling vapor phase + condensation of silicon nanoparticles", + journal = "Appl. Surf. Sci.", + volume = "226", + number = "1-3", + pages = "12--18", + year = "2004", + note = "EMRS 2003 Symposium F, Nanostructures from Clusters", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2003.11.003", + URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738", + author = "Paul Erhart and Karsten Albe", } @Article{albe2002, - title = {Modeling the metal-semiconductor interaction: - Analytical bond-order potential for platinum-carbon}, - author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.}, - journal = {Phys. Rev. B}, - volume = {65}, - number = {19}, - pages = {195124}, - numpages = {11}, - year = {2002}, - month = {May}, - doi = {10.1103/PhysRevB.65.195124}, - publisher = {American Physical Society}, - notes = {derivation of albe bond order formalism}, + title = "Modeling the metal-semiconductor interaction: + Analytical bond-order potential for platinum-carbon", + author = "Karsten Albe and Kai Nordlund and Robert S. Averback", + journal = "Phys. Rev. B", + volume = "65", + number = "19", + pages = "195124", + numpages = "11", + year = "2002", + month = may, + doi = "10.1103/PhysRevB.65.195124", + publisher = "American Physical Society", + notes = "derivation of albe bond order formalism", +} + +@Article{newman65, + title = "Vibrational absorption of carbon in silicon", + journal = "J. Phys. Chem. Solids", + volume = "26", + number = "2", + pages = "373--379", + year = "1965", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(65)90166-6", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667", + author = "R. C. Newman and J. B. Willis", + notes = "c impurity dissolved as substitutional c in si", +} + +@Article{baker68, + author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C. + Buschert", + collaboration = "", + title = "Effect of Carbon on the Lattice Parameter of Silicon", + publisher = "AIP", + year = "1968", + journal = "J. Appl. Phys.", + volume = "39", + number = "9", + pages = "4365--4368", + URL = "http://link.aip.org/link/?JAP/39/4365/1", + doi = "10.1063/1.1656977", + notes = "lattice contraction due to subst c", +} + +@Article{bean71, + title = "The solubility of carbon in pulled silicon crystals", + journal = "J. Phys. Chem. Solids", + volume = "32", + number = "6", + pages = "1211--1219", + year = "1971", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/S0022-3697(71)80179-8", + URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5", + author = "A. R. Bean and R. C. Newman", + notes = "experimental solubility data of carbon in silicon", +} + +@Article{capano97, + author = "M. A. Capano and R. J. Trew", + title = "Silicon Carbide Electronic Materials and Devices", + journal = "MRS Bull.", + volume = "22", + pages = "19", + year = "1997", +} + +@Article{fischer90, + author = "G. R. Fisher and P. Barnes", + title = "Towards a unified view of polytypism in silicon + carbide", + journal = "Philos. Mag. B", + volume = "61", + pages = "217--236", + year = "1990", + notes = "sic polytypes", +} + +@Article{koegler03, + author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and + A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C. + Serre and A. Perez-Rodriguez", + title = "Synthesis of nano-sized Si{C} precipitates in Si by + simultaneous dual-beam implantation of {C}+ and Si+ + ions", + journal = "Appl. Phys. A", + volume = "76", + pages = "827--835", + month = mar, + year = "2003", + URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/", + notes = "dual implantation, sic prec enhanced by vacancies, + precipitation by interstitial and substitutional + carbon, both mechanisms explained + refs", +} + +@Article{skorupa96, + title = "Carbon-mediated effects in silicon and in + silicon-related materials", + journal = "Mater. Chem. Phys.", + volume = "44", + number = "2", + pages = "101--143", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/0254-0584(95)01673-I", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982", + author = "W. Skorupa and R. A. Yankov", + notes = "review of silicon carbon compound", +} + +@Book{laplace, + author = "P. S. de Laplace", + title = "Th\'eorie analytique des probabilit\'es", + series = "Oeuvres Compl\`etes de Laplace", + volume = "VII", + publisher = "Gauthier-Villars", + year = "1820", +} + +@Article{mattoni2007, + author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}", + title = "{Atomistic modeling of brittleness in covalent + materials}", + journal = "Phys. Rev. B", + year = "2007", + month = dec, + volume = "76", + number = "22", + pages = "224103", + doi = "10.1103/PhysRevB.76.224103", + notes = "adopted tersoff potential for Si, C, Ge ad SiC; + longe(r)-range-interactions, brittle propagation of + fracture, more available potentials, universal energy + relation (uer), minimum range model (mrm)", +} + +@Article{balamane92, + title = "Comparative study of silicon empirical interatomic + potentials", + author = "H. Balamane and T. Halicioglu and W. A. Tiller", + journal = "Phys. Rev. B", + volume = "46", + number = "4", + pages = "2250--2279", + numpages = "29", + year = "1992", + month = jul, + doi = "10.1103/PhysRevB.46.2250", + publisher = "American Physical Society", + notes = "comparison of classical potentials for si", } @Article{koster2002, - title = {Stress relaxation in $a-Si$ induced by ion bombardment}, - author = {M. Koster, H. M. Urbassek}, - journal = {Phys. Rev. B}, - volume = {62}, - number = {16}, - pages = {11219--11224}, - numpages = {5}, - year = {2000}, - month = {Oct}, - doi = {10.1103/PhysRevB.62.11219}, - publisher = {American Physical Society}, - notes = {virial derivation for 3-body tersoff potential} + title = "Stress relaxation in $a-Si$ induced by ion + bombardment", + author = "H. M. Urbassek M. Koster", + journal = "Phys. Rev. B", + volume = "62", + number = "16", + pages = "11219--11224", + numpages = "5", + year = "2000", + month = oct, + doi = "10.1103/PhysRevB.62.11219", + publisher = "American Physical Society", + notes = "virial derivation for 3-body tersoff potential", } @Article{breadmore99, - title = {Direct simulation of ion-beam-induced stressing - and amorphization of silicon}, - author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen}, - journal = {Phys. Rev. B}, - volume = {60}, - number = {18}, - pages = {12610--12616}, - numpages = {6}, - year = {1999}, - month = {Nov}, - doi = {10.1103/PhysRevB.60.12610}, - publisher = {American Physical Society}, - notes = {virial derivation for 3-body tersoff potential} + title = "Direct simulation of ion-beam-induced stressing and + amorphization of silicon", + author = "N. Gr\o{}nbech-Jensen K. M. Beardmore", + journal = "Phys. Rev. B", + volume = "60", + number = "18", + pages = "12610--12616", + numpages = "6", + year = "1999", + month = nov, + doi = "10.1103/PhysRevB.60.12610", + publisher = "American Physical Society", + notes = "virial derivation for 3-body tersoff potential", +} + +@Article{nielsen83, + title = "First-Principles Calculation of Stress", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. Lett.", + volume = "50", + number = "9", + pages = "697--700", + numpages = "3", + year = "1983", + month = feb, + doi = "10.1103/PhysRevLett.50.697", + publisher = "American Physical Society", + notes = "generalization of virial theorem", +} + +@Article{nielsen85, + title = "Quantum-mechanical theory of stress and force", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. B", + volume = "32", + number = "6", + pages = "3780--3791", + numpages = "11", + year = "1985", + month = sep, + doi = "10.1103/PhysRevB.32.3780", + publisher = "American Physical Society", + notes = "dft virial stress and forces", +} + +@Article{moissan04, + author = "Henri Moissan", + title = "Nouvelles recherches sur la météorité de Cañon + Diablo", + journal = "C. R. Acad. Sci.", + volume = "139", + pages = "773--786", + year = "1904", +} + +@Book{park98, + author = "Y. S. Park", + title = "Si{C} Materials and Devices", + publisher = "Academic Press", + address = "San Diego", + year = "1998", +} + +@Article{tsvetkov98, + author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and + Calvin H. Carter Jr. and D. Asbury", + title = "Si{C} Seeded Boule Growth", + journal = "Mater. Sci. Forum", + volume = "264-268", + pages = "3--8", + year = "1998", + notes = "modified lely process, micropipes", } @Article{verlet67, - title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules}, - author = {Verlet, Loup }, - journal = {Phys. Rev.}, - volume = {159}, - number = {1}, - pages = {98}, - year = {1967}, - month = {Jul}, - doi = {10.1103/PhysRev.159.98}, - publisher = {American Physical Society}, - notes = {velocity verlet integration algorithm equation of motion} -} - -@article{berendsen:3684, - author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren - and A. DiNola and J. R. Haak}, - collaboration = {}, - title = {Molecular dynamics with coupling to an external bath}, - publisher = {AIP}, - year = {1984}, - journal = {The Journal of Chemical Physics}, - volume = {81}, - number = {8}, - pages = {3684-3690}, - keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY; - COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS}, - url = {http://link.aip.org/link/?JCP/81/3684/1}, - doi = {10.1063/1.448118}, - notes = {berendsen thermostat barostat} -} - -% molecular dynamics: applications + title = "Computer {"}Experiments{"} on Classical Fluids. {I}. + Thermodynamical Properties of Lennard-Jones Molecules", + author = "Loup Verlet", + journal = "Phys. Rev.", + volume = "159", + number = "1", + pages = "98", + year = "1967", + month = jul, + doi = "10.1103/PhysRev.159.98", + publisher = "American Physical Society", + notes = "velocity verlet integration algorithm equation of + motion", +} + +@Article{berendsen84, + author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van + Gunsteren and A. DiNola and J. R. Haak", + collaboration = "", + title = "Molecular dynamics with coupling to an external bath", + publisher = "AIP", + year = "1984", + journal = "J. Chem. Phys.", + volume = "81", + number = "8", + pages = "3684--3690", + keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY; + COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS", + URL = "http://link.aip.org/link/?JCP/81/3684/1", + doi = "10.1063/1.448118", + notes = "berendsen thermostat barostat", +} + +@Article{huang95, + author = "Hanchen Huang and N M Ghoniem and J K Wong and M + Baskes", + title = "Molecular dynamics determination of defect energetics + in beta -Si{C} using three representative empirical + potentials", + journal = "Modell. Simul. Mater. Sci. Eng.", + volume = "3", + number = "5", + pages = "615--627", + URL = "http://stacks.iop.org/0965-0393/3/615", + notes = "comparison of tersoff, pearson and eam for defect + energetics in sic; (m)eam parameters for sic", + year = "1995", +} + +@Article{brenner89, + title = "Relationship between the embedded-atom method and + Tersoff potentials", + author = "Donald W. Brenner", + journal = "Phys. Rev. Lett.", + volume = "63", + number = "9", + pages = "1022", + numpages = "1", + year = "1989", + month = aug, + doi = "10.1103/PhysRevLett.63.1022", + publisher = "American Physical Society", + notes = "relation of tersoff and eam potential", +} @Article{batra87, - title = {Molecular-dynamics study of self-interstitials in silicon}, - author = {Inder P. Batra, Farid F. Abraham, S. Ciraci}, - journal = {Phys. Rev. B}, - volume = {35}, - number = {18}, - pages = {9552--9558}, - numpages = {6}, - year = {1987}, - month = {Jun}, - doi = {10.1103/PhysRevB.35.9552}, - publisher = {American Physical Society}, - notes = {selft-interstitials in silicon, stillinger-weber, - calculation of defect formation energy, defect interstitial types} + title = "Molecular-dynamics study of self-interstitials in + silicon", + author = "Inder P. Batra and Farid F. Abraham and S. Ciraci", + journal = "Phys. Rev. B", + volume = "35", + number = "18", + pages = "9552--9558", + numpages = "6", + year = "1987", + month = jun, + doi = "10.1103/PhysRevB.35.9552", + publisher = "American Physical Society", + notes = "selft-interstitials in silicon, stillinger-weber, + calculation of defect formation energy, defect + interstitial types", } @Article{schober89, - title = {Extended interstitials in silicon and germanium}, - author = {H. R. Schober}, - journal = {Phys. Rev. B}, - volume = {39}, - number = {17}, - pages = {13013--13015}, - numpages = {2}, - year = {1989}, - month = {Jun}, - doi = {10.1103/PhysRevB.39.13013}, - publisher = {American Physical Society}, - notes = {stillinger-weber silicon 110 stable and metastable dumbbell - configuration} + title = "Extended interstitials in silicon and germanium", + author = "H. R. Schober", + journal = "Phys. Rev. B", + volume = "39", + number = "17", + pages = "13013--13015", + numpages = "2", + year = "1989", + month = jun, + doi = "10.1103/PhysRevB.39.13013", + publisher = "American Physical Society", + notes = "stillinger-weber silicon 110 stable and metastable + dumbbell configuration", } -@Article{gao02, - title = {Cascade overlap and amorphization in $3C-SiC:$ - Defect accumulation, topological features, and disordering}, - author = {Gao, F. and Weber, W. J.}, - journal = {Phys. Rev. B}, - volume = {66}, - number = {2}, - pages = {024106}, - numpages = {10}, - year = {2002}, - month = {Jul}, - doi = {10.1103/PhysRevB.66.024106}, - publisher = {American Physical Society}, - note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified, - pair correlation of amorphous sic, md result analyze} +@Article{gao02a, + title = "Cascade overlap and amorphization in $3{C}-Si{C}:$ + Defect accumulation, topological features, and + disordering", + author = "F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "66", + number = "2", + pages = "024106", + numpages = "10", + year = "2002", + month = jul, + doi = "10.1103/PhysRevB.66.024106", + publisher = "American Physical Society", + notes = "sic intro, si cascade in 3c-sic, amorphization, + tersoff modified, pair correlation of amorphous sic, md + result analyze", } -@Article{batra87, - title = {SiC/Si heteroepitaxial growth}, - author = {M. Kitabatake}, - journal = {Thin Solid Films}, - volume = {369}, - pages = {257--264}, - numpages = {8}, - year = {2000}, - notes = {md simulation, sic si heteroepitaxy, mbe} +@Article{devanathan98, + title = "Computer simulation of a 10 ke{V} Si displacement + cascade in Si{C}", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "141", + number = "1-4", + pages = "118--122", + year = "1998", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00084-6", + author = "R. Devanathan and W. J. Weber and T. Diaz de la + Rubia", + notes = "modified tersoff short range potential, ab initio + 3c-sic", } -% tight binding +@Article{devanathan98_2, + title = "Displacement threshold energies in [beta]-Si{C}", + journal = "J. Nucl. Mater.", + volume = "253", + number = "1-3", + pages = "47--52", + year = "1998", + ISSN = "0022-3115", + doi = "DOI: 10.1016/S0022-3115(97)00304-8", + author = "R. Devanathan and T. Diaz de la Rubia and W. J. + Weber", + notes = "modified tersoff, ab initio, combined ab initio + tersoff", +} -@Article{tang97, - title = {Intrinsic point defects in crystalline silicon: - Tight-binding molecular dynamics studiesof self-diffusion, - interstitial-vacancy recombination, and formation volumes}, - author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia}, - journal = {Phys. Rev. B}, - volume = {55}, - number = {21}, - pages = {14279--14289}, - numpages = {10}, - year = {1997}, - month = {Jun}, - doi = {10.1103/PhysRevB.55.14279}, - publisher = {American Physical Society}, - notes = {si self interstitial, diffusion, tbmd} +@Article{kitabatake00, + title = "Si{C}/Si heteroepitaxial growth", + author = "M. Kitabatake", + journal = "Thin Solid Films", + volume = "369", + pages = "257--264", + numpages = "8", + year = "2000", + notes = "md simulation, sic si heteroepitaxy, mbe", } @Article{tang97, - title = {Tight-binding theory of native point defects in silicon}, - author = {L. Colombo}, - journal = {Annu. Rev. Mater. Res.}, - volume = {32}, - pages = {271--295}, - numpages = {25}, - year = {2002}, - doi = {10.1146/annurev.matsci.32.111601.103036}, - publisher = {Annual Reviews}, - notes = {si self interstitial, tbmd, virial stress} + title = "Intrinsic point defects in crystalline silicon: + Tight-binding molecular dynamics studies of + self-diffusion, interstitial-vacancy recombination, and + formation volumes", + author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la + Rubia", + journal = "Phys. Rev. B", + volume = "55", + number = "21", + pages = "14279--14289", + numpages = "10", + year = "1997", + month = jun, + doi = "10.1103/PhysRevB.55.14279", + publisher = "American Physical Society", + notes = "si self interstitial, diffusion, tbmd", +} + +@Article{johnson98, + author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la + Rubia", + collaboration = "", + title = "A kinetic Monte--Carlo study of the effective + diffusivity of the silicon self-interstitial in the + presence of carbon and boron", + publisher = "AIP", + year = "1998", + journal = "J. Appl. Phys.", + volume = "84", + number = "4", + pages = "1963--1967", + keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS; + CARBON ADDITIONS; BORON ADDITIONS; elemental + semiconductors; self-diffusion", + URL = "http://link.aip.org/link/?JAP/84/1963/1", + doi = "10.1063/1.368328", + notes = "kinetic monte carlo of si self interstitial + diffsuion", +} + +@Article{bar-yam84, + title = "Barrier to Migration of the Silicon + Self-Interstitial", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. Lett.", + volume = "52", + number = "13", + pages = "1129--1132", + numpages = "3", + year = "1984", + month = mar, + doi = "10.1103/PhysRevLett.52.1129", + publisher = "American Physical Society", + notes = "si self-interstitial migration barrier", +} + +@Article{bar-yam84_2, + title = "Electronic structure and total-energy migration + barriers of silicon self-interstitials", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "30", + number = "4", + pages = "1844--1852", + numpages = "8", + year = "1984", + month = aug, + doi = "10.1103/PhysRevB.30.1844", + publisher = "American Physical Society", +} + +@Article{bloechl93, + title = "First-principles calculations of self-diffusion + constants in silicon", + author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car + and D. B. Laks and W. Andreoni and S. T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "70", + number = "16", + pages = "2435--2438", + numpages = "3", + year = "1993", + month = apr, + doi = "10.1103/PhysRevLett.70.2435", + publisher = "American Physical Society", + notes = "si self int diffusion by ab initio md, formation + entropy calculations", +} + +@Article{munro99, + title = "Defect migration in crystalline silicon", + author = "Lindsey J. Munro and David J. Wales", + journal = "Phys. Rev. B", + volume = "59", + number = "6", + pages = "3969--3980", + numpages = "11", + year = "1999", + month = feb, + doi = "10.1103/PhysRevB.59.3969", + publisher = "American Physical Society", + notes = "eigenvector following method, vacancy and interstiial + defect migration mechanisms", +} + +@Article{colombo02, + title = "Tight-binding theory of native point defects in + silicon", + author = "L. Colombo", + journal = "Annu. Rev. Mater. Res.", + volume = "32", + pages = "271--295", + numpages = "25", + year = "2002", + doi = "10.1146/annurev.matsci.32.111601.103036", + publisher = "Annual Reviews", + notes = "si self interstitial, tbmd, virial stress", +} + +@Article{al-mushadani03, + title = "Free-energy calculations of intrinsic point defects in + silicon", + author = "O. K. Al-Mushadani and R. J. Needs", + journal = "Phys. Rev. B", + volume = "68", + number = "23", + pages = "235205", + numpages = "8", + year = "2003", + month = dec, + doi = "10.1103/PhysRevB.68.235205", + publisher = "American Physical Society", + notes = "formation energies of intrinisc point defects in + silicon, si self interstitials, free energy", +} + +@Article{mattsson08, + title = "Electronic surface error in the Si interstitial + formation energy", + author = "Ann E. Mattsson and Ryan R. Wixom and Rickard + Armiento", + journal = "Phys. Rev. B", + volume = "77", + number = "15", + pages = "155211", + numpages = "7", + year = "2008", + month = apr, + doi = "10.1103/PhysRevB.77.155211", + publisher = "American Physical Society", + notes = "si self interstitial formation energies by dft", +} + +@Article{goedecker02, + title = "A Fourfold Coordinated Point Defect in Silicon", + author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", + journal = "Phys. Rev. Lett.", + volume = "88", + number = "23", + pages = "235501", + numpages = "4", + year = "2002", + month = may, + doi = "10.1103/PhysRevLett.88.235501", + publisher = "American Physical Society", + notes = "first time ffcd, fourfold coordinated point defect in + silicon", +} + +@Article{sahli05, + title = "Ab initio molecular dynamics simulation of + self-interstitial diffusion in silicon", + author = "Beat Sahli and Wolfgang Fichtner", + journal = "Phys. Rev. B", + volume = "72", + number = "24", + pages = "245210", + numpages = "6", + year = "2005", + month = dec, + doi = "10.1103/PhysRevB.72.245210", + publisher = "American Physical Society", + notes = "si self int, diffusion, barrier height, voronoi + mapping applied", +} + +@Article{hobler05, + title = "Ab initio calculations of the interaction between + native point defects in silicon", + journal = "Mater. Sci. Eng., B", + volume = "124-125", + number = "", + pages = "368--371", + year = "2005", + note = "EMRS 2005, Symposium D - Materials Science and Device + Issues for Future Technologies", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2005.08.072", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4", + author = "G. Hobler and G. Kresse", + notes = "vasp intrinsic si defect interaction study, capture + radius", +} + +@Article{ma10, + title = "Ab initio study of self-diffusion in silicon over a + wide temperature range: Point defect states and + migration mechanisms", + author = "Shangyi Ma and Shaoqing Wang", + journal = "Phys. Rev. B", + volume = "81", + number = "19", + pages = "193203", + numpages = "4", + year = "2010", + month = may, + doi = "10.1103/PhysRevB.81.193203", + publisher = "American Physical Society", + notes = "si self interstitial diffusion + refs", +} + +@Article{posselt06, + title = "Atomistic simulations on the thermal stability of the + antisite pair in 3{C}- and 4{H}-Si{C}", + author = "M. Posselt and F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "73", + number = "12", + pages = "125206", + numpages = "8", + year = "2006", + month = mar, + doi = "10.1103/PhysRevB.73.125206", + publisher = "American Physical Society", } -% mixed +@Article{posselt08, + title = "Correlation between self-diffusion in Si and the + migration mechanisms of vacancies and + self-interstitials: An atomistic study", + author = "M. Posselt and F. Gao and H. Bracht", + journal = "Phys. Rev. B", + volume = "78", + number = "3", + pages = "035208", + numpages = "9", + year = "2008", + month = jul, + doi = "10.1103/PhysRevB.78.035208", + publisher = "American Physical Society", + notes = "si self-interstitial and vacancy diffusion, stillinger + weber and tersoff", +} @Article{gao2001, - title = {Ab initio and empirical-potential studies of defect properties - in $3C-SiC$ }, - author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales}, - journal = {Phys. Rev. B}, - volume = {64}, - number = {24}, - pages = {245208}, - numpages = {7}, - year = {2001}, - month = {Dec}, - doi = {10.1103/PhysRevB.64.245208}, - publisher = {American Physical Society}, - notes = {defects in 3c-sic} -} - -% ab initio + title = "Ab initio and empirical-potential studies of defect + properties in $3{C}-Si{C}$", + author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R. + Corrales", + journal = "Phys. Rev. B", + volume = "64", + number = "24", + pages = "245208", + numpages = "7", + year = "2001", + month = dec, + doi = "10.1103/PhysRevB.64.245208", + publisher = "American Physical Society", + notes = "defects in 3c-sic", +} + +@Article{gao02, + title = "Empirical potential approach for defect properties in + 3{C}-Si{C}", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "191", + number = "1-4", + pages = "487--496", + year = "2002", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(02)00600-6", + URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7", + author = "Fei Gao and William J. Weber", + keywords = "Empirical potential", + keywords = "Defect properties", + keywords = "Silicon carbide", + keywords = "Computer simulation", + notes = "sic potential, brenner type, like erhart/albe", +} + +@Article{gao04, + title = "Atomistic study of intrinsic defect migration in + 3{C}-Si{C}", + author = "Fei Gao and William J. Weber and M. Posselt and V. + Belko", + journal = "Phys. Rev. B", + volume = "69", + number = "24", + pages = "245205", + numpages = "5", + year = "2004", + month = jun, + doi = "10.1103/PhysRevB.69.245205", + publisher = "American Physical Society", + notes = "defect migration in sic", +} + +@Article{gao07, + author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and + W. J. Weber", + collaboration = "", + title = "Ab Initio atomic simulations of antisite pair recovery + in cubic silicon carbide", + publisher = "AIP", + year = "2007", + journal = "Appl. Phys. Lett.", + volume = "90", + number = "22", + eid = "221915", + numpages = "3", + pages = "221915", + keywords = "ab initio calculations; silicon compounds; antisite + defects; wide band gap semiconductors; molecular + dynamics method; density functional theory; + electron-hole recombination; photoluminescence; + impurities; diffusion", + URL = "http://link.aip.org/link/?APL/90/221915/1", + doi = "10.1063/1.2743751", +} + +@Article{mattoni2002, + title = "Self-interstitial trapping by carbon complexes in + crystalline silicon", + author = "A. Mattoni and F. Bernardini and L. Colombo", + journal = "Phys. Rev. B", + volume = "66", + number = "19", + pages = "195214", + numpages = "6", + year = "2002", + month = nov, + doi = "10.1103/PhysRevB.66.195214", + publisher = "American Physical Society", + notes = "c in c-si, diffusion, interstitial configuration + + links, interaction of carbon and silicon interstitials, + tersoff suitability", +} @Article{leung99, - title = {Calculations of Silicon Self-Interstitial Defects}, - author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and - Itoh, S. and Ihara, S. }, - journal = {Phys. Rev. Lett.}, - volume = {83}, - number = {12}, - pages = {2351--2354}, - numpages = {3}, - year = {1999}, - month = {Sep}, - doi = {10.1103/PhysRevLett.83.2351}, - publisher = {American Physical Society}, - notes = {nice images of the defects} -} - -@Article{PhysRevB.50.7439, - title = {Identification of the migration path of interstitial carbon - in silicon}, - author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos}, - journal = {Phys. Rev. B}, - volume = {50}, - number = {11}, - pages = {7439--7442}, - numpages = {3}, - year = {1994}, - month = {Sep}, - doi = {10.1103/PhysRevB.50.7439}, - publisher = {American Physical Society}, - notes = {carbon interstitial migration path shown, 001 c-si dumbbell} -} - -% experimental stuff - interstitials + title = "Calculations of Silicon Self-Interstitial Defects", + author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S. + Itoh and S. Ihara", + journal = "Phys. Rev. Lett.", + volume = "83", + number = "12", + pages = "2351--2354", + numpages = "3", + year = "1999", + month = sep, + doi = "10.1103/PhysRevLett.83.2351", + publisher = "American Physical Society", + notes = "nice images of the defects, si defect overview + + refs", +} + +@Article{capaz94, + title = "Identification of the migration path of interstitial + carbon in silicon", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "50", + number = "11", + pages = "7439--7442", + numpages = "3", + year = "1994", + month = sep, + doi = "10.1103/PhysRevB.50.7439", + publisher = "American Physical Society", + notes = "carbon interstitial migration path shown, 001 c-si + dumbbell", +} + +@Article{capaz98, + title = "Theory of carbon-carbon pairs in silicon", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "58", + number = "15", + pages = "9845--9850", + numpages = "5", + year = "1998", + month = oct, + doi = "10.1103/PhysRevB.58.9845", + publisher = "American Physical Society", + notes = "c_i c_s pair configuration, theoretical results", +} + +@Article{song90_2, + title = "Bistable interstitial-carbon--substitutional-carbon + pair in silicon", + author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D. + Watkins", + journal = "Phys. Rev. B", + volume = "42", + number = "9", + pages = "5765--5783", + numpages = "18", + year = "1990", + month = sep, + doi = "10.1103/PhysRevB.42.5765", + publisher = "American Physical Society", + notes = "c_i c_s pair configuration, experimental results", +} + +@Article{liu02, + author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and + Shifeng Lu and Xiang-Yang Liu", + collaboration = "", + title = "Ab initio modeling and experimental study of {C}--{B} + interactions in Si", + publisher = "AIP", + year = "2002", + journal = "Appl. Phys. Lett.", + volume = "80", + number = "1", + pages = "52--54", + keywords = "silicon; boron; carbon; elemental semiconductors; + impurity-defect interactions; ab initio calculations; + secondary ion mass spectra; diffusion; interstitials", + URL = "http://link.aip.org/link/?APL/80/52/1", + doi = "10.1063/1.1430505", + notes = "c-c 100 split, lower as a and b states of capaz", +} + +@Article{dal_pino93, + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. {Dal Pino} and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", +} + +@Article{car84, + title = "Microscopic Theory of Atomic Diffusion Mechanisms in + Silicon", + author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and + Sokrates T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "52", + number = "20", + pages = "1814--1817", + numpages = "3", + year = "1984", + month = may, + doi = "10.1103/PhysRevLett.52.1814", + publisher = "American Physical Society", + notes = "microscopic theory diffusion silicon dft migration + path formation", +} + +@Article{car85, + title = "Unified Approach for Molecular Dynamics and + Density-Functional Theory", + author = "R. Car and M. Parrinello", + journal = "Phys. Rev. Lett.", + volume = "55", + number = "22", + pages = "2471--2474", + numpages = "3", + year = "1985", + month = nov, + doi = "10.1103/PhysRevLett.55.2471", + publisher = "American Physical Society", + notes = "car parrinello method, dft and md", +} + +@Article{kelires97, + title = "Short-range order, bulk moduli, and physical trends in + c-$Si1-x$$Cx$ alloys", + author = "P. C. Kelires", + journal = "Phys. Rev. B", + volume = "55", + number = "14", + pages = "8784--8787", + numpages = "3", + year = "1997", + month = apr, + doi = "10.1103/PhysRevB.55.8784", + publisher = "American Physical Society", + notes = "c strained si, montecarlo md, bulk moduli, next + neighbour dist", +} + +@Article{kelires95, + title = "Monte Carlo Studies of Ternary Semiconductor Alloys: + Application to the $Si1-x-yGexCy$ System", + author = "P. C. Kelires", + journal = "Phys. Rev. Lett.", + volume = "75", + number = "6", + pages = "1114--1117", + numpages = "3", + year = "1995", + month = aug, + doi = "10.1103/PhysRevLett.75.1114", + publisher = "American Physical Society", + notes = "mc md, strain compensation in si ge by c insertion", +} + +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Commun.", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} + +@Article{durand99, + author = "F. Durand and J. Duby", + affiliation = "EPM-Madylam, CNRS and INP Grenoble, France", + title = "Carbon solubility in solid and liquid silicon—{A} + review with reference to eutectic equilibrium", + journal = "Journal of Phase Equilibria", + publisher = "Springer New York", + ISSN = "1054-9714", + keyword = "Chemistry and Materials Science", + pages = "61--63", + volume = "20", + issue = "1", + URL = "http://dx.doi.org/10.1361/105497199770335956", + note = "10.1361/105497199770335956", + year = "1999", + notes = "better c solubility limit in silicon", +} @Article{watkins76, - title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon}, - author = {G. D. Watkins and K. L. Brower}, - journal = {Phys. Rev. Lett.}, - volume = {36}, - number = {22}, - pages = {1329--1332}, - numpages = {3}, - year = {1976}, - month = {May}, - doi = {10.1103/PhysRevLett.36.1329}, - publisher = {American Physical Society}, - notes = {epr observations of 100 interstitial carbon atom in silicon} + title = "{EPR} Observation of the Isolated Interstitial Carbon + Atom in Silicon", + author = "G. D. Watkins and K. L. Brower", + journal = "Phys. Rev. Lett.", + volume = "36", + number = "22", + pages = "1329--1332", + numpages = "3", + year = "1976", + month = may, + doi = "10.1103/PhysRevLett.36.1329", + publisher = "American Physical Society", + notes = "epr observations of 100 interstitial carbon atom in + silicon", } @Article{song90, - title = {EPR identification of the single-acceptor state of interstitial carbon in silicon}, - author = {L. W. Song, G. D. Watkins}, - journal = {Phys. Rev. B}, - volume = {42}, - number = {9}, - pages = {5759--5764}, - numpages = {5}, - year = {1990}, - month = {Sep}, - doi = {10.1103/PhysRevB.42.5759}, - publisher = {American Physical Society} + title = "{EPR} identification of the single-acceptor state of + interstitial carbon in silicon", + author = "L. W. Song and G. D. Watkins", + journal = "Phys. Rev. B", + volume = "42", + number = "9", + pages = "5759--5764", + numpages = "5", + year = "1990", + month = sep, + doi = "10.1103/PhysRevB.42.5759", + publisher = "American Physical Society", + notes = "carbon diffusion in silicon", +} + +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semicond. Sci. Technol.", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", } -% experimental stuff - strained silicon +@Article{isomae93, + author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and + Masao Tamura", + collaboration = "", + title = "Annealing behavior of Me{V} implanted carbon in + silicon", + publisher = "AIP", + year = "1993", + journal = "J. Appl. Phys.", + volume = "74", + number = "6", + pages = "3815--3820", + keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV + RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH + PROFILES", + URL = "http://link.aip.org/link/?JAP/74/3815/1", + doi = "10.1063/1.354474", + notes = "c at interstitial location for rt implantation in si", +} @Article{strane96, - title = {Carbon incorporation into Si at high concentrations - by ion implantation and solid phase epitaxy}, - author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and - J. K. Watanabe and J. W. Mayer}, - journal = {J. Appl. Phys.}, - volume = {79}, - pages = {637}, - year = {1996}, - month = {January}, - doi = {10.1063/1.360806}, - notes = {strained silicon, carbon supersaturation} -} - -% sic formation mechanism - -@article{werner97, - author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa}, - title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy}, - publisher = {AIP}, - year = {1997}, - journal = {Applied Physics Letters}, - volume = {70}, - number = {2}, - pages = {252-254}, - keywords = {silicon; ion implantation; carbon; crystal defects; - transmission electron microscopy; annealing; - positron annihilation; secondary ion mass spectroscopy; - buried layers; precipitation}, - url = {http://link.aip.org/link/?APL/70/252/1}, - doi = {10.1063/1.118381}, - notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate} -} - -@article{strane94, - author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and - J. K. Watanabe and J. W. Mayer}, - collaboration = {}, - title = {Precipitation and relaxation in strained - Si[sub 1 - y]C[sub y]/Si heterostructures}, - publisher = {AIP}, - year = {1994}, - journal = {Journal of Applied Physics}, - volume = {76}, - number = {6}, - pages = {3656-3668}, - keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS}, - url = {http://link.aip.org/link/?JAP/76/3656/1}, - doi = {10.1063/1.357429}, - notes = {strained si-c to 3c-sic, carbon nucleation + refs} -} - -% properties sic + title = "Carbon incorporation into Si at high concentrations by + ion implantation and solid phase epitaxy", + author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T. + Picraux and J. K. Watanabe and J. W. Mayer", + journal = "J. Appl. Phys.", + volume = "79", + pages = "637", + year = "1996", + month = jan, + doi = "10.1063/1.360806", + notes = "strained silicon, carbon supersaturation", +} + +@Article{laveant2002, + title = "Epitaxy of carbon-rich silicon with {MBE}", + journal = "Mater. Sci. Eng., B", + volume = "89", + number = "1-3", + pages = "241--245", + year = "2002", + ISSN = "0921-5107", + doi = "DOI: 10.1016/S0921-5107(01)00794-2", + URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268", + author = "P. Lav\'eant and G. Gerth and P. Werner and U. + G{\"{o}}sele", + notes = "low c in si, tensile stress to compensate compressive + stress, avoid sic precipitation", +} + +@Article{foell77, + title = "The formation of swirl defects in silicon by + agglomeration of self-interstitials", + journal = "J. Cryst. Growth", + volume = "40", + number = "1", + pages = "90--108", + year = "1977", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(77)90034-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "b-swirl: si + c interstitial agglomerates, c-si + agglomerate", +} + +@Article{foell81, + title = "Microdefects in silicon and their relation to point + defects", + journal = "J. Cryst. Growth", + volume = "52", + number = "Part 2", + pages = "907--916", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90397-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "swirl review", +} + +@Article{werner97, + author = "P. Werner and S. Eichler and G. Mariani and R. + K{\"{o}}gler and W. Skorupa", + title = "Investigation of {C}[sub x]Si defects in {C} implanted + silicon by transmission electron microscopy", + publisher = "AIP", + year = "1997", + journal = "Appl. Phys. Lett.", + volume = "70", + number = "2", + pages = "252--254", + keywords = "silicon; ion implantation; carbon; crystal defects; + transmission electron microscopy; annealing; positron + annihilation; secondary ion mass spectroscopy; buried + layers; precipitation", + URL = "http://link.aip.org/link/?APL/70/252/1", + doi = "10.1063/1.118381", + notes = "si-c complexes, agglomerate, sic in si matrix, sic + precipitate", +} + +@InProceedings{werner96, + author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. + Eichler", + booktitle = "Proceedings of the 11th International Conference on + Ion Implantation Technology.", + title = "{TEM} investigation of {C}-Si defects in carbon + implanted silicon", + year = "1996", + month = jun, + volume = "", + number = "", + pages = "675--678", + doi = "10.1109/IIT.1996.586497", + ISSN = "", + notes = "c-si agglomerates dumbbells", +} + +@Article{werner98, + author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and + D. C. Jacobson", + collaboration = "", + title = "Carbon diffusion in silicon", + publisher = "AIP", + year = "1998", + journal = "Appl. Phys. Lett.", + volume = "73", + number = "17", + pages = "2465--2467", + keywords = "silicon; carbon; elemental semiconductors; diffusion; + secondary ion mass spectra; semiconductor epitaxial + layers; annealing; impurity-defect interactions; + impurity distribution", + URL = "http://link.aip.org/link/?APL/73/2465/1", + doi = "10.1063/1.122483", + notes = "c diffusion in si, kick out mechnism", +} + +@Article{kalejs84, + author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele", + collaboration = "", + title = "Self-interstitial enhanced carbon diffusion in + silicon", + publisher = "AIP", + year = "1984", + journal = "Appl. Phys. Lett.", + volume = "45", + number = "3", + pages = "268--269", + keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS; + CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH + TEMPERATURE; IMPURITIES", + URL = "http://link.aip.org/link/?APL/45/268/1", + doi = "10.1063/1.95167", + notes = "c diffusion due to si self-interstitials", +} + +@Article{fukami90, + author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano + and Cary Y. Yang", + collaboration = "", + title = "Characterization of SiGe/Si heterostructures formed by + Ge[sup + ] and {C}[sup + ] implantation", + publisher = "AIP", + year = "1990", + journal = "Appl. Phys. Lett.", + volume = "57", + number = "22", + pages = "2345--2347", + keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES; + FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM + SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE + EPITAXY; CARBON IONS; GERMANIUM IONS", + URL = "http://link.aip.org/link/?APL/57/2345/1", + doi = "10.1063/1.103888", +} + +@Article{strane93, + author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L. + Doyle and S. T. Picraux and J. W. Mayer", + collaboration = "", + title = "Metastable SiGe{C} formation by solid phase epitaxy", + publisher = "AIP", + year = "1993", + journal = "Appl. Phys. Lett.", + volume = "63", + number = "20", + pages = "2786--2788", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY + SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES; + ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD + SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE + EPITAXY; AMORPHIZATION", + URL = "http://link.aip.org/link/?APL/63/2786/1", + doi = "10.1063/1.110334", +} + +@Article{goorsky92, + author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F. + Legoues and J. Angilello and F. Cardone", + collaboration = "", + title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si + strained layer superlattices", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "22", + pages = "2758--2760", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; + CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS + RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; + DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS", + URL = "http://link.aip.org/link/?APL/60/2758/1", + doi = "10.1063/1.106868", +} + +@Article{strane94, + author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. + Picraux and J. K. Watanabe and J. W. Mayer", + collaboration = "", + title = "Precipitation and relaxation in strained Si[sub 1 - + y]{C}[sub y]/Si heterostructures", + publisher = "AIP", + year = "1994", + journal = "J. Appl. Phys.", + volume = "76", + number = "6", + pages = "3656--3668", + keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", + URL = "http://link.aip.org/link/?JAP/76/3656/1", + doi = "10.1063/1.357429", + notes = "strained si-c to 3c-sic, carbon nucleation + refs, + precipitation by substitutional carbon, coherent prec, + coherent to incoherent transition strain vs interface + energy", +} + +@Article{fischer95, + author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J. + Osten", + collaboration = "", + title = "Investigation of the high temperature behavior of + strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", + publisher = "AIP", + year = "1995", + journal = "J. Appl. Phys.", + volume = "77", + number = "5", + pages = "1934--1937", + keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS; + XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE + PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION; + TEMPERATURE RANGE 04001000 K", + URL = "http://link.aip.org/link/?JAP/77/1934/1", + doi = "10.1063/1.358826", +} @Article{edgar92, - title = {Prospects for device implementation of wide band gap semiconductors}, - author = {J. H. Edgar}, - journal = {J. Mater. Res.}, - volume = {7}, - pages = {235}, - year = {1992}, - month = {January}, - doi = {10.1557/JMR.1992.0235}, - notes = {properties wide band gap semiconductor, sic polytypes} -} - -% my own publications - -@article{zirkelbach2007, - title = {Monte Carlo simulation study of a selforganisation process - leading to ordered precipitate structures}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. Instr. and Meth. B}, - volume = {257}, - number = {1--2}, - pages = {75--79}, - numpages = {5}, - year = {2007}, - month = {Apr}, - doi = {doi:10.1016/j.nimb.2006.12.118}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -@article{zirkelbach2006, - title = {Monte-Carlo simulation study of the self-organization of nanometric - amorphous precipitates in regular arrays during ion irradiation}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. Instr. and Meth. B}, - volume = {242}, - number = {1--2}, - pages = {679--682}, - numpages = {4}, - year = {2006}, - month = {Jan}, - doi = {doi:10.1016/j.nimb.2005.08.162}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -@article{zirkelbach2005, - title = {Modelling of a selforganization process leading to periodic arrays - of nanometric amorphous precipitates by ion irradiation}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Comp. Mater. Sci.}, - volume = {33}, - number = {1--3}, - pages = {310--316}, - numpages = {7}, - year = {2005}, - month = {Apr}, - doi = {doi:10.1016/j.commatsci.2004.12.016}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -% the one of my boss + title = "Prospects for device implementation of wide band gap + semiconductors", + author = "J. H. Edgar", + journal = "J. Mater. Res.", + volume = "7", + pages = "235", + year = "1992", + month = jan, + doi = "10.1557/JMR.1992.0235", + notes = "properties wide band gap semiconductor, sic + polytypes", +} + +@Article{zirkelbach2007, + title = "Monte Carlo simulation study of a selforganisation + process leading to ordered precipitate structures", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", + journal = "Nucl. Instr. and Meth. B", + volume = "257", + number = "1--2", + pages = "75--79", + numpages = "5", + year = "2007", + month = apr, + doi = "doi:10.1016/j.nimb.2006.12.118", + publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, + NETHERLANDS", + abstract = "Periodically arranged, selforganised, nanometric, + amorphous precipitates have been observed after + high-fluence ion implantations into solids for a number + of ion/target combinations at certain implantation + conditions. A model describing the ordering process + based on compressive stress exerted by the amorphous + inclusions as a result of the density change upon + amorphisation is introduced. A Monte Carlo simulation + code, which focuses on high-fluence carbon + implantations into silicon, is able to reproduce + experimentally observed nanolamella distributions as + well as the formation of continuous amorphous layers. + By means of simulation, the selforganisation process + becomes traceable and detailed information about the + compositional and structural state during the ordering + process is obtained. Based on simulation results, a + recipe is proposed for producing broad distributions of + ordered lamellar structures.", +} + +@Article{zirkelbach2006, + title = "Monte-Carlo simulation study of the self-organization + of nanometric amorphous precipitates in regular arrays + during ion irradiation", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", + journal = "Nucl. Instr. and Meth. B", + volume = "242", + number = "1--2", + pages = "679--682", + numpages = "4", + year = "2006", + month = jan, + doi = "doi:10.1016/j.nimb.2005.08.162", + publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, + NETHERLANDS", + abstract = "High-dose ion implantation of materials that undergo + drastic density change upon amorphization at certain + implantation conditions results in periodically + arranged, self-organized, nanometric configurations of + the amorphous phase. A simple model explaining the + phenomenon is introduced and implemented in a + Monte-Carlo simulation code. Through simulation + conditions for observing lamellar precipitates are + specified and additional information about the + compositional and structural state during the ordering + process is gained.", +} + +@Article{zirkelbach2005, + title = "Modelling of a selforganization process leading to + periodic arrays of nanometric amorphous precipitates by + ion irradiation", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", + journal = "Comp. Mater. Sci.", + volume = "33", + number = "1--3", + pages = "310--316", + numpages = "7", + year = "2005", + month = apr, + doi = "doi:10.1016/j.commatsci.2004.12.016", + publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, + NETHERLANDS", + abstract = "Ion irradiation of materials, which undergo a drastic + density change upon amorphization have been shown to + exhibit selforganized, nanometric structures of the + amorphous phase in the crystalline host lattice. In + order to better understand the process a + Monte-Carlo-simulation code based on a simple model is + developed. In the present work we focus on high-dose + carbon implantations into silicon. The simulation is + able to reproduce results gained by cross-sectional TEM + measurements of high-dose carbon implanted silicon. + Necessary conditions can be specified for the + self-organization process and information is gained + about the compositional and structural state during the + ordering process which is difficult to be obtained by + experiment.", +} + +@Article{zirkelbach09, + title = "Molecular dynamics simulation of defect formation and + precipitation in heavily carbon doped silicon", + journal = "Mater. Sci. Eng., B", + volume = "159-160", + number = "", + pages = "149--152", + year = "2009", + note = "EMRS 2008 Spring Conference Symposium K: Advanced + Silicon Materials Research for Electronic and + Photovoltaic Applications", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2008.10.010", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39", + author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and + B. Stritzker", + keywords = "Silicon", + keywords = "Carbon", + keywords = "Silicon carbide", + keywords = "Nucleation", + keywords = "Defect formation", + keywords = "Molecular dynamics simulations", + abstract = "The precipitation process of silicon carbide in + heavily carbon doped silicon is not yet fully + understood. High resolution transmission electron + microscopy observations suggest that in a first step + carbon atoms form C-Si dumbbells on regular Si lattice + sites which agglomerate into large clusters. In a + second step, when the cluster size reaches a radius of + a few nm, the high interfacial energy due to the SiC/Si + lattice misfit of almost 20\% is overcome and the + precipitation occurs. By simulation, details of the + precipitation process can be obtained on the atomic + level. A recently proposed parametrization of a + Tersoff-like bond order potential is used to model the + system appropriately. Preliminary results gained by + molecular dynamics simulations using this potential are + presented.", +} + +@Article{zirkelbach10, + title = "Defects in carbon implanted silicon calculated by + classical potentials and first-principles methods", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", + journal = "Phys. Rev. B", + volume = "82", + number = "9", + pages = "094110", + numpages = "6", + year = "2010", + month = sep, + doi = "10.1103/PhysRevB.82.094110", + publisher = "American Physical Society", + abstract = "A comparative theoretical investigation of carbon + interstitials in silicon is presented. Calculations + using classical potentials are compared to + first-principles density-functional theory calculations + of the geometries, formation, and activation energies + of the carbon dumbbell interstitial, showing the + importance of a quantum-mechanical description of this + system. In contrast to previous studies, the present + first-principles calculations of the interstitial + carbon migration path yield an activation energy that + excellently matches the experiment. The bond-centered + interstitial configuration shows a net magnetization of + two electrons, illustrating the need for spin-polarized + calculations.", +} + +@Article{zirkelbach11, + title = "Combined ab initio and classical potential simulation + study on the silicon carbide precipitation in silicon", + journal = "accepted for publication in Phys. Rev. B", + volume = "", + number = "", + pages = "", + year = "2011", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", + abstract = "Atomistic simulations on the silicon carbide + precipitation in bulk silicon employing both, classical + potential and first-principles methods are presented. + The calculations aim at a comprehensive, microscopic + understanding of the precipitation mechanism in the + context of controversial discussions in the literature. + For the quantum-mechanical treatment, basic processes + assumed in the precipitation process are calculated in + feasible systems of small size. The migration mechanism + of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1 + 1 0> self-interstitial in otherwise defect-free silicon + are investigated using density functional theory + calculations. The influence of a nearby vacancy, + another carbon interstitial and a substitutional defect + as well as a silicon self-interstitial has been + investigated systematically. Interactions of various + combinations of defects have been characterized + including a couple of selected migration pathways + within these configurations. Almost all of the + investigated pairs of defects tend to agglomerate + allowing for a reduction in strain. The formation of + structures involving strong carbon-carbon bonds turns + out to be very unlikely. In contrast, substitutional + carbon occurs in all probability. A long range capture + radius has been observed for pairs of interstitial + carbon as well as interstitial carbon and vacancies. A + rather small capture radius is predicted for + substitutional carbon and silicon self-interstitials. + Initial assumptions regarding the precipitation + mechanism of silicon carbide in bulk silicon are + established and conformability to experimental findings + is discussed. Furthermore, results of the accurate + first-principles calculations on defects and carbon + diffusion in silicon are compared to results of + classical potential simulations revealing significant + limitations of the latter method. An approach to work + around this problem is proposed. Finally, results of + the classical potential molecular dynamics simulations + of large systems are examined, which reinforce previous + assumptions and give further insight into basic + processes involved in the silicon carbide transition.", +} + +@Article{lindner95, + author = "J. K. N. Lindner and A. Frohnwieser and B. + Rauschenbach and B. Stritzker", + title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} + Layers in Silicon", + journal = "MRS Proc.", + volume = "354", + number = "", + pages = "171", + year = "1994", + doi = "10.1557/PROC-354-171", + URL = "http://dx.doi.org/10.1557/PROC-354-171", + eprint = "http://journals.cambridge.org/article_S1946427400420853", + notes = "first time ibs at moderate temperatures", +} + +@Article{lindner96, + title = "Formation of buried epitaxial silicon carbide layers + in silicon by ion beam synthesis", + journal = "Mater. Chem. Phys.", + volume = "46", + number = "2-3", + pages = "147--155", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/S0254-0584(97)80008-9", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7", + author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B. + Götz and A. Frohnwieser and B. Rauschenbach and B. + Stritzker", + notes = "dose window", +} + +@Article{calcagno96, + title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by + ion implantation", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "120", + number = "1-4", + pages = "121--124", + year = "1996", + note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on + New Trends in Ion Beam Processing of Materials", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(96)00492-2", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d", + author = "L. Calcagno and G. Compagnini and G. Foti and M. G. + Grimaldi and P. Musumeci", + notes = "dose window, graphitic bonds", +} + +@Article{lindner98, + title = "Mechanisms of Si{C} Formation in the Ion Beam + Synthesis of 3{C}-Si{C} Layers in Silicon", + journal = "Mater. Sci. Forum", + volume = "264-268", + pages = "215--218", + year = "1998", + note = "", + doi = "10.4028/www.scientific.net/MSF.264-268.215", + URL = "http://www.scientific.net/MSF.264-268.215", + author = "J. K. N. Lindner and W. Reiber and B. Stritzker", + notes = "intermediate temperature for sharp interface + good + crystallinity", +} + +@Article{lindner99, + title = "Controlling the density distribution of Si{C} + nanocrystals for the ion beam synthesis of buried Si{C} + layers in silicon", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "147", + number = "1-4", + pages = "249--255", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00598-9", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169", + author = "J. K. N. Lindner and B. Stritzker", + notes = "two-step implantation process", +} + +@Article{lindner99_2, + title = "Mechanisms in the ion beam synthesis of Si{C} layers + in silicon", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "148", + number = "1-4", + pages = "528--533", + year = "1999", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00787-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", + author = "J. K. N. Lindner and B. Stritzker", + notes = "3c-sic precipitation model, c-si dimers (dumbbells)", +} + +@Article{lindner01, + title = "Ion beam synthesis of buried Si{C} layers in silicon: + Basic physical processes", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "178", + number = "1-4", + pages = "44--54", + year = "2001", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(01)00504-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", + author = "J{\"{o}}rg K. N. Lindner", +} @Article{lindner02, - title = {High-dose carbon implantations into silicon: - fundamental studies for new technological tricks}, - author = {J. K. N. Lindner}, - journal = {Appl. Phys. A}, - volume = {77}, - pages = {27--38}, - year = {2003}, - doi = {10.1007/s00339-002-2062-8}, - notes = {ibs, burried sic layers} + title = "High-dose carbon implantations into silicon: + fundamental studies for new technological tricks", + author = "J. K. N. Lindner", + journal = "Appl. Phys. A", + volume = "77", + pages = "27--38", + year = "2003", + doi = "10.1007/s00339-002-2062-8", + notes = "ibs, burried sic layers", +} + +@Article{lindner06, + title = "On the balance between ion beam induced nanoparticle + formation and displacive precipitate resolution in the + {C}-Si system", + journal = "Mater. Sci. Eng., C", + volume = "26", + number = "5-7", + pages = "857--861", + year = "2006", + note = "Current Trends in Nanoscience - from Materials to + Applications", + ISSN = "0928-4931", + doi = "DOI: 10.1016/j.msec.2005.09.099", + URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a", + author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth + and B. Stritzker", + notes = "c int diffusion barrier", +} + +@Article{ito04, + title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its + application in buffer layer for Ga{N} epitaxial + growth", + journal = "Appl. Surf. Sci.", + volume = "238", + number = "1-4", + pages = "159--164", + year = "2004", + note = "APHYS'03 Special Issue", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2004.05.199", + URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c", + author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase + and S. Nishio and K. Yasuda and Y. Ishigami", + notes = "gan on 3c-sic, focus on ibs of 3c-sic", +} + +@Article{yamamoto04, + title = "Organometallic vapor phase epitaxial growth of Ga{N} + on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion + implantation into Si(1 1 1) substrate", + journal = "J. Cryst. Growth", + volume = "261", + number = "2-3", + pages = "266--270", + year = "2004", + note = "Proceedings of the 11th Biennial (US) Workshop on + Organometallic Vapor Phase Epitaxy (OMVPE)", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2003.11.041", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166", + author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M. + Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito", + notes = "gan on 3c-sic", +} + +@Article{liu_l02, + title = "Substrates for gallium nitride epitaxy", + journal = "Mater. Sci. Eng., R", + volume = "37", + number = "3", + pages = "61--127", + year = "2002", + note = "", + ISSN = "0927-796X", + doi = "DOI: 10.1016/S0927-796X(02)00008-6", + URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401", + author = "L. Liu and J. H. Edgar", + notes = "gan substrates", +} + +@Article{takeuchi91, + title = "Growth of single crystalline Ga{N} film on Si + substrate using 3{C}-Si{C} as an intermediate layer", + journal = "J. Cryst. Growth", + volume = "115", + number = "1-4", + pages = "634--638", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90817-O", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140", + author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa + Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki", + notes = "gan on 3c-sic (first time?)", +} + +@Article{alder57, + author = "B. J. Alder and T. E. Wainwright", + title = "Phase Transition for a Hard Sphere System", + publisher = "AIP", + year = "1957", + journal = "J. Chem. Phys.", + volume = "27", + number = "5", + pages = "1208--1209", + URL = "http://link.aip.org/link/?JCP/27/1208/1", + doi = "10.1063/1.1743957", +} + +@Article{alder59, + author = "B. J. Alder and T. E. Wainwright", + title = "Studies in Molecular Dynamics. {I}. General Method", + publisher = "AIP", + year = "1959", + journal = "J. Chem. Phys.", + volume = "31", + number = "2", + pages = "459--466", + URL = "http://link.aip.org/link/?JCP/31/459/1", + doi = "10.1063/1.1730376", +} + +@Article{horsfield96, + title = "Bond-order potentials: Theory and implementation", + author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and + D. G. Pettifor and M. Aoki", + journal = "Phys. Rev. B", + volume = "53", + number = "19", + pages = "12694--12712", + numpages = "18", + year = "1996", + month = may, + doi = "10.1103/PhysRevB.53.12694", + publisher = "American Physical Society", +} + +@Article{abell85, + title = "Empirical chemical pseudopotential theory of molecular + and metallic bonding", + author = "G. C. Abell", + journal = "Phys. Rev. B", + volume = "31", + number = "10", + pages = "6184--6196", + numpages = "12", + year = "1985", + month = may, + doi = "10.1103/PhysRevB.31.6184", + publisher = "American Physical Society", +} + +@Article{tersoff_si1, + title = "New empirical model for the structural properties of + silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "56", + number = "6", + pages = "632--635", + numpages = "3", + year = "1986", + month = feb, + doi = "10.1103/PhysRevLett.56.632", + publisher = "American Physical Society", +} + +@Article{dodson87, + title = "Development of a many-body Tersoff-type potential for + silicon", + author = "Brian W. Dodson", + journal = "Phys. Rev. B", + volume = "35", + number = "6", + pages = "2795--2798", + numpages = "3", + year = "1987", + month = feb, + doi = "10.1103/PhysRevB.35.2795", + publisher = "American Physical Society", +} + +@Article{tersoff_si2, + title = "New empirical approach for the structure and energy of + covalent systems", + author = "J. Tersoff", + journal = "Phys. Rev. B", + volume = "37", + number = "12", + pages = "6991--7000", + numpages = "9", + year = "1988", + month = apr, + doi = "10.1103/PhysRevB.37.6991", + publisher = "American Physical Society", +} + +@Article{tersoff_si3, + title = "Empirical interatomic potential for silicon with + improved elastic properties", + author = "J. Tersoff", + journal = "Phys. Rev. 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Lett.", + volume = "50", + number = "7", + pages = "416--418", + keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION; + BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY + HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY", + URL = "http://link.aip.org/link/?APL/50/416/1", + doi = "10.1063/1.98160", + notes = "ted of boron in si", +} + +@Article{cowern90, + author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F. + Jos", + collaboration = "", + title = "Transient diffusion of ion-implanted {B} in Si: Dose, + time, and matrix dependence of atomic and electrical + profiles", + publisher = "AIP", + year = "1990", + journal = "J. Appl. 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Lett.", + volume = "50", + number = "4", + pages = "221--223", + keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON + MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL + VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION + ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE + BOUNDARIES", + URL = "http://link.aip.org/link/?APL/50/221/1", + doi = "10.1063/1.97667", + notes = "apb 3c-sic heteroepitaxy on si", +} + +@Article{shibahara86, + title = "Surface morphology of cubic Si{C}(100) grown on + Si(100) by chemical vapor deposition", + journal = "J. Cryst. Growth", + volume = "78", + number = "3", + pages = "538--544", + year = "1986", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(86)90158-2", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9", + author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki + Matsunami", + notes = "defects in 3c-sis cvd on si, anti phase boundaries", +} + +@Article{desjardins96, + author = "P. Desjardins and J. E. Greene", + collaboration = "", + title = "Step-flow epitaxial growth on two-domain surfaces", + publisher = "AIP", + year = "1996", + journal = "J. Appl. Phys.", + volume = "79", + number = "3", + pages = "1423--1434", + keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY; + FILM GROWTH; SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?JAP/79/1423/1", + doi = "10.1063/1.360980", + notes = "apb model", +} + +@Article{henke95, + author = "S. Henke and B. Stritzker and B. 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Growth", + volume = "95", + number = "1-4", + pages = "461--463", + year = "1989", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(89)90442-9", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2", + author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo + Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami", + notes = "gas source mbe of 3c-sic on 6h-sic", +} + +@Article{yoshinobu92, + author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa + and Takashi Fuyuki and Hiroyuki Matsunami", + collaboration = "", + title = "Lattice-matched epitaxial growth of single crystalline + 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source + molecular beam epitaxy", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "7", + pages = "824--826", + keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM + EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS; + INTERFACE STRUCTURE", + URL = "http://link.aip.org/link/?APL/60/824/1", + doi = "10.1063/1.107430", + notes = "gas source mbe of 3c-sic on 6h-sic", +} + +@Article{yoshinobu90, + title = "Atomic level control in gas source {MBE} growth of + cubic Si{C}", + journal = "J. Cryst. Growth", + volume = "99", + number = "1-4", + pages = "520--524", + year = "1990", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(90)90575-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736", + author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu + Shiomi and Takashi Fuyuki and Hiroyuki Matsunami", + notes = "gas source mbe of 3c-sic on 3c-sic", +} + +@Article{fuyuki93, + title = "Atomic layer epitaxy controlled by surface + superstructures in Si{C}", + journal = "Thin Solid Films", + volume = "225", + number = "1-2", + pages = "225--229", + year = "1993", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(93)90159-M", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f", + author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki + Matsunami", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{hara93, + title = "Microscopic mechanisms of accurate layer-by-layer + growth of [beta]-Si{C}", + journal = "Thin Solid Films", + volume = "225", + number = "1-2", + pages = "240--243", + year = "1993", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(93)90162-I", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c", + author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai + and S. Misawa and E. Sakuma and S. Yoshida", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{tanaka94, + author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis", + collaboration = "", + title = "Effects of gas flow ratio on silicon carbide thin film + growth mode and polytype formation during gas-source + molecular beam epitaxy", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "65", + number = "22", + pages = "2851--2853", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED; + TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; + NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS + FLOW; FLOW RATE", + URL = "http://link.aip.org/link/?APL/65/2851/1", + doi = "10.1063/1.112513", + notes = "gas source mbe of 6h-sic on 6h-sic", +} + +@Article{fuyuki97, + author = "T. Fuyuki and T. Hatayama and H. Matsunami", + title = "Heterointerface Control and Epitaxial Growth of + 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "phys. status solidi (b)", + volume = "202", + pages = "359--378", + notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower + temperatures 750", +} + +@Article{takaoka98, + title = "Initial stage of Si{C} growth on Si(1 0 0) surface", + journal = "J. Cryst. Growth", + volume = "183", + number = "1-2", + pages = "175--182", + year = "1998", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/S0022-0248(97)00391-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918", + author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki", + keywords = "Reflection high-energy electron diffraction (RHEED)", + keywords = "Scanning electron microscopy (SEM)", + keywords = "Silicon carbide", + keywords = "Silicon", + keywords = "Island growth", + notes = "lower temperature, 550-700", +} + +@Article{hatayama95, + title = "Low-temperature heteroepitaxial growth of cubic Si{C} + on Si using hydrocarbon radicals by gas source + molecular beam epitaxy", + journal = "J. Cryst. Growth", + volume = "150", + number = "Part 2", + pages = "934--938", + year = "1995", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)80077-P", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e", + author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki + and Hiroyuki Matsunami", +} + +@Article{heine91, + author = "Volker Heine and Ching Cheng and Richard J. Needs", + title = "The Preference of Silicon Carbide for Growth in the + Metastable Cubic Form", + journal = "J. Am. Ceram. Soc.", + volume = "74", + number = "10", + publisher = "Blackwell Publishing Ltd", + ISSN = "1551-2916", + URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x", + doi = "10.1111/j.1151-2916.1991.tb06811.x", + pages = "2630--2633", + keywords = "silicon carbide, crystal growth, crystal structure, + calculations, stability", + year = "1991", + notes = "3c-sic metastable, 3c-sic preferred growth, sic + polytype dft calculation refs", +} + +@Article{allendorf91, + title = "The adsorption of {H}-atoms on polycrystalline + [beta]-silicon carbide", + journal = "Surf. Sci.", + volume = "258", + number = "1-3", + pages = "177--189", + year = "1991", + note = "", + ISSN = "0039-6028", + doi = "DOI: 10.1016/0039-6028(91)90912-C", + URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3", + author = "Mark D. Allendorf and Duane A. Outka", + notes = "h adsorption on 3c-sic", +} + +@Article{eaglesham93, + author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and + D. P. Adams and S. M. Yalisove", + collaboration = "", + title = "Effect of {H} on Si molecular-beam epitaxy", + publisher = "AIP", + year = "1993", + journal = "J. Appl. Phys.", + volume = "74", + number = "11", + pages = "6615--6618", + keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE + CONTAMINATION; SIMS; SEGREGATION; IMPURITIES; + DIFFUSION; ADSORPTION", + URL = "http://link.aip.org/link/?JAP/74/6615/1", + doi = "10.1063/1.355101", + notes = "h incorporation on si surface, lower surface + mobility", +} + +@Article{newman85, + author = "Ronald C. 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B", + volume = "58", + number = "3", + pages = "1318--1325", + numpages = "7", + year = "1998", + month = jul, + doi = "10.1103/PhysRevB.58.1318", + publisher = "American Physical Society", + notes = "convergence k point supercell size, vacancy in + silicon", +} + +@Article{serre95, + author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A. + Romano-Rodr\'{\i}guez and J. R. Morante and R. + K{\"{o}}gler and W. Skorupa", + collaboration = "", + title = "Spectroscopic characterization of phases formed by + high-dose carbon ion implantation in silicon", + publisher = "AIP", + year = "1995", + journal = "J. Appl. Phys.", + volume = "77", + number = "7", + pages = "2978--2984", + keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS; + FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA; + PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE + DEPENDENCE; PRECIPITATES; ANNEALING", + URL = "http://link.aip.org/link/?JAP/77/2978/1", + doi = "10.1063/1.358714", +} + +@Article{romano-rodriguez96, + title = "Detailed analysis of [beta]-Si{C} formation by high + dose carbon ion implantation in silicon", + journal = "Materials Science and Engineering B", + volume = "36", + number = "1-3", + pages = "282--285", + year = "1996", + note = "European Materials Research Society 1995 Spring + Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and + Oxygen in Silicon and in Other Elemental + Semiconductors", + ISSN = "0921-5107", + doi = "DOI: 10.1016/0921-5107(95)01283-4", + URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408", + author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio + and A. Pérez-Rodríguez and J. R. Morante and R. Kögler + and W. Skorupa", + keywords = "Silicon", + keywords = "Ion implantation", + notes = "incoherent 3c-sic precipitate", +} + +@Article{davidson75, + title = "The iterative calculation of a few of the lowest + eigenvalues and corresponding eigenvectors of large + real-symmetric matrices", + journal = "J. Comput. Phys.", + volume = "17", + number = "1", + pages = "87--94", + year = "1975", + note = "", + ISSN = "0021-9991", + doi = "DOI: 10.1016/0021-9991(75)90065-0", + URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650", + author = "Ernest R. Davidson", +} + +@Book{adorno_mm, + title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten + Leben", + author = "T. W. Adorno", + ISBN = "978-3-518-01236-9", + URL = "http://books.google.com/books?id=coZqRAAACAAJ", + year = "1994", + publisher = "Suhrkamp", +}