X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=a79bb6765e153d7dbc881393b4ed9e1cf8bd13f0;hp=c7019b9ee606a57b1263ae2957ff29bf1455bd70;hb=ca9d33ccbdd983e1c6290457825953e0ee6220d0;hpb=2b740e5bda4a90139d952a5efc5345e62747f955 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index c7019b9..a79bb67 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -2,6 +2,37 @@ % bibliography database % +@Article{schroedinger26, + author = "E. Schrödinger", + title = "Quantisierung als Eigenwertproblem", + journal = "Ann. Phys. (Leipzig)", + volume = "384", + number = "4", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19263840404", + doi = "10.1002/andp.19263840404", + pages = "361--376", + year = "1926", +} + +@Article{bloch29, + author = "Felix Bloch", + affiliation = "Institut d. Universität f. theor. Physik Leipzig", + title = "Über die Quantenmechanik der Elektronen in + Kristallgittern", + journal = "Z. Phys.", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0939-7922", + keyword = "Physics and Astronomy", + pages = "555--600", + volume = "52", + issue = "7", + URL = "http://dx.doi.org/10.1007/BF01339455", + note = "10.1007/BF01339455", + year = "1929", +} + @Article{albe_sic_pot, author = "Paul Erhart and Karsten Albe", title = "Analytical potential for atomistic simulations of @@ -24,6 +55,21 @@ doi = "10.1103/PhysRevB.71.035211", } +@Article{erhart04, + title = "The role of thermostats in modeling vapor phase + condensation of silicon nanoparticles", + journal = "Appl. Surf. Sci.", + volume = "226", + number = "1-3", + pages = "12--18", + year = "2004", + note = "EMRS 2003 Symposium F, Nanostructures from Clusters", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2003.11.003", + URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738", + author = "Paul Erhart and Karsten Albe", +} + @Article{albe2002, title = "Modeling the metal-semiconductor interaction: Analytical bond-order potential for platinum-carbon", @@ -42,7 +88,7 @@ @Article{newman65, title = "Vibrational absorption of carbon in silicon", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "26", number = "2", pages = "373--379", @@ -62,7 +108,7 @@ title = "Effect of Carbon on the Lattice Parameter of Silicon", publisher = "AIP", year = "1968", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "39", number = "9", pages = "4365--4368", @@ -73,7 +119,7 @@ @Article{bean71, title = "The solubility of carbon in pulled silicon crystals", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "32", number = "6", pages = "1211--1219", @@ -113,7 +159,7 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Appl. Phys. A: Mater. Sci. Process.", + journal = "Appl. Phys. A", volume = "76", pages = "827--835", month = mar, @@ -127,7 +173,7 @@ @Article{skorupa96, title = "Carbon-mediated effects in silicon and in silicon-related materials", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "44", number = "2", pages = "101--143", @@ -248,7 +294,7 @@ author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon Diablo", - journal = "Comptes rendus de l'Académie des Sciences", + journal = "C. R. Acad. Sci.", volume = "139", pages = "773--786", year = "1904", @@ -266,7 +312,7 @@ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and Calvin H. Carter Jr. and D. Asbury", title = "Si{C} Seeded Boule Growth", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "3--8", year = "1998", @@ -524,6 +570,22 @@ entropy calculations", } +@Article{munro99, + title = "Defect migration in crystalline silicon", + author = "Lindsey J. Munro and David J. Wales", + journal = "Phys. Rev. B", + volume = "59", + number = "6", + pages = "3969--3980", + numpages = "11", + year = "1999", + month = feb, + doi = "10.1103/PhysRevB.59.3969", + publisher = "American Physical Society", + notes = "eigenvector following method, vacancy and interstiial + defect migration mechanisms", +} + @Article{colombo02, title = "Tight-binding theory of native point defects in silicon", @@ -555,6 +617,23 @@ silicon, si self interstitials, free energy", } +@Article{mattsson08, + title = "Electronic surface error in the Si interstitial + formation energy", + author = "Ann E. Mattsson and Ryan R. Wixom and Rickard + Armiento", + journal = "Phys. Rev. B", + volume = "77", + number = "15", + pages = "155211", + numpages = "7", + year = "2008", + month = apr, + doi = "10.1103/PhysRevB.77.155211", + publisher = "American Physical Society", + notes = "si self interstitial formation energies by dft", +} + @Article{goedecker02, title = "A Fourfold Coordinated Point Defect in Silicon", author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", @@ -924,7 +1003,7 @@ @Article{bean70, title = "Low temperature electron irradiation of silicon containing carbon", - journal = "Solid State Communications", + journal = "Solid State Commun.", volume = "8", number = "3", pages = "175--177", @@ -1009,7 +1088,7 @@ silicon", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "6", pages = "3815--3820", @@ -1054,7 +1133,7 @@ @Article{foell77, title = "The formation of swirl defects in silicon by agglomeration of self-interstitials", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "40", number = "1", pages = "90--108", @@ -1071,7 +1150,7 @@ @Article{foell81, title = "Microdefects in silicon and their relation to point defects", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "52", number = "Part 2", pages = "907--916", @@ -1108,8 +1187,8 @@ @InProceedings{werner96, author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. Eichler", - booktitle = "Ion Implantation Technology. Proceedings of the 11th - International Conference on", + booktitle = "Proceedings of the 11th International Conference on + Ion Implantation Technology.", title = "{TEM} investigation of {C}-Si defects in carbon implanted silicon", year = "1996", @@ -1149,7 +1228,7 @@ silicon", publisher = "AIP", year = "1984", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "45", number = "3", pages = "268--269", @@ -1169,7 +1248,7 @@ Ge[sup + ] and {C}[sup + ] implantation", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "57", number = "22", pages = "2345--2347", @@ -1188,7 +1267,7 @@ title = "Metastable SiGe{C} formation by solid phase epitaxy", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "63", number = "20", pages = "2786--2788", @@ -1201,6 +1280,27 @@ doi = "10.1063/1.110334", } +@Article{goorsky92, + author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F. + Legoues and J. Angilello and F. Cardone", + collaboration = "", + title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si + strained layer superlattices", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "22", + pages = "2758--2760", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; + CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS + RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; + DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS", + URL = "http://link.aip.org/link/?APL/60/2758/1", + doi = "10.1063/1.106868", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -1271,6 +1371,24 @@ doi = "doi:10.1016/j.nimb.2006.12.118", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Periodically arranged, selforganised, nanometric, + amorphous precipitates have been observed after + high-fluence ion implantations into solids for a number + of ion/target combinations at certain implantation + conditions. A model describing the ordering process + based on compressive stress exerted by the amorphous + inclusions as a result of the density change upon + amorphisation is introduced. A Monte Carlo simulation + code, which focuses on high-fluence carbon + implantations into silicon, is able to reproduce + experimentally observed nanolamella distributions as + well as the formation of continuous amorphous layers. + By means of simulation, the selforganisation process + becomes traceable and detailed information about the + compositional and structural state during the ordering + process is obtained. Based on simulation results, a + recipe is proposed for producing broad distributions of + ordered lamellar structures.", } @Article{zirkelbach2006, @@ -1289,6 +1407,17 @@ doi = "doi:10.1016/j.nimb.2005.08.162", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "High-dose ion implantation of materials that undergo + drastic density change upon amorphization at certain + implantation conditions results in periodically + arranged, self-organized, nanometric configurations of + the amorphous phase. A simple model explaining the + phenomenon is introduced and implemented in a + Monte-Carlo simulation code. Through simulation + conditions for observing lamellar precipitates are + specified and additional information about the + compositional and structural state during the ordering + process is gained.", } @Article{zirkelbach2005, @@ -1307,6 +1436,21 @@ doi = "doi:10.1016/j.commatsci.2004.12.016", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Ion irradiation of materials, which undergo a drastic + density change upon amorphization have been shown to + exhibit selforganized, nanometric structures of the + amorphous phase in the crystalline host lattice. In + order to better understand the process a + Monte-Carlo-simulation code based on a simple model is + developed. In the present work we focus on high-dose + carbon implantations into silicon. The simulation is + able to reproduce results gained by cross-sectional TEM + measurements of high-dose carbon implanted silicon. + Necessary conditions can be specified for the + self-organization process and information is gained + about the compositional and structural state during the + ordering process which is difficult to be obtained by + experiment.", } @Article{zirkelbach09, @@ -1331,6 +1475,22 @@ keywords = "Nucleation", keywords = "Defect formation", keywords = "Molecular dynamics simulations", + abstract = "The precipitation process of silicon carbide in + heavily carbon doped silicon is not yet fully + understood. High resolution transmission electron + microscopy observations suggest that in a first step + carbon atoms form C-Si dumbbells on regular Si lattice + sites which agglomerate into large clusters. In a + second step, when the cluster size reaches a radius of + a few nm, the high interfacial energy due to the SiC/Si + lattice misfit of almost 20\% is overcome and the + precipitation occurs. By simulation, details of the + precipitation process can be obtained on the atomic + level. A recently proposed parametrization of a + Tersoff-like bond order potential is used to model the + system appropriately. Preliminary results gained by + molecular dynamics simulations using this potential are + presented.", } @Article{zirkelbach10, @@ -1347,29 +1507,73 @@ month = sep, doi = "10.1103/PhysRevB.82.094110", publisher = "American Physical Society", -} - -@Article{zirkelbach11a, - title = "First principles study of defects in carbon implanted - silicon", - journal = "to be published", - volume = "", - number = "", - pages = "", - year = "2011", - author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner - and W. G. Schmidt and E. Rauls", -} - -@Article{zirkelbach11b, - title = "...", - journal = "to be published", + abstract = "A comparative theoretical investigation of carbon + interstitials in silicon is presented. Calculations + using classical potentials are compared to + first-principles density-functional theory calculations + of the geometries, formation, and activation energies + of the carbon dumbbell interstitial, showing the + importance of a quantum-mechanical description of this + system. In contrast to previous studies, the present + first-principles calculations of the interstitial + carbon migration path yield an activation energy that + excellently matches the experiment. The bond-centered + interstitial configuration shows a net magnetization of + two electrons, illustrating the need for spin-polarized + calculations.", +} + +@Article{zirkelbach11, + title = "Combined ab initio and classical potential simulation + study on the silicon carbide precipitation in silicon", + journal = "accepted for publication in Phys. Rev. B", volume = "", number = "", pages = "", year = "2011", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. K. N. Lindner and W. G. Schmidt and E. Rauls", + abstract = "Atomistic simulations on the silicon carbide + precipitation in bulk silicon employing both, classical + potential and first-principles methods are presented. + The calculations aim at a comprehensive, microscopic + understanding of the precipitation mechanism in the + context of controversial discussions in the literature. + For the quantum-mechanical treatment, basic processes + assumed in the precipitation process are calculated in + feasible systems of small size. The migration mechanism + of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1 + 1 0> self-interstitial in otherwise defect-free silicon + are investigated using density functional theory + calculations. The influence of a nearby vacancy, + another carbon interstitial and a substitutional defect + as well as a silicon self-interstitial has been + investigated systematically. Interactions of various + combinations of defects have been characterized + including a couple of selected migration pathways + within these configurations. Almost all of the + investigated pairs of defects tend to agglomerate + allowing for a reduction in strain. The formation of + structures involving strong carbon-carbon bonds turns + out to be very unlikely. In contrast, substitutional + carbon occurs in all probability. A long range capture + radius has been observed for pairs of interstitial + carbon as well as interstitial carbon and vacancies. A + rather small capture radius is predicted for + substitutional carbon and silicon self-interstitials. + Initial assumptions regarding the precipitation + mechanism of silicon carbide in bulk silicon are + established and conformability to experimental findings + is discussed. Furthermore, results of the accurate + first-principles calculations on defects and carbon + diffusion in silicon are compared to results of + classical potential simulations revealing significant + limitations of the latter method. An approach to work + around this problem is proposed. Finally, results of + the classical potential molecular dynamics simulations + of large systems are examined, which reinforce previous + assumptions and give further insight into basic + processes involved in the silicon carbide transition.", } @Article{lindner95, @@ -1377,7 +1581,7 @@ Rauschenbach and B. Stritzker", title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} Layers in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "354", number = "", pages = "171", @@ -1391,7 +1595,7 @@ @Article{lindner96, title = "Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "46", number = "2-3", pages = "147--155", @@ -1409,8 +1613,7 @@ @Article{calcagno96, title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by ion implantation", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "120", number = "1-4", pages = "121--124", @@ -1428,7 +1631,7 @@ @Article{lindner98, title = "Mechanisms of Si{C} Formation in the Ion Beam Synthesis of 3{C}-Si{C} Layers in Silicon", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "215--218", year = "1998", @@ -1522,7 +1725,7 @@ title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial growth", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "238", number = "1-4", pages = "159--164", @@ -1540,7 +1743,7 @@ title = "Organometallic vapor phase epitaxial growth of Ga{N} on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion implantation into Si(1 1 1) substrate", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "261", number = "2-3", pages = "266--270", @@ -1557,7 +1760,7 @@ @Article{liu_l02, title = "Substrates for gallium nitride epitaxy", - journal = "Materials Science and Engineering: R: Reports", + journal = "Mater. Sci. Eng., R", volume = "37", number = "3", pages = "61--127", @@ -1573,7 +1776,7 @@ @Article{takeuchi91, title = "Growth of single crystalline Ga{N} film on Si substrate using 3{C}-Si{C} as an intermediate layer", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "115", number = "1-4", pages = "634--638", @@ -1613,6 +1816,36 @@ doi = "10.1063/1.1730376", } +@Article{horsfield96, + title = "Bond-order potentials: Theory and implementation", + author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and + D. G. Pettifor and M. Aoki", + journal = "Phys. Rev. B", + volume = "53", + number = "19", + pages = "12694--12712", + numpages = "18", + year = "1996", + month = may, + doi = "10.1103/PhysRevB.53.12694", + publisher = "American Physical Society", +} + +@Article{abell85, + title = "Empirical chemical pseudopotential theory of molecular + and metallic bonding", + author = "G. C. Abell", + journal = "Phys. Rev. B", + volume = "31", + number = "10", + pages = "6184--6196", + numpages = "12", + year = "1985", + month = may, + doi = "10.1103/PhysRevB.31.6184", + publisher = "American Physical Society", +} + @Article{tersoff_si1, title = "New empirical model for the structural properties of silicon", @@ -1628,6 +1861,21 @@ publisher = "American Physical Society", } +@Article{dodson87, + title = "Development of a many-body Tersoff-type potential for + silicon", + author = "Brian W. Dodson", + journal = "Phys. Rev. B", + volume = "35", + number = "6", + pages = "2795--2798", + numpages = "3", + year = "1987", + month = feb, + doi = "10.1103/PhysRevB.35.2795", + publisher = "American Physical Society", +} + @Article{tersoff_si2, title = "New empirical approach for the structure and energy of covalent systems", @@ -1733,7 +1981,7 @@ @Article{davis91, author = "R. F. Davis and G. Kelner and M. Shur and J. W. Palmour and J. A. Edmond", - journal = "Proceedings of the IEEE", + journal = "Proc. IEEE", title = "Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide", @@ -1805,7 +2053,7 @@ @Article{sarro00, title = "Silicon carbide as a new {MEMS} technology", - journal = "Sensors and Actuators A: Physical", + journal = "Seonsor. Actuator. A", volume = "82", number = "1-3", pages = "210--218", @@ -1824,7 +2072,7 @@ title = "Status of silicon carbide (Si{C}) as a wide-bandgap semiconductor for high-temperature applications: {A} review", - journal = "Solid-State Electronics", + journal = "Solid-State Electron.", volume = "39", number = "10", pages = "1409--1422", @@ -1839,7 +2087,7 @@ @Article{giancarli98, title = "Design requirements for Si{C}/Si{C} composites structural material in fusion power reactor blankets", - journal = "Fusion Engineering and Design", + journal = "Fusion Eng. Des.", volume = "41", number = "1-4", pages = "165--171", @@ -1853,7 +2101,7 @@ @Article{pensl93, title = "Electrical and optical characterization of Si{C}", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "185", number = "1-4", pages = "264--283", @@ -1882,7 +2130,7 @@ @Article{tairov81, title = "General principles of growing large-size single crystals of various silicon carbide polytypes", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "52", number = "Part 1", pages = "146--150", @@ -1896,7 +2144,7 @@ @Article{barrett91, title = "Si{C} boule growth by sublimation vapor transport", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "109", number = "1-4", pages = "17--23", @@ -1911,7 +2159,7 @@ @Article{barrett93, title = "Growth of large Si{C} single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "128", number = "1-4", pages = "358--362", @@ -1929,7 +2177,7 @@ title = "Control of polytype formation by surface energy effects during the growth of Si{C} monocrystals by the sublimation method", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "131", number = "1-2", pages = "71--74", @@ -1986,7 +2234,7 @@ Single-Crystal Films on Si", publisher = "ECS", year = "1987", - journal = "Journal of The Electrochemical Society", + journal = "J. Electrochem. Soc.", volume = "134", number = "6", pages = "1558--1565", @@ -2005,7 +2253,7 @@ off-axis Si substrates", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "11", pages = "823--825", @@ -2021,7 +2269,7 @@ @Article{ueda90, title = "Crystal growth of Si{C} by step-controlled epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "104", number = "3", pages = "695--700", @@ -2063,7 +2311,7 @@ vicinal (0001) 6{H}-Si{C} wafers", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "15", pages = "1442--1444", @@ -2084,7 +2332,7 @@ substrates", publisher = "AIP", year = "1988", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "64", number = "5", pages = "2672--2679", @@ -2128,7 +2376,7 @@ substrates", publisher = "AIP", year = "1988", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "63", number = "8", pages = "2645--2650", @@ -2150,7 +2398,7 @@ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", publisher = "AIP", year = "1991", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "59", number = "3", pages = "333--335", @@ -2185,7 +2433,7 @@ @Article{kaneda87, title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric properties of its p-n junction", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "81", number = "1-4", pages = "536--542", @@ -2243,7 +2491,7 @@ level using surface superstructures", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "9", pages = "1204--1206", @@ -2295,7 +2543,7 @@ by ion implantation", publisher = "Taylor \& Francis", year = "1976", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "29", number = "1", pages = "13--15", @@ -2311,7 +2559,7 @@ by high doses of 70 and 310 ke{V} carbon ions", publisher = "Taylor \& Francis", year = "1980", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "48", number = "1", pages = "7", @@ -2360,13 +2608,13 @@ compounds formed in silicon by ion beam synthesis", publisher = "Taylor \& Francis", year = "1986", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "99", number = "1", pages = "71--81", URL = "http://www.informaworld.com/10.1080/00337578608209614", - notes = "ibs, comparison with sio and sin, higher temp or - time", + notes = "ibs, comparison with sio and sin, higher temp or time, + no c redistribution", } @Article{reeson87, @@ -2395,7 +2643,7 @@ title = "High-temperature ion beam synthesis of cubic Si{C}", publisher = "AIP", year = "1990", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "67", number = "6", pages = "2908--2912", @@ -2434,7 +2682,7 @@ Netherlands", title = "Boron implantations in silicon: {A} comparison of charge carrier and boron concentration profiles", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A", publisher = "Springer Berlin / Heidelberg", ISSN = "0947-8396", keyword = "Physics and Astronomy", @@ -2455,7 +2703,7 @@ implanted boron into silicon", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "50", number = "7", pages = "416--418", @@ -2476,7 +2724,7 @@ profiles", publisher = "AIP", year = "1990", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "68", number = "12", pages = "6191--6198", @@ -2587,7 +2835,7 @@ author = "E Kasper", title = "Superlattices of group {IV} elements, a new possibility to produce direct band gap material", - journal = "Physica Scripta", + journal = "Phys. Scr.", volume = "T35", pages = "232--236", URL = "http://stacks.iop.org/1402-4896/T35/232", @@ -2604,7 +2852,7 @@ Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "24", pages = "3033--3035", @@ -2642,7 +2890,7 @@ @Article{powell93_2, title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties of the ternary system", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "127", number = "1-4", pages = "425--429", @@ -2659,7 +2907,7 @@ author = "H. J. Osten", title = "Modification of Growth Modes in Lattice-Mismatched Epitaxial Systems: Si/Ge", - journal = "physica status solidi (a)", + journal = "phys. status solidi (a)", volume = "145", number = "2", publisher = "WILEY-VCH Verlag", @@ -2693,7 +2941,7 @@ on Si(001) by adding small amounts of carbon", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "64", number = "25", pages = "3440--3442", @@ -2714,7 +2962,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "3", pages = "356--358", @@ -2746,6 +2994,20 @@ notes = "substitutional c in si by mbe", } +@Article{born27, + author = "M. Born and R. Oppenheimer", + title = "Zur Quantentheorie der Molekeln", + journal = "Ann. Phys. (Leipzig)", + volume = "389", + number = "20", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19273892002", + doi = "10.1002/andp.19273892002", + pages = "457--484", + year = "1927", +} + @Article{hohenberg64, title = "Inhomogeneous Electron Gas", author = "P. Hohenberg and W. Kohn", @@ -2761,6 +3023,51 @@ notes = "density functional theory, dft", } +@Article{thomas27, + title = "The calculation of atomic fields", + author = "L. H. Thomas", + journal = "Proc. Cambridge Philos. Soc.", + volume = "23", + pages = "542--548", + year = "1927", + doi = "10.1017/S0305004100011683", +} + +@Article{fermi27, + title = "", + author = "E. Fermi", + journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat. + Rend.", + volume = "6", + pages = "602", + year = "1927", +} + +@Article{hartree28, + title = "The Wave Mechanics of an Atom with a Non-Coulomb + Central Field. Part {I}. Theory and Methods", + author = "D. R. Hartree", + journal = "Proc. Cambridge Philos. Soc.", + volume = "24", + pages = "89--110", + year = "1928", + doi = "10.1017/S0305004100011919", +} + +@Article{slater29, + title = "The Theory of Complex Spectra", + author = "J. C. Slater", + journal = "Phys. Rev.", + volume = "34", + number = "10", + pages = "1293--1322", + numpages = "29", + year = "1929", + month = nov, + doi = "10.1103/PhysRev.34.1293", + publisher = "American Physical Society", +} + @Article{kohn65, title = "Self-Consistent Equations Including Exchange and Correlation Effects", @@ -2777,6 +3084,81 @@ notes = "dft, exchange and correlation", } +@Article{kohn96, + title = "Density Functional and Density Matrix Method Scaling + Linearly with the Number of Atoms", + author = "W. Kohn", + journal = "Phys. Rev. Lett.", + volume = "76", + number = "17", + pages = "3168--3171", + numpages = "3", + year = "1996", + month = apr, + doi = "10.1103/PhysRevLett.76.3168", + publisher = "American Physical Society", +} + +@Article{kohn98, + title = "Edge Electron Gas", + author = "Walter Kohn and Ann E. Mattsson", + journal = "Phys. Rev. Lett.", + volume = "81", + number = "16", + pages = "3487--3490", + numpages = "3", + year = "1998", + month = oct, + doi = "10.1103/PhysRevLett.81.3487", + publisher = "American Physical Society", +} + +@Article{kohn99, + title = "Nobel Lecture: Electronic structure of matter---wave + functions and density functionals", + author = "W. Kohn", + journal = "Rev. Mod. Phys.", + volume = "71", + number = "5", + pages = "1253--1266", + numpages = "13", + year = "1999", + month = oct, + doi = "10.1103/RevModPhys.71.1253", + publisher = "American Physical Society", +} + +@Article{payne92, + title = "Iterative minimization techniques for ab initio + total-energy calculations: molecular dynamics and + conjugate gradients", + author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A. + Arias and J. D. Joannopoulos", + journal = "Rev. Mod. Phys.", + volume = "64", + number = "4", + pages = "1045--1097", + numpages = "52", + year = "1992", + month = oct, + doi = "10.1103/RevModPhys.64.1045", + publisher = "American Physical Society", +} + +@Article{levy82, + title = "Electron densities in search of Hamiltonians", + author = "Mel Levy", + journal = "Phys. Rev. A", + volume = "26", + number = "3", + pages = "1200--1208", + numpages = "8", + year = "1982", + month = sep, + doi = "10.1103/PhysRevA.26.1200", + publisher = "American Physical Society", +} + @Article{ruecker94, title = "Strain-stabilized highly concentrated pseudomorphic $Si1-x$$Cx$ layers in Si", @@ -2801,7 +3183,7 @@ by Low-Temperature Chemical Vapor Deposition", author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and Yuichi Yoneyama and Akira Yamada and Makoto Konagai", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "41", number = "Part 1, No. 4B", pages = "2472--2475", @@ -2837,7 +3219,7 @@ y] layers on Si(001)", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "65", number = "26", pages = "3356--3358", @@ -2859,7 +3241,7 @@ y]{C}[sub y] on Si(001)", publisher = "AIP", year = "1996", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "80", number = "12", pages = "6711--6715", @@ -3211,7 +3593,7 @@ @Article{chaussende07, author = "D. Chaussende and P. J. Wellmann and M. Pons", title = "Status of Si{C} bulk growth processes", - journal = "Journal of Physics D: Applied Physics", + journal = "J. Phys. D", volume = "40", number = "20", pages = "6150", @@ -3323,7 +3705,7 @@ Heteroepitaxial Growth", publisher = "WILEY-VCH Verlag", year = "1997", - journal = "physica status solidi (b)", + journal = "phys. status solidi (b)", volume = "202", pages = "405--420", URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", @@ -3407,7 +3789,7 @@ @Article{hornstra58, title = "Dislocations in the diamond lattice", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "5", number = "1-2", pages = "129--141", @@ -3609,6 +3991,22 @@ notes = "paw method", } +@InCollection{cohen70, + title = "The Fitting of Pseudopotentials to Experimental Data + and Their Subsequent Application", + editor = "Frederick Seitz Henry Ehrenreich and David Turnbull", + booktitle = "", + publisher = "Academic Press", + year = "1970", + volume = "24", + pages = "37--248", + series = "Solid State Physics", + ISSN = "0081-1947", + doi = "DOI: 10.1016/S0081-1947(08)60070-3", + URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3", + author = "Marvin L. Cohen and Volker Heine", +} + @Article{hamann79, title = "Norm-Conserving Pseudopotentials", author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang", @@ -3624,6 +4022,21 @@ notes = "norm-conserving pseudopotentials", } +@Article{troullier91, + title = "Efficient pseudopotentials for plane-wave + calculations", + author = "N. Troullier and Jos\'e Luriaas Martins", + journal = "Phys. Rev. B", + volume = "43", + number = "3", + pages = "1993--2006", + numpages = "13", + year = "1991", + month = jan, + doi = "10.1103/PhysRevB.43.1993", + publisher = "American Physical Society", +} + @Article{vanderbilt90, title = "Soft self-consistent pseudopotentials in a generalized eigenvalue formalism", @@ -3640,6 +4053,36 @@ notes = "vasp pseudopotentials", } +@Article{ceperley80, + title = "Ground State of the Electron Gas by a Stochastic + Method", + author = "D. M. Ceperley and B. J. Alder", + journal = "Phys. Rev. Lett.", + volume = "45", + number = "7", + pages = "566--569", + numpages = "3", + year = "1980", + month = aug, + doi = "10.1103/PhysRevLett.45.566", + publisher = "American Physical Society", +} + +@Article{perdew81, + title = "Self-interaction correction to density-functional + approximations for many-electron systems", + author = "J. P. Perdew and Alex Zunger", + journal = "Phys. Rev. B", + volume = "23", + number = "10", + pages = "5048--5079", + numpages = "31", + year = "1981", + month = may, + doi = "10.1103/PhysRevB.23.5048", + publisher = "American Physical Society", +} + @Article{perdew86, title = "Accurate and simple density functional for the electronic exchange energy: Generalized gradient @@ -3660,7 +4103,7 @@ @Article{perdew02, title = "Generalized gradient approximations for exchange and correlation: {A} look backward and forward", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "172", number = "1-2", pages = "1--6", @@ -3692,6 +4135,20 @@ notes = "gga pw91 (as in vasp)", } +@Article{chadi73, + title = "Special Points in the Brillouin Zone", + author = "D. J. Chadi and Marvin L. Cohen", + journal = "Phys. Rev. B", + volume = "8", + number = "12", + pages = "5747--5753", + numpages = "6", + year = "1973", + month = dec, + doi = "10.1103/PhysRevB.8.5747", + publisher = "American Physical Society", +} + @Article{baldereschi73, title = "Mean-Value Point in the Brillouin Zone", author = "A. Baldereschi", @@ -3707,6 +4164,20 @@ notes = "mean value k point", } +@Article{monkhorst76, + title = "Special points for Brillouin-zone integrations", + author = "Hendrik J. Monkhorst and James D. Pack", + journal = "Phys. Rev. B", + volume = "13", + number = "12", + pages = "5188--5192", + numpages = "4", + year = "1976", + month = jun, + doi = "10.1103/PhysRevB.13.5188", + publisher = "American Physical Society", +} + @Article{zhu98, title = "Ab initio pseudopotential calculations of dopant diffusion in Si", @@ -3985,7 +4456,7 @@ @Article{losev28, title = "Luminous carborundum detector and detection effect and oscillations with crystals", - journal = "Philosophical Magazine Series 7", + journal = "Philos. Mag. Series 7", volume = "6", number = "39", pages = "1024--1044", @@ -4045,7 +4516,7 @@ title = "Growth and Properties of beta-Si{C} Single Crystals", publisher = "AIP", year = "1966", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "37", number = "1", pages = "333--336", @@ -4083,7 +4554,7 @@ title = "Electronic Conduction in Silicon Carbide", publisher = "AIP", year = "1953", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "21", number = "5", pages = "821--827", @@ -4118,7 +4589,7 @@ improved external quantum efficiency", publisher = "AIP", year = "1982", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "53", number = "10", pages = "6962--6967", @@ -4212,7 +4683,7 @@ single crystals by physical vapor transport", publisher = "AIP", year = "1998", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "72", number = "13", pages = "1632--1634", @@ -4230,7 +4701,7 @@ title = "Antiphase boundaries in epitaxially grown beta-Si{C}", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "50", number = "4", pages = "221--223", @@ -4247,7 +4718,7 @@ @Article{shibahara86, title = "Surface morphology of cubic Si{C}(100) grown on Si(100) by chemical vapor deposition", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "78", number = "3", pages = "538--544", @@ -4267,7 +4738,7 @@ title = "Step-flow epitaxial growth on two-domain surfaces", publisher = "AIP", year = "1996", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "79", number = "3", pages = "1423--1434", @@ -4285,7 +4756,7 @@ carbonization of silicon", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "3", pages = "2070--2073", @@ -4300,7 +4771,7 @@ @Article{fuyuki89, title = "Atomic layer epitaxy of cubic Si{C} by gas source {MBE} using surface superstructure", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "95", number = "1-4", pages = "461--463", @@ -4323,7 +4794,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "7", pages = "824--826", @@ -4338,7 +4809,7 @@ @Article{yoshinobu90, title = "Atomic level control in gas source {MBE} growth of cubic Si{C}", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "99", number = "1-4", pages = "520--524", @@ -4396,7 +4867,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "65", number = "22", pages = "2851--2853", @@ -4415,7 +4886,7 @@ 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", publisher = "WILEY-VCH Verlag", year = "1997", - journal = "physica status solidi (b)", + journal = "phys. status solidi (b)", volume = "202", pages = "359--378", notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower @@ -4424,7 +4895,7 @@ @Article{takaoka98, title = "Initial stage of Si{C} growth on Si(1 0 0) surface", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "183", number = "1-2", pages = "175--182", @@ -4446,7 +4917,7 @@ title = "Low-temperature heteroepitaxial growth of cubic Si{C} on Si using hydrocarbon radicals by gas source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "150", number = "Part 2", pages = "934--938", @@ -4463,7 +4934,7 @@ author = "Volker Heine and Ching Cheng and Richard J. Needs", title = "The Preference of Silicon Carbide for Growth in the Metastable Cubic Form", - journal = "Journal of the American Ceramic Society", + journal = "J. Am. Ceram. Soc.", volume = "74", number = "10", publisher = "Blackwell Publishing Ltd", @@ -4481,7 +4952,7 @@ @Article{allendorf91, title = "The adsorption of {H}-atoms on polycrystalline [beta]-silicon carbide", - journal = "Surface Science", + journal = "Surf. Sci.", volume = "258", number = "1-3", pages = "177--189", @@ -4501,7 +4972,7 @@ title = "Effect of {H} on Si molecular-beam epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "11", pages = "6615--6618", @@ -4517,7 +4988,7 @@ @Article{newman85, author = "Ronald C. Newman", title = "Carbon in Crystalline Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "403", @@ -4529,7 +5000,7 @@ @Article{newman61, title = "The diffusivity of carbon in silicon", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "19", number = "3-4", pages = "230--234", @@ -4545,7 +5016,7 @@ @Article{goesele85, author = "U. Gösele", title = "The Role of Carbon and Point Defects in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "419", @@ -4559,7 +5030,7 @@ title = "Defects in Carbon-Implanted Silicon", author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru Fukuoka and Haruo Saito", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "21", number = "Part 1, No. 2", pages = "399--400", @@ -4597,7 +5068,7 @@ high-dose carbon ion implantation in silicon", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "77", number = "7", pages = "2978--2984", @@ -4631,3 +5102,29 @@ keywords = "Ion implantation", notes = "incoherent 3c-sic precipitate", } + +@Article{davidson75, + title = "The iterative calculation of a few of the lowest + eigenvalues and corresponding eigenvectors of large + real-symmetric matrices", + journal = "J. Comput. Phys.", + volume = "17", + number = "1", + pages = "87--94", + year = "1975", + note = "", + ISSN = "0021-9991", + doi = "DOI: 10.1016/0021-9991(75)90065-0", + URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650", + author = "Ernest R. Davidson", +} + +@Book{adorno_mm, + title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten + Leben", + author = "T. W. Adorno", + ISBN = "978-3-518-01236-9", + URL = "http://books.google.com/books?id=coZqRAAACAAJ", + year = "1994", + publisher = "Suhrkamp", +}