X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=b10d7133ba43246319b2ce4f35b6e4ab81ab85e6;hp=372a642f5ac031151cc9bf528e44d78e8767e2e1;hb=0dcb7fdf6ce84ca5b32c251ffc8c82169448656d;hpb=1d5283e2031c9611f494a9a98d115f32cd9898de diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 372a642..b10d713 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -182,6 +182,36 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{nielsen83, + title = "First-Principles Calculation of Stress", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. Lett.", + volume = "50", + number = "9", + pages = "697--700", + numpages = "3", + year = "1983", + month = feb, + doi = "10.1103/PhysRevLett.50.697", + publisher = "American Physical Society", + notes = "generalization of virial theorem", +} + +@Article{nielsen85, + title = "Quantum-mechanical theory of stress and force", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. B", + volume = "32", + number = "6", + pages = "3780--3791", + numpages = "11", + year = "1985", + month = sep, + doi = "10.1103/PhysRevB.32.3780", + publisher = "American Physical Society", + notes = "dft virial stress and forces", +} + @Article{moissan04, author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon @@ -1470,6 +1500,33 @@ author = "W. Wesch", } +@Article{davis91, + author = "R. F. Davis and G. Kelner and M. Shur and J. W. + Palmour and J. A. Edmond", + journal = "Proceedings of the IEEE", + title = "Thin film deposition and microelectronic and + optoelectronic device fabrication and characterization + in monocrystalline alpha and beta silicon carbide", + year = "1991", + month = may, + volume = "79", + number = "5", + pages = "677--701", + keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky + diode;SiC;dry etching;electrical + contacts;etching;impurity incorporation;optoelectronic + device fabrication;solid-state devices;surface + chemistry;Schottky effect;Schottky gate field effect + transistors;Schottky-barrier + diodes;etching;heterojunction bipolar + transistors;insulated gate field effect + transistors;light emitting diodes;semiconductor + materials;semiconductor thin films;silicon compounds;", + doi = "10.1109/5.90132", + ISSN = "0018-9219", + notes = "sic growth methods", +} + @Article{morkoc94, author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E. Lin and B. Sverdlov and M. Burns", @@ -1491,18 +1548,6 @@ notes = "sic intro, properties", } -@Article{neudeck95, - author = "P. G. Neudeck", - title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} - {ELECTRONICS} {TECHNOLOGY}", - journal = "Journal of Electronic Materials", - year = "1995", - volume = "24", - number = "4", - pages = "283--288", - month = apr, -} - @Article{foo, author = "Noch Unbekannt", title = "How to find references", @@ -1619,6 +1664,54 @@ author = "Yu.M. Tairov and V. F. Tsvetkov", } +@Article{barrett91, + title = "Si{C} boule growth by sublimation vapor transport", + journal = "Journal of Crystal Growth", + volume = "109", + number = "1-4", + pages = "17--23", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90152-U", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1", + author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and + R. H. Hopkins and W. J. Choyke", +} + +@Article{barrett93, + title = "Growth of large Si{C} single crystals", + journal = "Journal of Crystal Growth", + volume = "128", + number = "1-4", + pages = "358--362", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90348-Z", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c", + author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and + R. H. Hopkins and P. G. McMullin and R. C. Clarke and + W. J. Choyke", +} + +@Article{stein93, + title = "Control of polytype formation by surface energy + effects during the growth of Si{C} monocrystals by the + sublimation method", + journal = "Journal of Crystal Growth", + volume = "131", + number = "1-2", + pages = "71--74", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90397-F", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d", + author = "R. A. Stein and P. Lanig", + notes = "6h and 4h, sublimation technique", +} + @Article{nishino83, author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. Will", @@ -1674,6 +1767,44 @@ notes = "blue light emitting diodes (led)", } +@Article{powell87_2, + author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and + C. M. Chorey and T. T. Cheng and P. Pirouz", + collaboration = "", + title = "Improved beta-Si{C} heteroepitaxial films using + off-axis Si substrates", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "51", + number = "11", + pages = "823--825", + keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED + COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE + STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING + FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES; + OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS", + URL = "http://link.aip.org/link/?APL/51/823/1", + doi = "10.1063/1.98824", + notes = "improved sic on off-axis si substrates, reduced apbs", +} + +@Article{ueda90, + title = "Crystal growth of Si{C} by step-controlled epitaxy", + journal = "Journal of Crystal Growth", + volume = "104", + number = "3", + pages = "695--700", + year = "1990", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(90)90013-B", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9", + author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki + Matsunami", + notes = "step-controlled epitaxy model", +} + @Article{kimoto93, author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo and Hiroyuki Matsunami", @@ -1693,6 +1824,49 @@ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } +@Article{powell90_2, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of high quality 6{H}-Si{C} epitaxial films on + vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1990", + journal = "Applied Physics Letters", + volume = "56", + number = "15", + pages = "1442--1444", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY; + TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS; + DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1442/1", + doi = "10.1063/1.102492", + notes = "cvd of 6h-sic on 6h-sic", +} + +@Article{kong88_2, + author = "H. S. Kong and J. T. Glass and R. F. Davis", + collaboration = "", + title = "Chemical vapor deposition and characterization of + 6{H}-Si{C} thin films on off-axis 6{H}-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "Journal of Applied Physics", + volume = "64", + number = "5", + pages = "2672--2679", + keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED + COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON + MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL + STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR + PHASE EPITAXY; CRYSTAL ORIENTATION", + URL = "http://link.aip.org/link/?JAP/64/2672/1", + doi = "10.1063/1.341608", +} + @Article{powell90, author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. J. Choyke and J. L. Bradshaw and L. Henderson and M. @@ -1715,6 +1889,48 @@ notes = "cvd of 3c-sic on 6h-sic", } +@Article{kong88, + author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A. + Rozgonyi and K. L. More", + collaboration = "", + title = "An examination of double positioning boundaries and + interface misfit in beta-Si{C} films on alpha-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "Journal of Applied Physics", + volume = "63", + number = "8", + pages = "2645--2650", + keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING + FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN + FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION; + MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE + STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS", + URL = "http://link.aip.org/link/?JAP/63/2645/1", + doi = "10.1063/1.341004", +} + +@Article{powell91, + author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G. + Jenkins and L. G. Matus and J. W. Yang and P. Pirouz + and W. J. Choyke and L. Clemen and M. Yoganathan", + collaboration = "", + title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films + on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1991", + journal = "Applied Physics Letters", + volume = "59", + number = "3", + pages = "333--335", + keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE + PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL + MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE", + URL = "http://link.aip.org/link/?APL/59/333/1", + doi = "10.1063/1.105587", +} + @Article{yuan95, author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. Thokala and M. J. Loboda", @@ -1736,6 +1952,23 @@ notes = "3c-sic on 6h-sic, cvd, reduced temperature", } +@Article{kaneda87, + title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric + properties of its p-n junction", + journal = "Journal of Crystal Growth", + volume = "81", + number = "1-4", + pages = "536--542", + year = "1987", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(87)90449-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1", + author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara + and Takao Tanaka", + notes = "first time ssmbe of 3c-sic on 6h-sic", +} + @Article{fissel95, title = "Epitaxial growth of Si{C} thin films on Si-stabilized [alpha]-Si{C}(0001) at low temperatures by solid-source @@ -1771,6 +2004,43 @@ notes = "mbe 3c-sic on si and 6h-sic", } +@Article{fissel96, + author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and + Bernd Schr{\"{o}}ter and Wolfgang Richter", + collaboration = "", + title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by + migration enhanced epitaxy controlled to an atomic + level using surface superstructures", + publisher = "AIP", + year = "1996", + journal = "Applied Physics Letters", + volume = "68", + number = "9", + pages = "1204--1206", + keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; + NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION; + SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?APL/68/1204/1", + doi = "10.1063/1.115969", + notes = "ss mbe sic, superstructure, reconstruction", +} + +@Article{righi03, + title = "Ab initio Simulations of Homoepitaxial Si{C} Growth", + author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and + C. M. Bertoni and A. Catellani", + journal = "Phys. Rev. Lett.", + volume = "91", + number = "13", + pages = "136101", + numpages = "4", + year = "2003", + month = sep, + doi = "10.1103/PhysRevLett.91.136101", + publisher = "American Physical Society", + notes = "dft calculations mbe sic growth", +} + @Article{borders71, author = "J. A. Borders and S. T. Picraux and W. Beezhold", collaboration = "", @@ -2350,6 +2620,19 @@ metastable", } +@Article{chaussende07, + author = "D. Chaussende and P. J. Wellmann and M. Pons", + title = "Status of Si{C} bulk growth processes", + journal = "Journal of Physics D: Applied Physics", + volume = "40", + number = "20", + pages = "6150", + URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02", + year = "2007", + notes = "review of sic single crystal growth methods, process + modelling", +} + @Article{feynman39, title = "Forces in Molecules", author = "R. P. Feynman", @@ -2446,6 +2729,20 @@ model, interface", } +@Article{kitabatake97, + author = "Makoto Kitabatake", + title = "Simulations and Experiments of 3{C}-Si{C}/Si + Heteroepitaxial Growth", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "physica status solidi (b)", + volume = "202", + pages = "405--420", + URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + notes = "3c-sic heteroepitaxial growth on si off-axis model", +} + @Article{chirita97, title = "Strain relaxation and thermal stability of the 3{C}-Si{C}(001)/Si(001) interface: {A} molecular @@ -3244,5 +3541,386 @@ optimization", URL = "http://link.aip.org/link/?JAP/53/6962/1", doi = "10.1063/1.330041", + notes = "blue led, sublimation process", } +@Article{neudeck95, + author = "Philip Neudeck", + affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark + Road 44135 Cleveland OH", + title = "Progress in silicon carbide semiconductor electronics + technology", + journal = "Journal of Electronic Materials", + publisher = "Springer Boston", + ISSN = "0361-5235", + keyword = "Chemistry and Materials Science", + pages = "283--288", + volume = "24", + issue = "4", + URL = "http://dx.doi.org/10.1007/BF02659688", + note = "10.1007/BF02659688", + year = "1995", + notes = "sic data, advantages of 3c sic", +} + +@Article{bhatnagar93, + author = "M. Bhatnagar and B. J. Baliga", + journal = "Electron Devices, IEEE Transactions on", + title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power + devices", + year = "1993", + month = mar, + volume = "40", + number = "3", + pages = "645--655", + keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky + rectifiers;Si;SiC;breakdown voltages;drift region + properties;output characteristics;power MOSFETs;power + semiconductor devices;switching characteristics;thermal + analysis;Schottky-barrier diodes;electric breakdown of + solids;insulated gate field effect transistors;power + transistors;semiconductor materials;silicon;silicon + compounds;solid-state rectifiers;thermal analysis;", + doi = "10.1109/16.199372", + ISSN = "0018-9383", + notes = "comparison 3c 6h sic and si devices", +} + +@Article{neudeck94, + author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. + A. Powell and C. S. Salupo and L. G. Matus", + journal = "Electron Devices, IEEE Transactions on", + title = "Electrical properties of epitaxial 3{C}- and + 6{H}-Si{C} p-n junction diodes produced side-by-side on + 6{H}-Si{C} substrates", + year = "1994", + month = may, + volume = "41", + number = "5", + pages = "826--835", + keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400 + C;6H-SiC layers;6H-SiC substrates;CVD + process;SiC;chemical vapor deposition;doping;electrical + properties;epitaxial layers;light + emission;low-tilt-angle 6H-SiC substrates;p-n junction + diodes;polytype;rectification characteristics;reverse + leakage current;reverse voltages;temperature;leakage + currents;power electronics;semiconductor + diodes;semiconductor epitaxial layers;semiconductor + growth;semiconductor materials;silicon + compounds;solid-state rectifiers;substrates;vapour + phase epitaxial growth;", + doi = "10.1109/16.285038", + ISSN = "0018-9383", + notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h + substrate", +} + +@Article{schulze98, + author = "N. Schulze and D. L. Barrett and G. Pensl", + collaboration = "", + title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C} + single crystals by physical vapor transport", + publisher = "AIP", + year = "1998", + journal = "Applied Physics Letters", + volume = "72", + number = "13", + pages = "1632--1634", + keywords = "silicon compounds; semiconductor materials; + semiconductor growth; crystal growth from vapour; + photoluminescence; Hall mobility", + URL = "http://link.aip.org/link/?APL/72/1632/1", + doi = "10.1063/1.121136", + notes = "micropipe free 6h-sic pvt growth", +} + +@Article{pirouz87, + author = "P. Pirouz and C. M. Chorey and J. A. Powell", + collaboration = "", + title = "Antiphase boundaries in epitaxially grown beta-Si{C}", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "50", + number = "4", + pages = "221--223", + keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON + MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL + VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION + ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE + BOUNDARIES", + URL = "http://link.aip.org/link/?APL/50/221/1", + doi = "10.1063/1.97667", + notes = "apb 3c-sic heteroepitaxy on si", +} + +@Article{shibahara86, + title = "Surface morphology of cubic Si{C}(100) grown on + Si(100) by chemical vapor deposition", + journal = "Journal of Crystal Growth", + volume = "78", + number = "3", + pages = "538--544", + year = "1986", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(86)90158-2", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9", + author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki + Matsunami", + notes = "defects in 3c-sis cvd on si, anti phase boundaries", +} + +@Article{desjardins96, + author = "P. Desjardins and J. E. Greene", + collaboration = "", + title = "Step-flow epitaxial growth on two-domain surfaces", + publisher = "AIP", + year = "1996", + journal = "Journal of Applied Physics", + volume = "79", + number = "3", + pages = "1423--1434", + keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY; + FILM GROWTH; SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?JAP/79/1423/1", + doi = "10.1063/1.360980", + notes = "apb model", +} + +@Article{henke95, + author = "S. Henke and B. Stritzker and B. Rauschenbach", + collaboration = "", + title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60] + carbonization of silicon", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "3", + pages = "2070--2073", + keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION; + FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL + STRUCTURE", + URL = "http://link.aip.org/link/?JAP/78/2070/1", + doi = "10.1063/1.360184", + notes = "ssmbe of sic on si, lower temperatures", +} + +@Article{fuyuki89, + title = "Atomic layer epitaxy of cubic Si{C} by gas source + {MBE} using surface superstructure", + journal = "Journal of Crystal Growth", + volume = "95", + number = "1-4", + pages = "461--463", + year = "1989", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(89)90442-9", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2", + author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo + Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami", + notes = "gas source mbe of 3c-sic on 6h-sic", +} + +@Article{yoshinobu92, + author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa + and Takashi Fuyuki and Hiroyuki Matsunami", + collaboration = "", + title = "Lattice-matched epitaxial growth of single crystalline + 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source + molecular beam epitaxy", + publisher = "AIP", + year = "1992", + journal = "Applied Physics Letters", + volume = "60", + number = "7", + pages = "824--826", + keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM + EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS; + INTERFACE STRUCTURE", + URL = "http://link.aip.org/link/?APL/60/824/1", + doi = "10.1063/1.107430", + notes = "gas source mbe of 3c-sic on 6h-sic", +} + +@Article{yoshinobu90, + title = "Atomic level control in gas source {MBE} growth of + cubic Si{C}", + journal = "Journal of Crystal Growth", + volume = "99", + number = "1-4", + pages = "520--524", + year = "1990", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(90)90575-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736", + author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu + Shiomi and Takashi Fuyuki and Hiroyuki Matsunami", + notes = "gas source mbe of 3c-sic on 3c-sic", +} + +@Article{fuyuki93, + title = "Atomic layer epitaxy controlled by surface + superstructures in Si{C}", + journal = "Thin Solid Films", + volume = "225", + number = "1-2", + pages = "225--229", + year = "1993", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(93)90159-M", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f", + author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki + Matsunami", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{hara93, + title = "Microscopic mechanisms of accurate layer-by-layer + growth of [beta]-Si{C}", + journal = "Thin Solid Films", + volume = "225", + number = "1-2", + pages = "240--243", + year = "1993", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(93)90162-I", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c", + author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai + and S. Misawa and E. Sakuma and S. Yoshida", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{tanaka94, + author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis", + collaboration = "", + title = "Effects of gas flow ratio on silicon carbide thin film + growth mode and polytype formation during gas-source + molecular beam epitaxy", + publisher = "AIP", + year = "1994", + journal = "Applied Physics Letters", + volume = "65", + number = "22", + pages = "2851--2853", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED; + TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; + NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS + FLOW; FLOW RATE", + URL = "http://link.aip.org/link/?APL/65/2851/1", + doi = "10.1063/1.112513", + notes = "gas source mbe of 6h-sic on 6h-sic", +} + +@Article{fuyuki97, + author = "T. Fuyuki and T. Hatayama and H. Matsunami", + title = "Heterointerface Control and Epitaxial Growth of + 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "physica status solidi (b)", + volume = "202", + pages = "359--378", + notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower + temperatures 750", +} + +@Article{takaoka98, + title = "Initial stage of Si{C} growth on Si(1 0 0) surface", + journal = "Journal of Crystal Growth", + volume = "183", + number = "1-2", + pages = "175--182", + year = "1998", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/S0022-0248(97)00391-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918", + author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki", + keywords = "Reflection high-energy electron diffraction (RHEED)", + keywords = "Scanning electron microscopy (SEM)", + keywords = "Silicon carbide", + keywords = "Silicon", + keywords = "Island growth", + notes = "lower temperature, 550-700", +} + +@Article{hatayama95, + title = "Low-temperature heteroepitaxial growth of cubic Si{C} + on Si using hydrocarbon radicals by gas source + molecular beam epitaxy", + journal = "Journal of Crystal Growth", + volume = "150", + number = "Part 2", + pages = "934--938", + year = "1995", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)80077-P", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e", + author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki + and Hiroyuki Matsunami", +} + +@Article{heine91, + author = "Volker Heine and Ching Cheng and Richard J. Needs", + title = "The Preference of Silicon Carbide for Growth in the + Metastable Cubic Form", + journal = "Journal of the American Ceramic Society", + volume = "74", + number = "10", + publisher = "Blackwell Publishing Ltd", + ISSN = "1551-2916", + URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x", + doi = "10.1111/j.1151-2916.1991.tb06811.x", + pages = "2630--2633", + keywords = "silicon carbide, crystal growth, crystal structure, + calculations, stability", + year = "1991", + notes = "3c-sic metastable, 3c-sic preferred growth, sic + polytype dft calculation refs", +} + +@Article{allendorf91, + title = "The adsorption of {H}-atoms on polycrystalline + [beta]-silicon carbide", + journal = "Surface Science", + volume = "258", + number = "1-3", + pages = "177--189", + year = "1991", + note = "", + ISSN = "0039-6028", + doi = "DOI: 10.1016/0039-6028(91)90912-C", + URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3", + author = "Mark D. Allendorf and Duane A. Outka", + notes = "h adsorption on 3c-sic", +} + +@Article{eaglesham93, + author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and + D. P. Adams and S. M. Yalisove", + collaboration = "", + title = "Effect of {H} on Si molecular-beam epitaxy", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "11", + pages = "6615--6618", + keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE + CONTAMINATION; SIMS; SEGREGATION; IMPURITIES; + DIFFUSION; ADSORPTION", + URL = "http://link.aip.org/link/?JAP/74/6615/1", + doi = "10.1063/1.355101", + notes = "h incorporation on si surface, lower surface + mobility", +}