X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=b10d7133ba43246319b2ce4f35b6e4ab81ab85e6;hp=a5bb8bd738ee6689222e8d3ab65b6d35aa16e5da;hb=0dcb7fdf6ce84ca5b32c251ffc8c82169448656d;hpb=2de138197288fafcfcbe01c1deff36099f946818 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index a5bb8bd..b10d713 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -182,6 +182,36 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{nielsen83, + title = "First-Principles Calculation of Stress", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. Lett.", + volume = "50", + number = "9", + pages = "697--700", + numpages = "3", + year = "1983", + month = feb, + doi = "10.1103/PhysRevLett.50.697", + publisher = "American Physical Society", + notes = "generalization of virial theorem", +} + +@Article{nielsen85, + title = "Quantum-mechanical theory of stress and force", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. B", + volume = "32", + number = "6", + pages = "3780--3791", + numpages = "11", + year = "1985", + month = sep, + doi = "10.1103/PhysRevB.32.3780", + publisher = "American Physical Society", + notes = "dft virial stress and forces", +} + @Article{moissan04, author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon @@ -1470,6 +1500,33 @@ author = "W. Wesch", } +@Article{davis91, + author = "R. F. Davis and G. Kelner and M. Shur and J. W. + Palmour and J. A. Edmond", + journal = "Proceedings of the IEEE", + title = "Thin film deposition and microelectronic and + optoelectronic device fabrication and characterization + in monocrystalline alpha and beta silicon carbide", + year = "1991", + month = may, + volume = "79", + number = "5", + pages = "677--701", + keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky + diode;SiC;dry etching;electrical + contacts;etching;impurity incorporation;optoelectronic + device fabrication;solid-state devices;surface + chemistry;Schottky effect;Schottky gate field effect + transistors;Schottky-barrier + diodes;etching;heterojunction bipolar + transistors;insulated gate field effect + transistors;light emitting diodes;semiconductor + materials;semiconductor thin films;silicon compounds;", + doi = "10.1109/5.90132", + ISSN = "0018-9219", + notes = "sic growth methods", +} + @Article{morkoc94, author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E. Lin and B. Sverdlov and M. Burns", @@ -1895,6 +1952,23 @@ notes = "3c-sic on 6h-sic, cvd, reduced temperature", } +@Article{kaneda87, + title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric + properties of its p-n junction", + journal = "Journal of Crystal Growth", + volume = "81", + number = "1-4", + pages = "536--542", + year = "1987", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(87)90449-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1", + author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara + and Takao Tanaka", + notes = "first time ssmbe of 3c-sic on 6h-sic", +} + @Article{fissel95, title = "Epitaxial growth of Si{C} thin films on Si-stabilized [alpha]-Si{C}(0001) at low temperatures by solid-source @@ -3795,3 +3869,58 @@ author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki and Hiroyuki Matsunami", } + +@Article{heine91, + author = "Volker Heine and Ching Cheng and Richard J. Needs", + title = "The Preference of Silicon Carbide for Growth in the + Metastable Cubic Form", + journal = "Journal of the American Ceramic Society", + volume = "74", + number = "10", + publisher = "Blackwell Publishing Ltd", + ISSN = "1551-2916", + URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x", + doi = "10.1111/j.1151-2916.1991.tb06811.x", + pages = "2630--2633", + keywords = "silicon carbide, crystal growth, crystal structure, + calculations, stability", + year = "1991", + notes = "3c-sic metastable, 3c-sic preferred growth, sic + polytype dft calculation refs", +} + +@Article{allendorf91, + title = "The adsorption of {H}-atoms on polycrystalline + [beta]-silicon carbide", + journal = "Surface Science", + volume = "258", + number = "1-3", + pages = "177--189", + year = "1991", + note = "", + ISSN = "0039-6028", + doi = "DOI: 10.1016/0039-6028(91)90912-C", + URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3", + author = "Mark D. Allendorf and Duane A. Outka", + notes = "h adsorption on 3c-sic", +} + +@Article{eaglesham93, + author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and + D. P. Adams and S. M. Yalisove", + collaboration = "", + title = "Effect of {H} on Si molecular-beam epitaxy", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "11", + pages = "6615--6618", + keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE + CONTAMINATION; SIMS; SEGREGATION; IMPURITIES; + DIFFUSION; ADSORPTION", + URL = "http://link.aip.org/link/?JAP/74/6615/1", + doi = "10.1063/1.355101", + notes = "h incorporation on si surface, lower surface + mobility", +}