X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=b10d7133ba43246319b2ce4f35b6e4ab81ab85e6;hp=cc27def399875e3a74c7c6a22deda09378088743;hb=0dcb7fdf6ce84ca5b32c251ffc8c82169448656d;hpb=c42b513e330b602ab4f44fdce76ced991f0a0f5c diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index cc27def..b10d713 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -68,7 +68,7 @@ author = "G. R. Fisher and P. Barnes", title = "Towards a unified view of polytypism in silicon carbide", - journal = "Philosophical Magazine Part B", + journal = "Philos. Mag. B", volume = "61", pages = "217--236", year = "1990", @@ -82,7 +82,7 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A: Mater. Sci. Process.", volume = "76", pages = "827--835", month = mar, @@ -92,6 +92,22 @@ carbon, both mechanisms explained + refs", } +@Article{skorupa96, + title = "Carbon-mediated effects in silicon and in + silicon-related materials", + journal = "Materials Chemistry and Physics", + volume = "44", + number = "2", + pages = "101--143", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/0254-0584(95)01673-I", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982", + author = "W. Skorupa and R. A. Yankov", + notes = "review of silicon carbon compound", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -166,6 +182,36 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{nielsen83, + title = "First-Principles Calculation of Stress", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. Lett.", + volume = "50", + number = "9", + pages = "697--700", + numpages = "3", + year = "1983", + month = feb, + doi = "10.1103/PhysRevLett.50.697", + publisher = "American Physical Society", + notes = "generalization of virial theorem", +} + +@Article{nielsen85, + title = "Quantum-mechanical theory of stress and force", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. B", + volume = "32", + number = "6", + pages = "3780--3791", + numpages = "11", + year = "1985", + month = sep, + doi = "10.1103/PhysRevB.32.3780", + publisher = "American Physical Society", + notes = "dft virial stress and forces", +} + @Article{moissan04, author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon @@ -218,7 +264,7 @@ title = "Molecular dynamics with coupling to an external bath", publisher = "AIP", year = "1984", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "81", number = "8", pages = "3684--3690", @@ -235,8 +281,7 @@ title = "Molecular dynamics determination of defect energetics in beta -Si{C} using three representative empirical potentials", - journal = "Modelling and Simulation in Materials Science and - Engineering", + journal = "Modell. Simul. Mater. Sci. Eng.", volume = "3", number = "5", pages = "615--627", @@ -318,8 +363,7 @@ @Article{devanathan98, title = "Computer simulation of a 10 ke{V} Si displacement cascade in Si{C}", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "141", number = "1-4", pages = "118--122", @@ -334,7 +378,7 @@ @Article{devanathan98_2, title = "Displacement threshold energies in [beta]-Si{C}", - journal = "Journal of Nuclear Materials", + journal = "J. Nucl. Mater.", volume = "253", number = "1-3", pages = "47--52", @@ -386,7 +430,7 @@ presence of carbon and boron", publisher = "AIP", year = "1998", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "84", number = "4", pages = "1963--1967", @@ -515,7 +559,7 @@ @Article{hobler05, title = "Ab initio calculations of the interaction between native point defects in silicon", - journal = "Materials Science and Engineering: B", + journal = "Mater. Sci. Eng., B", volume = "124-125", number = "", pages = "368--371", @@ -600,11 +644,10 @@ @Article{gao02, title = "Empirical potential approach for defect properties in 3{C}-Si{C}", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "191", number = "1-4", - pages = "504--508", + pages = "487--496", year = "2002", note = "", ISSN = "0168-583X", @@ -643,7 +686,7 @@ in cubic silicon carbide", publisher = "AIP", year = "2007", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "90", number = "22", eid = "221915", @@ -750,7 +793,7 @@ interactions in Si", publisher = "AIP", year = "2002", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "80", number = "1", pages = "52--54", @@ -898,7 +941,7 @@ author = "A K Tipping and R C Newman", title = "The diffusion coefficient of interstitial carbon in silicon", - journal = "Semiconductor Science and Technology", + journal = "Semicond. Sci. Technol.", volume = "2", number = "5", pages = "315--317", @@ -924,7 +967,7 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - journal = "Materials Science and Engineering B", + journal = "Mater. Sci. Eng., B", volume = "89", number = "1-3", pages = "241--245", @@ -945,7 +988,7 @@ silicon by transmission electron microscopy", publisher = "AIP", year = "1997", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "70", number = "2", pages = "252--254", @@ -983,7 +1026,7 @@ title = "Carbon diffusion in silicon", publisher = "AIP", year = "1998", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "73", number = "17", pages = "2465--2467", @@ -1004,7 +1047,7 @@ y]{C}[sub y]/Si heterostructures", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "6", pages = "3656--3668", @@ -1025,7 +1068,7 @@ strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "77", number = "5", pages = "1934--1937", @@ -1107,7 +1150,7 @@ @Article{zirkelbach09, title = "Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon", - journal = "Materials Science and Engineering: B", + journal = "Mater. Sci. Eng., B", volume = "159-160", number = "", pages = "149--152", @@ -1131,17 +1174,21 @@ @Article{zirkelbach10a, title = "Defects in carbon implanted silicon calculated by classical potentials and first-principles methods", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", journal = "Phys. Rev. B", volume = "82", number = "9", - pages = "", + pages = "094110", + numpages = "6", year = "2010", - author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. - K. N. Lindner and W. G. Schmidt and E. Rauls", + month = sep, + doi = "10.1103/PhysRevB.82.094110", + publisher = "American Physical Society", } @Article{zirkelbach10b, - title = "Extensive first principles study of carbon defects in + title = "First principles study of defects in carbon implanted silicon", journal = "to be published", volume = "", @@ -1167,8 +1214,7 @@ title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "147", number = "1-4", pages = "249--255", @@ -1184,8 +1230,7 @@ @Article{lindner99_2, title = "Mechanisms in the ion beam synthesis of Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "148", number = "1-4", pages = "528--533", @@ -1200,8 +1245,7 @@ @Article{lindner01, title = "Ion beam synthesis of buried Si{C} layers in silicon: Basic physical processes", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "178", number = "1-4", pages = "44--54", @@ -1229,7 +1273,7 @@ title = "On the balance between ion beam induced nanoparticle formation and displacive precipitate resolution in the {C}-Si system", - journal = "Materials Science and Engineering: C", + journal = "Mater. Sci. Eng., C", volume = "26", number = "5-7", pages = "857--861", @@ -1259,15 +1303,66 @@ URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c", author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase and S. Nishio and K. Yasuda and Y. Ishigami", + notes = "gan on 3c-sic, focus on ibs of 3c-sic", +} + +@Article{yamamoto04, + title = "Organometallic vapor phase epitaxial growth of Ga{N} + on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion + implantation into Si(1 1 1) substrate", + journal = "Journal of Crystal Growth", + volume = "261", + number = "2-3", + pages = "266--270", + year = "2004", + note = "Proceedings of the 11th Biennial (US) Workshop on + Organometallic Vapor Phase Epitaxy (OMVPE)", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2003.11.041", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166", + author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M. + Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito", notes = "gan on 3c-sic", } +@Article{liu_l02, + title = "Substrates for gallium nitride epitaxy", + journal = "Materials Science and Engineering: R: Reports", + volume = "37", + number = "3", + pages = "61--127", + year = "2002", + note = "", + ISSN = "0927-796X", + doi = "DOI: 10.1016/S0927-796X(02)00008-6", + URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401", + author = "L. Liu and J. H. Edgar", + notes = "gan substrates", +} + +@Article{takeuchi91, + title = "Growth of single crystalline Ga{N} film on Si + substrate using 3{C}-Si{C} as an intermediate layer", + journal = "Journal of Crystal Growth", + volume = "115", + number = "1-4", + pages = "634--638", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90817-O", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140", + author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa + Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki", + notes = "gan on 3c-sic (first time?)", +} + @Article{alder57, author = "B. J. Alder and T. E. Wainwright", title = "Phase Transition for a Hard Sphere System", publisher = "AIP", year = "1957", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "27", number = "5", pages = "1208--1209", @@ -1280,7 +1375,7 @@ title = "Studies in Molecular Dynamics. {I}. General Method", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "31", number = "2", pages = "459--466", @@ -1393,8 +1488,7 @@ @Article{wesch96, title = "Silicon carbide: synthesis and processing", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "116", number = "1-4", pages = "305--321", @@ -1406,6 +1500,33 @@ author = "W. Wesch", } +@Article{davis91, + author = "R. F. Davis and G. Kelner and M. Shur and J. W. + Palmour and J. A. Edmond", + journal = "Proceedings of the IEEE", + title = "Thin film deposition and microelectronic and + optoelectronic device fabrication and characterization + in monocrystalline alpha and beta silicon carbide", + year = "1991", + month = may, + volume = "79", + number = "5", + pages = "677--701", + keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky + diode;SiC;dry etching;electrical + contacts;etching;impurity incorporation;optoelectronic + device fabrication;solid-state devices;surface + chemistry;Schottky effect;Schottky gate field effect + transistors;Schottky-barrier + diodes;etching;heterojunction bipolar + transistors;insulated gate field effect + transistors;light emitting diodes;semiconductor + materials;semiconductor thin films;silicon compounds;", + doi = "10.1109/5.90132", + ISSN = "0018-9219", + notes = "sic growth methods", +} + @Article{morkoc94, author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E. Lin and B. Sverdlov and M. Burns", @@ -1414,7 +1535,7 @@ ZnSe-based semiconductor device technologies", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "3", pages = "1363--1398", @@ -1427,18 +1548,6 @@ notes = "sic intro, properties", } -@Article{neudeck95, - author = "P. G. Neudeck", - title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR} - {ELECTRONICS} {TECHNOLOGY}", - journal = "Journal of Electronic Materials", - year = "1995", - volume = "24", - number = "4", - pages = "283--288", - month = apr, -} - @Article{foo, author = "Noch Unbekannt", title = "How to find references", @@ -1528,7 +1637,7 @@ @Article{tairov78, title = "Investigation of growth processes of ingots of silicon carbide single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "43", number = "2", pages = "209--212", @@ -1540,6 +1649,69 @@ author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{tairov81, + title = "General principles of growing large-size single + crystals of various silicon carbide polytypes", + journal = "Journal of Crystal Growth", + volume = "52", + number = "Part 1", + pages = "146--150", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90184-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529", + author = "Yu.M. Tairov and V. F. Tsvetkov", +} + +@Article{barrett91, + title = "Si{C} boule growth by sublimation vapor transport", + journal = "Journal of Crystal Growth", + volume = "109", + number = "1-4", + pages = "17--23", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90152-U", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1", + author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and + R. H. Hopkins and W. J. Choyke", +} + +@Article{barrett93, + title = "Growth of large Si{C} single crystals", + journal = "Journal of Crystal Growth", + volume = "128", + number = "1-4", + pages = "358--362", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90348-Z", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c", + author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and + R. H. Hopkins and P. G. McMullin and R. C. Clarke and + W. J. Choyke", +} + +@Article{stein93, + title = "Control of polytype formation by surface energy + effects during the growth of Si{C} monocrystals by the + sublimation method", + journal = "Journal of Crystal Growth", + volume = "131", + number = "1-2", + pages = "71--74", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90397-F", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d", + author = "R. A. Stein and P. Lanig", + notes = "6h and 4h, sublimation technique", +} + @Article{nishino83, author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. Will", @@ -1548,7 +1720,7 @@ cubic Si{C} for semiconductor devices", publisher = "AIP", year = "1983", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "42", number = "5", pages = "460--462", @@ -1567,7 +1739,7 @@ Si{C} on silicon", publisher = "AIP", year = "1987", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "61", number = "10", pages = "4889--4893", @@ -1595,6 +1767,44 @@ notes = "blue light emitting diodes (led)", } +@Article{powell87_2, + author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and + C. M. Chorey and T. T. Cheng and P. Pirouz", + collaboration = "", + title = "Improved beta-Si{C} heteroepitaxial films using + off-axis Si substrates", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "51", + number = "11", + pages = "823--825", + keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED + COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE + STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING + FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES; + OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS", + URL = "http://link.aip.org/link/?APL/51/823/1", + doi = "10.1063/1.98824", + notes = "improved sic on off-axis si substrates, reduced apbs", +} + +@Article{ueda90, + title = "Crystal growth of Si{C} by step-controlled epitaxy", + journal = "Journal of Crystal Growth", + volume = "104", + number = "3", + pages = "695--700", + year = "1990", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(90)90013-B", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9", + author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki + Matsunami", + notes = "step-controlled epitaxy model", +} + @Article{kimoto93, author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo and Hiroyuki Matsunami", @@ -1602,7 +1812,7 @@ epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "73", number = "2", pages = "726--732", @@ -1614,6 +1824,49 @@ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } +@Article{powell90_2, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of high quality 6{H}-Si{C} epitaxial films on + vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1990", + journal = "Applied Physics Letters", + volume = "56", + number = "15", + pages = "1442--1444", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY; + TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS; + DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1442/1", + doi = "10.1063/1.102492", + notes = "cvd of 6h-sic on 6h-sic", +} + +@Article{kong88_2, + author = "H. S. Kong and J. T. Glass and R. F. Davis", + collaboration = "", + title = "Chemical vapor deposition and characterization of + 6{H}-Si{C} thin films on off-axis 6{H}-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "Journal of Applied Physics", + volume = "64", + number = "5", + pages = "2672--2679", + keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED + COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON + MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL + STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR + PHASE EPITAXY; CRYSTAL ORIENTATION", + URL = "http://link.aip.org/link/?JAP/64/2672/1", + doi = "10.1063/1.341608", +} + @Article{powell90, author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. J. Choyke and J. L. Bradshaw and L. Henderson and M. @@ -1623,7 +1876,7 @@ 6{H}-Si{C} substrates", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "14", pages = "1353--1355", @@ -1636,6 +1889,48 @@ notes = "cvd of 3c-sic on 6h-sic", } +@Article{kong88, + author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A. + Rozgonyi and K. L. More", + collaboration = "", + title = "An examination of double positioning boundaries and + interface misfit in beta-Si{C} films on alpha-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "Journal of Applied Physics", + volume = "63", + number = "8", + pages = "2645--2650", + keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING + FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN + FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION; + MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE + STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS", + URL = "http://link.aip.org/link/?JAP/63/2645/1", + doi = "10.1063/1.341004", +} + +@Article{powell91, + author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G. + Jenkins and L. G. Matus and J. W. Yang and P. Pirouz + and W. J. Choyke and L. Clemen and M. Yoganathan", + collaboration = "", + title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films + on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1991", + journal = "Applied Physics Letters", + volume = "59", + number = "3", + pages = "333--335", + keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE + PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL + MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE", + URL = "http://link.aip.org/link/?APL/59/333/1", + doi = "10.1063/1.105587", +} + @Article{yuan95, author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. Thokala and M. J. Loboda", @@ -1645,7 +1940,7 @@ silacyclobutane", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "2", pages = "1271--1273", @@ -1657,11 +1952,28 @@ notes = "3c-sic on 6h-sic, cvd, reduced temperature", } +@Article{kaneda87, + title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric + properties of its p-n junction", + journal = "Journal of Crystal Growth", + volume = "81", + number = "1-4", + pages = "536--542", + year = "1987", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(87)90449-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1", + author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara + and Takao Tanaka", + notes = "first time ssmbe of 3c-sic on 6h-sic", +} + @Article{fissel95, title = "Epitaxial growth of Si{C} thin films on Si-stabilized [alpha]-Si{C}(0001) at low temperatures by solid-source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "154", number = "1-2", pages = "72--80", @@ -1681,7 +1993,7 @@ 6{H}--Si{C} by solid-source molecular beam epitaxy", publisher = "AIP", year = "1995", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "66", number = "23", pages = "3182--3184", @@ -1692,6 +2004,43 @@ notes = "mbe 3c-sic on si and 6h-sic", } +@Article{fissel96, + author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and + Bernd Schr{\"{o}}ter and Wolfgang Richter", + collaboration = "", + title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by + migration enhanced epitaxy controlled to an atomic + level using surface superstructures", + publisher = "AIP", + year = "1996", + journal = "Applied Physics Letters", + volume = "68", + number = "9", + pages = "1204--1206", + keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; + NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION; + SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?APL/68/1204/1", + doi = "10.1063/1.115969", + notes = "ss mbe sic, superstructure, reconstruction", +} + +@Article{righi03, + title = "Ab initio Simulations of Homoepitaxial Si{C} Growth", + author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and + C. M. Bertoni and A. Catellani", + journal = "Phys. Rev. Lett.", + volume = "91", + number = "13", + pages = "136101", + numpages = "4", + year = "2003", + month = sep, + doi = "10.1103/PhysRevLett.91.136101", + publisher = "American Physical Society", + notes = "dft calculations mbe sic growth", +} + @Article{borders71, author = "J. A. Borders and S. T. Picraux and W. Beezhold", collaboration = "", @@ -1699,7 +2048,7 @@ {IMPLANTATION}", publisher = "AIP", year = "1971", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "18", number = "11", pages = "509--511", @@ -1717,7 +2066,7 @@ beam synthesis and incoherent lamp annealing", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "26", pages = "2242--2244", @@ -1734,7 +2083,7 @@ title = "Solubility of Carbon in Silicon and Germanium", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "30", number = "6", pages = "1551--1555", @@ -1751,7 +2100,7 @@ {B} in silicon", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "8", pages = "1150--1152", @@ -1766,8 +2115,7 @@ @Article{stolk95, title = "Implantation and transient boron diffusion: the role of the silicon self-interstitial", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "96", number = "1-2", pages = "187--195", @@ -1791,7 +2139,7 @@ diffusion in ion-implanted silicon", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "81", number = "9", pages = "6031--6050", @@ -1807,7 +2155,7 @@ of Si[sub 1 - y]{C}[sub y] random alloy layers", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "64", number = "3", pages = "324--326", @@ -1827,7 +2175,7 @@ - x - y]Ge[sub x]{C}[sub y]", publisher = "AIP", year = "1991", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "70", number = "4", pages = "2470--2472", @@ -1860,7 +2208,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1999", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "74", number = "6", pages = "836--838", @@ -1917,7 +2265,7 @@ month = may, doi = "10.1103/PhysRevLett.72.3578", publisher = "American Physical Society", - notes = "high c concentration in si, heterostructure, starined + notes = "high c concentration in si, heterostructure, strained si, dft", } @@ -1925,7 +2273,7 @@ title = "Electron Transport Model for Strained Silicon-Carbon Alloy", author = "Shu-Tong Chang and Chung-Yi Lin", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "44", number = "4B", pages = "2257--2262", @@ -1945,7 +2293,7 @@ Si(001)", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "82", number = "10", pages = "4977--4981", @@ -1999,7 +2347,7 @@ potential energy surfaces", publisher = "AIP", year = "2009", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "130", number = "11", eid = "114711", @@ -2020,7 +2368,7 @@ molecular dynamics method", publisher = "AIP", year = "1981", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "52", number = "12", pages = "7182--7190", @@ -2145,7 +2493,7 @@ simulation of infrequent events", publisher = "AIP", year = "1997", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "106", number = "11", pages = "4665--4677", @@ -2160,13 +2508,13 @@ } @Article{sorensen2000, - author = "Mads R. S\o rensen and Arthur F. Voter", + author = "Mads R. S{\o }rensen and Arthur F. Voter", collaboration = "", title = "Temperature-accelerated dynamics for simulation of infrequent events", publisher = "AIP", year = "2000", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "112", number = "21", pages = "9599--9606", @@ -2200,7 +2548,7 @@ simulation", publisher = "AIP", year = "1999", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "110", number = "19", pages = "9401--9410", @@ -2219,7 +2567,7 @@ to the production of amorphous silicon", publisher = "AIP", year = "2005", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "122", number = "15", eid = "154509", @@ -2240,7 +2588,7 @@ difficult?", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "62", number = "25", pages = "3336--3338", @@ -2254,7 +2602,7 @@ @Article{chaussende08, title = "Prospects for 3{C}-Si{C} bulk crystal growth", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "310", number = "5", pages = "976--981", @@ -2272,6 +2620,19 @@ metastable", } +@Article{chaussende07, + author = "D. Chaussende and P. J. Wellmann and M. Pons", + title = "Status of Si{C} bulk growth processes", + journal = "Journal of Physics D: Applied Physics", + volume = "40", + number = "20", + pages = "6150", + URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02", + year = "2007", + notes = "review of sic single crystal growth methods, process + modelling", +} + @Article{feynman39, title = "Forces in Molecules", author = "R. P. Feynman", @@ -2331,7 +2692,7 @@ 3{C}-Si{C}/Si (001) interface", publisher = "AIP", year = "2009", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "106", number = "7", eid = "073522", @@ -2355,7 +2716,7 @@ growth on Si(001) surface", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "7", pages = "4438--4445", @@ -2368,6 +2729,20 @@ model, interface", } +@Article{kitabatake97, + author = "Makoto Kitabatake", + title = "Simulations and Experiments of 3{C}-Si{C}/Si + Heteroepitaxial Growth", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "physica status solidi (b)", + volume = "202", + pages = "405--420", + URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + notes = "3c-sic heteroepitaxial growth on si off-axis model", +} + @Article{chirita97, title = "Strain relaxation and thermal stability of the 3{C}-Si{C}(001)/Si(001) interface: {A} molecular @@ -2457,6 +2832,24 @@ notes = "dislocations in diamond lattice", } +@Article{deguchi92, + title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon + Ion `Hot' Implantation", + author = "Masahiro Deguchi and Makoto Kitabatake and Takashi + Hirao and Naoki Arai and Tomio Izumi", + journal = "Japanese Journal of Applied Physics", + volume = "31", + number = "Part 1, No. 2A", + pages = "343--347", + numpages = "4", + year = "1992", + URL = "http://jjap.ipap.jp/link?JJAP/31/343/", + doi = "10.1143/JJAP.31.343", + publisher = "The Japan Society of Applied Physics", + notes = "c-c bonds in c implanted si, hot implantation + efficiency, c-c hard to break by thermal annealing", +} + @Article{eichhorn99, author = "F. Eichhorn and N. Schell and W. Matz and R. K{\"{o}}gler", @@ -2466,7 +2859,7 @@ synchrotron x-ray diffraction", publisher = "AIP", year = "1999", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "86", number = "8", pages = "4184--4187", @@ -2487,7 +2880,7 @@ carbon ion implantation", publisher = "AIP", year = "2002", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "91", number = "3", pages = "1287--1292", @@ -2497,7 +2890,7 @@ URL = "http://link.aip.org/link/?JAP/91/1287/1", doi = "10.1063/1.1428105", notes = "3c-sic alignement to si host in ibs depending on - temperature, might explain c int to c sub trafo", + temperature, might explain c into c sub trafo", } @Article{lucas10, @@ -2506,7 +2899,7 @@ silicon carbide: calculation of bulk properties, high-pressure phases, point and extended defects, and amorphous structures", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "22", number = "3", pages = "035802", @@ -2520,7 +2913,7 @@ Beauchamp", title = "Comparison between classical potentials and ab initio methods for silicon under large shear", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "15", number = "41", pages = "6943", @@ -2534,7 +2927,7 @@ title = "Verification of Tersoff's Potential for Static Structural Analysis of Solids of Group-{IV} Elements", author = "Koji Moriguchi and Akira Shintani", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "37", number = "Part 1, No. 2", pages = "414--422", @@ -2583,8 +2976,7 @@ @Article{nordlund97, title = "Repulsive interatomic potentials calculated using Hartree-Fock and density-functional theory methods", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "132", number = "1", pages = "45--54", @@ -2601,7 +2993,7 @@ title = "Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "6", number = "1", pages = "15--50", @@ -2664,7 +3056,7 @@ title = "Accurate and simple density functional for the electronic exchange energy: Generalized gradient approximation", - author = "John P. Perdew and Wang Yue", + author = "John P. Perdew and Yue Wang", journal = "Phys. Rev. B", volume = "33", number = "12", @@ -2730,7 +3122,7 @@ @Article{zhu98, title = "Ab initio pseudopotential calculations of dopant diffusion in Si", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "12", number = "4", pages = "309--318", @@ -2756,7 +3148,7 @@ 950 [degree]{C}", publisher = "AIP", year = "1995", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "66", number = "20", pages = "2646--2648", @@ -2778,7 +3170,7 @@ alloys", publisher = "AIP", year = "1998", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "84", number = "8", pages = "4631--4633", @@ -2795,7 +3187,7 @@ author = "R Jones and B J Coomer and P R Briddon", title = "Quantum mechanical modelling of defects in semiconductors", - journal = "Journal of Physics: Condensed Matter", + journal = "J. Phys.: Condens. Matter", volume = "16", number = "27", pages = "S2643", @@ -2814,7 +3206,7 @@ molecular-beam epitaxy", publisher = "AIP", year = "2002", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "91", number = "9", pages = "5716--5727", @@ -2877,7 +3269,7 @@ @Article{kaxiras96, title = "Review of atomistic simulations of surface diffusion and growth on semiconductors", - journal = "Computational Materials Science", + journal = "Comput. Mater. Sci.", volume = "6", number = "2", pages = "158--172", @@ -2933,7 +3325,7 @@ @Article{chen98, title = "Production and recovery of defects in Si{C} after irradiation and deformation", - journal = "Journal of Nuclear Materials", + journal = "J. Nucl. Mater.", volume = "258-263", number = "Part 2", pages = "1803--1808", @@ -2948,8 +3340,7 @@ @Article{weber01, title = "Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "175-177", number = "", pages = "26--30", @@ -2959,10 +3350,6 @@ doi = "DOI: 10.1016/S0168-583X(00)00542-5", URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577", author = "W. J. Weber and W. Jiang and S. Thevuthasan", - keywords = "Amorphization", - keywords = "Irradiation effects", - keywords = "Thermal recovery", - keywords = "Silicon carbide", } @Article{bockstedte03, @@ -2997,3 +3384,543 @@ doi = "10.1103/PhysRevB.68.155208", publisher = "American Physical Society", } + +@Article{losev27, + journal = "Telegrafiya i Telefoniya bez Provodov", + volume = "44", + pages = "485--494", + year = "1927", + author = "O. V. Lossev", +} + +@Article{losev28, + title = "Luminous carborundum detector and detection effect and + oscillations with crystals", + journal = "Philosophical Magazine Series 7", + volume = "6", + number = "39", + pages = "1024--1044", + year = "1928", + URL = "http://www.informaworld.com/10.1080/14786441108564683", + author = "O. V. Lossev", +} + +@Article{losev29, + journal = "Physik. Zeitschr.", + volume = "30", + pages = "920--923", + year = "1929", + author = "O. V. Lossev", +} + +@Article{losev31, + journal = "Physik. Zeitschr.", + volume = "32", + pages = "692--696", + year = "1931", + author = "O. V. Lossev", +} + +@Article{losev33, + journal = "Physik. Zeitschr.", + volume = "34", + pages = "397--403", + year = "1933", + author = "O. V. Lossev", +} + +@Article{round07, + title = "A note on carborundum", + journal = "Electrical World", + volume = "49", + pages = "308", + year = "1907", + author = "H. J. Round", +} + +@Article{vashishath08, + title = "Recent trends in silicon carbide device research", + journal = "Mj. Int. J. Sci. Tech.", + volume = "2", + number = "03", + pages = "444--470", + year = "2008", + author = "Munish Vashishath and Ashoke K. Chatterjee", + URL = "http://www.doaj.org/doaj?func=abstract&id=286746", + notes = "sic polytype electronic properties", +} + +@Article{nelson69, + author = "W. E. Nelson and F. A. Halden and A. Rosengreen", + collaboration = "", + title = "Growth and Properties of beta-Si{C} Single Crystals", + publisher = "AIP", + year = "1966", + journal = "Journal of Applied Physics", + volume = "37", + number = "1", + pages = "333--336", + URL = "http://link.aip.org/link/?JAP/37/333/1", + doi = "10.1063/1.1707837", + notes = "sic melt growth", +} + +@Article{arkel25, + author = "A. E. van Arkel and J. H. de Boer", + title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium- + und Thoriummetall", + publisher = "WILEY-VCH Verlag GmbH", + year = "1925", + journal = "Z. Anorg. Chem.", + volume = "148", + pages = "345--350", + URL = "http://dx.doi.org/10.1002/zaac.19251480133", + doi = "10.1002/zaac.19251480133", + notes = "van arkel apparatus", +} + +@Article{moers31, + author = "K. Moers", + year = "1931", + journal = "Z. Anorg. Chem.", + volume = "198", + pages = "293", + notes = "sic by van arkel apparatus, pyrolitical vapor growth + process", +} + +@Article{kendall53, + author = "J. T. Kendall", + title = "Electronic Conduction in Silicon Carbide", + publisher = "AIP", + year = "1953", + journal = "The Journal of Chemical Physics", + volume = "21", + number = "5", + pages = "821--827", + URL = "http://link.aip.org/link/?JCP/21/821/1", + notes = "sic by van arkel apparatus, pyrolitical vapor growth + process", +} + +@Article{lely55, + author = "J. A. Lely", + year = "1955", + journal = "Ber. Deut. Keram. Ges.", + volume = "32", + pages = "229", + notes = "lely sublimation growth process", +} + +@Article{knippenberg63, + author = "W. F. Knippenberg", + year = "1963", + journal = "Philips Res. Repts.", + volume = "18", + pages = "161", + notes = "acheson process", +} + +@Article{hoffmann82, + author = "L. Hoffmann and G. Ziegler and D. Theis and C. + Weyrich", + collaboration = "", + title = "Silicon carbide blue light emitting diodes with + improved external quantum efficiency", + publisher = "AIP", + year = "1982", + journal = "Journal of Applied Physics", + volume = "53", + number = "10", + pages = "6962--6967", + keywords = "light emitting diodes; silicon carbides; quantum + efficiency; visible radiation; experimental data; + epitaxy; fabrication; medium temperature; layers; + aluminium; nitrogen; substrates; pn junctions; + electroluminescence; spectra; current density; + optimization", + URL = "http://link.aip.org/link/?JAP/53/6962/1", + doi = "10.1063/1.330041", + notes = "blue led, sublimation process", +} + +@Article{neudeck95, + author = "Philip Neudeck", + affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark + Road 44135 Cleveland OH", + title = "Progress in silicon carbide semiconductor electronics + technology", + journal = "Journal of Electronic Materials", + publisher = "Springer Boston", + ISSN = "0361-5235", + keyword = "Chemistry and Materials Science", + pages = "283--288", + volume = "24", + issue = "4", + URL = "http://dx.doi.org/10.1007/BF02659688", + note = "10.1007/BF02659688", + year = "1995", + notes = "sic data, advantages of 3c sic", +} + +@Article{bhatnagar93, + author = "M. Bhatnagar and B. J. Baliga", + journal = "Electron Devices, IEEE Transactions on", + title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power + devices", + year = "1993", + month = mar, + volume = "40", + number = "3", + pages = "645--655", + keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky + rectifiers;Si;SiC;breakdown voltages;drift region + properties;output characteristics;power MOSFETs;power + semiconductor devices;switching characteristics;thermal + analysis;Schottky-barrier diodes;electric breakdown of + solids;insulated gate field effect transistors;power + transistors;semiconductor materials;silicon;silicon + compounds;solid-state rectifiers;thermal analysis;", + doi = "10.1109/16.199372", + ISSN = "0018-9383", + notes = "comparison 3c 6h sic and si devices", +} + +@Article{neudeck94, + author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. + A. Powell and C. S. Salupo and L. G. Matus", + journal = "Electron Devices, IEEE Transactions on", + title = "Electrical properties of epitaxial 3{C}- and + 6{H}-Si{C} p-n junction diodes produced side-by-side on + 6{H}-Si{C} substrates", + year = "1994", + month = may, + volume = "41", + number = "5", + pages = "826--835", + keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400 + C;6H-SiC layers;6H-SiC substrates;CVD + process;SiC;chemical vapor deposition;doping;electrical + properties;epitaxial layers;light + emission;low-tilt-angle 6H-SiC substrates;p-n junction + diodes;polytype;rectification characteristics;reverse + leakage current;reverse voltages;temperature;leakage + currents;power electronics;semiconductor + diodes;semiconductor epitaxial layers;semiconductor + growth;semiconductor materials;silicon + compounds;solid-state rectifiers;substrates;vapour + phase epitaxial growth;", + doi = "10.1109/16.285038", + ISSN = "0018-9383", + notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h + substrate", +} + +@Article{schulze98, + author = "N. Schulze and D. L. Barrett and G. Pensl", + collaboration = "", + title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C} + single crystals by physical vapor transport", + publisher = "AIP", + year = "1998", + journal = "Applied Physics Letters", + volume = "72", + number = "13", + pages = "1632--1634", + keywords = "silicon compounds; semiconductor materials; + semiconductor growth; crystal growth from vapour; + photoluminescence; Hall mobility", + URL = "http://link.aip.org/link/?APL/72/1632/1", + doi = "10.1063/1.121136", + notes = "micropipe free 6h-sic pvt growth", +} + +@Article{pirouz87, + author = "P. Pirouz and C. M. Chorey and J. A. Powell", + collaboration = "", + title = "Antiphase boundaries in epitaxially grown beta-Si{C}", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "50", + number = "4", + pages = "221--223", + keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON + MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL + VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION + ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE + BOUNDARIES", + URL = "http://link.aip.org/link/?APL/50/221/1", + doi = "10.1063/1.97667", + notes = "apb 3c-sic heteroepitaxy on si", +} + +@Article{shibahara86, + title = "Surface morphology of cubic Si{C}(100) grown on + Si(100) by chemical vapor deposition", + journal = "Journal of Crystal Growth", + volume = "78", + number = "3", + pages = "538--544", + year = "1986", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(86)90158-2", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9", + author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki + Matsunami", + notes = "defects in 3c-sis cvd on si, anti phase boundaries", +} + +@Article{desjardins96, + author = "P. Desjardins and J. E. Greene", + collaboration = "", + title = "Step-flow epitaxial growth on two-domain surfaces", + publisher = "AIP", + year = "1996", + journal = "Journal of Applied Physics", + volume = "79", + number = "3", + pages = "1423--1434", + keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY; + FILM GROWTH; SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?JAP/79/1423/1", + doi = "10.1063/1.360980", + notes = "apb model", +} + +@Article{henke95, + author = "S. Henke and B. Stritzker and B. Rauschenbach", + collaboration = "", + title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60] + carbonization of silicon", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "78", + number = "3", + pages = "2070--2073", + keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION; + FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL + STRUCTURE", + URL = "http://link.aip.org/link/?JAP/78/2070/1", + doi = "10.1063/1.360184", + notes = "ssmbe of sic on si, lower temperatures", +} + +@Article{fuyuki89, + title = "Atomic layer epitaxy of cubic Si{C} by gas source + {MBE} using surface superstructure", + journal = "Journal of Crystal Growth", + volume = "95", + number = "1-4", + pages = "461--463", + year = "1989", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(89)90442-9", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2", + author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo + Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami", + notes = "gas source mbe of 3c-sic on 6h-sic", +} + +@Article{yoshinobu92, + author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa + and Takashi Fuyuki and Hiroyuki Matsunami", + collaboration = "", + title = "Lattice-matched epitaxial growth of single crystalline + 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source + molecular beam epitaxy", + publisher = "AIP", + year = "1992", + journal = "Applied Physics Letters", + volume = "60", + number = "7", + pages = "824--826", + keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM + EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS; + INTERFACE STRUCTURE", + URL = "http://link.aip.org/link/?APL/60/824/1", + doi = "10.1063/1.107430", + notes = "gas source mbe of 3c-sic on 6h-sic", +} + +@Article{yoshinobu90, + title = "Atomic level control in gas source {MBE} growth of + cubic Si{C}", + journal = "Journal of Crystal Growth", + volume = "99", + number = "1-4", + pages = "520--524", + year = "1990", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(90)90575-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736", + author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu + Shiomi and Takashi Fuyuki and Hiroyuki Matsunami", + notes = "gas source mbe of 3c-sic on 3c-sic", +} + +@Article{fuyuki93, + title = "Atomic layer epitaxy controlled by surface + superstructures in Si{C}", + journal = "Thin Solid Films", + volume = "225", + number = "1-2", + pages = "225--229", + year = "1993", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(93)90159-M", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f", + author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki + Matsunami", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{hara93, + title = "Microscopic mechanisms of accurate layer-by-layer + growth of [beta]-Si{C}", + journal = "Thin Solid Films", + volume = "225", + number = "1-2", + pages = "240--243", + year = "1993", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(93)90162-I", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c", + author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai + and S. Misawa and E. Sakuma and S. Yoshida", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{tanaka94, + author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis", + collaboration = "", + title = "Effects of gas flow ratio on silicon carbide thin film + growth mode and polytype formation during gas-source + molecular beam epitaxy", + publisher = "AIP", + year = "1994", + journal = "Applied Physics Letters", + volume = "65", + number = "22", + pages = "2851--2853", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED; + TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; + NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS + FLOW; FLOW RATE", + URL = "http://link.aip.org/link/?APL/65/2851/1", + doi = "10.1063/1.112513", + notes = "gas source mbe of 6h-sic on 6h-sic", +} + +@Article{fuyuki97, + author = "T. Fuyuki and T. Hatayama and H. Matsunami", + title = "Heterointerface Control and Epitaxial Growth of + 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "physica status solidi (b)", + volume = "202", + pages = "359--378", + notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower + temperatures 750", +} + +@Article{takaoka98, + title = "Initial stage of Si{C} growth on Si(1 0 0) surface", + journal = "Journal of Crystal Growth", + volume = "183", + number = "1-2", + pages = "175--182", + year = "1998", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/S0022-0248(97)00391-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918", + author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki", + keywords = "Reflection high-energy electron diffraction (RHEED)", + keywords = "Scanning electron microscopy (SEM)", + keywords = "Silicon carbide", + keywords = "Silicon", + keywords = "Island growth", + notes = "lower temperature, 550-700", +} + +@Article{hatayama95, + title = "Low-temperature heteroepitaxial growth of cubic Si{C} + on Si using hydrocarbon radicals by gas source + molecular beam epitaxy", + journal = "Journal of Crystal Growth", + volume = "150", + number = "Part 2", + pages = "934--938", + year = "1995", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)80077-P", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e", + author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki + and Hiroyuki Matsunami", +} + +@Article{heine91, + author = "Volker Heine and Ching Cheng and Richard J. Needs", + title = "The Preference of Silicon Carbide for Growth in the + Metastable Cubic Form", + journal = "Journal of the American Ceramic Society", + volume = "74", + number = "10", + publisher = "Blackwell Publishing Ltd", + ISSN = "1551-2916", + URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x", + doi = "10.1111/j.1151-2916.1991.tb06811.x", + pages = "2630--2633", + keywords = "silicon carbide, crystal growth, crystal structure, + calculations, stability", + year = "1991", + notes = "3c-sic metastable, 3c-sic preferred growth, sic + polytype dft calculation refs", +} + +@Article{allendorf91, + title = "The adsorption of {H}-atoms on polycrystalline + [beta]-silicon carbide", + journal = "Surface Science", + volume = "258", + number = "1-3", + pages = "177--189", + year = "1991", + note = "", + ISSN = "0039-6028", + doi = "DOI: 10.1016/0039-6028(91)90912-C", + URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3", + author = "Mark D. Allendorf and Duane A. Outka", + notes = "h adsorption on 3c-sic", +} + +@Article{eaglesham93, + author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and + D. P. Adams and S. M. Yalisove", + collaboration = "", + title = "Effect of {H} on Si molecular-beam epitaxy", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "11", + pages = "6615--6618", + keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE + CONTAMINATION; SIMS; SEGREGATION; IMPURITIES; + DIFFUSION; ADSORPTION", + URL = "http://link.aip.org/link/?JAP/74/6615/1", + doi = "10.1063/1.355101", + notes = "h incorporation on si surface, lower surface + mobility", +}