X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=b5a1af25eaefaee72429c9154322dd759a99815a;hp=0f1d404ab79f8982ff65b6fd8304631f0267ffc2;hb=0de2bb0134b46f78b846ca37d9fda7eecc2a088c;hpb=67f277f9e3fe7dea7f9158e4d776749c1571c5c1 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 0f1d404..b5a1af2 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -133,6 +133,17 @@ } @Article{capano97, + author = "M. A. Capano and R. J. Trew", + title = "Silicon carbide electronic materials and devices", + journal = "MRS Bull.", + year = "1997", + volume = "22", + number = "3", + pages = "19--22", + publisher = "MATERIALS RESEARCH SOCIETY", +} + +@Article{capano97_old, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", journal = "MRS Bull.", @@ -1524,15 +1535,21 @@ } @Article{zirkelbach11, - title = "Combined ab initio and classical potential simulation - study on silicon carbide precipitation", - journal = "accepted for publication in Phys. Rev. B", - volume = "", - number = "", - pages = "", - year = "2011", + journal = "Phys. Rev. B", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126", + publisher = "American Physical Society", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. K. N. Lindner and W. G. Schmidt and E. Rauls", + title = "Combined \textit{ab initio} and classical potential + simulation study on silicon carbide precipitation in + silicon", + year = "2011", + pages = "064126", + numpages = "18", + volume = "84", + doi = "10.1103/PhysRevB.84.064126", + issue = "6", abstract = "Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and first-principles methods are presented. @@ -1588,7 +1605,6 @@ year = "1994", doi = "10.1557/PROC-354-171", URL = "http://dx.doi.org/10.1557/PROC-354-171", - eprint = "http://journals.cambridge.org/article_S1946427400420853", notes = "first time ibs at moderate temperatures", } @@ -1721,6 +1737,22 @@ notes = "c int diffusion barrier", } +@Article{haeberlen10, + title = "Structural characterization of cubic and hexagonal + Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si", + journal = "Journal of Crystal Growth", + volume = "312", + number = "6", + pages = "762--769", + year = "2010", + note = "", + ISSN = "0022-0248", + doi = "10.1016/j.jcrysgro.2009.12.048", + URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452", + author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J. + K. N. Lindner and B. Stritzker", +} + @Article{ito04, title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial @@ -2209,6 +2241,22 @@ notes = "cvd of 3c-sic on si, sic buffer layer", } +@Article{nagasawa06, + author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta", + title = "Reducing Planar Defects in 3{C}¿Si{C}", + journal = "Chemical Vapor Deposition", + volume = "12", + number = "8-9", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3862", + URL = "http://dx.doi.org/10.1002/cvde.200506466", + doi = "10.1002/cvde.200506466", + pages = "502--508", + keywords = "Defect structures, Epitaxy, Silicon carbide", + year = "2006", + notes = "cvd on si", +} + @Article{nishino87, author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono and Hiroyuki Matsunami", @@ -3433,7 +3481,7 @@ } @Article{parcas_md, - title = "{PARCAS} molecular dynamics code", + journal = "{PARCAS} molecular dynamics code", author = "K. Nordlund", year = "2008", } @@ -3995,7 +4043,6 @@ title = "The Fitting of Pseudopotentials to Experimental Data and Their Subsequent Application", editor = "Frederick Seitz Henry Ehrenreich and David Turnbull", - booktitle = "", publisher = "Academic Press", year = "1970", volume = "24", @@ -4022,6 +4069,20 @@ notes = "norm-conserving pseudopotentials", } +@Article{kleinman82, + journal = "Phys. Rev. Lett.", + month = may, + doi = "10.1103/PhysRevLett.48.1425", + issue = "20", + author = "Leonard Kleinman and D. M. Bylander", + title = "Efficacious Form for Model Pseudopotentials", + year = "1982", + URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425", + publisher = "American Physical Society", + pages = "1425--1428", + volume = "48", +} + @Article{troullier91, title = "Efficient pseudopotentials for plane-wave calculations", @@ -4256,6 +4317,22 @@ si", } +@Article{jones89, + doi = "10.1103/RevModPhys.61.689", + month = jul, + issue = "3", + author = "R. O. Jones and O. Gunnarsson", + year = "1989", + URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689", + publisher = "American Physical Society", + title = "The density functional formalism, its applications and + prospects", + pages = "689--746", + journal = "Rev. Mod. Phys.", + volume = "61", + notes = "dft intro", +} + @Article{park02, author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. T Soares and Y.-W. Kim and H. Kim and P. Desjardins and @@ -4610,7 +4687,7 @@ Road 44135 Cleveland OH", title = "Progress in silicon carbide semiconductor electronics technology", - journal = "Journal of Electronic Materials", + journal = "J. Electron. Mater.", publisher = "Springer Boston", ISSN = "0361-5235", keyword = "Chemistry and Materials Science", @@ -4623,9 +4700,60 @@ notes = "sic data, advantages of 3c sic", } +@InProceedings{pribble02, + author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and + R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring + and J. J. Sumakeris and A. W. Saxler and J. W. + Milligan", + booktitle = "2002 IEEE MTT-S International Microwave Symposium + Digest", + title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in + power amplifier design", + year = "2002", + month = "", + volume = "", + number = "", + pages = "1819--1822", + doi = "10.1109/MWSYM.2002.1012216", + ISSN = "", + notes = "hdtv", +} + +@InProceedings{temcamani01, + author = "F. Temcamani and P. Pouvil and O. Noblanc and C. + Brylinski and P. Bannelier and B. Darges and J. P. + Prigent", + booktitle = "2001 IEEE MTT-S International Microwave Symposium + Digest", + title = "Silicon carbide {MESFET}s performances and application + in broadcast power amplifiers", + year = "2001", + month = "", + volume = "", + number = "", + pages = "641--644", + doi = "10.1109/MWSYM.2001.966976", + ISSN = "", + notes = "hdtv", +} + +@Article{pensl00, + author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu + and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu + Kimoto and Hiroyuki Matsunami", + title = "Traps at the Si{C}/Si{O2}-Interface", + journal = "MRS Proc.", + volume = "640", + number = "", + pages = "", + year = "2000", + doi = "10.1557/PROC-640-H3.2", + URL = "http://dx.doi.org/10.1557/PROC-640-H3.2", +} + @Article{bhatnagar93, author = "M. Bhatnagar and B. J. Baliga", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power devices", year = "1993", @@ -4646,10 +4774,84 @@ notes = "comparison 3c 6h sic and si devices", } +@Article{ryu01, + author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W. + Palmour", + journal = "IEEE Electron Device Lett.", + title = "1800 {V} {NPN} bipolar junction transistors in + 4{H}-Si{C}", + year = "2001", + month = mar, + volume = "22", + number = "3", + pages = "124--126", + keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction + transistor;SiC;blocking voltage;current gain;deep level + acceptor;minority carrier lifetime;on-resistance;power + switching device;temperature coefficient;carrier + lifetime;deep levels;minority carriers;power bipolar + transistors;silicon compounds;wide band gap + semiconductors;", + doi = "10.1109/55.910617", + ISSN = "0741-3106", +} + +@Article{baliga96, + author = "B. J. Baliga", + journal = "IEEE Trans. Electron Devices", + title = "Trends in power semiconductor devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1717--1731", + keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated + devices;MOS-gated thyristors;MPS rectifier;PIN + rectifier;Schottky rectifier;Si;SiC;SiC based + switches;TMBS rectifier;UMOS technology;VMOS + technology;bipolar power transistor;high voltage power + rectifiers;low voltage power rectifiers;power + MOSFET;power losses;power semiconductor devices;power + switch technology;review;semiconductor device + technology;MOS-controlled thyristors;bipolar transistor + switches;field effect transistor switches;gallium + arsenide;insulated gate bipolar transistors;p-i-n + diodes;power bipolar transistors;power field effect + transistors;power semiconductor devices;power + semiconductor diodes;power semiconductor + switches;reviews;silicon;silicon compounds;solid-state + rectifiers;thyristors;", + doi = "10.1109/16.536818", + ISSN = "0018-9383", +} + +@Article{bhatnagar92, + author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga", + journal = "IEEE Electron Device Lett.", + title = "Silicon-carbide high-voltage (400 {V}) Schottky + barrier diodes", + year = "1992", + month = oct, + volume = "13", + number = "10", + pages = "501--503", + keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier + diodes;breakdown + voltages;characteristics;fabrication;forward I-V + characteristics;forward voltage drop;on-state current + density;rectifiers;reverse I-V characteristics;reverse + recovery characteristics;sharp breakdown;temperature + range;Schottky-barrier diodes;platinum;power + electronics;semiconductor materials;silicon + compounds;solid-state rectifiers;", + doi = "10.1109/55.192814", + ISSN = "0741-3106", +} + @Article{neudeck94, author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. A. Powell and C. S. Salupo and L. G. Matus", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Electrical properties of epitaxial 3{C}- and 6{H}-Si{C} p-n junction diodes produced side-by-side on 6{H}-Si{C} substrates", @@ -4676,6 +4878,98 @@ substrate", } +@Article{weitzel96, + author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.} + and K. Moore and K. K. Nordquist and S. Allen and C. + Thero and M. Bhatnagar", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide high-power devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1732--1741", + keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky + barrier diodes;SiC;SiC devices;UMOSFET;current + density;high electric breakdown field;high saturated + electron drift velocity;high thermal + conductivity;high-power devices;packaged SIT;submicron + gate length MESFET;Schottky diodes;current + density;electric breakdown;power MESFET;power + MOSFET;power semiconductor devices;power semiconductor + diodes;reviews;silicon compounds;static induction + transistors;wide band gap semiconductors;", + doi = "10.1109/16.536819", + ISSN = "0018-9383", + notes = "high power devices", +} + +@Article{zhu08, + author = "Lin Zhu and T. P. Chow", + journal = "IEEE Trans. Electron Devices", + title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers", + year = "2008", + month = aug, + volume = "55", + number = "8", + pages = "1871--1874", + keywords = "H-SiC;OFF-state characteristics;ON-state + characteristics;blocking capability;high-voltage + Schottky rectifier;junction barrier Schottky + rectifier;lateral channel JBS rectifier;leakage + current;pinlike reverse characteristics;Schottky + barriers;Schottky diodes;leakage currents;rectifying + circuits;", + doi = "10.1109/TED.2008.926642", + ISSN = "0018-9383", +} + +@Article{brown93, + author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W. + Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond + and G. Gati and J. M. Pimbley and W. E. Schneider", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide {UV} photodiodes", + year = "1993", + month = feb, + volume = "40", + number = "2", + pages = "325--333", + keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV + responsivity characteristics;low dark current;low light + level UV detection;quantum + efficiency;reproducibility;reverse current + leakage;short circuit output current;leakage + currents;photodiodes;semiconductor + materials;short-circuit currents;silicon + compounds;ultraviolet detectors;", + doi = "10.1109/16.182509", + ISSN = "0018-9383", + notes = "sic photo diodes, uv detector", +} + +@Article{yan04, + author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao + and D. Franz and J. H. Zhao and M. Weiner", + journal = "IEEE J. Quantum Electron.", + title = "4{H}-Si{C} {UV} photo detectors with large area and + very high specific detectivity", + year = "2004", + month = sep, + volume = "40", + number = "9", + pages = "1315--1320", + keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV + photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes; + SiC-Pt; leakage current; photoresponse spectra; quantum + efficiency; specific detectivity; Schottky diodes; + photodetectors; platinum; silicon compounds; wide band + gap semiconductors;", + doi = "10.1109/JQE.2004.833196", + ISSN = "0018-9197", + notes = "uv detector", +} + @Article{schulze98, author = "N. Schulze and D. L. Barrett and G. Pensl", collaboration = "", @@ -4695,6 +4989,56 @@ notes = "micropipe free 6h-sic pvt growth", } +@Article{frank51, + author = "F. C. Frank", + title = "Capillary equilibria of dislocated crystals", + journal = "Acta Crystallogr.", + year = "1951", + volume = "4", + number = "6", + pages = "497--501", + month = nov, + doi = "10.1107/S0365110X51001690", + URL = "http://dx.doi.org/10.1107/S0365110X51001690", + notes = "micropipe", +} + +@Article{heindl97, + author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G. + Pensl", + title = "Micropipes: Hollow Tubes in Silicon Carbide", + journal = "phys. status solidi (a)", + volume = "162", + number = "1", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-396X", + URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7", + doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7", + pages = "251--262", + year = "1997", + notes = "micropipe", +} + +@Article{neudeck94_2, + author = "P. G. Neudeck and J. A. Powell", + journal = "IEEE Electron Device Lett.", + title = "Performance limiting micropipe defects in silicon + carbide wafers", + year = "1994", + month = feb, + volume = "15", + number = "2", + pages = "63--65", + keywords = "SiC;defect density;device ratings;epitaxially-grown pn + junction devices;micropipe defects;power devices;power + semiconductors;pre-avalanche reverse-bias point + failures;p-n homojunctions;power + electronics;semiconductor materials;silicon + compounds;", + doi = "10.1109/55.285372", + ISSN = "0741-3106", +} + @Article{pirouz87, author = "P. Pirouz and C. M. Chorey and J. A. Powell", collaboration = "", @@ -5128,3 +5472,94 @@ year = "1994", publisher = "Suhrkamp", } + +@Misc{attenberger03, + author = "Wilfried Attenberger and Jörg Lindner and Bernd + Stritzker", + title = "A {method} {for} {forming} {a} {layered} + {semiconductor} {structure} {and} {corresponding} + {structure}", + year = "2003", + month = apr, + day = "24", + note = "WO 2003/034484 A3R4", + version = "A3R4", + howpublished = "Patent Application", + nationality = "WO", + filing_num = "EP0211423", + yearfiled = "2002", + monthfiled = "10", + dayfiled = "11", + pat_refs = "", + ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L + 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L + 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B", + us_class = "", + abstract = "The following invention provides a method for forming + a layered semiconductor structure having a layer (5) of + a first semiconductor material on a substrate (1; 1') + of at least one second semiconductor material, + comprising the steps of: providing said substrate (1; + 1'); burying said layer (5) of said first semiconductor + material in said substrate (1; 1'), said buried layer + (5) having an upper surface (105) and a lower surface + (105) and dividing said substrate (1; 1') into an upper + part (1a) and a lower part (1b; 1b', 1c); creating a + buried damage layer (10; 10'; 10'', 100'') which at + least partly adjoins and/or at least partly includes + said upper surface (105) of said buried layer (5); and + removing said upper part (1a) of said substrate (1; 1') + and said buried damage layer (10; 10'; 10'', 100'') for + exposing said buried layer (5). The invention also + provides a corresponding layered semiconductor + structure.", +} + +@Article{zunger01, + author = "Alex Zunger", + title = "Pseudopotential Theory of Semiconductor Quantum Dots", + journal = "physica status solidi (b)", + volume = "224", + number = "3", + publisher = "WILEY-VCH Verlag Berlin GmbH", + ISSN = "1521-3951", + URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + pages = "727--734", + keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11, + S8.12", + year = "2001", + notes = "configuration-interaction method, ci", +} + +@Article{robertson90, + author = "I. J. Robertson and M. C. Payne", + title = "k-point sampling and the k.p method in pseudopotential + total energy calculations", + journal = "Journal of Physics: Condensed Matter", + volume = "2", + number = "49", + pages = "9837", + URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010", + year = "1990", + notes = "kp method", +} + +@Article{lange11, + volume = "84", + journal = "Phys. Rev. B", + author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg + Neugebauer", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101", + doi = "10.1103/PhysRevB.84.085101", + year = "2011", + title = "Construction and performance of fully numerical + optimum atomic basis sets", + issue = "8", + publisher = "American Physical Society", + numpages = "11", + pages = "085101", + notes = "quamol, basis set, for planc", +} +