X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=b5a1af25eaefaee72429c9154322dd759a99815a;hp=361373e2cb4cd719b94305d08516c7c165a19aa2;hb=0de2bb0134b46f78b846ca37d9fda7eecc2a088c;hpb=1c17548cf4fd6aa3323bc563b90207fe7f615a0f diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 361373e..b5a1af2 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -4069,6 +4069,20 @@ notes = "norm-conserving pseudopotentials", } +@Article{kleinman82, + journal = "Phys. Rev. Lett.", + month = may, + doi = "10.1103/PhysRevLett.48.1425", + issue = "20", + author = "Leonard Kleinman and D. M. Bylander", + title = "Efficacious Form for Model Pseudopotentials", + year = "1982", + URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425", + publisher = "American Physical Society", + pages = "1425--1428", + volume = "48", +} + @Article{troullier91, title = "Efficient pseudopotentials for plane-wave calculations", @@ -4303,6 +4317,22 @@ si", } +@Article{jones89, + doi = "10.1103/RevModPhys.61.689", + month = jul, + issue = "3", + author = "R. O. Jones and O. Gunnarsson", + year = "1989", + URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689", + publisher = "American Physical Society", + title = "The density functional formalism, its applications and + prospects", + pages = "689--746", + journal = "Rev. Mod. Phys.", + volume = "61", + notes = "dft intro", +} + @Article{park02, author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. T Soares and Y.-W. Kim and H. Kim and P. Desjardins and @@ -4657,7 +4687,7 @@ Road 44135 Cleveland OH", title = "Progress in silicon carbide semiconductor electronics technology", - journal = "Journal of Electronic Materials", + journal = "J. Electron. Mater.", publisher = "Springer Boston", ISSN = "0361-5235", keyword = "Chemistry and Materials Science", @@ -4675,8 +4705,8 @@ R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring and J. J. Sumakeris and A. W. Saxler and J. W. Milligan", - booktitle = "Microwave Symposium Digest, 2002 IEEE MTT-S - International", + booktitle = "2002 IEEE MTT-S International Microwave Symposium + Digest", title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in power amplifier design", year = "2002", @@ -4693,8 +4723,8 @@ author = "F. Temcamani and P. Pouvil and O. Noblanc and C. Brylinski and P. Bannelier and B. Darges and J. P. Prigent", - booktitle = "Microwave Symposium Digest, 2001 IEEE MTT-S - International", + booktitle = "2001 IEEE MTT-S International Microwave Symposium + Digest", title = "Silicon carbide {MESFET}s performances and application in broadcast power amplifiers", year = "2001", @@ -4712,7 +4742,7 @@ and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu Kimoto and Hiroyuki Matsunami", title = "Traps at the Si{C}/Si{O2}-Interface", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "640", number = "", pages = "", @@ -4723,7 +4753,7 @@ @Article{bhatnagar93, author = "M. Bhatnagar and B. J. Baliga", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power devices", year = "1993", @@ -4744,10 +4774,84 @@ notes = "comparison 3c 6h sic and si devices", } +@Article{ryu01, + author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W. + Palmour", + journal = "IEEE Electron Device Lett.", + title = "1800 {V} {NPN} bipolar junction transistors in + 4{H}-Si{C}", + year = "2001", + month = mar, + volume = "22", + number = "3", + pages = "124--126", + keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction + transistor;SiC;blocking voltage;current gain;deep level + acceptor;minority carrier lifetime;on-resistance;power + switching device;temperature coefficient;carrier + lifetime;deep levels;minority carriers;power bipolar + transistors;silicon compounds;wide band gap + semiconductors;", + doi = "10.1109/55.910617", + ISSN = "0741-3106", +} + +@Article{baliga96, + author = "B. J. Baliga", + journal = "IEEE Trans. Electron Devices", + title = "Trends in power semiconductor devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1717--1731", + keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated + devices;MOS-gated thyristors;MPS rectifier;PIN + rectifier;Schottky rectifier;Si;SiC;SiC based + switches;TMBS rectifier;UMOS technology;VMOS + technology;bipolar power transistor;high voltage power + rectifiers;low voltage power rectifiers;power + MOSFET;power losses;power semiconductor devices;power + switch technology;review;semiconductor device + technology;MOS-controlled thyristors;bipolar transistor + switches;field effect transistor switches;gallium + arsenide;insulated gate bipolar transistors;p-i-n + diodes;power bipolar transistors;power field effect + transistors;power semiconductor devices;power + semiconductor diodes;power semiconductor + switches;reviews;silicon;silicon compounds;solid-state + rectifiers;thyristors;", + doi = "10.1109/16.536818", + ISSN = "0018-9383", +} + +@Article{bhatnagar92, + author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga", + journal = "IEEE Electron Device Lett.", + title = "Silicon-carbide high-voltage (400 {V}) Schottky + barrier diodes", + year = "1992", + month = oct, + volume = "13", + number = "10", + pages = "501--503", + keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier + diodes;breakdown + voltages;characteristics;fabrication;forward I-V + characteristics;forward voltage drop;on-state current + density;rectifiers;reverse I-V characteristics;reverse + recovery characteristics;sharp breakdown;temperature + range;Schottky-barrier diodes;platinum;power + electronics;semiconductor materials;silicon + compounds;solid-state rectifiers;", + doi = "10.1109/55.192814", + ISSN = "0741-3106", +} + @Article{neudeck94, author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. A. Powell and C. S. Salupo and L. G. Matus", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Electrical properties of epitaxial 3{C}- and 6{H}-Si{C} p-n junction diodes produced side-by-side on 6{H}-Si{C} substrates", @@ -4774,6 +4878,98 @@ substrate", } +@Article{weitzel96, + author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.} + and K. Moore and K. K. Nordquist and S. Allen and C. + Thero and M. Bhatnagar", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide high-power devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1732--1741", + keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky + barrier diodes;SiC;SiC devices;UMOSFET;current + density;high electric breakdown field;high saturated + electron drift velocity;high thermal + conductivity;high-power devices;packaged SIT;submicron + gate length MESFET;Schottky diodes;current + density;electric breakdown;power MESFET;power + MOSFET;power semiconductor devices;power semiconductor + diodes;reviews;silicon compounds;static induction + transistors;wide band gap semiconductors;", + doi = "10.1109/16.536819", + ISSN = "0018-9383", + notes = "high power devices", +} + +@Article{zhu08, + author = "Lin Zhu and T. P. Chow", + journal = "IEEE Trans. Electron Devices", + title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers", + year = "2008", + month = aug, + volume = "55", + number = "8", + pages = "1871--1874", + keywords = "H-SiC;OFF-state characteristics;ON-state + characteristics;blocking capability;high-voltage + Schottky rectifier;junction barrier Schottky + rectifier;lateral channel JBS rectifier;leakage + current;pinlike reverse characteristics;Schottky + barriers;Schottky diodes;leakage currents;rectifying + circuits;", + doi = "10.1109/TED.2008.926642", + ISSN = "0018-9383", +} + +@Article{brown93, + author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W. + Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond + and G. Gati and J. M. Pimbley and W. E. Schneider", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide {UV} photodiodes", + year = "1993", + month = feb, + volume = "40", + number = "2", + pages = "325--333", + keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV + responsivity characteristics;low dark current;low light + level UV detection;quantum + efficiency;reproducibility;reverse current + leakage;short circuit output current;leakage + currents;photodiodes;semiconductor + materials;short-circuit currents;silicon + compounds;ultraviolet detectors;", + doi = "10.1109/16.182509", + ISSN = "0018-9383", + notes = "sic photo diodes, uv detector", +} + +@Article{yan04, + author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao + and D. Franz and J. H. Zhao and M. Weiner", + journal = "IEEE J. Quantum Electron.", + title = "4{H}-Si{C} {UV} photo detectors with large area and + very high specific detectivity", + year = "2004", + month = sep, + volume = "40", + number = "9", + pages = "1315--1320", + keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV + photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes; + SiC-Pt; leakage current; photoresponse spectra; quantum + efficiency; specific detectivity; Schottky diodes; + photodetectors; platinum; silicon compounds; wide band + gap semiconductors;", + doi = "10.1109/JQE.2004.833196", + ISSN = "0018-9197", + notes = "uv detector", +} + @Article{schulze98, author = "N. Schulze and D. L. Barrett and G. Pensl", collaboration = "", @@ -4793,6 +4989,56 @@ notes = "micropipe free 6h-sic pvt growth", } +@Article{frank51, + author = "F. C. Frank", + title = "Capillary equilibria of dislocated crystals", + journal = "Acta Crystallogr.", + year = "1951", + volume = "4", + number = "6", + pages = "497--501", + month = nov, + doi = "10.1107/S0365110X51001690", + URL = "http://dx.doi.org/10.1107/S0365110X51001690", + notes = "micropipe", +} + +@Article{heindl97, + author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G. + Pensl", + title = "Micropipes: Hollow Tubes in Silicon Carbide", + journal = "phys. status solidi (a)", + volume = "162", + number = "1", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-396X", + URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7", + doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7", + pages = "251--262", + year = "1997", + notes = "micropipe", +} + +@Article{neudeck94_2, + author = "P. G. Neudeck and J. A. Powell", + journal = "IEEE Electron Device Lett.", + title = "Performance limiting micropipe defects in silicon + carbide wafers", + year = "1994", + month = feb, + volume = "15", + number = "2", + pages = "63--65", + keywords = "SiC;defect density;device ratings;epitaxially-grown pn + junction devices;micropipe defects;power devices;power + semiconductors;pre-avalanche reverse-bias point + failures;p-n homojunctions;power + electronics;semiconductor materials;silicon + compounds;", + doi = "10.1109/55.285372", + ISSN = "0741-3106", +} + @Article{pirouz87, author = "P. Pirouz and C. M. Chorey and J. A. Powell", collaboration = "", @@ -5268,3 +5514,52 @@ provides a corresponding layered semiconductor structure.", } + +@Article{zunger01, + author = "Alex Zunger", + title = "Pseudopotential Theory of Semiconductor Quantum Dots", + journal = "physica status solidi (b)", + volume = "224", + number = "3", + publisher = "WILEY-VCH Verlag Berlin GmbH", + ISSN = "1521-3951", + URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + pages = "727--734", + keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11, + S8.12", + year = "2001", + notes = "configuration-interaction method, ci", +} + +@Article{robertson90, + author = "I. J. Robertson and M. C. Payne", + title = "k-point sampling and the k.p method in pseudopotential + total energy calculations", + journal = "Journal of Physics: Condensed Matter", + volume = "2", + number = "49", + pages = "9837", + URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010", + year = "1990", + notes = "kp method", +} + +@Article{lange11, + volume = "84", + journal = "Phys. Rev. B", + author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg + Neugebauer", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101", + doi = "10.1103/PhysRevB.84.085101", + year = "2011", + title = "Construction and performance of fully numerical + optimum atomic basis sets", + issue = "8", + publisher = "American Physical Society", + numpages = "11", + pages = "085101", + notes = "quamol, basis set, for planc", +} +