X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=b5a1af25eaefaee72429c9154322dd759a99815a;hp=b9c97424db1492b5449584a22fc77938ee4ab7ff;hb=0de2bb0134b46f78b846ca37d9fda7eecc2a088c;hpb=bfb28f839680198a55dc103169b09faa107bff88 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index b9c9742..b5a1af2 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -5,7 +5,7 @@ @Article{schroedinger26, author = "E. Schrödinger", title = "Quantisierung als Eigenwertproblem", - journal = "Annalen der Physik", + journal = "Ann. Phys. (Leipzig)", volume = "384", number = "4", publisher = "WILEY-VCH Verlag", @@ -21,7 +21,7 @@ affiliation = "Institut d. Universität f. theor. Physik Leipzig", title = "Über die Quantenmechanik der Elektronen in Kristallgittern", - journal = "Zeitschrift für Physik A Hadrons and Nuclei", + journal = "Z. Phys.", publisher = "Springer Berlin / Heidelberg", ISSN = "0939-7922", keyword = "Physics and Astronomy", @@ -58,7 +58,7 @@ @Article{erhart04, title = "The role of thermostats in modeling vapor phase condensation of silicon nanoparticles", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "226", number = "1-3", pages = "12--18", @@ -88,7 +88,7 @@ @Article{newman65, title = "Vibrational absorption of carbon in silicon", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "26", number = "2", pages = "373--379", @@ -119,7 +119,7 @@ @Article{bean71, title = "The solubility of carbon in pulled silicon crystals", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "32", number = "6", pages = "1211--1219", @@ -133,6 +133,17 @@ } @Article{capano97, + author = "M. A. Capano and R. J. Trew", + title = "Silicon carbide electronic materials and devices", + journal = "MRS Bull.", + year = "1997", + volume = "22", + number = "3", + pages = "19--22", + publisher = "MATERIALS RESEARCH SOCIETY", +} + +@Article{capano97_old, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", journal = "MRS Bull.", @@ -159,7 +170,7 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Appl. Phys. A: Mater. Sci. Process.", + journal = "Appl. Phys. A", volume = "76", pages = "827--835", month = mar, @@ -173,7 +184,7 @@ @Article{skorupa96, title = "Carbon-mediated effects in silicon and in silicon-related materials", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "44", number = "2", pages = "101--143", @@ -294,7 +305,7 @@ author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon Diablo", - journal = "Comptes rendus de l'Académie des Sciences", + journal = "C. R. Acad. Sci.", volume = "139", pages = "773--786", year = "1904", @@ -312,7 +323,7 @@ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and Calvin H. Carter Jr. and D. Asbury", title = "Si{C} Seeded Boule Growth", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "3--8", year = "1998", @@ -1003,7 +1014,7 @@ @Article{bean70, title = "Low temperature electron irradiation of silicon containing carbon", - journal = "Solid State Communications", + journal = "Solid State Commun.", volume = "8", number = "3", pages = "175--177", @@ -1133,7 +1144,7 @@ @Article{foell77, title = "The formation of swirl defects in silicon by agglomeration of self-interstitials", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "40", number = "1", pages = "90--108", @@ -1150,7 +1161,7 @@ @Article{foell81, title = "Microdefects in silicon and their relation to point defects", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "52", number = "Part 2", pages = "907--916", @@ -1187,8 +1198,8 @@ @InProceedings{werner96, author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. Eichler", - booktitle = "Ion Implantation Technology. Proceedings of the 11th - International Conference on", + booktitle = "Proceedings of the 11th International Conference on + Ion Implantation Technology.", title = "{TEM} investigation of {C}-Si defects in carbon implanted silicon", year = "1996", @@ -1371,6 +1382,24 @@ doi = "doi:10.1016/j.nimb.2006.12.118", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Periodically arranged, selforganised, nanometric, + amorphous precipitates have been observed after + high-fluence ion implantations into solids for a number + of ion/target combinations at certain implantation + conditions. A model describing the ordering process + based on compressive stress exerted by the amorphous + inclusions as a result of the density change upon + amorphisation is introduced. A Monte Carlo simulation + code, which focuses on high-fluence carbon + implantations into silicon, is able to reproduce + experimentally observed nanolamella distributions as + well as the formation of continuous amorphous layers. + By means of simulation, the selforganisation process + becomes traceable and detailed information about the + compositional and structural state during the ordering + process is obtained. Based on simulation results, a + recipe is proposed for producing broad distributions of + ordered lamellar structures.", } @Article{zirkelbach2006, @@ -1389,6 +1418,17 @@ doi = "doi:10.1016/j.nimb.2005.08.162", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "High-dose ion implantation of materials that undergo + drastic density change upon amorphization at certain + implantation conditions results in periodically + arranged, self-organized, nanometric configurations of + the amorphous phase. A simple model explaining the + phenomenon is introduced and implemented in a + Monte-Carlo simulation code. Through simulation + conditions for observing lamellar precipitates are + specified and additional information about the + compositional and structural state during the ordering + process is gained.", } @Article{zirkelbach2005, @@ -1407,6 +1447,21 @@ doi = "doi:10.1016/j.commatsci.2004.12.016", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Ion irradiation of materials, which undergo a drastic + density change upon amorphization have been shown to + exhibit selforganized, nanometric structures of the + amorphous phase in the crystalline host lattice. In + order to better understand the process a + Monte-Carlo-simulation code based on a simple model is + developed. In the present work we focus on high-dose + carbon implantations into silicon. The simulation is + able to reproduce results gained by cross-sectional TEM + measurements of high-dose carbon implanted silicon. + Necessary conditions can be specified for the + self-organization process and information is gained + about the compositional and structural state during the + ordering process which is difficult to be obtained by + experiment.", } @Article{zirkelbach09, @@ -1431,6 +1486,22 @@ keywords = "Nucleation", keywords = "Defect formation", keywords = "Molecular dynamics simulations", + abstract = "The precipitation process of silicon carbide in + heavily carbon doped silicon is not yet fully + understood. High resolution transmission electron + microscopy observations suggest that in a first step + carbon atoms form C-Si dumbbells on regular Si lattice + sites which agglomerate into large clusters. In a + second step, when the cluster size reaches a radius of + a few nm, the high interfacial energy due to the SiC/Si + lattice misfit of almost 20\% is overcome and the + precipitation occurs. By simulation, details of the + precipitation process can be obtained on the atomic + level. A recently proposed parametrization of a + Tersoff-like bond order potential is used to model the + system appropriately. Preliminary results gained by + molecular dynamics simulations using this potential are + presented.", } @Article{zirkelbach10, @@ -1447,29 +1518,79 @@ month = sep, doi = "10.1103/PhysRevB.82.094110", publisher = "American Physical Society", -} - -@Article{zirkelbach11a, - title = "First principles study of defects in carbon implanted - silicon", - journal = "to be published", - volume = "", - number = "", - pages = "", - year = "2011", - author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner - and W. G. Schmidt and E. Rauls", -} - -@Article{zirkelbach11b, - title = "...", - journal = "to be published", - volume = "", - number = "", - pages = "", - year = "2011", + abstract = "A comparative theoretical investigation of carbon + interstitials in silicon is presented. Calculations + using classical potentials are compared to + first-principles density-functional theory calculations + of the geometries, formation, and activation energies + of the carbon dumbbell interstitial, showing the + importance of a quantum-mechanical description of this + system. In contrast to previous studies, the present + first-principles calculations of the interstitial + carbon migration path yield an activation energy that + excellently matches the experiment. The bond-centered + interstitial configuration shows a net magnetization of + two electrons, illustrating the need for spin-polarized + calculations.", +} + +@Article{zirkelbach11, + journal = "Phys. Rev. B", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126", + publisher = "American Physical Society", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. K. N. Lindner and W. G. Schmidt and E. Rauls", + title = "Combined \textit{ab initio} and classical potential + simulation study on silicon carbide precipitation in + silicon", + year = "2011", + pages = "064126", + numpages = "18", + volume = "84", + doi = "10.1103/PhysRevB.84.064126", + issue = "6", + abstract = "Atomistic simulations on the silicon carbide + precipitation in bulk silicon employing both, classical + potential and first-principles methods are presented. + The calculations aim at a comprehensive, microscopic + understanding of the precipitation mechanism in the + context of controversial discussions in the literature. + For the quantum-mechanical treatment, basic processes + assumed in the precipitation process are calculated in + feasible systems of small size. The migration mechanism + of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1 + 1 0> self-interstitial in otherwise defect-free silicon + are investigated using density functional theory + calculations. The influence of a nearby vacancy, + another carbon interstitial and a substitutional defect + as well as a silicon self-interstitial has been + investigated systematically. Interactions of various + combinations of defects have been characterized + including a couple of selected migration pathways + within these configurations. Almost all of the + investigated pairs of defects tend to agglomerate + allowing for a reduction in strain. The formation of + structures involving strong carbon-carbon bonds turns + out to be very unlikely. In contrast, substitutional + carbon occurs in all probability. A long range capture + radius has been observed for pairs of interstitial + carbon as well as interstitial carbon and vacancies. A + rather small capture radius is predicted for + substitutional carbon and silicon self-interstitials. + Initial assumptions regarding the precipitation + mechanism of silicon carbide in bulk silicon are + established and conformability to experimental findings + is discussed. Furthermore, results of the accurate + first-principles calculations on defects and carbon + diffusion in silicon are compared to results of + classical potential simulations revealing significant + limitations of the latter method. An approach to work + around this problem is proposed. Finally, results of + the classical potential molecular dynamics simulations + of large systems are examined, which reinforce previous + assumptions and give further insight into basic + processes involved in the silicon carbide transition.", } @Article{lindner95, @@ -1477,21 +1598,20 @@ Rauschenbach and B. Stritzker", title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} Layers in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "354", number = "", pages = "171", year = "1994", doi = "10.1557/PROC-354-171", URL = "http://dx.doi.org/10.1557/PROC-354-171", - eprint = "http://journals.cambridge.org/article_S1946427400420853", notes = "first time ibs at moderate temperatures", } @Article{lindner96, title = "Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "46", number = "2-3", pages = "147--155", @@ -1509,8 +1629,7 @@ @Article{calcagno96, title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by ion implantation", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "120", number = "1-4", pages = "121--124", @@ -1528,7 +1647,7 @@ @Article{lindner98, title = "Mechanisms of Si{C} Formation in the Ion Beam Synthesis of 3{C}-Si{C} Layers in Silicon", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "215--218", year = "1998", @@ -1618,11 +1737,27 @@ notes = "c int diffusion barrier", } +@Article{haeberlen10, + title = "Structural characterization of cubic and hexagonal + Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si", + journal = "Journal of Crystal Growth", + volume = "312", + number = "6", + pages = "762--769", + year = "2010", + note = "", + ISSN = "0022-0248", + doi = "10.1016/j.jcrysgro.2009.12.048", + URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452", + author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J. + K. N. Lindner and B. Stritzker", +} + @Article{ito04, title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial growth", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "238", number = "1-4", pages = "159--164", @@ -1640,7 +1775,7 @@ title = "Organometallic vapor phase epitaxial growth of Ga{N} on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion implantation into Si(1 1 1) substrate", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "261", number = "2-3", pages = "266--270", @@ -1657,7 +1792,7 @@ @Article{liu_l02, title = "Substrates for gallium nitride epitaxy", - journal = "Materials Science and Engineering: R: Reports", + journal = "Mater. Sci. Eng., R", volume = "37", number = "3", pages = "61--127", @@ -1673,7 +1808,7 @@ @Article{takeuchi91, title = "Growth of single crystalline Ga{N} film on Si substrate using 3{C}-Si{C} as an intermediate layer", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "115", number = "1-4", pages = "634--638", @@ -1878,7 +2013,7 @@ @Article{davis91, author = "R. F. Davis and G. Kelner and M. Shur and J. W. Palmour and J. A. Edmond", - journal = "Proceedings of the IEEE", + journal = "Proc. IEEE", title = "Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide", @@ -1950,7 +2085,7 @@ @Article{sarro00, title = "Silicon carbide as a new {MEMS} technology", - journal = "Sensors and Actuators A: Physical", + journal = "Seonsor. Actuator. A", volume = "82", number = "1-3", pages = "210--218", @@ -1969,7 +2104,7 @@ title = "Status of silicon carbide (Si{C}) as a wide-bandgap semiconductor for high-temperature applications: {A} review", - journal = "Solid-State Electronics", + journal = "Solid-State Electron.", volume = "39", number = "10", pages = "1409--1422", @@ -1984,7 +2119,7 @@ @Article{giancarli98, title = "Design requirements for Si{C}/Si{C} composites structural material in fusion power reactor blankets", - journal = "Fusion Engineering and Design", + journal = "Fusion Eng. Des.", volume = "41", number = "1-4", pages = "165--171", @@ -1998,7 +2133,7 @@ @Article{pensl93, title = "Electrical and optical characterization of Si{C}", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "185", number = "1-4", pages = "264--283", @@ -2027,7 +2162,7 @@ @Article{tairov81, title = "General principles of growing large-size single crystals of various silicon carbide polytypes", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "52", number = "Part 1", pages = "146--150", @@ -2041,7 +2176,7 @@ @Article{barrett91, title = "Si{C} boule growth by sublimation vapor transport", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "109", number = "1-4", pages = "17--23", @@ -2056,7 +2191,7 @@ @Article{barrett93, title = "Growth of large Si{C} single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "128", number = "1-4", pages = "358--362", @@ -2074,7 +2209,7 @@ title = "Control of polytype formation by surface energy effects during the growth of Si{C} monocrystals by the sublimation method", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "131", number = "1-2", pages = "71--74", @@ -2106,6 +2241,22 @@ notes = "cvd of 3c-sic on si, sic buffer layer", } +@Article{nagasawa06, + author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta", + title = "Reducing Planar Defects in 3{C}¿Si{C}", + journal = "Chemical Vapor Deposition", + volume = "12", + number = "8-9", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3862", + URL = "http://dx.doi.org/10.1002/cvde.200506466", + doi = "10.1002/cvde.200506466", + pages = "502--508", + keywords = "Defect structures, Epitaxy, Silicon carbide", + year = "2006", + notes = "cvd on si", +} + @Article{nishino87, author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono and Hiroyuki Matsunami", @@ -2131,7 +2282,7 @@ Single-Crystal Films on Si", publisher = "ECS", year = "1987", - journal = "Journal of The Electrochemical Society", + journal = "J. Electrochem. Soc.", volume = "134", number = "6", pages = "1558--1565", @@ -2166,7 +2317,7 @@ @Article{ueda90, title = "Crystal growth of Si{C} by step-controlled epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "104", number = "3", pages = "695--700", @@ -2330,7 +2481,7 @@ @Article{kaneda87, title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric properties of its p-n junction", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "81", number = "1-4", pages = "536--542", @@ -2440,7 +2591,7 @@ by ion implantation", publisher = "Taylor \& Francis", year = "1976", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "29", number = "1", pages = "13--15", @@ -2456,7 +2607,7 @@ by high doses of 70 and 310 ke{V} carbon ions", publisher = "Taylor \& Francis", year = "1980", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "48", number = "1", pages = "7", @@ -2505,7 +2656,7 @@ compounds formed in silicon by ion beam synthesis", publisher = "Taylor \& Francis", year = "1986", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "99", number = "1", pages = "71--81", @@ -2579,7 +2730,7 @@ Netherlands", title = "Boron implantations in silicon: {A} comparison of charge carrier and boron concentration profiles", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A", publisher = "Springer Berlin / Heidelberg", ISSN = "0947-8396", keyword = "Physics and Astronomy", @@ -2732,7 +2883,7 @@ author = "E Kasper", title = "Superlattices of group {IV} elements, a new possibility to produce direct band gap material", - journal = "Physica Scripta", + journal = "Phys. Scr.", volume = "T35", pages = "232--236", URL = "http://stacks.iop.org/1402-4896/T35/232", @@ -2787,7 +2938,7 @@ @Article{powell93_2, title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties of the ternary system", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "127", number = "1-4", pages = "425--429", @@ -2804,7 +2955,7 @@ author = "H. J. Osten", title = "Modification of Growth Modes in Lattice-Mismatched Epitaxial Systems: Si/Ge", - journal = "physica status solidi (a)", + journal = "phys. status solidi (a)", volume = "145", number = "2", publisher = "WILEY-VCH Verlag", @@ -2894,7 +3045,7 @@ @Article{born27, author = "M. Born and R. Oppenheimer", title = "Zur Quantentheorie der Molekeln", - journal = "Annalen der Physik", + journal = "Ann. Phys. (Leipzig)", volume = "389", number = "20", publisher = "WILEY-VCH Verlag", @@ -2923,8 +3074,7 @@ @Article{thomas27, title = "The calculation of atomic fields", author = "L. H. Thomas", - journal = "Mathematical Proceedings of the Cambridge - Philosophical Society", + journal = "Proc. Cambridge Philos. Soc.", volume = "23", pages = "542--548", year = "1927", @@ -2945,8 +3095,7 @@ title = "The Wave Mechanics of an Atom with a Non-Coulomb Central Field. Part {I}. Theory and Methods", author = "D. R. Hartree", - journal = "Mathematical Proceedings of the Cambridge - Philosophical Society", + journal = "Proc. Cambridge Philos. Soc.", volume = "24", pages = "89--110", year = "1928", @@ -3332,7 +3481,7 @@ } @Article{parcas_md, - title = "{PARCAS} molecular dynamics code", + journal = "{PARCAS} molecular dynamics code", author = "K. Nordlund", year = "2008", } @@ -3492,7 +3641,7 @@ @Article{chaussende07, author = "D. Chaussende and P. J. Wellmann and M. Pons", title = "Status of Si{C} bulk growth processes", - journal = "Journal of Physics D: Applied Physics", + journal = "J. Phys. D", volume = "40", number = "20", pages = "6150", @@ -3604,7 +3753,7 @@ Heteroepitaxial Growth", publisher = "WILEY-VCH Verlag", year = "1997", - journal = "physica status solidi (b)", + journal = "phys. status solidi (b)", volume = "202", pages = "405--420", URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", @@ -3688,7 +3837,7 @@ @Article{hornstra58, title = "Dislocations in the diamond lattice", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "5", number = "1-2", pages = "129--141", @@ -3894,7 +4043,6 @@ title = "The Fitting of Pseudopotentials to Experimental Data and Their Subsequent Application", editor = "Frederick Seitz Henry Ehrenreich and David Turnbull", - booktitle = "", publisher = "Academic Press", year = "1970", volume = "24", @@ -3921,6 +4069,20 @@ notes = "norm-conserving pseudopotentials", } +@Article{kleinman82, + journal = "Phys. Rev. Lett.", + month = may, + doi = "10.1103/PhysRevLett.48.1425", + issue = "20", + author = "Leonard Kleinman and D. M. Bylander", + title = "Efficacious Form for Model Pseudopotentials", + year = "1982", + URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425", + publisher = "American Physical Society", + pages = "1425--1428", + volume = "48", +} + @Article{troullier91, title = "Efficient pseudopotentials for plane-wave calculations", @@ -4002,7 +4164,7 @@ @Article{perdew02, title = "Generalized gradient approximations for exchange and correlation: {A} look backward and forward", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "172", number = "1-2", pages = "1--6", @@ -4155,6 +4317,22 @@ si", } +@Article{jones89, + doi = "10.1103/RevModPhys.61.689", + month = jul, + issue = "3", + author = "R. O. Jones and O. Gunnarsson", + year = "1989", + URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689", + publisher = "American Physical Society", + title = "The density functional formalism, its applications and + prospects", + pages = "689--746", + journal = "Rev. Mod. Phys.", + volume = "61", + notes = "dft intro", +} + @Article{park02, author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. T Soares and Y.-W. Kim and H. Kim and P. Desjardins and @@ -4355,7 +4533,7 @@ @Article{losev28, title = "Luminous carborundum detector and detection effect and oscillations with crystals", - journal = "Philosophical Magazine Series 7", + journal = "Philos. Mag. Series 7", volume = "6", number = "39", pages = "1024--1044", @@ -4453,7 +4631,7 @@ title = "Electronic Conduction in Silicon Carbide", publisher = "AIP", year = "1953", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "21", number = "5", pages = "821--827", @@ -4509,7 +4687,7 @@ Road 44135 Cleveland OH", title = "Progress in silicon carbide semiconductor electronics technology", - journal = "Journal of Electronic Materials", + journal = "J. Electron. Mater.", publisher = "Springer Boston", ISSN = "0361-5235", keyword = "Chemistry and Materials Science", @@ -4522,9 +4700,60 @@ notes = "sic data, advantages of 3c sic", } +@InProceedings{pribble02, + author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and + R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring + and J. J. Sumakeris and A. W. Saxler and J. W. + Milligan", + booktitle = "2002 IEEE MTT-S International Microwave Symposium + Digest", + title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in + power amplifier design", + year = "2002", + month = "", + volume = "", + number = "", + pages = "1819--1822", + doi = "10.1109/MWSYM.2002.1012216", + ISSN = "", + notes = "hdtv", +} + +@InProceedings{temcamani01, + author = "F. Temcamani and P. Pouvil and O. Noblanc and C. + Brylinski and P. Bannelier and B. Darges and J. P. + Prigent", + booktitle = "2001 IEEE MTT-S International Microwave Symposium + Digest", + title = "Silicon carbide {MESFET}s performances and application + in broadcast power amplifiers", + year = "2001", + month = "", + volume = "", + number = "", + pages = "641--644", + doi = "10.1109/MWSYM.2001.966976", + ISSN = "", + notes = "hdtv", +} + +@Article{pensl00, + author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu + and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu + Kimoto and Hiroyuki Matsunami", + title = "Traps at the Si{C}/Si{O2}-Interface", + journal = "MRS Proc.", + volume = "640", + number = "", + pages = "", + year = "2000", + doi = "10.1557/PROC-640-H3.2", + URL = "http://dx.doi.org/10.1557/PROC-640-H3.2", +} + @Article{bhatnagar93, author = "M. Bhatnagar and B. J. Baliga", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power devices", year = "1993", @@ -4545,10 +4774,84 @@ notes = "comparison 3c 6h sic and si devices", } +@Article{ryu01, + author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W. + Palmour", + journal = "IEEE Electron Device Lett.", + title = "1800 {V} {NPN} bipolar junction transistors in + 4{H}-Si{C}", + year = "2001", + month = mar, + volume = "22", + number = "3", + pages = "124--126", + keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction + transistor;SiC;blocking voltage;current gain;deep level + acceptor;minority carrier lifetime;on-resistance;power + switching device;temperature coefficient;carrier + lifetime;deep levels;minority carriers;power bipolar + transistors;silicon compounds;wide band gap + semiconductors;", + doi = "10.1109/55.910617", + ISSN = "0741-3106", +} + +@Article{baliga96, + author = "B. J. Baliga", + journal = "IEEE Trans. Electron Devices", + title = "Trends in power semiconductor devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1717--1731", + keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated + devices;MOS-gated thyristors;MPS rectifier;PIN + rectifier;Schottky rectifier;Si;SiC;SiC based + switches;TMBS rectifier;UMOS technology;VMOS + technology;bipolar power transistor;high voltage power + rectifiers;low voltage power rectifiers;power + MOSFET;power losses;power semiconductor devices;power + switch technology;review;semiconductor device + technology;MOS-controlled thyristors;bipolar transistor + switches;field effect transistor switches;gallium + arsenide;insulated gate bipolar transistors;p-i-n + diodes;power bipolar transistors;power field effect + transistors;power semiconductor devices;power + semiconductor diodes;power semiconductor + switches;reviews;silicon;silicon compounds;solid-state + rectifiers;thyristors;", + doi = "10.1109/16.536818", + ISSN = "0018-9383", +} + +@Article{bhatnagar92, + author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga", + journal = "IEEE Electron Device Lett.", + title = "Silicon-carbide high-voltage (400 {V}) Schottky + barrier diodes", + year = "1992", + month = oct, + volume = "13", + number = "10", + pages = "501--503", + keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier + diodes;breakdown + voltages;characteristics;fabrication;forward I-V + characteristics;forward voltage drop;on-state current + density;rectifiers;reverse I-V characteristics;reverse + recovery characteristics;sharp breakdown;temperature + range;Schottky-barrier diodes;platinum;power + electronics;semiconductor materials;silicon + compounds;solid-state rectifiers;", + doi = "10.1109/55.192814", + ISSN = "0741-3106", +} + @Article{neudeck94, author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. A. Powell and C. S. Salupo and L. G. Matus", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Electrical properties of epitaxial 3{C}- and 6{H}-Si{C} p-n junction diodes produced side-by-side on 6{H}-Si{C} substrates", @@ -4575,6 +4878,98 @@ substrate", } +@Article{weitzel96, + author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.} + and K. Moore and K. K. Nordquist and S. Allen and C. + Thero and M. Bhatnagar", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide high-power devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1732--1741", + keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky + barrier diodes;SiC;SiC devices;UMOSFET;current + density;high electric breakdown field;high saturated + electron drift velocity;high thermal + conductivity;high-power devices;packaged SIT;submicron + gate length MESFET;Schottky diodes;current + density;electric breakdown;power MESFET;power + MOSFET;power semiconductor devices;power semiconductor + diodes;reviews;silicon compounds;static induction + transistors;wide band gap semiconductors;", + doi = "10.1109/16.536819", + ISSN = "0018-9383", + notes = "high power devices", +} + +@Article{zhu08, + author = "Lin Zhu and T. P. Chow", + journal = "IEEE Trans. Electron Devices", + title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers", + year = "2008", + month = aug, + volume = "55", + number = "8", + pages = "1871--1874", + keywords = "H-SiC;OFF-state characteristics;ON-state + characteristics;blocking capability;high-voltage + Schottky rectifier;junction barrier Schottky + rectifier;lateral channel JBS rectifier;leakage + current;pinlike reverse characteristics;Schottky + barriers;Schottky diodes;leakage currents;rectifying + circuits;", + doi = "10.1109/TED.2008.926642", + ISSN = "0018-9383", +} + +@Article{brown93, + author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W. + Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond + and G. Gati and J. M. Pimbley and W. E. Schneider", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide {UV} photodiodes", + year = "1993", + month = feb, + volume = "40", + number = "2", + pages = "325--333", + keywords = "200 to 400 nm;6H epitaxial layers;SiC photodiodes;UV + responsivity characteristics;low dark current;low light + level UV detection;quantum + efficiency;reproducibility;reverse current + leakage;short circuit output current;leakage + currents;photodiodes;semiconductor + materials;short-circuit currents;silicon + compounds;ultraviolet detectors;", + doi = "10.1109/16.182509", + ISSN = "0018-9383", + notes = "sic photo diodes, uv detector", +} + +@Article{yan04, + author = "Feng Yan and Xiaobin Xin and S. Aslam and Yuegang Zhao + and D. Franz and J. H. Zhao and M. Weiner", + journal = "IEEE J. Quantum Electron.", + title = "4{H}-Si{C} {UV} photo detectors with large area and + very high specific detectivity", + year = "2004", + month = sep, + volume = "40", + number = "9", + pages = "1315--1320", + keywords = "-1 V; 1.2E-14 A; 210 to 350 nm; 4H-SiC UV + photodetectors; 5 mm; Pt/4H-SiC Schottky photodiodes; + SiC-Pt; leakage current; photoresponse spectra; quantum + efficiency; specific detectivity; Schottky diodes; + photodetectors; platinum; silicon compounds; wide band + gap semiconductors;", + doi = "10.1109/JQE.2004.833196", + ISSN = "0018-9197", + notes = "uv detector", +} + @Article{schulze98, author = "N. Schulze and D. L. Barrett and G. Pensl", collaboration = "", @@ -4594,6 +4989,56 @@ notes = "micropipe free 6h-sic pvt growth", } +@Article{frank51, + author = "F. C. Frank", + title = "Capillary equilibria of dislocated crystals", + journal = "Acta Crystallogr.", + year = "1951", + volume = "4", + number = "6", + pages = "497--501", + month = nov, + doi = "10.1107/S0365110X51001690", + URL = "http://dx.doi.org/10.1107/S0365110X51001690", + notes = "micropipe", +} + +@Article{heindl97, + author = "J. Heindl and H. P. Strunk and V. D. Heydemann and G. + Pensl", + title = "Micropipes: Hollow Tubes in Silicon Carbide", + journal = "phys. status solidi (a)", + volume = "162", + number = "1", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-396X", + URL = "http://dx.doi.org/10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7", + doi = "10.1002/1521-396X(199707)162:1<251::AID-PSSA251>3.0.CO;2-7", + pages = "251--262", + year = "1997", + notes = "micropipe", +} + +@Article{neudeck94_2, + author = "P. G. Neudeck and J. A. Powell", + journal = "IEEE Electron Device Lett.", + title = "Performance limiting micropipe defects in silicon + carbide wafers", + year = "1994", + month = feb, + volume = "15", + number = "2", + pages = "63--65", + keywords = "SiC;defect density;device ratings;epitaxially-grown pn + junction devices;micropipe defects;power devices;power + semiconductors;pre-avalanche reverse-bias point + failures;p-n homojunctions;power + electronics;semiconductor materials;silicon + compounds;", + doi = "10.1109/55.285372", + ISSN = "0741-3106", +} + @Article{pirouz87, author = "P. Pirouz and C. M. Chorey and J. A. Powell", collaboration = "", @@ -4617,7 +5062,7 @@ @Article{shibahara86, title = "Surface morphology of cubic Si{C}(100) grown on Si(100) by chemical vapor deposition", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "78", number = "3", pages = "538--544", @@ -4670,7 +5115,7 @@ @Article{fuyuki89, title = "Atomic layer epitaxy of cubic Si{C} by gas source {MBE} using surface superstructure", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "95", number = "1-4", pages = "461--463", @@ -4708,7 +5153,7 @@ @Article{yoshinobu90, title = "Atomic level control in gas source {MBE} growth of cubic Si{C}", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "99", number = "1-4", pages = "520--524", @@ -4785,7 +5230,7 @@ 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", publisher = "WILEY-VCH Verlag", year = "1997", - journal = "physica status solidi (b)", + journal = "phys. status solidi (b)", volume = "202", pages = "359--378", notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower @@ -4794,7 +5239,7 @@ @Article{takaoka98, title = "Initial stage of Si{C} growth on Si(1 0 0) surface", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "183", number = "1-2", pages = "175--182", @@ -4816,7 +5261,7 @@ title = "Low-temperature heteroepitaxial growth of cubic Si{C} on Si using hydrocarbon radicals by gas source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "150", number = "Part 2", pages = "934--938", @@ -4833,7 +5278,7 @@ author = "Volker Heine and Ching Cheng and Richard J. Needs", title = "The Preference of Silicon Carbide for Growth in the Metastable Cubic Form", - journal = "Journal of the American Ceramic Society", + journal = "J. Am. Ceram. Soc.", volume = "74", number = "10", publisher = "Blackwell Publishing Ltd", @@ -4851,7 +5296,7 @@ @Article{allendorf91, title = "The adsorption of {H}-atoms on polycrystalline [beta]-silicon carbide", - journal = "Surface Science", + journal = "Surf. Sci.", volume = "258", number = "1-3", pages = "177--189", @@ -4887,7 +5332,7 @@ @Article{newman85, author = "Ronald C. Newman", title = "Carbon in Crystalline Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "403", @@ -4899,7 +5344,7 @@ @Article{newman61, title = "The diffusivity of carbon in silicon", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "19", number = "3-4", pages = "230--234", @@ -4915,7 +5360,7 @@ @Article{goesele85, author = "U. Gösele", title = "The Role of Carbon and Point Defects in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "419", @@ -5006,7 +5451,7 @@ title = "The iterative calculation of a few of the lowest eigenvalues and corresponding eigenvectors of large real-symmetric matrices", - journal = "Journal of Computational Physics", + journal = "J. Comput. Phys.", volume = "17", number = "1", pages = "87--94", @@ -5017,3 +5462,104 @@ URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650", author = "Ernest R. Davidson", } + +@Book{adorno_mm, + title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten + Leben", + author = "T. W. Adorno", + ISBN = "978-3-518-01236-9", + URL = "http://books.google.com/books?id=coZqRAAACAAJ", + year = "1994", + publisher = "Suhrkamp", +} + +@Misc{attenberger03, + author = "Wilfried Attenberger and Jörg Lindner and Bernd + Stritzker", + title = "A {method} {for} {forming} {a} {layered} + {semiconductor} {structure} {and} {corresponding} + {structure}", + year = "2003", + month = apr, + day = "24", + note = "WO 2003/034484 A3R4", + version = "A3R4", + howpublished = "Patent Application", + nationality = "WO", + filing_num = "EP0211423", + yearfiled = "2002", + monthfiled = "10", + dayfiled = "11", + pat_refs = "", + ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L + 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L + 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B", + us_class = "", + abstract = "The following invention provides a method for forming + a layered semiconductor structure having a layer (5) of + a first semiconductor material on a substrate (1; 1') + of at least one second semiconductor material, + comprising the steps of: providing said substrate (1; + 1'); burying said layer (5) of said first semiconductor + material in said substrate (1; 1'), said buried layer + (5) having an upper surface (105) and a lower surface + (105) and dividing said substrate (1; 1') into an upper + part (1a) and a lower part (1b; 1b', 1c); creating a + buried damage layer (10; 10'; 10'', 100'') which at + least partly adjoins and/or at least partly includes + said upper surface (105) of said buried layer (5); and + removing said upper part (1a) of said substrate (1; 1') + and said buried damage layer (10; 10'; 10'', 100'') for + exposing said buried layer (5). The invention also + provides a corresponding layered semiconductor + structure.", +} + +@Article{zunger01, + author = "Alex Zunger", + title = "Pseudopotential Theory of Semiconductor Quantum Dots", + journal = "physica status solidi (b)", + volume = "224", + number = "3", + publisher = "WILEY-VCH Verlag Berlin GmbH", + ISSN = "1521-3951", + URL = "http://dx.doi.org/10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + doi = "10.1002/(SICI)1521-3951(200104)224:3<727::AID-PSSB727>3.0.CO;2-9", + pages = "727--734", + keywords = "71.15.Dx, 73.21.La, S5.11, S5.12, S7.11, S7.12, S8.11, + S8.12", + year = "2001", + notes = "configuration-interaction method, ci", +} + +@Article{robertson90, + author = "I. J. Robertson and M. C. Payne", + title = "k-point sampling and the k.p method in pseudopotential + total energy calculations", + journal = "Journal of Physics: Condensed Matter", + volume = "2", + number = "49", + pages = "9837", + URL = "http://stacks.iop.org/0953-8984/2/i=49/a=010", + year = "1990", + notes = "kp method", +} + +@Article{lange11, + volume = "84", + journal = "Phys. Rev. B", + author = "Bj{\"o}rn Lange and Christoph Freysoldt and J{\"o}rg + Neugebauer", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.085101", + doi = "10.1103/PhysRevB.84.085101", + year = "2011", + title = "Construction and performance of fully numerical + optimum atomic basis sets", + issue = "8", + publisher = "American Physical Society", + numpages = "11", + pages = "085101", + notes = "quamol, basis set, for planc", +} +