X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=c067659b27d8fcb95d723e5105ec79487e8cc20c;hp=66641a677ad4fd035cd4850244c7a0daac785c4d;hb=80529fc0a43e673aff411b5fce46b4e337e2b113;hpb=22bbeaa80fc6a1d531f14e0ae11da66ba3a74f9a diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 66641a6..c067659 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,16 @@ notes = "derivation of albe bond order formalism", } +@Article{bean71, + author = "A. R. Bean and R. C. Newman", + title = "", + journal = "J. Phys. Chem. Solids", + volume = "32", + pages = "1211", + year = "1971", + notes = "experimental solubility data of carbon in silicon", +} + @Article{capano97, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", @@ -49,6 +59,17 @@ year = "1997", } +@Article{fischer90, + author = "G. R. Fisher and P. Barnes", + title = "Towards a unified view of polytypism in silicon + carbide", + journal = "Philosophical Magazine Part B", + volume = "61", + pages = "217--236", + year = "1990", + notes = "sic polytypes", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -107,6 +128,16 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{moissan04, + author = "Henri Moissan", + title = "Nouvelles recherches sur la météorité de Cañon + Diablo", + journal = "Comptes rendus de l'Académie des Sciences", + volume = "139", + pages = "773--786", + year = "1904", +} + @Book{park98, author = "Y. S. Park", title = "Si{C} Materials and Devices", @@ -196,7 +227,7 @@ @Article{batra87, title = "Molecular-dynamics study of self-interstitials in silicon", - author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}", + author = "Inder P. Batra and Farid F. Abraham and S. Ciraci", journal = "Phys. Rev. B", volume = "35", number = "18", @@ -294,7 +325,8 @@ Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes", - author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}", + author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la + Rubia", journal = "Phys. Rev. B", volume = "55", number = "21", @@ -324,7 +356,8 @@ @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", - author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}", + author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R. + Corrales", journal = "Phys. Rev. B", volume = "64", number = "24", @@ -367,13 +400,14 @@ month = sep, doi = "10.1103/PhysRevLett.83.2351", publisher = "American Physical Society", - notes = "nice images of the defects", + notes = "nice images of the defects, si defect overview + + refs", } -@Article{capazd94, +@Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}", + author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -387,6 +421,23 @@ dumbbell", } +@Article{dal_pino93, + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. Dal Pino and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", +} + @Article{car84, title = "Microscopic Theory of Atomic Diffusion Mechanisms in Silicon", @@ -438,6 +489,21 @@ notes = "mc md, strain compensation in si ge by c insertion", } +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Communications", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -468,6 +534,21 @@ month = sep, doi = "10.1103/PhysRevB.42.5759", publisher = "American Physical Society", + notes = "carbon diffusion in silicon", +} + +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semiconductor Science and Technology", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", } @Article{strane96, @@ -486,7 +567,8 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}", + author = "P. Laveant and G. Gerth and P. Werner and U. + G{\"o}sele", journal = "Materials Science and Engineering B", volume = "89", number = "1-3", @@ -552,8 +634,8 @@ @Article{zirkelbach2007, title = "Monte Carlo simulation study of a selforganisation process leading to ordered precipitate structures", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Nucl. Instr. and Meth. B", volume = "257", number = "1--2", @@ -570,8 +652,8 @@ title = "Monte-Carlo simulation study of the self-organization of nanometric amorphous precipitates in regular arrays during ion irradiation", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Nucl. Instr. and Meth. B", volume = "242", number = "1--2", @@ -588,8 +670,8 @@ title = "Modelling of a selforganization process leading to periodic arrays of nanometric amorphous precipitates by ion irradiation", - author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N. - Lindner}", + author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner + and B. Stritzker", journal = "Comp. Mater. Sci.", volume = "33", number = "1--3", @@ -602,6 +684,56 @@ NETHERLANDS", } +@Article{lindner99, + title = "Controlling the density distribution of Si{C} + nanocrystals for the ion beam synthesis of buried Si{C} + layers in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "147", + number = "1-4", + pages = "249--255", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00598-9", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169", + author = "J. K. N. Lindner and B. Stritzker", + notes = "two-step implantation process", +} + +@Article{lindner99_2, + title = "Mechanisms in the ion beam synthesis of Si{C} layers + in silicon", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "148", + number = "1-4", + pages = "528--533", + year = "1999", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(98)00787-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", + author = "J. K. N. Lindner and B. Stritzker", +} + +@Article{lindner01, + title = "Ion beam synthesis of buried Si{C} layers in silicon: + Basic physical processes", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "178", + number = "1-4", + pages = "44--54", + year = "2001", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(01)00504-3", + URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", + author = "Jörg K. N. Lindner", +} + @Article{lindner02, title = "High-dose carbon implantations into silicon: fundamental studies for new technological tricks", @@ -715,6 +847,20 @@ publisher = "American Physical Society", } +@Article{tersoff90, + title = "Carbon defects and defect reactions in silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "64", + number = "15", + pages = "1757--1760", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevLett.64.1757", + publisher = "American Physical Society", +} + @Article{fahey89, title = "Point defects and dopant diffusion in silicon", author = "P. M. Fahey and P. B. Griffin and J. D. Plummer", @@ -863,3 +1009,487 @@ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc", author = "Yu. M. Tairov and V. F. Tsvetkov", } + +@Article{powell87, + author = "J. Anthony Powell and Lawrence G. Matus and Maria A. + Kuczmarski", + title = "Growth and Characterization of Cubic Si{C} + Single-Crystal Films on Si", + publisher = "ECS", + year = "1987", + journal = "Journal of The Electrochemical Society", + volume = "134", + number = "6", + pages = "1558--1565", + keywords = "semiconductor materials; silicon compounds; carbon + compounds; crystal morphology; electron mobility", + URL = "http://link.aip.org/link/?JES/134/1558/1", + doi = "10.1149/1.2100708", + notes = "blue light emitting diodes (led)", +} + +@Article{kimoto93, + author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo + and Hiroyuki Matsunami", + title = "Growth mechanism of 6{H}-Si{C} in step-controlled + epitaxy", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "73", + number = "2", + pages = "726--732", + keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE + RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL + VAPOR DEPOSITION", + URL = "http://link.aip.org/link/?JAP/73/726/1", + doi = "10.1063/1.353329", +} + +@Article{powell90, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of improved quality 3{C}-Si{C} films on + 6{H}-Si{C} substrates", + publisher = "AIP", + year = "1990", + journal = "Applied Physics Letters", + volume = "56", + number = "14", + pages = "1353--1355", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON + MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR + PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1353/1", + doi = "10.1063/1.102512", +} + +@Article{fissel95, + title = "Epitaxial growth of Si{C} thin films on Si-stabilized + [alpha]-Si{C}(0001) at low temperatures by solid-source + molecular beam epitaxy", + journal = "Journal of Crystal Growth", + volume = "154", + number = "1-2", + pages = "72--80", + year = "1995", + notes = "solid source mbe", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)00170-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", + author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter + and W. Richter", +} + +@Article{borders71, + author = "J. A. Borders and S. T. Picraux and W. Beezhold", + collaboration = "", + title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION} + {IMPLANTATION}", + publisher = "AIP", + year = "1971", + journal = "Applied Physics Letters", + volume = "18", + number = "11", + pages = "509--511", + URL = "http://link.aip.org/link/?APL/18/509/1", + notes = "first time sic by ibs", + doi = "10.1063/1.1653516", +} + +@Article{reeson87, + author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and + J. Davis and G. E. Celler", + collaboration = "", + title = "Formation of buried layers of beta-Si{C} using ion + beam synthesis and incoherent lamp annealing", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "51", + number = "26", + pages = "2242--2244", + keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION + IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS", + URL = "http://link.aip.org/link/?APL/51/2242/1", + doi = "10.1063/1.98953", + notes = "nice tem images, sic by ibs", +} + +@Article{scace59, + author = "R. I. Scace and G. A. Slack", + collaboration = "", + title = "Solubility of Carbon in Silicon and Germanium", + publisher = "AIP", + year = "1959", + journal = "The Journal of Chemical Physics", + volume = "30", + number = "6", + pages = "1551--1555", + URL = "http://link.aip.org/link/?JCP/30/1551/1", + doi = "10.1063/1.1730236", + notes = "solubility of c in c-si", +} + +@Article{cowern96, + author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and + F. W. Saris and W. Vandervorst", + collaboration = "", + title = "Role of {C} and {B} clusters in transient diffusion of + {B} in silicon", + publisher = "AIP", + year = "1996", + journal = "Applied Physics Letters", + volume = "68", + number = "8", + pages = "1150--1152", + keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING; + DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS; + SILICON", + URL = "http://link.aip.org/link/?APL/68/1150/1", + doi = "10.1063/1.115706", + notes = "suppression of transient enhanced diffusion (ted)", +} + +@Article{stolk95, + title = "Implantation and transient boron diffusion: the role + of the silicon self-interstitial", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "96", + number = "1-2", + pages = "187--195", + year = "1995", + note = "Selected Papers of the Tenth International Conference + on Ion Implantation Technology (IIT '94)", + ISSN = "0168-583X", + doi = "DOI: 10.1016/0168-583X(94)00481-1", + URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c", + author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham + and J. M. Poate", +} + +@Article{stolk97, + author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and + D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and + M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T. + E. Haynes", + collaboration = "", + title = "Physical mechanisms of transient enhanced dopant + diffusion in ion-implanted silicon", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "81", + number = "9", + pages = "6031--6050", + URL = "http://link.aip.org/link/?JAP/81/6031/1", + doi = "10.1063/1.364452", + notes = "ted, transient enhanced diffusion, c silicon trap", +} + +@Article{powell94, + author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", + collaboration = "", + title = "Formation of beta-Si{C} nanocrystals by the relaxation + of Si[sub 1 - y]{C}[sub y] random alloy layers", + publisher = "AIP", + year = "1994", + journal = "Applied Physics Letters", + volume = "64", + number = "3", + pages = "324--326", + keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS; + EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING; + TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS; + SYNTHESIS", + URL = "http://link.aip.org/link/?APL/64/324/1", + doi = "10.1063/1.111195", + notes = "beta sic nano crystals in si, mbe, annealing", +} + +@Article{soref91, + author = "Richard A. Soref", + collaboration = "", + title = "Optical band gap of the ternary semiconductor Si[sub 1 + - x - y]Ge[sub x]{C}[sub y]", + publisher = "AIP", + year = "1991", + journal = "Journal of Applied Physics", + volume = "70", + number = "4", + pages = "2470--2472", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP; + OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS; + TERNARY ALLOYS", + URL = "http://link.aip.org/link/?JAP/70/2470/1", + doi = "10.1063/1.349403", + notes = "band gap of strained si by c", +} + +@Article{kasper91, + author = "E Kasper", + title = "Superlattices of group {IV} elements, a new + possibility to produce direct band gap material", + journal = "Physica Scripta", + volume = "T35", + pages = "232--236", + URL = "http://stacks.iop.org/1402-4896/T35/232", + year = "1991", + notes = "superlattices, convert indirect band gap into a + quasi-direct one", +} + +@Article{osten99, + author = "H. J. Osten and J. Griesche and S. Scalese", + collaboration = "", + title = "Substitutional carbon incorporation in epitaxial + Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by + molecular beam epitaxy", + publisher = "AIP", + year = "1999", + journal = "Applied Physics Letters", + volume = "74", + number = "6", + pages = "836--838", + keywords = "molecular beam epitaxial growth; semiconductor growth; + wide band gap semiconductors; interstitials; silicon + compounds", + URL = "http://link.aip.org/link/?APL/74/836/1", + doi = "10.1063/1.123384", + notes = "substitutional c in si", +} + +@Article{hohenberg64, + title = "Inhomogeneous Electron Gas", + author = "P. Hohenberg and W. Kohn", + journal = "Phys. Rev.", + volume = "136", + number = "3B", + pages = "B864--B871", + numpages = "7", + year = "1964", + month = nov, + doi = "10.1103/PhysRev.136.B864", + publisher = "American Physical Society", + notes = "density functional theory, dft", +} + +@Article{kohn65, + title = "Self-Consistent Equations Including Exchange and + Correlation Effects", + author = "W. Kohn and L. J. Sham", + journal = "Phys. Rev.", + volume = "140", + number = "4A", + pages = "A1133--A1138", + numpages = "5", + year = "1965", + month = nov, + doi = "10.1103/PhysRev.140.A1133", + publisher = "American Physical Society", + notes = "dft, exchange and correlation", +} + +@Article{ruecker94, + title = "Strain-stabilized highly concentrated pseudomorphic + $Si1-x$$Cx$ layers in Si", + author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H. + J. Osten", + journal = "Phys. Rev. Lett.", + volume = "72", + number = "22", + pages = "3578--3581", + numpages = "3", + year = "1994", + month = may, + doi = "10.1103/PhysRevLett.72.3578", + publisher = "American Physical Society", + notes = "high c concentration in si, heterostructure, starined + si, dft", +} + +@Article{chang05, + title = "Electron Transport Model for Strained Silicon-Carbon + Alloy", + author = "Shu-Tong Chang and Chung-Yi Lin", + journal = "Japanese Journal of Applied Physics", + volume = "44", + number = "4B", + pages = "2257--2262", + numpages = "5", + year = "2005", + URL = "http://jjap.ipap.jp/link?JJAP/44/2257/", + doi = "10.1143/JJAP.44.2257", + publisher = "The Japan Society of Applied Physics", + notes = "enhance of electron mobility in starined si", +} + +@Article{osten97, + author = "H. J. Osten and P. Gaworzewski", + collaboration = "", + title = "Charge transport in strained Si[sub 1 - y]{C}[sub y] + and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on + Si(001)", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "82", + number = "10", + pages = "4977--4981", + keywords = "silicon compounds; Ge-Si alloys; wide band gap + semiconductors; semiconductor epitaxial layers; carrier + density; Hall mobility; interstitials; defect states", + URL = "http://link.aip.org/link/?JAP/82/4977/1", + doi = "10.1063/1.366364", + notes = "charge transport in strained si", +} + +@Article{PhysRevB.69.155214, + title = "Carbon-mediated aggregation of self-interstitials in + silicon: {A} large-scale molecular dynamics study", + author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno", + journal = "Phys. Rev. B", + volume = "69", + number = "15", + pages = "155214", + numpages = "8", + year = "2004", + month = apr, + doi = "10.1103/PhysRevB.69.155214", + publisher = "American Physical Society", + notes = "simulation using promising tersoff reparametrization", +} + +@Article{tang95, + title = "Atomistic simulation of thermomechanical properties of + \beta{}-Si{C}", + author = "Meijie Tang and Sidney Yip", + journal = "Phys. Rev. B", + volume = "52", + number = "21", + pages = "15150--15159", + numpages = "9", + year = "1995", + month = dec, + doi = "10.1103/PhysRevB.52.15150", + publisher = "American Physical Society", + notes = "promising tersoff reparametrization", +} + +@Article{barkema96, + title = "Event-Based Relaxation of Continuous Disordered + Systems", + author = "G. T. Barkema and Normand Mousseau", + journal = "Phys. Rev. Lett.", + volume = "77", + number = "21", + pages = "4358--4361", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4358", + publisher = "American Physical Society", + notes = "activation relaxation technique, art, speed up slow + dynamic mds", +} + +@Article{cances09, + author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K. + Minoukadeh and F. Willaime", + collaboration = "", + title = "Some improvements of the activation-relaxation + technique method for finding transition pathways on + potential energy surfaces", + publisher = "AIP", + year = "2009", + journal = "The Journal of Chemical Physics", + volume = "130", + number = "11", + eid = "114711", + numpages = "6", + pages = "114711", + keywords = "eigenvalues and eigenfunctions; iron; potential energy + surfaces; vacancies (crystal)", + URL = "http://link.aip.org/link/?JCP/130/114711/1", + doi = "10.1063/1.3088532", + notes = "improvements to art, refs for methods to find + transition pathways", +} + +@Article{parrinello81, + author = "M. Parrinello and A. Rahman", + collaboration = "", + title = "Polymorphic transitions in single crystals: {A} new + molecular dynamics method", + publisher = "AIP", + year = "1981", + journal = "Journal of Applied Physics", + volume = "52", + number = "12", + pages = "7182--7190", + keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL + MODELS; DYNAMICS; THEORETICAL DATA; STRESSES; + CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL; + COMPRESSION; TENSILE PROPERTIES; COMPARATIVE + EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES; + IMPACT SHOCK", + URL = "http://link.aip.org/link/?JAP/52/7182/1", + doi = "10.1063/1.328693", +} + +@Article{stillinger85, + title = "Computer simulation of local order in condensed phases + of silicon", + author = "Frank H. Stillinger and Thomas A. Weber", + journal = "Phys. Rev. B", + volume = "31", + number = "8", + pages = "5262--5271", + numpages = "9", + year = "1985", + month = apr, + doi = "10.1103/PhysRevB.31.5262", + publisher = "American Physical Society", +} + +@Article{bazant97, + title = "Environment-dependent interatomic potential for bulk + silicon", + author = "Martin Z. Bazant and Efthimios Kaxiras and J. F. + Justo", + journal = "Phys. Rev. B", + volume = "56", + number = "14", + pages = "8542--8552", + numpages = "10", + year = "1997", + month = oct, + doi = "10.1103/PhysRevB.56.8542", + publisher = "American Physical Society", +} + +@Article{justo98, + title = "Interatomic potential for silicon defects and + disordered phases", + author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios + Kaxiras and V. V. Bulatov and Sidney Yip", + journal = "Phys. Rev. B", + volume = "58", + number = "5", + pages = "2539--2550", + numpages = "11", + year = "1998", + month = aug, + doi = "10.1103/PhysRevB.58.2539", + publisher = "American Physical Society", +} + +@Article{parcas_md, + title = "{PARCAS} molecular dynamics code", + author = "K. Nordlund", + year = "2008", +}