X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=c0e915908d9f9c7f6fbacf77ea59dfb050d0dbc5;hp=076bf0e9de04e0da2386dadff2e8d379b7dbba76;hb=1edbeb59b2db2c95de26ce475e6cc82377da1813;hpb=8254d4d5d47359044bea0b54ebd73f1fe5366d3e diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 076bf0e..c0e9159 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -24,6 +24,21 @@ doi = "10.1103/PhysRevB.71.035211", } +@Article{erhart04, + title = "The role of thermostats in modeling vapor phase + condensation of silicon nanoparticles", + journal = "Applied Surface Science", + volume = "226", + number = "1-3", + pages = "12--18", + year = "2004", + note = "EMRS 2003 Symposium F, Nanostructures from Clusters", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2003.11.003", + URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738", + author = "Paul Erhart and Karsten Albe", +} + @Article{albe2002, title = "Modeling the metal-semiconductor interaction: Analytical bond-order potential for platinum-carbon", @@ -118,6 +133,7 @@ pages = "827--835", month = mar, year = "2003", + URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/", notes = "dual implantation, sic prec enhanced by vacancies, precipitation by interstitial and substitutional carbon, both mechanisms explained + refs", @@ -1200,6 +1216,27 @@ doi = "10.1063/1.110334", } +@Article{goorsky92, + author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F. + Legoues and J. Angilello and F. Cardone", + collaboration = "", + title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si + strained layer superlattices", + publisher = "AIP", + year = "1992", + journal = "Applied Physics Letters", + volume = "60", + number = "22", + pages = "2758--2760", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; + CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS + RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; + DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS", + URL = "http://link.aip.org/link/?APL/60/2758/1", + doi = "10.1063/1.106868", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -1612,6 +1649,36 @@ doi = "10.1063/1.1730376", } +@Article{horsfield96, + title = "Bond-order potentials: Theory and implementation", + author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and + D. G. Pettifor and M. Aoki", + journal = "Phys. Rev. B", + volume = "53", + number = "19", + pages = "12694--12712", + numpages = "18", + year = "1996", + month = may, + doi = "10.1103/PhysRevB.53.12694", + publisher = "American Physical Society", +} + +@Article{abell85, + title = "Empirical chemical pseudopotential theory of molecular + and metallic bonding", + author = "G. C. Abell", + journal = "Phys. Rev. B", + volume = "31", + number = "10", + pages = "6184--6196", + numpages = "12", + year = "1985", + month = may, + doi = "10.1103/PhysRevB.31.6184", + publisher = "American Physical Society", +} + @Article{tersoff_si1, title = "New empirical model for the structural properties of silicon", @@ -1627,6 +1694,21 @@ publisher = "American Physical Society", } +@Article{dodson87, + title = "Development of a many-body Tersoff-type potential for + silicon", + author = "Brian W. Dodson", + journal = "Phys. Rev. B", + volume = "35", + number = "6", + pages = "2795--2798", + numpages = "3", + year = "1987", + month = feb, + doi = "10.1103/PhysRevB.35.2795", + publisher = "American Physical Society", +} + @Article{tersoff_si2, title = "New empirical approach for the structure and energy of covalent systems", @@ -2364,8 +2446,8 @@ number = "1", pages = "71--81", URL = "http://www.informaworld.com/10.1080/00337578608209614", - notes = "ibs, comparison with sio and sin, higher temp or - time", + notes = "ibs, comparison with sio and sin, higher temp or time, + no c redistribution", } @Article{reeson87, @@ -4554,6 +4636,21 @@ eprint = "http://journals.cambridge.org/article_S1946427400543681", } +@Article{mukashev82, + title = "Defects in Carbon-Implanted Silicon", + author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru + Fukuoka and Haruo Saito", + journal = "Japanese Journal of Applied Physics", + volume = "21", + number = "Part 1, No. 2", + pages = "399--400", + numpages = "1", + year = "1982", + URL = "http://jjap.jsap.jp/link?JJAP/21/399/", + doi = "10.1143/JJAP.21.399", + publisher = "The Japan Society of Applied Physics", +} + @Article{puska98, title = "Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon", @@ -4592,3 +4689,26 @@ URL = "http://link.aip.org/link/?JAP/77/2978/1", doi = "10.1063/1.358714", } + +@Article{romano-rodriguez96, + title = "Detailed analysis of [beta]-Si{C} formation by high + dose carbon ion implantation in silicon", + journal = "Materials Science and Engineering B", + volume = "36", + number = "1-3", + pages = "282--285", + year = "1996", + note = "European Materials Research Society 1995 Spring + Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and + Oxygen in Silicon and in Other Elemental + Semiconductors", + ISSN = "0921-5107", + doi = "DOI: 10.1016/0921-5107(95)01283-4", + URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408", + author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio + and A. Pérez-Rodríguez and J. R. Morante and R. Kögler + and W. Skorupa", + keywords = "Silicon", + keywords = "Ion implantation", + notes = "incoherent 3c-sic precipitate", +}