X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=c55a0e126b55121ae014c7b6f3277c4987d33552;hp=2a483617c076450cbc260944e6035a2bc0773db5;hb=63f584cf2855650f0a8ff2bdebe4f33cb9099378;hpb=f837b50f06ad9f85879c4f9d9117fbd81fcd5824 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 2a48361..c55a0e1 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -1223,6 +1223,59 @@ doi = "10.1557/PROC-354-171", URL = "http://dx.doi.org/10.1557/PROC-354-171", eprint = "http://journals.cambridge.org/article_S1946427400420853", + notes = "first time ibs at moderate temperatures", +} + +@Article{lindner96, + title = "Formation of buried epitaxial silicon carbide layers + in silicon by ion beam synthesis", + journal = "Materials Chemistry and Physics", + volume = "46", + number = "2-3", + pages = "147--155", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/S0254-0584(97)80008-9", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7", + author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B. + Götz and A. Frohnwieser and B. Rauschenbach and B. + Stritzker", + notes = "dose window", +} + +@Article{calcagno96, + title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by + ion implantation", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "120", + number = "1-4", + pages = "121--124", + year = "1996", + note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on + New Trends in Ion Beam Processing of Materials", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(96)00492-2", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d", + author = "L. Calcagno and G. Compagnini and G. Foti and M. G. + Grimaldi and P. Musumeci", + notes = "dose window, graphitic bonds", +} + +@Article{lindner98, + title = "Mechanisms of Si{C} Formation in the Ion Beam + Synthesis of 3{C}-Si{C} Layers in Silicon", + journal = "Materials Science Forum", + volume = "264-268", + pages = "215--218", + year = "1998", + note = "", + doi = "10.4028/www.scientific.net/MSF.264-268.215", + URL = "http://www.scientific.net/MSF.264-268.215", + author = "J. K. N. Lindner and W. Reiber and B. Stritzker", + notes = "intermediate temperature for sharp interface + good + crystallinity", } @Article{lindner99, @@ -4090,3 +4143,24 @@ notes = "convergence k point supercell size, vacancy in silicon", } + +@Article{serre95, + author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A. + Romano-Rodr\'{\i}guez and J. R. Morante and R. + K{\"{o}}gler and W. Skorupa", + collaboration = "", + title = "Spectroscopic characterization of phases formed by + high-dose carbon ion implantation in silicon", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "77", + number = "7", + pages = "2978--2984", + keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS; + FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA; + PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE + DEPENDENCE; PRECIPITATES; ANNEALING", + URL = "http://link.aip.org/link/?JAP/77/2978/1", + doi = "10.1063/1.358714", +}