X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=dde2e2cc04818e9e0d9d73926f08d77d40cd40ea;hp=e5abf0d0a00891b3fa5d1674bda6a38b01e8c31e;hb=94afb95da60b2cdbcd5c328661715eda4416de19;hpb=57c4f83501c66926136800286a47ca736c474af8 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index e5abf0d..dde2e2c 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -5,7 +5,7 @@ @Article{schroedinger26, author = "E. Schrödinger", title = "Quantisierung als Eigenwertproblem", - journal = "Annalen der Physik", + journal = "Ann. Phys. (Leipzig)", volume = "384", number = "4", publisher = "WILEY-VCH Verlag", @@ -21,7 +21,7 @@ affiliation = "Institut d. Universität f. theor. Physik Leipzig", title = "Über die Quantenmechanik der Elektronen in Kristallgittern", - journal = "Zeitschrift für Physik A Hadrons and Nuclei", + journal = "Z. Phys.", publisher = "Springer Berlin / Heidelberg", ISSN = "0939-7922", keyword = "Physics and Astronomy", @@ -58,7 +58,7 @@ @Article{erhart04, title = "The role of thermostats in modeling vapor phase condensation of silicon nanoparticles", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "226", number = "1-3", pages = "12--18", @@ -133,6 +133,17 @@ } @Article{capano97, + author = "M. A. Capano and R. J. Trew", + title = "Silicon carbide electronic materials and devices", + journal = "MRS Bull.", + year = "1997", + volume = "22", + number = "3", + pages = "19--22", + publisher = "MATERIALS RESEARCH SOCIETY", +} + +@Article{capano97_old, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", journal = "MRS Bull.", @@ -159,7 +170,7 @@ title = "Synthesis of nano-sized Si{C} precipitates in Si by simultaneous dual-beam implantation of {C}+ and Si+ ions", - journal = "Appl. Phys. A: Mater. Sci. Process.", + journal = "Appl. Phys. A", volume = "76", pages = "827--835", month = mar, @@ -173,7 +184,7 @@ @Article{skorupa96, title = "Carbon-mediated effects in silicon and in silicon-related materials", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "44", number = "2", pages = "101--143", @@ -294,7 +305,7 @@ author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon Diablo", - journal = "Comptes rendus de l'Académie des Sciences", + journal = "C. R. Acad. Sci.", volume = "139", pages = "773--786", year = "1904", @@ -312,7 +323,7 @@ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and Calvin H. Carter Jr. and D. Asbury", title = "Si{C} Seeded Boule Growth", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "3--8", year = "1998", @@ -1003,7 +1014,7 @@ @Article{bean70, title = "Low temperature electron irradiation of silicon containing carbon", - journal = "Solid State Communications", + journal = "Solid State Commun.", volume = "8", number = "3", pages = "175--177", @@ -1371,6 +1382,24 @@ doi = "doi:10.1016/j.nimb.2006.12.118", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Periodically arranged, selforganised, nanometric, + amorphous precipitates have been observed after + high-fluence ion implantations into solids for a number + of ion/target combinations at certain implantation + conditions. A model describing the ordering process + based on compressive stress exerted by the amorphous + inclusions as a result of the density change upon + amorphisation is introduced. A Monte Carlo simulation + code, which focuses on high-fluence carbon + implantations into silicon, is able to reproduce + experimentally observed nanolamella distributions as + well as the formation of continuous amorphous layers. + By means of simulation, the selforganisation process + becomes traceable and detailed information about the + compositional and structural state during the ordering + process is obtained. Based on simulation results, a + recipe is proposed for producing broad distributions of + ordered lamellar structures.", } @Article{zirkelbach2006, @@ -1389,6 +1418,17 @@ doi = "doi:10.1016/j.nimb.2005.08.162", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "High-dose ion implantation of materials that undergo + drastic density change upon amorphization at certain + implantation conditions results in periodically + arranged, self-organized, nanometric configurations of + the amorphous phase. A simple model explaining the + phenomenon is introduced and implemented in a + Monte-Carlo simulation code. Through simulation + conditions for observing lamellar precipitates are + specified and additional information about the + compositional and structural state during the ordering + process is gained.", } @Article{zirkelbach2005, @@ -1407,6 +1447,21 @@ doi = "doi:10.1016/j.commatsci.2004.12.016", publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS", + abstract = "Ion irradiation of materials, which undergo a drastic + density change upon amorphization have been shown to + exhibit selforganized, nanometric structures of the + amorphous phase in the crystalline host lattice. In + order to better understand the process a + Monte-Carlo-simulation code based on a simple model is + developed. In the present work we focus on high-dose + carbon implantations into silicon. The simulation is + able to reproduce results gained by cross-sectional TEM + measurements of high-dose carbon implanted silicon. + Necessary conditions can be specified for the + self-organization process and information is gained + about the compositional and structural state during the + ordering process which is difficult to be obtained by + experiment.", } @Article{zirkelbach09, @@ -1431,6 +1486,22 @@ keywords = "Nucleation", keywords = "Defect formation", keywords = "Molecular dynamics simulations", + abstract = "The precipitation process of silicon carbide in + heavily carbon doped silicon is not yet fully + understood. High resolution transmission electron + microscopy observations suggest that in a first step + carbon atoms form C-Si dumbbells on regular Si lattice + sites which agglomerate into large clusters. In a + second step, when the cluster size reaches a radius of + a few nm, the high interfacial energy due to the SiC/Si + lattice misfit of almost 20\% is overcome and the + precipitation occurs. By simulation, details of the + precipitation process can be obtained on the atomic + level. A recently proposed parametrization of a + Tersoff-like bond order potential is used to model the + system appropriately. Preliminary results gained by + molecular dynamics simulations using this potential are + presented.", } @Article{zirkelbach10, @@ -1447,29 +1518,79 @@ month = sep, doi = "10.1103/PhysRevB.82.094110", publisher = "American Physical Society", -} - -@Article{zirkelbach11a, - title = "First principles study of defects in carbon implanted - silicon", - journal = "to be published", - volume = "", - number = "", - pages = "", - year = "2011", - author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner - and W. G. Schmidt and E. Rauls", -} - -@Article{zirkelbach11b, - title = "...", - journal = "to be published", - volume = "", - number = "", - pages = "", - year = "2011", + abstract = "A comparative theoretical investigation of carbon + interstitials in silicon is presented. Calculations + using classical potentials are compared to + first-principles density-functional theory calculations + of the geometries, formation, and activation energies + of the carbon dumbbell interstitial, showing the + importance of a quantum-mechanical description of this + system. In contrast to previous studies, the present + first-principles calculations of the interstitial + carbon migration path yield an activation energy that + excellently matches the experiment. The bond-centered + interstitial configuration shows a net magnetization of + two electrons, illustrating the need for spin-polarized + calculations.", +} + +@Article{zirkelbach11, + journal = "Phys. Rev. B", + month = aug, + URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126", + publisher = "American Physical Society", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. K. N. Lindner and W. G. Schmidt and E. Rauls", + title = "Combined \textit{ab initio} and classical potential + simulation study on silicon carbide precipitation in + silicon", + year = "2011", + pages = "064126", + numpages = "18", + volume = "84", + doi = "10.1103/PhysRevB.84.064126", + issue = "6", + abstract = "Atomistic simulations on the silicon carbide + precipitation in bulk silicon employing both, classical + potential and first-principles methods are presented. + The calculations aim at a comprehensive, microscopic + understanding of the precipitation mechanism in the + context of controversial discussions in the literature. + For the quantum-mechanical treatment, basic processes + assumed in the precipitation process are calculated in + feasible systems of small size. The migration mechanism + of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1 + 1 0> self-interstitial in otherwise defect-free silicon + are investigated using density functional theory + calculations. The influence of a nearby vacancy, + another carbon interstitial and a substitutional defect + as well as a silicon self-interstitial has been + investigated systematically. Interactions of various + combinations of defects have been characterized + including a couple of selected migration pathways + within these configurations. Almost all of the + investigated pairs of defects tend to agglomerate + allowing for a reduction in strain. The formation of + structures involving strong carbon-carbon bonds turns + out to be very unlikely. In contrast, substitutional + carbon occurs in all probability. A long range capture + radius has been observed for pairs of interstitial + carbon as well as interstitial carbon and vacancies. A + rather small capture radius is predicted for + substitutional carbon and silicon self-interstitials. + Initial assumptions regarding the precipitation + mechanism of silicon carbide in bulk silicon are + established and conformability to experimental findings + is discussed. Furthermore, results of the accurate + first-principles calculations on defects and carbon + diffusion in silicon are compared to results of + classical potential simulations revealing significant + limitations of the latter method. An approach to work + around this problem is proposed. Finally, results of + the classical potential molecular dynamics simulations + of large systems are examined, which reinforce previous + assumptions and give further insight into basic + processes involved in the silicon carbide transition.", } @Article{lindner95, @@ -1477,7 +1598,7 @@ Rauschenbach and B. Stritzker", title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} Layers in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "354", number = "", pages = "171", @@ -1491,7 +1612,7 @@ @Article{lindner96, title = "Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis", - journal = "Materials Chemistry and Physics", + journal = "Mater. Chem. Phys.", volume = "46", number = "2-3", pages = "147--155", @@ -1509,8 +1630,7 @@ @Article{calcagno96, title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by ion implantation", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "120", number = "1-4", pages = "121--124", @@ -1528,7 +1648,7 @@ @Article{lindner98, title = "Mechanisms of Si{C} Formation in the Ion Beam Synthesis of 3{C}-Si{C} Layers in Silicon", - journal = "Materials Science Forum", + journal = "Mater. Sci. Forum", volume = "264-268", pages = "215--218", year = "1998", @@ -1622,7 +1742,7 @@ title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its application in buffer layer for Ga{N} epitaxial growth", - journal = "Applied Surface Science", + journal = "Appl. Surf. Sci.", volume = "238", number = "1-4", pages = "159--164", @@ -1657,7 +1777,7 @@ @Article{liu_l02, title = "Substrates for gallium nitride epitaxy", - journal = "Materials Science and Engineering: R: Reports", + journal = "Mater. Sci. Eng., R", volume = "37", number = "3", pages = "61--127", @@ -1878,7 +1998,7 @@ @Article{davis91, author = "R. F. Davis and G. Kelner and M. Shur and J. W. Palmour and J. A. Edmond", - journal = "Proceedings of the IEEE", + journal = "Proc. IEEE", title = "Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide", @@ -1950,7 +2070,7 @@ @Article{sarro00, title = "Silicon carbide as a new {MEMS} technology", - journal = "Sensors and Actuators A: Physical", + journal = "Seonsor. Actuator. A", volume = "82", number = "1-3", pages = "210--218", @@ -1969,7 +2089,7 @@ title = "Status of silicon carbide (Si{C}) as a wide-bandgap semiconductor for high-temperature applications: {A} review", - journal = "Solid-State Electronics", + journal = "Solid-State Electron.", volume = "39", number = "10", pages = "1409--1422", @@ -1984,7 +2104,7 @@ @Article{giancarli98, title = "Design requirements for Si{C}/Si{C} composites structural material in fusion power reactor blankets", - journal = "Fusion Engineering and Design", + journal = "Fusion Eng. Des.", volume = "41", number = "1-4", pages = "165--171", @@ -1998,7 +2118,7 @@ @Article{pensl93, title = "Electrical and optical characterization of Si{C}", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "185", number = "1-4", pages = "264--283", @@ -2440,7 +2560,7 @@ by ion implantation", publisher = "Taylor \& Francis", year = "1976", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "29", number = "1", pages = "13--15", @@ -2456,7 +2576,7 @@ by high doses of 70 and 310 ke{V} carbon ions", publisher = "Taylor \& Francis", year = "1980", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "48", number = "1", pages = "7", @@ -2505,7 +2625,7 @@ compounds formed in silicon by ion beam synthesis", publisher = "Taylor \& Francis", year = "1986", - journal = "Radiation Effects", + journal = "Radiat. Eff.", volume = "99", number = "1", pages = "71--81", @@ -2579,7 +2699,7 @@ Netherlands", title = "Boron implantations in silicon: {A} comparison of charge carrier and boron concentration profiles", - journal = "Applied Physics A: Materials Science \& Processing", + journal = "Appl. Phys. A", publisher = "Springer Berlin / Heidelberg", ISSN = "0947-8396", keyword = "Physics and Astronomy", @@ -2732,7 +2852,7 @@ author = "E Kasper", title = "Superlattices of group {IV} elements, a new possibility to produce direct band gap material", - journal = "Physica Scripta", + journal = "Phys. Scr.", volume = "T35", pages = "232--236", URL = "http://stacks.iop.org/1402-4896/T35/232", @@ -2894,7 +3014,7 @@ @Article{born27, author = "M. Born and R. Oppenheimer", title = "Zur Quantentheorie der Molekeln", - journal = "Annalen der Physik", + journal = "Ann. Phys. (Leipzig)", volume = "389", number = "20", publisher = "WILEY-VCH Verlag", @@ -2923,8 +3043,7 @@ @Article{thomas27, title = "The calculation of atomic fields", author = "L. H. Thomas", - journal = "Mathematical Proceedings of the Cambridge - Philosophical Society", + journal = "Proc. Cambridge Philos. Soc.", volume = "23", pages = "542--548", year = "1927", @@ -2945,8 +3064,7 @@ title = "The Wave Mechanics of an Atom with a Non-Coulomb Central Field. Part {I}. Theory and Methods", author = "D. R. Hartree", - journal = "Mathematical Proceedings of the Cambridge - Philosophical Society", + journal = "Proc. Cambridge Philos. Soc.", volume = "24", pages = "89--110", year = "1928", @@ -3332,7 +3450,7 @@ } @Article{parcas_md, - title = "{PARCAS} molecular dynamics code", + journal = "{PARCAS} molecular dynamics code", author = "K. Nordlund", year = "2008", } @@ -3894,7 +4012,6 @@ title = "The Fitting of Pseudopotentials to Experimental Data and Their Subsequent Application", editor = "Frederick Seitz Henry Ehrenreich and David Turnbull", - booktitle = "", publisher = "Academic Press", year = "1970", volume = "24", @@ -4002,7 +4119,7 @@ @Article{perdew02, title = "Generalized gradient approximations for exchange and correlation: {A} look backward and forward", - journal = "Physica B: Condensed Matter", + journal = "Physica B", volume = "172", number = "1-2", pages = "1--6", @@ -4355,7 +4472,7 @@ @Article{losev28, title = "Luminous carborundum detector and detection effect and oscillations with crystals", - journal = "Philosophical Magazine Series 7", + journal = "Philos. Mag. Series 7", volume = "6", number = "39", pages = "1024--1044", @@ -4851,7 +4968,7 @@ @Article{allendorf91, title = "The adsorption of {H}-atoms on polycrystalline [beta]-silicon carbide", - journal = "Surface Science", + journal = "Surf. Sci.", volume = "258", number = "1-3", pages = "177--189", @@ -4887,7 +5004,7 @@ @Article{newman85, author = "Ronald C. Newman", title = "Carbon in Crystalline Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "403", @@ -4915,7 +5032,7 @@ @Article{goesele85, author = "U. Gösele", title = "The Role of Carbon and Point Defects in Silicon", - journal = "MRS Online Proceedings Library", + journal = "MRS Proc.", volume = "59", number = "", pages = "419",