X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=e5abf0d0a00891b3fa5d1674bda6a38b01e8c31e;hp=2b36164a4cbdbdf18f317d6f08141dd2f67667db;hb=57c4f83501c66926136800286a47ca736c474af8;hpb=49306f3bc88923d98a69410e35f1f9363628229f diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 2b36164..e5abf0d 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -2,6 +2,37 @@ % bibliography database % +@Article{schroedinger26, + author = "E. Schrödinger", + title = "Quantisierung als Eigenwertproblem", + journal = "Annalen der Physik", + volume = "384", + number = "4", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19263840404", + doi = "10.1002/andp.19263840404", + pages = "361--376", + year = "1926", +} + +@Article{bloch29, + author = "Felix Bloch", + affiliation = "Institut d. Universität f. theor. Physik Leipzig", + title = "Über die Quantenmechanik der Elektronen in + Kristallgittern", + journal = "Zeitschrift für Physik A Hadrons and Nuclei", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0939-7922", + keyword = "Physics and Astronomy", + pages = "555--600", + volume = "52", + issue = "7", + URL = "http://dx.doi.org/10.1007/BF01339455", + note = "10.1007/BF01339455", + year = "1929", +} + @Article{albe_sic_pot, author = "Paul Erhart and Karsten Albe", title = "Analytical potential for atomistic simulations of @@ -24,6 +55,21 @@ doi = "10.1103/PhysRevB.71.035211", } +@Article{erhart04, + title = "The role of thermostats in modeling vapor phase + condensation of silicon nanoparticles", + journal = "Applied Surface Science", + volume = "226", + number = "1-3", + pages = "12--18", + year = "2004", + note = "EMRS 2003 Symposium F, Nanostructures from Clusters", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2003.11.003", + URL = "http://www.sciencedirect.com/science/article/B6THY-4B957HV-8/2/b35dbe80a70d173f6f7a00dacbcbd738", + author = "Paul Erhart and Karsten Albe", +} + @Article{albe2002, title = "Modeling the metal-semiconductor interaction: Analytical bond-order potential for platinum-carbon", @@ -40,13 +86,49 @@ notes = "derivation of albe bond order formalism", } +@Article{newman65, + title = "Vibrational absorption of carbon in silicon", + journal = "J. Phys. Chem. Solids", + volume = "26", + number = "2", + pages = "373--379", + year = "1965", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(65)90166-6", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667", + author = "R. C. Newman and J. B. Willis", + notes = "c impurity dissolved as substitutional c in si", +} + +@Article{baker68, + author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C. + Buschert", + collaboration = "", + title = "Effect of Carbon on the Lattice Parameter of Silicon", + publisher = "AIP", + year = "1968", + journal = "J. Appl. Phys.", + volume = "39", + number = "9", + pages = "4365--4368", + URL = "http://link.aip.org/link/?JAP/39/4365/1", + doi = "10.1063/1.1656977", + notes = "lattice contraction due to subst c", +} + @Article{bean71, - author = "A. R. Bean and R. C. Newman", - title = "", + title = "The solubility of carbon in pulled silicon crystals", journal = "J. Phys. Chem. Solids", volume = "32", - pages = "1211", + number = "6", + pages = "1211--1219", year = "1971", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/S0022-3697(71)80179-8", + URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5", + author = "A. R. Bean and R. C. Newman", notes = "experimental solubility data of carbon in silicon", } @@ -63,13 +145,47 @@ author = "G. R. Fisher and P. Barnes", title = "Towards a unified view of polytypism in silicon carbide", - journal = "Philosophical Magazine Part B", + journal = "Philos. Mag. B", volume = "61", pages = "217--236", year = "1990", notes = "sic polytypes", } +@Article{koegler03, + author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and + A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C. + Serre and A. Perez-Rodriguez", + title = "Synthesis of nano-sized Si{C} precipitates in Si by + simultaneous dual-beam implantation of {C}+ and Si+ + ions", + journal = "Appl. Phys. A: Mater. Sci. Process.", + volume = "76", + pages = "827--835", + month = mar, + year = "2003", + URL = "http://www.springerlink.com/content/jr8xj33mqc5vpwwj/", + notes = "dual implantation, sic prec enhanced by vacancies, + precipitation by interstitial and substitutional + carbon, both mechanisms explained + refs", +} + +@Article{skorupa96, + title = "Carbon-mediated effects in silicon and in + silicon-related materials", + journal = "Materials Chemistry and Physics", + volume = "44", + number = "2", + pages = "101--143", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/0254-0584(95)01673-I", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982", + author = "W. Skorupa and R. A. Yankov", + notes = "review of silicon carbon compound", +} + @Book{laplace, author = "P. S. de Laplace", title = "Th\'eorie analytique des probabilit\'es", @@ -144,6 +260,36 @@ notes = "virial derivation for 3-body tersoff potential", } +@Article{nielsen83, + title = "First-Principles Calculation of Stress", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. Lett.", + volume = "50", + number = "9", + pages = "697--700", + numpages = "3", + year = "1983", + month = feb, + doi = "10.1103/PhysRevLett.50.697", + publisher = "American Physical Society", + notes = "generalization of virial theorem", +} + +@Article{nielsen85, + title = "Quantum-mechanical theory of stress and force", + author = "O. H. Nielsen and Richard M. Martin", + journal = "Phys. Rev. B", + volume = "32", + number = "6", + pages = "3780--3791", + numpages = "11", + year = "1985", + month = sep, + doi = "10.1103/PhysRevB.32.3780", + publisher = "American Physical Society", + notes = "dft virial stress and forces", +} + @Article{moissan04, author = "Henri Moissan", title = "Nouvelles recherches sur la météorité de Cañon @@ -196,7 +342,7 @@ title = "Molecular dynamics with coupling to an external bath", publisher = "AIP", year = "1984", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "81", number = "8", pages = "3684--3690", @@ -213,8 +359,7 @@ title = "Molecular dynamics determination of defect energetics in beta -Si{C} using three representative empirical potentials", - journal = "Modelling and Simulation in Materials Science and - Engineering", + journal = "Modell. Simul. Mater. Sci. Eng.", volume = "3", number = "5", pages = "615--627", @@ -224,7 +369,7 @@ year = "1995", } -@Article{tersoff89, +@Article{brenner89, title = "Relationship between the embedded-atom method and Tersoff potentials", author = "Donald W. Brenner", @@ -274,7 +419,7 @@ dumbbell configuration", } -@Article{gao02, +@Article{gao02a, title = "Cascade overlap and amorphization in $3{C}-Si{C}:$ Defect accumulation, topological features, and disordering", @@ -296,8 +441,7 @@ @Article{devanathan98, title = "Computer simulation of a 10 ke{V} Si displacement cascade in Si{C}", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "141", number = "1-4", pages = "118--122", @@ -312,7 +456,7 @@ @Article{devanathan98_2, title = "Displacement threshold energies in [beta]-Si{C}", - journal = "Journal of Nuclear Materials", + journal = "J. Nucl. Mater.", volume = "253", number = "1-3", pages = "47--52", @@ -325,7 +469,7 @@ tersoff", } -@Article{batra87, +@Article{kitabatake00, title = "Si{C}/Si heteroepitaxial growth", author = "M. Kitabatake", journal = "Thin Solid Films", @@ -355,7 +499,94 @@ notes = "si self interstitial, diffusion, tbmd", } -@Article{tang97, +@Article{johnson98, + author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la + Rubia", + collaboration = "", + title = "A kinetic Monte--Carlo study of the effective + diffusivity of the silicon self-interstitial in the + presence of carbon and boron", + publisher = "AIP", + year = "1998", + journal = "J. Appl. Phys.", + volume = "84", + number = "4", + pages = "1963--1967", + keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS; + CARBON ADDITIONS; BORON ADDITIONS; elemental + semiconductors; self-diffusion", + URL = "http://link.aip.org/link/?JAP/84/1963/1", + doi = "10.1063/1.368328", + notes = "kinetic monte carlo of si self interstitial + diffsuion", +} + +@Article{bar-yam84, + title = "Barrier to Migration of the Silicon + Self-Interstitial", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. Lett.", + volume = "52", + number = "13", + pages = "1129--1132", + numpages = "3", + year = "1984", + month = mar, + doi = "10.1103/PhysRevLett.52.1129", + publisher = "American Physical Society", + notes = "si self-interstitial migration barrier", +} + +@Article{bar-yam84_2, + title = "Electronic structure and total-energy migration + barriers of silicon self-interstitials", + author = "Y. Bar-Yam and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "30", + number = "4", + pages = "1844--1852", + numpages = "8", + year = "1984", + month = aug, + doi = "10.1103/PhysRevB.30.1844", + publisher = "American Physical Society", +} + +@Article{bloechl93, + title = "First-principles calculations of self-diffusion + constants in silicon", + author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car + and D. B. Laks and W. Andreoni and S. T. Pantelides", + journal = "Phys. Rev. Lett.", + volume = "70", + number = "16", + pages = "2435--2438", + numpages = "3", + year = "1993", + month = apr, + doi = "10.1103/PhysRevLett.70.2435", + publisher = "American Physical Society", + notes = "si self int diffusion by ab initio md, formation + entropy calculations", +} + +@Article{munro99, + title = "Defect migration in crystalline silicon", + author = "Lindsey J. Munro and David J. Wales", + journal = "Phys. Rev. B", + volume = "59", + number = "6", + pages = "3969--3980", + numpages = "11", + year = "1999", + month = feb, + doi = "10.1103/PhysRevB.59.3969", + publisher = "American Physical Society", + notes = "eigenvector following method, vacancy and interstiial + defect migration mechanisms", +} + +@Article{colombo02, title = "Tight-binding theory of native point defects in silicon", author = "L. Colombo", @@ -383,7 +614,75 @@ doi = "10.1103/PhysRevB.68.235205", publisher = "American Physical Society", notes = "formation energies of intrinisc point defects in - silicon, si self interstitials", + silicon, si self interstitials, free energy", +} + +@Article{mattsson08, + title = "Electronic surface error in the Si interstitial + formation energy", + author = "Ann E. Mattsson and Ryan R. Wixom and Rickard + Armiento", + journal = "Phys. Rev. B", + volume = "77", + number = "15", + pages = "155211", + numpages = "7", + year = "2008", + month = apr, + doi = "10.1103/PhysRevB.77.155211", + publisher = "American Physical Society", + notes = "si self interstitial formation energies by dft", +} + +@Article{goedecker02, + title = "A Fourfold Coordinated Point Defect in Silicon", + author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", + journal = "Phys. Rev. Lett.", + volume = "88", + number = "23", + pages = "235501", + numpages = "4", + year = "2002", + month = may, + doi = "10.1103/PhysRevLett.88.235501", + publisher = "American Physical Society", + notes = "first time ffcd, fourfold coordinated point defect in + silicon", +} + +@Article{sahli05, + title = "Ab initio molecular dynamics simulation of + self-interstitial diffusion in silicon", + author = "Beat Sahli and Wolfgang Fichtner", + journal = "Phys. Rev. B", + volume = "72", + number = "24", + pages = "245210", + numpages = "6", + year = "2005", + month = dec, + doi = "10.1103/PhysRevB.72.245210", + publisher = "American Physical Society", + notes = "si self int, diffusion, barrier height, voronoi + mapping applied", +} + +@Article{hobler05, + title = "Ab initio calculations of the interaction between + native point defects in silicon", + journal = "Mater. Sci. Eng., B", + volume = "124-125", + number = "", + pages = "368--371", + year = "2005", + note = "EMRS 2005, Symposium D - Materials Science and Device + Issues for Future Technologies", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2005.08.072", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4", + author = "G. Hobler and G. Kresse", + notes = "vasp intrinsic si defect interaction study, capture + radius", } @Article{ma10, @@ -403,6 +702,39 @@ notes = "si self interstitial diffusion + refs", } +@Article{posselt06, + title = "Atomistic simulations on the thermal stability of the + antisite pair in 3{C}- and 4{H}-Si{C}", + author = "M. Posselt and F. Gao and W. J. Weber", + journal = "Phys. Rev. B", + volume = "73", + number = "12", + pages = "125206", + numpages = "8", + year = "2006", + month = mar, + doi = "10.1103/PhysRevB.73.125206", + publisher = "American Physical Society", +} + +@Article{posselt08, + title = "Correlation between self-diffusion in Si and the + migration mechanisms of vacancies and + self-interstitials: An atomistic study", + author = "M. Posselt and F. Gao and H. Bracht", + journal = "Phys. Rev. B", + volume = "78", + number = "3", + pages = "035208", + numpages = "9", + year = "2008", + month = jul, + doi = "10.1103/PhysRevB.78.035208", + publisher = "American Physical Society", + notes = "si self-interstitial and vacancy diffusion, stillinger + weber and tersoff", +} + @Article{gao2001, title = "Ab initio and empirical-potential studies of defect properties in $3{C}-Si{C}$", @@ -420,6 +752,66 @@ notes = "defects in 3c-sic", } +@Article{gao02, + title = "Empirical potential approach for defect properties in + 3{C}-Si{C}", + journal = "Nucl. Instrum. Methods Phys. Res. B", + volume = "191", + number = "1-4", + pages = "487--496", + year = "2002", + note = "", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(02)00600-6", + URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7", + author = "Fei Gao and William J. Weber", + keywords = "Empirical potential", + keywords = "Defect properties", + keywords = "Silicon carbide", + keywords = "Computer simulation", + notes = "sic potential, brenner type, like erhart/albe", +} + +@Article{gao04, + title = "Atomistic study of intrinsic defect migration in + 3{C}-Si{C}", + author = "Fei Gao and William J. Weber and M. Posselt and V. + Belko", + journal = "Phys. Rev. B", + volume = "69", + number = "24", + pages = "245205", + numpages = "5", + year = "2004", + month = jun, + doi = "10.1103/PhysRevB.69.245205", + publisher = "American Physical Society", + notes = "defect migration in sic", +} + +@Article{gao07, + author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and + W. J. Weber", + collaboration = "", + title = "Ab Initio atomic simulations of antisite pair recovery + in cubic silicon carbide", + publisher = "AIP", + year = "2007", + journal = "Appl. Phys. Lett.", + volume = "90", + number = "22", + eid = "221915", + numpages = "3", + pages = "221915", + keywords = "ab initio calculations; silicon compounds; antisite + defects; wide band gap semiconductors; molecular + dynamics method; density functional theory; + electron-hole recombination; photoluminescence; + impurities; diffusion", + URL = "http://link.aip.org/link/?APL/90/221915/1", + doi = "10.1063/1.2743751", +} + @Article{mattoni2002, title = "Self-interstitial trapping by carbon complexes in crystalline silicon", @@ -434,8 +826,8 @@ doi = "10.1103/PhysRevB.66.195214", publisher = "American Physical Society", notes = "c in c-si, diffusion, interstitial configuration + - links, interaction of carbon and silicon - interstitials", + links, interaction of carbon and silicon interstitials, + tersoff suitability", } @Article{leung99, @@ -458,7 +850,7 @@ @Article{capaz94, title = "Identification of the migration path of interstitial carbon in silicon", - author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "50", number = "11", @@ -472,10 +864,62 @@ dumbbell", } +@Article{capaz98, + title = "Theory of carbon-carbon pairs in silicon", + author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos", + journal = "Phys. Rev. B", + volume = "58", + number = "15", + pages = "9845--9850", + numpages = "5", + year = "1998", + month = oct, + doi = "10.1103/PhysRevB.58.9845", + publisher = "American Physical Society", + notes = "c_i c_s pair configuration, theoretical results", +} + +@Article{song90_2, + title = "Bistable interstitial-carbon--substitutional-carbon + pair in silicon", + author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D. + Watkins", + journal = "Phys. Rev. B", + volume = "42", + number = "9", + pages = "5765--5783", + numpages = "18", + year = "1990", + month = sep, + doi = "10.1103/PhysRevB.42.5765", + publisher = "American Physical Society", + notes = "c_i c_s pair configuration, experimental results", +} + +@Article{liu02, + author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and + Shifeng Lu and Xiang-Yang Liu", + collaboration = "", + title = "Ab initio modeling and experimental study of {C}--{B} + interactions in Si", + publisher = "AIP", + year = "2002", + journal = "Appl. Phys. Lett.", + volume = "80", + number = "1", + pages = "52--54", + keywords = "silicon; boron; carbon; elemental semiconductors; + impurity-defect interactions; ab initio calculations; + secondary ion mass spectra; diffusion; interstitials", + URL = "http://link.aip.org/link/?APL/80/52/1", + doi = "10.1063/1.1430505", + notes = "c-c 100 split, lower as a and b states of capaz", +} + @Article{dal_pino93, title = "Ab initio investigation of carbon-related defects in silicon", - author = "A. Dal Pino and Andrew M. Rappe and J. D. + author = "A. {Dal Pino} and Andrew M. Rappe and J. D. Joannopoulos", journal = "Phys. Rev. B", volume = "47", @@ -507,6 +951,22 @@ path formation", } +@Article{car85, + title = "Unified Approach for Molecular Dynamics and + Density-Functional Theory", + author = "R. Car and M. Parrinello", + journal = "Phys. Rev. Lett.", + volume = "55", + number = "22", + pages = "2471--2474", + numpages = "3", + year = "1985", + month = nov, + doi = "10.1103/PhysRevLett.55.2471", + publisher = "American Physical Society", + notes = "car parrinello method, dft and md", +} + @Article{kelires97, title = "Short-range order, bulk moduli, and physical trends in c-$Si1-x$$Cx$ alloys", @@ -555,6 +1015,24 @@ author = "A. R. Bean and R. C. Newman", } +@Article{durand99, + author = "F. Durand and J. Duby", + affiliation = "EPM-Madylam, CNRS and INP Grenoble, France", + title = "Carbon solubility in solid and liquid silicon—{A} + review with reference to eutectic equilibrium", + journal = "Journal of Phase Equilibria", + publisher = "Springer New York", + ISSN = "1054-9714", + keyword = "Chemistry and Materials Science", + pages = "61--63", + volume = "20", + issue = "1", + URL = "http://dx.doi.org/10.1361/105497199770335956", + note = "10.1361/105497199770335956", + year = "1999", + notes = "better c solubility limit in silicon", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -575,7 +1053,7 @@ @Article{song90, title = "{EPR} identification of the single-acceptor state of interstitial carbon in silicon", - author = "G. D. Watkins L. W. Song", + author = "L. W. Song and G. D. Watkins", journal = "Phys. Rev. B", volume = "42", number = "9", @@ -592,7 +1070,7 @@ author = "A K Tipping and R C Newman", title = "The diffusion coefficient of interstitial carbon in silicon", - journal = "Semiconductor Science and Technology", + journal = "Semicond. Sci. Technol.", volume = "2", number = "5", pages = "315--317", @@ -602,6 +1080,26 @@ silicon", } +@Article{isomae93, + author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and + Masao Tamura", + collaboration = "", + title = "Annealing behavior of Me{V} implanted carbon in + silicon", + publisher = "AIP", + year = "1993", + journal = "J. Appl. Phys.", + volume = "74", + number = "6", + pages = "3815--3820", + keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV + RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH + PROFILES", + URL = "http://link.aip.org/link/?JAP/74/3815/1", + doi = "10.1063/1.354474", + notes = "c at interstitial location for rt implantation in si", +} + @Article{strane96, title = "Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy", @@ -618,17 +1116,53 @@ @Article{laveant2002, title = "Epitaxy of carbon-rich silicon with {MBE}", - author = "P. Laveant and G. Gerth and P. Werner and U. - G{\"o}sele", - journal = "Materials Science and Engineering B", + journal = "Mater. Sci. Eng., B", volume = "89", number = "1-3", pages = "241--245", - keywords = "Growth; Epitaxy; MBE; Carbon; Silicon", + year = "2002", + ISSN = "0921-5107", + doi = "DOI: 10.1016/S0921-5107(01)00794-2", + URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268", + author = "P. Lav\'eant and G. Gerth and P. Werner and U. + G{\"{o}}sele", notes = "low c in si, tensile stress to compensate compressive stress, avoid sic precipitation", } +@Article{foell77, + title = "The formation of swirl defects in silicon by + agglomeration of self-interstitials", + journal = "J. Cryst. Growth", + volume = "40", + number = "1", + pages = "90--108", + year = "1977", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(77)90034-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "b-swirl: si + c interstitial agglomerates, c-si + agglomerate", +} + +@Article{foell81, + title = "Microdefects in silicon and their relation to point + defects", + journal = "J. Cryst. Growth", + volume = "52", + number = "Part 2", + pages = "907--916", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90397-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "swirl review", +} + @Article{werner97, author = "P. Werner and S. Eichler and G. Mariani and R. K{\"{o}}gler and W. Skorupa", @@ -636,7 +1170,7 @@ silicon by transmission electron microscopy", publisher = "AIP", year = "1997", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "70", number = "2", pages = "252--254", @@ -650,26 +1184,166 @@ precipitate", } -@Article{strane94, - author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. - Picraux and J. K. Watanabe and J. W. Mayer", +@InProceedings{werner96, + author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. + Eichler", + booktitle = "Proceedings of the 11th International Conference on + Ion Implantation Technology.", + title = "{TEM} investigation of {C}-Si defects in carbon + implanted silicon", + year = "1996", + month = jun, + volume = "", + number = "", + pages = "675--678", + doi = "10.1109/IIT.1996.586497", + ISSN = "", + notes = "c-si agglomerates dumbbells", +} + +@Article{werner98, + author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and + D. C. Jacobson", collaboration = "", - title = "Precipitation and relaxation in strained Si[sub 1 - - y]{C}[sub y]/Si heterostructures", + title = "Carbon diffusion in silicon", publisher = "AIP", - year = "1994", - journal = "Journal of Applied Physics", - volume = "76", - number = "6", - pages = "3656--3668", - keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", - URL = "http://link.aip.org/link/?JAP/76/3656/1", - doi = "10.1063/1.357429", - notes = "strained si-c to 3c-sic, carbon nucleation + refs", + year = "1998", + journal = "Appl. Phys. Lett.", + volume = "73", + number = "17", + pages = "2465--2467", + keywords = "silicon; carbon; elemental semiconductors; diffusion; + secondary ion mass spectra; semiconductor epitaxial + layers; annealing; impurity-defect interactions; + impurity distribution", + URL = "http://link.aip.org/link/?APL/73/2465/1", + doi = "10.1063/1.122483", + notes = "c diffusion in si, kick out mechnism", } -@Article{edgar92, - title = "Prospects for device implementation of wide band gap +@Article{kalejs84, + author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele", + collaboration = "", + title = "Self-interstitial enhanced carbon diffusion in + silicon", + publisher = "AIP", + year = "1984", + journal = "Appl. Phys. Lett.", + volume = "45", + number = "3", + pages = "268--269", + keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS; + CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH + TEMPERATURE; IMPURITIES", + URL = "http://link.aip.org/link/?APL/45/268/1", + doi = "10.1063/1.95167", + notes = "c diffusion due to si self-interstitials", +} + +@Article{fukami90, + author = "Akira Fukami and Ken-ichi Shoji and Takahiro Nagano + and Cary Y. Yang", + collaboration = "", + title = "Characterization of SiGe/Si heterostructures formed by + Ge[sup + ] and {C}[sup + ] implantation", + publisher = "AIP", + year = "1990", + journal = "Appl. Phys. Lett.", + volume = "57", + number = "22", + pages = "2345--2347", + keywords = "HETEROJUNCTIONS; ION IMPLANTATION; HETEROSTRUCTURES; + FABRICATION; PN JUNCTIONS; LEAKAGE CURRENT; GERMANIUM + SILICIDES; SILICON; ELECTRICAL PROPERTIES; SOLIDPHASE + EPITAXY; CARBON IONS; GERMANIUM IONS", + URL = "http://link.aip.org/link/?APL/57/2345/1", + doi = "10.1063/1.103888", +} + +@Article{strane93, + author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L. + Doyle and S. T. Picraux and J. W. Mayer", + collaboration = "", + title = "Metastable SiGe{C} formation by solid phase epitaxy", + publisher = "AIP", + year = "1993", + journal = "Appl. Phys. Lett.", + volume = "63", + number = "20", + pages = "2786--2788", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY + SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES; + ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD + SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE + EPITAXY; AMORPHIZATION", + URL = "http://link.aip.org/link/?APL/63/2786/1", + doi = "10.1063/1.110334", +} + +@Article{goorsky92, + author = "M. S. Goorsky and S. S. Iyer and K. Eberl and F. + Legoues and J. Angilello and F. Cardone", + collaboration = "", + title = "Thermal stability of Si[sub 1 - x]{C}[sub x]/Si + strained layer superlattices", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "22", + pages = "2758--2760", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + MOLECULAR BEAM EPITAXY; SUPERLATTICES; ANNEALING; + CHEMICAL COMPOSITION; INTERNAL STRAINS; STRESS + RELAXATION; THERMAL INSTABILITIES; INTERFACE STRUCTURE; + DIFFUSION; PRECIPITATION; TEMPERATURE EFFECTS", + URL = "http://link.aip.org/link/?APL/60/2758/1", + doi = "10.1063/1.106868", +} + +@Article{strane94, + author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. + Picraux and J. K. Watanabe and J. W. Mayer", + collaboration = "", + title = "Precipitation and relaxation in strained Si[sub 1 - + y]{C}[sub y]/Si heterostructures", + publisher = "AIP", + year = "1994", + journal = "J. Appl. Phys.", + volume = "76", + number = "6", + pages = "3656--3668", + keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS", + URL = "http://link.aip.org/link/?JAP/76/3656/1", + doi = "10.1063/1.357429", + notes = "strained si-c to 3c-sic, carbon nucleation + refs, + precipitation by substitutional carbon, coherent prec, + coherent to incoherent transition strain vs interface + energy", +} + +@Article{fischer95, + author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J. + Osten", + collaboration = "", + title = "Investigation of the high temperature behavior of + strained Si[sub 1 - y]{C}[sub y] /Si heterostructures", + publisher = "AIP", + year = "1995", + journal = "J. Appl. Phys.", + volume = "77", + number = "5", + pages = "1934--1937", + keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS; + XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE + PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION; + TEMPERATURE RANGE 04001000 K", + URL = "http://link.aip.org/link/?JAP/77/1934/1", + doi = "10.1063/1.358826", +} + +@Article{edgar92, + title = "Prospects for device implementation of wide band gap semiconductors", author = "J. H. Edgar", journal = "J. Mater. Res.", @@ -735,12 +1409,142 @@ NETHERLANDS", } +@Article{zirkelbach09, + title = "Molecular dynamics simulation of defect formation and + precipitation in heavily carbon doped silicon", + journal = "Mater. Sci. Eng., B", + volume = "159-160", + number = "", + pages = "149--152", + year = "2009", + note = "EMRS 2008 Spring Conference Symposium K: Advanced + Silicon Materials Research for Electronic and + Photovoltaic Applications", + ISSN = "0921-5107", + doi = "DOI: 10.1016/j.mseb.2008.10.010", + URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39", + author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and + B. Stritzker", + keywords = "Silicon", + keywords = "Carbon", + keywords = "Silicon carbide", + keywords = "Nucleation", + keywords = "Defect formation", + keywords = "Molecular dynamics simulations", +} + +@Article{zirkelbach10, + title = "Defects in carbon implanted silicon calculated by + classical potentials and first-principles methods", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", + journal = "Phys. Rev. B", + volume = "82", + number = "9", + pages = "094110", + numpages = "6", + year = "2010", + month = sep, + doi = "10.1103/PhysRevB.82.094110", + publisher = "American Physical Society", +} + +@Article{zirkelbach11a, + title = "First principles study of defects in carbon implanted + silicon", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2011", + author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner + and W. G. Schmidt and E. Rauls", +} + +@Article{zirkelbach11b, + title = "...", + journal = "to be published", + volume = "", + number = "", + pages = "", + year = "2011", + author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. + K. N. Lindner and W. G. Schmidt and E. Rauls", +} + +@Article{lindner95, + author = "J. K. N. Lindner and A. Frohnwieser and B. + Rauschenbach and B. Stritzker", + title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} + Layers in Silicon", + journal = "MRS Online Proceedings Library", + volume = "354", + number = "", + pages = "171", + year = "1994", + doi = "10.1557/PROC-354-171", + URL = "http://dx.doi.org/10.1557/PROC-354-171", + eprint = "http://journals.cambridge.org/article_S1946427400420853", + notes = "first time ibs at moderate temperatures", +} + +@Article{lindner96, + title = "Formation of buried epitaxial silicon carbide layers + in silicon by ion beam synthesis", + journal = "Materials Chemistry and Physics", + volume = "46", + number = "2-3", + pages = "147--155", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/S0254-0584(97)80008-9", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7", + author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B. + Götz and A. Frohnwieser and B. Rauschenbach and B. + Stritzker", + notes = "dose window", +} + +@Article{calcagno96, + title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by + ion implantation", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "120", + number = "1-4", + pages = "121--124", + year = "1996", + note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on + New Trends in Ion Beam Processing of Materials", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(96)00492-2", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d", + author = "L. Calcagno and G. Compagnini and G. Foti and M. G. + Grimaldi and P. Musumeci", + notes = "dose window, graphitic bonds", +} + +@Article{lindner98, + title = "Mechanisms of Si{C} Formation in the Ion Beam + Synthesis of 3{C}-Si{C} Layers in Silicon", + journal = "Materials Science Forum", + volume = "264-268", + pages = "215--218", + year = "1998", + note = "", + doi = "10.4028/www.scientific.net/MSF.264-268.215", + URL = "http://www.scientific.net/MSF.264-268.215", + author = "J. K. N. Lindner and W. Reiber and B. Stritzker", + notes = "intermediate temperature for sharp interface + good + crystallinity", +} + @Article{lindner99, title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "147", number = "1-4", pages = "249--255", @@ -756,24 +1560,22 @@ @Article{lindner99_2, title = "Mechanisms in the ion beam synthesis of Si{C} layers in silicon", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "148", number = "1-4", pages = "528--533", year = "1999", - note = "", ISSN = "0168-583X", doi = "DOI: 10.1016/S0168-583X(98)00787-3", URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", author = "J. K. N. Lindner and B. Stritzker", + notes = "3c-sic precipitation model, c-si dimers (dumbbells)", } @Article{lindner01, title = "Ion beam synthesis of buried Si{C} layers in silicon: Basic physical processes", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "178", number = "1-4", pages = "44--54", @@ -782,7 +1584,7 @@ ISSN = "0168-583X", doi = "DOI: 10.1016/S0168-583X(01)00504-3", URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3", - author = "Jörg K. N. Lindner", + author = "J{\"{o}}rg K. N. Lindner", } @Article{lindner02, @@ -797,12 +1599,100 @@ notes = "ibs, burried sic layers", } +@Article{lindner06, + title = "On the balance between ion beam induced nanoparticle + formation and displacive precipitate resolution in the + {C}-Si system", + journal = "Mater. Sci. Eng., C", + volume = "26", + number = "5-7", + pages = "857--861", + year = "2006", + note = "Current Trends in Nanoscience - from Materials to + Applications", + ISSN = "0928-4931", + doi = "DOI: 10.1016/j.msec.2005.09.099", + URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a", + author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth + and B. Stritzker", + notes = "c int diffusion barrier", +} + +@Article{ito04, + title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its + application in buffer layer for Ga{N} epitaxial + growth", + journal = "Applied Surface Science", + volume = "238", + number = "1-4", + pages = "159--164", + year = "2004", + note = "APHYS'03 Special Issue", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2004.05.199", + URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c", + author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase + and S. Nishio and K. Yasuda and Y. Ishigami", + notes = "gan on 3c-sic, focus on ibs of 3c-sic", +} + +@Article{yamamoto04, + title = "Organometallic vapor phase epitaxial growth of Ga{N} + on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion + implantation into Si(1 1 1) substrate", + journal = "J. Cryst. Growth", + volume = "261", + number = "2-3", + pages = "266--270", + year = "2004", + note = "Proceedings of the 11th Biennial (US) Workshop on + Organometallic Vapor Phase Epitaxy (OMVPE)", + ISSN = "0022-0248", + doi = "DOI: 10.1016/j.jcrysgro.2003.11.041", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166", + author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M. + Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito", + notes = "gan on 3c-sic", +} + +@Article{liu_l02, + title = "Substrates for gallium nitride epitaxy", + journal = "Materials Science and Engineering: R: Reports", + volume = "37", + number = "3", + pages = "61--127", + year = "2002", + note = "", + ISSN = "0927-796X", + doi = "DOI: 10.1016/S0927-796X(02)00008-6", + URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401", + author = "L. Liu and J. H. Edgar", + notes = "gan substrates", +} + +@Article{takeuchi91, + title = "Growth of single crystalline Ga{N} film on Si + substrate using 3{C}-Si{C} as an intermediate layer", + journal = "J. Cryst. Growth", + volume = "115", + number = "1-4", + pages = "634--638", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90817-O", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140", + author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa + Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki", + notes = "gan on 3c-sic (first time?)", +} + @Article{alder57, author = "B. J. Alder and T. E. Wainwright", title = "Phase Transition for a Hard Sphere System", publisher = "AIP", year = "1957", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "27", number = "5", pages = "1208--1209", @@ -815,7 +1705,7 @@ title = "Studies in Molecular Dynamics. {I}. General Method", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "31", number = "2", pages = "459--466", @@ -823,6 +1713,36 @@ doi = "10.1063/1.1730376", } +@Article{horsfield96, + title = "Bond-order potentials: Theory and implementation", + author = "A. P. Horsfield and A. M. Bratkovsky and M. Fearn and + D. G. Pettifor and M. Aoki", + journal = "Phys. Rev. B", + volume = "53", + number = "19", + pages = "12694--12712", + numpages = "18", + year = "1996", + month = may, + doi = "10.1103/PhysRevB.53.12694", + publisher = "American Physical Society", +} + +@Article{abell85, + title = "Empirical chemical pseudopotential theory of molecular + and metallic bonding", + author = "G. C. Abell", + journal = "Phys. Rev. B", + volume = "31", + number = "10", + pages = "6184--6196", + numpages = "12", + year = "1985", + month = may, + doi = "10.1103/PhysRevB.31.6184", + publisher = "American Physical Society", +} + @Article{tersoff_si1, title = "New empirical model for the structural properties of silicon", @@ -838,6 +1758,21 @@ publisher = "American Physical Society", } +@Article{dodson87, + title = "Development of a many-body Tersoff-type potential for + silicon", + author = "Brian W. Dodson", + journal = "Phys. Rev. B", + volume = "35", + number = "6", + pages = "2795--2798", + numpages = "3", + year = "1987", + month = feb, + doi = "10.1103/PhysRevB.35.2795", + publisher = "American Physical Society", +} + @Article{tersoff_si2, title = "New empirical approach for the structure and energy of covalent systems", @@ -928,8 +1863,7 @@ @Article{wesch96, title = "Silicon carbide: synthesis and processing", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "116", number = "1-4", pages = "305--321", @@ -941,6 +1875,33 @@ author = "W. Wesch", } +@Article{davis91, + author = "R. F. Davis and G. Kelner and M. Shur and J. W. + Palmour and J. A. Edmond", + journal = "Proceedings of the IEEE", + title = "Thin film deposition and microelectronic and + optoelectronic device fabrication and characterization + in monocrystalline alpha and beta silicon carbide", + year = "1991", + month = may, + volume = "79", + number = "5", + pages = "677--701", + keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky + diode;SiC;dry etching;electrical + contacts;etching;impurity incorporation;optoelectronic + device fabrication;solid-state devices;surface + chemistry;Schottky effect;Schottky gate field effect + transistors;Schottky-barrier + diodes;etching;heterojunction bipolar + transistors;insulated gate field effect + transistors;light emitting diodes;semiconductor + materials;semiconductor thin films;silicon compounds;", + doi = "10.1109/5.90132", + ISSN = "0018-9219", + notes = "sic growth methods", +} + @Article{morkoc94, author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E. Lin and B. Sverdlov and M. Burns", @@ -949,7 +1910,7 @@ ZnSe-based semiconductor device technologies", publisher = "AIP", year = "1994", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "76", number = "3", pages = "1363--1398", @@ -959,6 +1920,7 @@ FILMS; INDUSTRY", URL = "http://link.aip.org/link/?JAP/76/1363/1", doi = "10.1063/1.358463", + notes = "sic intro, properties", } @Article{foo, @@ -1016,6 +1978,7 @@ doi = "DOI: 10.1016/0038-1101(96)00045-7", URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b", author = "J. B. Casady and R. W. Johnson", + notes = "sic intro", } @Article{giancarli98, @@ -1049,18 +2012,81 @@ @Article{tairov78, title = "Investigation of growth processes of ingots of silicon carbide single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "43", number = "2", pages = "209--212", year = "1978", - notes = "modifief lely process", + notes = "modified lely process", ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(78)90169-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc", author = "Yu. M. Tairov and V. F. Tsvetkov", } +@Article{tairov81, + title = "General principles of growing large-size single + crystals of various silicon carbide polytypes", + journal = "J. Cryst. Growth", + volume = "52", + number = "Part 1", + pages = "146--150", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90184-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529", + author = "Yu.M. Tairov and V. F. Tsvetkov", +} + +@Article{barrett91, + title = "Si{C} boule growth by sublimation vapor transport", + journal = "J. Cryst. Growth", + volume = "109", + number = "1-4", + pages = "17--23", + year = "1991", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(91)90152-U", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1", + author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and + R. H. Hopkins and W. J. Choyke", +} + +@Article{barrett93, + title = "Growth of large Si{C} single crystals", + journal = "J. Cryst. Growth", + volume = "128", + number = "1-4", + pages = "358--362", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90348-Z", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c", + author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and + R. H. Hopkins and P. G. McMullin and R. C. Clarke and + W. J. Choyke", +} + +@Article{stein93, + title = "Control of polytype formation by surface energy + effects during the growth of Si{C} monocrystals by the + sublimation method", + journal = "J. Cryst. Growth", + volume = "131", + number = "1-2", + pages = "71--74", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90397-F", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d", + author = "R. A. Stein and P. Lanig", + notes = "6h and 4h, sublimation technique", +} + @Article{nishino83, author = "Shigehiro Nishino and J. Anthony Powell and Herbert A. Will", @@ -1069,7 +2095,7 @@ cubic Si{C} for semiconductor devices", publisher = "AIP", year = "1983", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "42", number = "5", pages = "460--462", @@ -1080,7 +2106,7 @@ notes = "cvd of 3c-sic on si, sic buffer layer", } -@Article{nishino:4889, +@Article{nishino87, author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono and Hiroyuki Matsunami", collaboration = "", @@ -1088,7 +2114,7 @@ Si{C} on silicon", publisher = "AIP", year = "1987", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "61", number = "10", pages = "4889--4893", @@ -1105,7 +2131,7 @@ Single-Crystal Films on Si", publisher = "ECS", year = "1987", - journal = "Journal of The Electrochemical Society", + journal = "J. Electrochem. Soc.", volume = "134", number = "6", pages = "1558--1565", @@ -1116,6 +2142,44 @@ notes = "blue light emitting diodes (led)", } +@Article{powell87_2, + author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and + C. M. Chorey and T. T. Cheng and P. Pirouz", + collaboration = "", + title = "Improved beta-Si{C} heteroepitaxial films using + off-axis Si substrates", + publisher = "AIP", + year = "1987", + journal = "Appl. Phys. Lett.", + volume = "51", + number = "11", + pages = "823--825", + keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED + COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE + STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING + FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES; + OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS", + URL = "http://link.aip.org/link/?APL/51/823/1", + doi = "10.1063/1.98824", + notes = "improved sic on off-axis si substrates, reduced apbs", +} + +@Article{ueda90, + title = "Crystal growth of Si{C} by step-controlled epitaxy", + journal = "J. Cryst. Growth", + volume = "104", + number = "3", + pages = "695--700", + year = "1990", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(90)90013-B", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9", + author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki + Matsunami", + notes = "step-controlled epitaxy model", +} + @Article{kimoto93, author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo and Hiroyuki Matsunami", @@ -1123,7 +2187,7 @@ epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "73", number = "2", pages = "726--732", @@ -1135,6 +2199,49 @@ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic", } +@Article{powell90_2, + author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. + J. Choyke and J. L. Bradshaw and L. Henderson and M. + Yoganathan and J. Yang and P. Pirouz", + collaboration = "", + title = "Growth of high quality 6{H}-Si{C} epitaxial films on + vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1990", + journal = "Appl. Phys. Lett.", + volume = "56", + number = "15", + pages = "1442--1444", + keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE + PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY; + TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS; + DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY", + URL = "http://link.aip.org/link/?APL/56/1442/1", + doi = "10.1063/1.102492", + notes = "cvd of 6h-sic on 6h-sic", +} + +@Article{kong88_2, + author = "H. S. Kong and J. T. Glass and R. F. Davis", + collaboration = "", + title = "Chemical vapor deposition and characterization of + 6{H}-Si{C} thin films on off-axis 6{H}-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "J. Appl. Phys.", + volume = "64", + number = "5", + pages = "2672--2679", + keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED + COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON + MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL + STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR + PHASE EPITAXY; CRYSTAL ORIENTATION", + URL = "http://link.aip.org/link/?JAP/64/2672/1", + doi = "10.1063/1.341608", +} + @Article{powell90, author = "J. A. Powell and D. J. Larkin and L. G. Matus and W. J. Choyke and J. L. Bradshaw and L. Henderson and M. @@ -1144,7 +2251,7 @@ 6{H}-Si{C} substrates", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "14", pages = "1353--1355", @@ -1157,6 +2264,48 @@ notes = "cvd of 3c-sic on 6h-sic", } +@Article{kong88, + author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A. + Rozgonyi and K. L. More", + collaboration = "", + title = "An examination of double positioning boundaries and + interface misfit in beta-Si{C} films on alpha-Si{C} + substrates", + publisher = "AIP", + year = "1988", + journal = "J. Appl. Phys.", + volume = "63", + number = "8", + pages = "2645--2650", + keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING + FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN + FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION; + MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE + STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS", + URL = "http://link.aip.org/link/?JAP/63/2645/1", + doi = "10.1063/1.341004", +} + +@Article{powell91, + author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G. + Jenkins and L. G. Matus and J. W. Yang and P. Pirouz + and W. J. Choyke and L. Clemen and M. Yoganathan", + collaboration = "", + title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films + on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", + publisher = "AIP", + year = "1991", + journal = "Appl. Phys. Lett.", + volume = "59", + number = "3", + pages = "333--335", + keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE + PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL + MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE", + URL = "http://link.aip.org/link/?APL/59/333/1", + doi = "10.1063/1.105587", +} + @Article{yuan95, author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R. Thokala and M. J. Loboda", @@ -1166,7 +2315,7 @@ silacyclobutane", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "2", pages = "1271--1273", @@ -1178,48 +2327,202 @@ notes = "3c-sic on 6h-sic, cvd, reduced temperature", } +@Article{kaneda87, + title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric + properties of its p-n junction", + journal = "J. Cryst. Growth", + volume = "81", + number = "1-4", + pages = "536--542", + year = "1987", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(87)90449-0", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1", + author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara + and Takao Tanaka", + notes = "first time ssmbe of 3c-sic on 6h-sic", +} + @Article{fissel95, title = "Epitaxial growth of Si{C} thin films on Si-stabilized [alpha]-Si{C}(0001) at low temperatures by solid-source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "154", number = "1-2", pages = "72--80", year = "1995", - notes = "solid source mbe", ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(95)00170-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", - author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter - and W. Richter", + author = "A. Fissel and U. Kaiser and E. Ducke and B. + Schr{\"{o}}ter and W. Richter", + notes = "solid source mbe of 3c-sic on si and 6h-sic", } -@Article{borders71, - author = "J. A. Borders and S. T. Picraux and W. Beezhold", +@Article{fissel95_apl, + author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter", collaboration = "", - title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION} - {IMPLANTATION}", + title = "Low-temperature growth of Si{C} thin films on Si and + 6{H}--Si{C} by solid-source molecular beam epitaxy", publisher = "AIP", - year = "1971", - journal = "Applied Physics Letters", - volume = "18", - number = "11", - pages = "509--511", - URL = "http://link.aip.org/link/?APL/18/509/1", - notes = "first time sic by ibs", - doi = "10.1063/1.1653516", + year = "1995", + journal = "Appl. Phys. Lett.", + volume = "66", + number = "23", + pages = "3182--3184", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; + RHEED; NUCLEATION", + URL = "http://link.aip.org/link/?APL/66/3182/1", + doi = "10.1063/1.113716", + notes = "mbe 3c-sic on si and 6h-sic", } -@Article{reeson87, - author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and - J. Davis and G. E. Celler", +@Article{fissel96, + author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and + Bernd Schr{\"{o}}ter and Wolfgang Richter", collaboration = "", - title = "Formation of buried layers of beta-Si{C} using ion + title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by + migration enhanced epitaxy controlled to an atomic + level using surface superstructures", + publisher = "AIP", + year = "1996", + journal = "Appl. Phys. Lett.", + volume = "68", + number = "9", + pages = "1204--1206", + keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; + NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION; + SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?APL/68/1204/1", + doi = "10.1063/1.115969", + notes = "ss mbe sic, superstructure, reconstruction", +} + +@Article{righi03, + title = "Ab initio Simulations of Homoepitaxial Si{C} Growth", + author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and + C. M. Bertoni and A. Catellani", + journal = "Phys. Rev. Lett.", + volume = "91", + number = "13", + pages = "136101", + numpages = "4", + year = "2003", + month = sep, + doi = "10.1103/PhysRevLett.91.136101", + publisher = "American Physical Society", + notes = "dft calculations mbe sic growth", +} + +@Article{borders71, + author = "J. A. Borders and S. T. Picraux and W. Beezhold", + collaboration = "", + title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION} + {IMPLANTATION}", + publisher = "AIP", + year = "1971", + journal = "Appl. Phys. Lett.", + volume = "18", + number = "11", + pages = "509--511", + URL = "http://link.aip.org/link/?APL/18/509/1", + doi = "10.1063/1.1653516", + notes = "first time sic by ibs, follow cites for precipitation + ideas", +} + +@Article{edelman76, + author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko + and E. V. Lubopytova", + title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon + by ion implantation", + publisher = "Taylor \& Francis", + year = "1976", + journal = "Radiation Effects", + volume = "29", + number = "1", + pages = "13--15", + URL = "http://www.informaworld.com/10.1080/00337577608233477", + notes = "3c-sic for different temperatures, amorphous, poly, + single crystalline", +} + +@Article{akimchenko80, + author = "I. P. Akimchenko and K. V. Kisseleva and V. V. + Krasnopevtsev and A. G. Touryanski and V. S. Vavilov", + title = "Structure and optical properties of silicon implanted + by high doses of 70 and 310 ke{V} carbon ions", + publisher = "Taylor \& Francis", + year = "1980", + journal = "Radiation Effects", + volume = "48", + number = "1", + pages = "7", + URL = "http://www.informaworld.com/10.1080/00337578008209220", + notes = "3c-sic nucleation by thermal spikes", +} + +@Article{kimura81, + title = "Structure and annealing properties of silicon carbide + thin layers formed by implantation of carbon ions in + silicon", + journal = "Thin Solid Films", + volume = "81", + number = "4", + pages = "319--327", + year = "1981", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(81)90516-2", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80", + author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi + Yugo", +} + +@Article{kimura82, + title = "Characteristics of the synthesis of [beta]-Si{C} by + the implantation of carbon ions into silicon", + journal = "Thin Solid Films", + volume = "94", + number = "3", + pages = "191--198", + year = "1982", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(82)90295-4", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd", + author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi + Yugo", +} + +@Article{reeson86, + author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and + C. D. Meekison and C. Marsh and G. R. Booker and R. J. + Chater and J. A. Iulner and J. Davis", + title = "Formation mechanisms and structures of insulating + compounds formed in silicon by ion beam synthesis", + publisher = "Taylor \& Francis", + year = "1986", + journal = "Radiation Effects", + volume = "99", + number = "1", + pages = "71--81", + URL = "http://www.informaworld.com/10.1080/00337578608209614", + notes = "ibs, comparison with sio and sin, higher temp or time, + no c redistribution", +} + +@Article{reeson87, + author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and + J. Davis and G. E. Celler", + collaboration = "", + title = "Formation of buried layers of beta-Si{C} using ion beam synthesis and incoherent lamp annealing", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "26", pages = "2242--2244", @@ -1230,19 +2533,104 @@ notes = "nice tem images, sic by ibs", } +@Article{martin90, + author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff + and M. Olivier and A. M. Papon and G. Rolland", + collaboration = "", + title = "High-temperature ion beam synthesis of cubic Si{C}", + publisher = "AIP", + year = "1990", + journal = "J. Appl. Phys.", + volume = "67", + number = "6", + pages = "2908--2912", + keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION + IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS; + TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION; + INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER + ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR + REACTIONS; MONOCRYSTALS", + URL = "http://link.aip.org/link/?JAP/67/2908/1", + doi = "10.1063/1.346092", + notes = "triple energy implantation to overcome high annealing + temepratures", +} + @Article{scace59, author = "R. I. Scace and G. A. Slack", collaboration = "", title = "Solubility of Carbon in Silicon and Germanium", publisher = "AIP", year = "1959", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "30", number = "6", pages = "1551--1555", URL = "http://link.aip.org/link/?JCP/30/1551/1", doi = "10.1063/1.1730236", - notes = "solubility of c in c-si", + notes = "solubility of c in c-si, si-c phase diagram", +} + +@Article{hofker74, + author = "W. Hofker and H. Werner and D. Oosthoek and N. + Koeman", + affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research + Laboratories Eindhoven Netherlands Eindhoven + Netherlands", + title = "Boron implantations in silicon: {A} comparison of + charge carrier and boron concentration profiles", + journal = "Applied Physics A: Materials Science \& Processing", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0947-8396", + keyword = "Physics and Astronomy", + pages = "125--133", + volume = "4", + issue = "2", + URL = "http://dx.doi.org/10.1007/BF00884267", + note = "10.1007/BF00884267", + year = "1974", + notes = "first time ted (only for boron?)", +} + +@Article{michel87, + author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R. + H. Kastl", + collaboration = "", + title = "Rapid annealing and the anomalous diffusion of ion + implanted boron into silicon", + publisher = "AIP", + year = "1987", + journal = "Appl. Phys. Lett.", + volume = "50", + number = "7", + pages = "416--418", + keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION; + BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY + HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY", + URL = "http://link.aip.org/link/?APL/50/416/1", + doi = "10.1063/1.98160", + notes = "ted of boron in si", +} + +@Article{cowern90, + author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F. + Jos", + collaboration = "", + title = "Transient diffusion of ion-implanted {B} in Si: Dose, + time, and matrix dependence of atomic and electrical + profiles", + publisher = "AIP", + year = "1990", + journal = "J. Appl. Phys.", + volume = "68", + number = "12", + pages = "6191--6198", + keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME + DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS; + CRYSTALS; AMORPHIZATION", + URL = "http://link.aip.org/link/?JAP/68/6191/1", + doi = "10.1063/1.346910", + notes = "ted of boron in si", } @Article{cowern96, @@ -1253,7 +2641,7 @@ {B} in silicon", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "8", pages = "1150--1152", @@ -1268,8 +2656,7 @@ @Article{stolk95, title = "Implantation and transient boron diffusion: the role of the silicon self-interstitial", - journal = "Nuclear Instruments and Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms", + journal = "Nucl. Instrum. Methods Phys. Res. B", volume = "96", number = "1-2", pages = "187--195", @@ -1293,7 +2680,7 @@ diffusion in ion-implanted silicon", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "81", number = "9", pages = "6031--6050", @@ -1309,7 +2696,7 @@ of Si[sub 1 - y]{C}[sub y] random alloy layers", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "64", number = "3", pages = "324--326", @@ -1329,7 +2716,7 @@ - x - y]Ge[sub x]{C}[sub y]", publisher = "AIP", year = "1991", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "70", number = "4", pages = "2470--2472", @@ -1354,6 +2741,136 @@ quasi-direct one", } +@Article{eberl92, + author = "K. Eberl and S. S. Iyer and S. Zollner and J. C. Tsang + and F. K. LeGoues", + collaboration = "", + title = "Growth and strain compensation effects in the ternary + Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "24", + pages = "3033--3035", + keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; CARBON ALLOYS; + TERNARY ALLOYS; SEMICONDUCTOR ALLOYS; MOLECULAR BEAM + EPITAXY; INTERNAL STRAINS; TEMPERATURE EFFECTS; CRYSTAL + STRUCTURE; LATTICE PARAMETERS; XRAY DIFFRACTION; PHASE + STUDIES", + URL = "http://link.aip.org/link/?APL/60/3033/1", + doi = "10.1063/1.106774", +} + +@Article{powell93, + author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A. + Ek and S. S. Iyer", + collaboration = "", + title = "Stability of strained Si[sub 1 - y]{C}[sub y] random + alloy layers", + publisher = "AVS", + year = "1993", + journal = "J. Vac. Sci. Technol. B", + volume = "11", + number = "3", + pages = "1064--1068", + location = "Ottawa (Canada)", + keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS; + METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR + BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA; + TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS", + URL = "http://link.aip.org/link/?JVB/11/1064/1", + doi = "10.1116/1.587008", + notes = "substitutional c in si by mbe", +} + +@Article{powell93_2, + title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties + of the ternary system", + journal = "J. Cryst. Growth", + volume = "127", + number = "1-4", + pages = "425--429", + year = "1993", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(93)90653-E", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46J3RF2-8H/2/27fc231f28e4dc0a3b4770e5cf03257e", + author = "A. R. Powell and K. Eberl and B. A. Ek and S. S. + Iyer", +} + +@Article{osten94, + author = "H. J. Osten", + title = "Modification of Growth Modes in Lattice-Mismatched + Epitaxial Systems: Si/Ge", + journal = "phys. status solidi (a)", + volume = "145", + number = "2", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-396X", + URL = "http://dx.doi.org/10.1002/pssa.2211450203", + doi = "10.1002/pssa.2211450203", + pages = "235--245", + year = "1994", +} + +@Article{dietrich94, + title = "Lattice distortion in a strain-compensated + $Si_{1-x-y}$$Ge_{x}$${C}_{y}$ layer on silicon", + author = "B. Dietrich and H. J. Osten and H. R{\"u}cker and M. + Methfessel and P. Zaumseil", + journal = "Phys. Rev. B", + volume = "49", + number = "24", + pages = "17185--17190", + numpages = "5", + year = "1994", + month = jun, + doi = "10.1103/PhysRevB.49.17185", + publisher = "American Physical Society", +} + +@Article{osten94_2, + author = "H. J. Osten and E. Bugiel and P. Zaumseil", + collaboration = "", + title = "Growth of an inverse tetragonal distorted SiGe layer + on Si(001) by adding small amounts of carbon", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "64", + number = "25", + pages = "3440--3442", + keywords = "SILICON ALLOYS; GERMANIUM ALLOYS; FILM GROWTH; CARBON + ALLOYS; TERNARY ALLOYS; MOLECULAR BEAM EPITAXY; TEM; + XRD; LATTICE PARAMETERS; EPITAXIAL LAYERS; TETRAGONAL + LATTICES", + URL = "http://link.aip.org/link/?APL/64/3440/1", + doi = "10.1063/1.111235", + notes = "inversely strained / distorted heterostructure", +} + +@Article{iyer92, + author = "S. S. Iyer and K. Eberl and M. S. Goorsky and F. K. + LeGoues and J. C. Tsang and F. Cardone", + collaboration = "", + title = "Synthesis of Si[sub 1 - y]{C}[sub y] alloys by + molecular beam epitaxy", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "3", + pages = "356--358", + keywords = "SILICON ALLOYS; CARBON ALLOYS; BINARY ALLOYS; + SEMICONDUCTOR ALLOYS; SUPERLATTICES; MOLECULAR BEAM + EPITAXY; CHEMICAL COMPOSITION; TEMPERATURE EFFECTS; + FILM GROWTH; MICROSTRUCTURE", + URL = "http://link.aip.org/link/?APL/60/356/1", + doi = "10.1063/1.106655", +} + @Article{osten99, author = "H. J. Osten and J. Griesche and S. Scalese", collaboration = "", @@ -1362,7 +2879,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1999", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "74", number = "6", pages = "836--838", @@ -1371,7 +2888,21 @@ compounds", URL = "http://link.aip.org/link/?APL/74/836/1", doi = "10.1063/1.123384", - notes = "substitutional c in si", + notes = "substitutional c in si by mbe", +} + +@Article{born27, + author = "M. Born and R. Oppenheimer", + title = "Zur Quantentheorie der Molekeln", + journal = "Annalen der Physik", + volume = "389", + number = "20", + publisher = "WILEY-VCH Verlag", + ISSN = "1521-3889", + URL = "http://dx.doi.org/10.1002/andp.19273892002", + doi = "10.1002/andp.19273892002", + pages = "457--484", + year = "1927", } @Article{hohenberg64, @@ -1389,6 +2920,53 @@ notes = "density functional theory, dft", } +@Article{thomas27, + title = "The calculation of atomic fields", + author = "L. H. Thomas", + journal = "Mathematical Proceedings of the Cambridge + Philosophical Society", + volume = "23", + pages = "542--548", + year = "1927", + doi = "10.1017/S0305004100011683", +} + +@Article{fermi27, + title = "", + author = "E. Fermi", + journal = "Atti Accad. Naz. Lincei, Cl. Sci. Fis. Mat. Nat. + Rend.", + volume = "6", + pages = "602", + year = "1927", +} + +@Article{hartree28, + title = "The Wave Mechanics of an Atom with a Non-Coulomb + Central Field. Part {I}. Theory and Methods", + author = "D. R. Hartree", + journal = "Mathematical Proceedings of the Cambridge + Philosophical Society", + volume = "24", + pages = "89--110", + year = "1928", + doi = "10.1017/S0305004100011919", +} + +@Article{slater29, + title = "The Theory of Complex Spectra", + author = "J. C. Slater", + journal = "Phys. Rev.", + volume = "34", + number = "10", + pages = "1293--1322", + numpages = "29", + year = "1929", + month = nov, + doi = "10.1103/PhysRev.34.1293", + publisher = "American Physical Society", +} + @Article{kohn65, title = "Self-Consistent Equations Including Exchange and Correlation Effects", @@ -1405,6 +2983,81 @@ notes = "dft, exchange and correlation", } +@Article{kohn96, + title = "Density Functional and Density Matrix Method Scaling + Linearly with the Number of Atoms", + author = "W. Kohn", + journal = "Phys. Rev. Lett.", + volume = "76", + number = "17", + pages = "3168--3171", + numpages = "3", + year = "1996", + month = apr, + doi = "10.1103/PhysRevLett.76.3168", + publisher = "American Physical Society", +} + +@Article{kohn98, + title = "Edge Electron Gas", + author = "Walter Kohn and Ann E. Mattsson", + journal = "Phys. Rev. Lett.", + volume = "81", + number = "16", + pages = "3487--3490", + numpages = "3", + year = "1998", + month = oct, + doi = "10.1103/PhysRevLett.81.3487", + publisher = "American Physical Society", +} + +@Article{kohn99, + title = "Nobel Lecture: Electronic structure of matter---wave + functions and density functionals", + author = "W. Kohn", + journal = "Rev. Mod. Phys.", + volume = "71", + number = "5", + pages = "1253--1266", + numpages = "13", + year = "1999", + month = oct, + doi = "10.1103/RevModPhys.71.1253", + publisher = "American Physical Society", +} + +@Article{payne92, + title = "Iterative minimization techniques for ab initio + total-energy calculations: molecular dynamics and + conjugate gradients", + author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A. + Arias and J. D. Joannopoulos", + journal = "Rev. Mod. Phys.", + volume = "64", + number = "4", + pages = "1045--1097", + numpages = "52", + year = "1992", + month = oct, + doi = "10.1103/RevModPhys.64.1045", + publisher = "American Physical Society", +} + +@Article{levy82, + title = "Electron densities in search of Hamiltonians", + author = "Mel Levy", + journal = "Phys. Rev. A", + volume = "26", + number = "3", + pages = "1200--1208", + numpages = "8", + year = "1982", + month = sep, + doi = "10.1103/PhysRevA.26.1200", + publisher = "American Physical Society", +} + @Article{ruecker94, title = "Strain-stabilized highly concentrated pseudomorphic $Si1-x$$Cx$ layers in Si", @@ -1419,15 +3072,33 @@ month = may, doi = "10.1103/PhysRevLett.72.3578", publisher = "American Physical Society", - notes = "high c concentration in si, heterostructure, starined + notes = "high c concentration in si, heterostructure, strained si, dft", } +@Article{yagi02, + title = "Phosphorous Doping of Strain-Induced + Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\ + by Low-Temperature Chemical Vapor Deposition", + author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and + Yuichi Yoneyama and Akira Yamada and Makoto Konagai", + journal = "Japanese J. Appl. Phys.", + volume = "41", + number = "Part 1, No. 4B", + pages = "2472--2475", + numpages = "3", + year = "2002", + URL = "http://jjap.jsap.jp/link?JJAP/41/2472/", + doi = "10.1143/JJAP.41.2472", + publisher = "The Japan Society of Applied Physics", + notes = "experimental charge carrier mobility in strained si", +} + @Article{chang05, title = "Electron Transport Model for Strained Silicon-Carbon Alloy", author = "Shu-Tong Chang and Chung-Yi Lin", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "44", number = "4B", pages = "2257--2262", @@ -1436,7 +3107,49 @@ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/", doi = "10.1143/JJAP.44.2257", publisher = "The Japan Society of Applied Physics", - notes = "enhance of electron mobility in starined si", + notes = "enhance of electron mobility in strained si", +} + +@Article{kissinger94, + author = "W. Kissinger and M. Weidner and H. J. Osten and M. + Eichler", + collaboration = "", + title = "Optical transitions in strained Si[sub 1 - y]{C}[sub + y] layers on Si(001)", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "65", + number = "26", + pages = "3356--3358", + keywords = "SILICON CARBIDES; INTERNAL STRAINS; EPITAXIAL LAYERS; + CHEMICAL COMPOSITION; ELLIPSOMETRY; REFLECTION + SPECTROSCOPY; ELECTROOPTICAL EFFECTS; BAND STRUCTURE; + ENERGY LEVELS; ENERGYLEVEL TRANSITIONS", + URL = "http://link.aip.org/link/?APL/65/3356/1", + doi = "10.1063/1.112390", + notes = "strained si influence on optical properties", +} + +@Article{osten96, + author = "H. J. Osten and Myeongcheol Kim and K. Pressel and P. + Zaumseil", + collaboration = "", + title = "Substitutional versus interstitial carbon + incorporation during pseudomorphic growth of Si[sub 1 - + y]{C}[sub y] on Si(001)", + publisher = "AIP", + year = "1996", + journal = "J. Appl. Phys.", + volume = "80", + number = "12", + pages = "6711--6715", + keywords = "SILICON CARBIDES; CRYSTAL DEFECTS; FILM GROWTH; + MOLECULAR BEAM EPITAXY; INTERSTITIALS; SUBSTITUTION; + XRD; STRAINS", + URL = "http://link.aip.org/link/?JAP/80/6711/1", + doi = "10.1063/1.363797", + notes = "mbe substitutional vs interstitial c incorporation", } @Article{osten97, @@ -1447,7 +3160,7 @@ Si(001)", publisher = "AIP", year = "1997", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "82", number = "10", pages = "4977--4981", @@ -1501,7 +3214,7 @@ potential energy surfaces", publisher = "AIP", year = "2009", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "130", number = "11", eid = "114711", @@ -1522,7 +3235,7 @@ molecular dynamics method", publisher = "AIP", year = "1981", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "52", number = "12", pages = "7182--7190", @@ -1551,6 +3264,39 @@ publisher = "American Physical Society", } +@Article{brenner90, + title = "Empirical potential for hydrocarbons for use in + simulating the chemical vapor deposition of diamond + films", + author = "Donald W. Brenner", + journal = "Phys. Rev. B", + volume = "42", + number = "15", + pages = "9458--9471", + numpages = "13", + year = "1990", + month = nov, + doi = "10.1103/PhysRevB.42.9458", + publisher = "American Physical Society", + notes = "brenner hydro carbons", +} + +@Article{bazant96, + title = "Modeling of Covalent Bonding in Solids by Inversion of + Cohesive Energy Curves", + author = "Martin Z. Bazant and Efthimios Kaxiras", + journal = "Phys. Rev. Lett.", + volume = "77", + number = "21", + pages = "4370--4373", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4370", + publisher = "American Physical Society", + notes = "first si edip", +} + @Article{bazant97, title = "Environment-dependent interatomic potential for bulk silicon", @@ -1565,13 +3311,14 @@ month = oct, doi = "10.1103/PhysRevB.56.8542", publisher = "American Physical Society", + notes = "second si edip", } @Article{justo98, title = "Interatomic potential for silicon defects and disordered phases", - author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios - Kaxiras and V. V. Bulatov and Sidney Yip", + author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and + Efthimios Kaxiras and V. V. Bulatov and Sidney Yip", journal = "Phys. Rev. B", volume = "58", number = "5", @@ -1581,6 +3328,7 @@ month = aug, doi = "10.1103/PhysRevB.58.2539", publisher = "American Physical Society", + notes = "latest si edip, good dislocation explanation", } @Article{parcas_md, @@ -1612,7 +3360,7 @@ simulation of infrequent events", publisher = "AIP", year = "1997", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "106", number = "11", pages = "4665--4677", @@ -1627,13 +3375,13 @@ } @Article{sorensen2000, - author = "Mads R. S\o rensen and Arthur F. Voter", + author = "Mads R. S{\o }rensen and Arthur F. Voter", collaboration = "", title = "Temperature-accelerated dynamics for simulation of infrequent events", publisher = "AIP", year = "2000", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "112", number = "21", pages = "9599--9606", @@ -1667,7 +3415,7 @@ simulation", publisher = "AIP", year = "1999", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "110", number = "19", pages = "9401--9410", @@ -1686,7 +3434,7 @@ to the production of amorphous silicon", publisher = "AIP", year = "2005", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "122", number = "15", eid = "154509", @@ -1707,7 +3455,7 @@ difficult?", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "62", number = "25", pages = "3336--3338", @@ -1716,12 +3464,14 @@ ENERGY", URL = "http://link.aip.org/link/?APL/62/3336/1", doi = "10.1063/1.109063", - notes = "interfacial energy of cubic sic and si", + notes = "interfacial energy of cubic sic and si, si self + interstitials necessary for precipitation, volume + decrease, high interface energy", } @Article{chaussende08, title = "Prospects for 3{C}-Si{C} bulk crystal growth", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "310", number = "5", pages = "976--981", @@ -1739,6 +3489,19 @@ metastable", } +@Article{chaussende07, + author = "D. Chaussende and P. J. Wellmann and M. Pons", + title = "Status of Si{C} bulk growth processes", + journal = "J. Phys. D", + volume = "40", + number = "20", + pages = "6150", + URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02", + year = "2007", + notes = "review of sic single crystal growth methods, process + modelling", +} + @Article{feynman39, title = "Forces in Molecules", author = "R. P. Feynman", @@ -1789,7 +3552,7 @@ angular distribution, coordination", } -@Article{wen:073522, +@Article{wen09, author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J. W. Liang and J. Zou", collaboration = "", @@ -1798,7 +3561,7 @@ 3{C}-Si{C}/Si (001) interface", publisher = "AIP", year = "2009", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "106", number = "7", eid = "073522", @@ -1810,7 +3573,8 @@ stacking faults; wide band gap semiconductors", URL = "http://link.aip.org/link/?JAP/106/073522/1", doi = "10.1063/1.3234380", - notes = "sic/si interface, follow refs", + notes = "sic/si interface, follow refs, tem image + deconvolution, dislocation defects", } @Article{kitabatake93, @@ -1821,7 +3585,7 @@ growth on Si(001) surface", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "7", pages = "4438--4445", @@ -1834,6 +3598,58 @@ model, interface", } +@Article{kitabatake97, + author = "Makoto Kitabatake", + title = "Simulations and Experiments of 3{C}-Si{C}/Si + Heteroepitaxial Growth", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "phys. status solidi (b)", + volume = "202", + pages = "405--420", + URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", + notes = "3c-sic heteroepitaxial growth on si off-axis model", +} + +@Article{chirita97, + title = "Strain relaxation and thermal stability of the + 3{C}-Si{C}(001)/Si(001) interface: {A} molecular + dynamics study", + journal = "Thin Solid Films", + volume = "294", + number = "1-2", + pages = "47--49", + year = "1997", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/S0040-6090(96)09257-7", + URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4", + author = "V. Chirita and L. Hultman and L. R. Wallenberg", + keywords = "Strain relaxation", + keywords = "Interfaces", + keywords = "Thermal stability", + keywords = "Molecular dynamics", + notes = "tersoff sic/si interface study", +} + +@Article{cicero02, + title = "Ab initio Study of Misfit Dislocations at the + $Si{C}/Si(001)$ Interface", + author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra + Catellani", + journal = "Phys. Rev. Lett.", + volume = "89", + number = "15", + pages = "156101", + numpages = "4", + year = "2002", + month = sep, + doi = "10.1103/PhysRevLett.89.156101", + publisher = "American Physical Society", + notes = "sic/si interface study", +} + @Article{pizzagalli03, title = "Theoretical investigations of a highly mismatched interface: Si{C}/Si(001)", @@ -1850,3 +3666,1364 @@ publisher = "American Physical Society", notes = "tersoff md and ab initio sic/si interface study", } + +@Article{tang07, + title = "Atomic configurations of dislocation core and twin + boundaries in $ 3{C}-Si{C} $ studied by high-resolution + electron microscopy", + author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X. + H. Zheng and J. W. Liang", + journal = "Phys. Rev. B", + volume = "75", + number = "18", + pages = "184103", + numpages = "7", + year = "2007", + month = may, + doi = "10.1103/PhysRevB.75.184103", + publisher = "American Physical Society", + notes = "hrem image deconvolution on 3c-sic on si, distinguish + si and c", +} + +@Article{hornstra58, + title = "Dislocations in the diamond lattice", + journal = "J. Phys. Chem. Solids", + volume = "5", + number = "1-2", + pages = "129--141", + year = "1958", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(58)90138-0", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5", + author = "J. Hornstra", + notes = "dislocations in diamond lattice", +} + +@Article{deguchi92, + title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon + Ion `Hot' Implantation", + author = "Masahiro Deguchi and Makoto Kitabatake and Takashi + Hirao and Naoki Arai and Tomio Izumi", + journal = "Japanese J. Appl. Phys.", + volume = "31", + number = "Part 1, No. 2A", + pages = "343--347", + numpages = "4", + year = "1992", + URL = "http://jjap.ipap.jp/link?JJAP/31/343/", + doi = "10.1143/JJAP.31.343", + publisher = "The Japan Society of Applied Physics", + notes = "c-c bonds in c implanted si, hot implantation + efficiency, c-c hard to break by thermal annealing", +} + +@Article{eichhorn99, + author = "F. Eichhorn and N. Schell and W. Matz and R. + K{\"{o}}gler", + collaboration = "", + title = "Strain and Si{C} particle formation in silicon + implanted with carbon ions of medium fluence studied by + synchrotron x-ray diffraction", + publisher = "AIP", + year = "1999", + journal = "J. Appl. Phys.", + volume = "86", + number = "8", + pages = "4184--4187", + keywords = "silicon; carbon; elemental semiconductors; chemical + interdiffusion; ion implantation; X-ray diffraction; + precipitation; semiconductor doping", + URL = "http://link.aip.org/link/?JAP/86/4184/1", + doi = "10.1063/1.371344", + notes = "sic conversion by ibs, detected substitutional carbon, + expansion of si lattice", +} + +@Article{eichhorn02, + author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H. + Metzger and W. Matz and R. K{\"{o}}gler", + collaboration = "", + title = "Structural relation between Si and Si{C} formed by + carbon ion implantation", + publisher = "AIP", + year = "2002", + journal = "J. Appl. Phys.", + volume = "91", + number = "3", + pages = "1287--1292", + keywords = "silicon compounds; wide band gap semiconductors; ion + implantation; annealing; X-ray scattering; transmission + electron microscopy", + URL = "http://link.aip.org/link/?JAP/91/1287/1", + doi = "10.1063/1.1428105", + notes = "3c-sic alignement to si host in ibs depending on + temperature, might explain c into c sub trafo", +} + +@Article{lucas10, + author = "G Lucas and M Bertolus and L Pizzagalli", + title = "An environment-dependent interatomic potential for + silicon carbide: calculation of bulk properties, + high-pressure phases, point and extended defects, and + amorphous structures", + journal = "J. Phys.: Condens. 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Lett.", + volume = "50", + number = "4", + pages = "221--223", + keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON + MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL + VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION + ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE + BOUNDARIES", + URL = "http://link.aip.org/link/?APL/50/221/1", + doi = "10.1063/1.97667", + notes = "apb 3c-sic heteroepitaxy on si", +} + +@Article{shibahara86, + title = "Surface morphology of cubic Si{C}(100) grown on + Si(100) by chemical vapor deposition", + journal = "J. Cryst. Growth", + volume = "78", + number = "3", + pages = "538--544", + year = "1986", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(86)90158-2", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9", + author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki + Matsunami", + notes = "defects in 3c-sis cvd on si, anti phase boundaries", +} + +@Article{desjardins96, + author = "P. Desjardins and J. E. Greene", + collaboration = "", + title = "Step-flow epitaxial growth on two-domain surfaces", + publisher = "AIP", + year = "1996", + journal = "J. Appl. Phys.", + volume = "79", + number = "3", + pages = "1423--1434", + keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY; + FILM GROWTH; SURFACE STRUCTURE", + URL = "http://link.aip.org/link/?JAP/79/1423/1", + doi = "10.1063/1.360980", + notes = "apb model", +} + +@Article{henke95, + author = "S. Henke and B. Stritzker and B. Rauschenbach", + collaboration = "", + title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60] + carbonization of silicon", + publisher = "AIP", + year = "1995", + journal = "J. Appl. Phys.", + volume = "78", + number = "3", + pages = "2070--2073", + keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION; + FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL + STRUCTURE", + URL = "http://link.aip.org/link/?JAP/78/2070/1", + doi = "10.1063/1.360184", + notes = "ssmbe of sic on si, lower temperatures", +} + +@Article{fuyuki89, + title = "Atomic layer epitaxy of cubic Si{C} by gas source + {MBE} using surface superstructure", + journal = "J. Cryst. Growth", + volume = "95", + number = "1-4", + pages = "461--463", + year = "1989", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(89)90442-9", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2", + author = "Takashi Fuyuki and Michiaki Nakayama and Tatsuo + Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami", + notes = "gas source mbe of 3c-sic on 6h-sic", +} + +@Article{yoshinobu92, + author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa + and Takashi Fuyuki and Hiroyuki Matsunami", + collaboration = "", + title = "Lattice-matched epitaxial growth of single crystalline + 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source + molecular beam epitaxy", + publisher = "AIP", + year = "1992", + journal = "Appl. Phys. Lett.", + volume = "60", + number = "7", + pages = "824--826", + keywords = "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM + EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS; + INTERFACE STRUCTURE", + URL = "http://link.aip.org/link/?APL/60/824/1", + doi = "10.1063/1.107430", + notes = "gas source mbe of 3c-sic on 6h-sic", +} + +@Article{yoshinobu90, + title = "Atomic level control in gas source {MBE} growth of + cubic Si{C}", + journal = "J. Cryst. Growth", + volume = "99", + number = "1-4", + pages = "520--524", + year = "1990", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(90)90575-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736", + author = "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu + Shiomi and Takashi Fuyuki and Hiroyuki Matsunami", + notes = "gas source mbe of 3c-sic on 3c-sic", +} + +@Article{fuyuki93, + title = "Atomic layer epitaxy controlled by surface + superstructures in Si{C}", + journal = "Thin Solid Films", + volume = "225", + number = "1-2", + pages = "225--229", + year = "1993", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(93)90159-M", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f", + author = "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki + Matsunami", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{hara93, + title = "Microscopic mechanisms of accurate layer-by-layer + growth of [beta]-Si{C}", + journal = "Thin Solid Films", + volume = "225", + number = "1-2", + pages = "240--243", + year = "1993", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(93)90162-I", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c", + author = "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai + and S. Misawa and E. Sakuma and S. Yoshida", + notes = "gas source mbe of 3c-sic on 3c-sic, atomic layer + epitaxy, ale", +} + +@Article{tanaka94, + author = "Satoru Tanaka and R. Scott Kern and Robert F. Davis", + collaboration = "", + title = "Effects of gas flow ratio on silicon carbide thin film + growth mode and polytype formation during gas-source + molecular beam epitaxy", + publisher = "AIP", + year = "1994", + journal = "Appl. Phys. Lett.", + volume = "65", + number = "22", + pages = "2851--2853", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED; + TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; + NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS + FLOW; FLOW RATE", + URL = "http://link.aip.org/link/?APL/65/2851/1", + doi = "10.1063/1.112513", + notes = "gas source mbe of 6h-sic on 6h-sic", +} + +@Article{fuyuki97, + author = "T. Fuyuki and T. Hatayama and H. Matsunami", + title = "Heterointerface Control and Epitaxial Growth of + 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", + publisher = "WILEY-VCH Verlag", + year = "1997", + journal = "phys. status solidi (b)", + volume = "202", + pages = "359--378", + notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower + temperatures 750", +} + +@Article{takaoka98, + title = "Initial stage of Si{C} growth on Si(1 0 0) surface", + journal = "J. Cryst. Growth", + volume = "183", + number = "1-2", + pages = "175--182", + year = "1998", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/S0022-0248(97)00391-6", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918", + author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki", + keywords = "Reflection high-energy electron diffraction (RHEED)", + keywords = "Scanning electron microscopy (SEM)", + keywords = "Silicon carbide", + keywords = "Silicon", + keywords = "Island growth", + notes = "lower temperature, 550-700", +} + +@Article{hatayama95, + title = "Low-temperature heteroepitaxial growth of cubic Si{C} + on Si using hydrocarbon radicals by gas source + molecular beam epitaxy", + journal = "J. Cryst. Growth", + volume = "150", + number = "Part 2", + pages = "934--938", + year = "1995", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(95)80077-P", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e", + author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki + and Hiroyuki Matsunami", +} + +@Article{heine91, + author = "Volker Heine and Ching Cheng and Richard J. Needs", + title = "The Preference of Silicon Carbide for Growth in the + Metastable Cubic Form", + journal = "J. Am. Ceram. Soc.", + volume = "74", + number = "10", + publisher = "Blackwell Publishing Ltd", + ISSN = "1551-2916", + URL = "http://dx.doi.org/10.1111/j.1151-2916.1991.tb06811.x", + doi = "10.1111/j.1151-2916.1991.tb06811.x", + pages = "2630--2633", + keywords = "silicon carbide, crystal growth, crystal structure, + calculations, stability", + year = "1991", + notes = "3c-sic metastable, 3c-sic preferred growth, sic + polytype dft calculation refs", +} + +@Article{allendorf91, + title = "The adsorption of {H}-atoms on polycrystalline + [beta]-silicon carbide", + journal = "Surface Science", + volume = "258", + number = "1-3", + pages = "177--189", + year = "1991", + note = "", + ISSN = "0039-6028", + doi = "DOI: 10.1016/0039-6028(91)90912-C", + URL = "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3", + author = "Mark D. Allendorf and Duane A. Outka", + notes = "h adsorption on 3c-sic", +} + +@Article{eaglesham93, + author = "D. J. Eaglesham and F. C. Unterwald and H. Luftman and + D. P. Adams and S. M. Yalisove", + collaboration = "", + title = "Effect of {H} on Si molecular-beam epitaxy", + publisher = "AIP", + year = "1993", + journal = "J. Appl. Phys.", + volume = "74", + number = "11", + pages = "6615--6618", + keywords = "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE + CONTAMINATION; SIMS; SEGREGATION; IMPURITIES; + DIFFUSION; ADSORPTION", + URL = "http://link.aip.org/link/?JAP/74/6615/1", + doi = "10.1063/1.355101", + notes = "h incorporation on si surface, lower surface + mobility", +} + +@Article{newman85, + author = "Ronald C. 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Nieminen", + journal = "Phys. Rev. B", + volume = "58", + number = "3", + pages = "1318--1325", + numpages = "7", + year = "1998", + month = jul, + doi = "10.1103/PhysRevB.58.1318", + publisher = "American Physical Society", + notes = "convergence k point supercell size, vacancy in + silicon", +} + +@Article{serre95, + author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A. + Romano-Rodr\'{\i}guez and J. R. Morante and R. + K{\"{o}}gler and W. Skorupa", + collaboration = "", + title = "Spectroscopic characterization of phases formed by + high-dose carbon ion implantation in silicon", + publisher = "AIP", + year = "1995", + journal = "J. Appl. Phys.", + volume = "77", + number = "7", + pages = "2978--2984", + keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS; + FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA; + PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE + DEPENDENCE; PRECIPITATES; ANNEALING", + URL = "http://link.aip.org/link/?JAP/77/2978/1", + doi = "10.1063/1.358714", +} + +@Article{romano-rodriguez96, + title = "Detailed analysis of [beta]-Si{C} formation by high + dose carbon ion implantation in silicon", + journal = "Materials Science and Engineering B", + volume = "36", + number = "1-3", + pages = "282--285", + year = "1996", + note = "European Materials Research Society 1995 Spring + Meeting, Symposium N: Carbon, Hydrogen, Nitrogen, and + Oxygen in Silicon and in Other Elemental + Semiconductors", + ISSN = "0921-5107", + doi = "DOI: 10.1016/0921-5107(95)01283-4", + URL = "http://www.sciencedirect.com/science/article/B6TXF-3VR7691-25/2/995fd57b9e5c1100558f80c472620408", + author = "A. Romano-Rodriguez and C. Serre and L. Calvo-Barrio + and A. Pérez-Rodríguez and J. R. Morante and R. Kögler + and W. Skorupa", + keywords = "Silicon", + keywords = "Ion implantation", + notes = "incoherent 3c-sic precipitate", +} + +@Article{davidson75, + title = "The iterative calculation of a few of the lowest + eigenvalues and corresponding eigenvectors of large + real-symmetric matrices", + journal = "J. Comput. Phys.", + volume = "17", + number = "1", + pages = "87--94", + year = "1975", + note = "", + ISSN = "0021-9991", + doi = "DOI: 10.1016/0021-9991(75)90065-0", + URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650", + author = "Ernest R. Davidson", +} + +@Book{adorno_mm, + title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten + Leben", + author = "T. W. Adorno", + ISBN = "978-3-518-01236-9", + URL = "http://books.google.com/books?id=coZqRAAACAAJ", + year = "1994", + publisher = "Suhrkamp", +}