X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=e5abf0d0a00891b3fa5d1674bda6a38b01e8c31e;hp=81c6b2fe978a69323d224e5df99ff9a36320b864;hb=57c4f83501c66926136800286a47ca736c474af8;hpb=602832efd59018f1de63a29e6f9cdddaf5afd5da diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 81c6b2f..e5abf0d 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -16,6 +16,23 @@ year = "1926", } +@Article{bloch29, + author = "Felix Bloch", + affiliation = "Institut d. Universität f. theor. Physik Leipzig", + title = "Über die Quantenmechanik der Elektronen in + Kristallgittern", + journal = "Zeitschrift für Physik A Hadrons and Nuclei", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0939-7922", + keyword = "Physics and Astronomy", + pages = "555--600", + volume = "52", + issue = "7", + URL = "http://dx.doi.org/10.1007/BF01339455", + note = "10.1007/BF01339455", + year = "1929", +} + @Article{albe_sic_pot, author = "Paul Erhart and Karsten Albe", title = "Analytical potential for atomistic simulations of @@ -71,7 +88,7 @@ @Article{newman65, title = "Vibrational absorption of carbon in silicon", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "26", number = "2", pages = "373--379", @@ -91,7 +108,7 @@ title = "Effect of Carbon on the Lattice Parameter of Silicon", publisher = "AIP", year = "1968", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "39", number = "9", pages = "4365--4368", @@ -102,7 +119,7 @@ @Article{bean71, title = "The solubility of carbon in pulled silicon crystals", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "32", number = "6", pages = "1211--1219", @@ -600,6 +617,23 @@ silicon, si self interstitials, free energy", } +@Article{mattsson08, + title = "Electronic surface error in the Si interstitial + formation energy", + author = "Ann E. Mattsson and Ryan R. Wixom and Rickard + Armiento", + journal = "Phys. Rev. B", + volume = "77", + number = "15", + pages = "155211", + numpages = "7", + year = "2008", + month = apr, + doi = "10.1103/PhysRevB.77.155211", + publisher = "American Physical Society", + notes = "si self interstitial formation energies by dft", +} + @Article{goedecker02, title = "A Fourfold Coordinated Point Defect in Silicon", author = "Stefan Goedecker and Thierry Deutsch and Luc Billard", @@ -1054,7 +1088,7 @@ silicon", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "6", pages = "3815--3820", @@ -1099,7 +1133,7 @@ @Article{foell77, title = "The formation of swirl defects in silicon by agglomeration of self-interstitials", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "40", number = "1", pages = "90--108", @@ -1116,7 +1150,7 @@ @Article{foell81, title = "Microdefects in silicon and their relation to point defects", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "52", number = "Part 2", pages = "907--916", @@ -1153,8 +1187,8 @@ @InProceedings{werner96, author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D. Eichler", - booktitle = "Ion Implantation Technology. Proceedings of the 11th - International Conference on", + booktitle = "Proceedings of the 11th International Conference on + Ion Implantation Technology.", title = "{TEM} investigation of {C}-Si defects in carbon implanted silicon", year = "1996", @@ -1194,7 +1228,7 @@ silicon", publisher = "AIP", year = "1984", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "45", number = "3", pages = "268--269", @@ -1214,7 +1248,7 @@ Ge[sup + ] and {C}[sup + ] implantation", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "57", number = "22", pages = "2345--2347", @@ -1233,7 +1267,7 @@ title = "Metastable SiGe{C} formation by solid phase epitaxy", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "63", number = "20", pages = "2786--2788", @@ -1254,7 +1288,7 @@ strained layer superlattices", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "22", pages = "2758--2760", @@ -1606,7 +1640,7 @@ title = "Organometallic vapor phase epitaxial growth of Ga{N} on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion implantation into Si(1 1 1) substrate", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "261", number = "2-3", pages = "266--270", @@ -1639,7 +1673,7 @@ @Article{takeuchi91, title = "Growth of single crystalline Ga{N} film on Si substrate using 3{C}-Si{C} as an intermediate layer", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "115", number = "1-4", pages = "634--638", @@ -1993,7 +2027,7 @@ @Article{tairov81, title = "General principles of growing large-size single crystals of various silicon carbide polytypes", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "52", number = "Part 1", pages = "146--150", @@ -2007,7 +2041,7 @@ @Article{barrett91, title = "Si{C} boule growth by sublimation vapor transport", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "109", number = "1-4", pages = "17--23", @@ -2022,7 +2056,7 @@ @Article{barrett93, title = "Growth of large Si{C} single crystals", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "128", number = "1-4", pages = "358--362", @@ -2040,7 +2074,7 @@ title = "Control of polytype formation by surface energy effects during the growth of Si{C} monocrystals by the sublimation method", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "131", number = "1-2", pages = "71--74", @@ -2097,7 +2131,7 @@ Single-Crystal Films on Si", publisher = "ECS", year = "1987", - journal = "Journal of The Electrochemical Society", + journal = "J. Electrochem. Soc.", volume = "134", number = "6", pages = "1558--1565", @@ -2116,7 +2150,7 @@ off-axis Si substrates", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "11", pages = "823--825", @@ -2132,7 +2166,7 @@ @Article{ueda90, title = "Crystal growth of Si{C} by step-controlled epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "104", number = "3", pages = "695--700", @@ -2174,7 +2208,7 @@ vicinal (0001) 6{H}-Si{C} wafers", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "15", pages = "1442--1444", @@ -2195,7 +2229,7 @@ substrates", publisher = "AIP", year = "1988", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "64", number = "5", pages = "2672--2679", @@ -2239,7 +2273,7 @@ substrates", publisher = "AIP", year = "1988", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "63", number = "8", pages = "2645--2650", @@ -2261,7 +2295,7 @@ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", publisher = "AIP", year = "1991", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "59", number = "3", pages = "333--335", @@ -2296,7 +2330,7 @@ @Article{kaneda87, title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric properties of its p-n junction", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "81", number = "1-4", pages = "536--542", @@ -2354,7 +2388,7 @@ level using surface superstructures", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "9", pages = "1204--1206", @@ -2506,7 +2540,7 @@ title = "High-temperature ion beam synthesis of cubic Si{C}", publisher = "AIP", year = "1990", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "67", number = "6", pages = "2908--2912", @@ -2566,7 +2600,7 @@ implanted boron into silicon", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "50", number = "7", pages = "416--418", @@ -2587,7 +2621,7 @@ profiles", publisher = "AIP", year = "1990", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "68", number = "12", pages = "6191--6198", @@ -2715,7 +2749,7 @@ Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "24", pages = "3033--3035", @@ -2753,7 +2787,7 @@ @Article{powell93_2, title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties of the ternary system", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "127", number = "1-4", pages = "425--429", @@ -2770,7 +2804,7 @@ author = "H. J. Osten", title = "Modification of Growth Modes in Lattice-Mismatched Epitaxial Systems: Si/Ge", - journal = "physica status solidi (a)", + journal = "phys. status solidi (a)", volume = "145", number = "2", publisher = "WILEY-VCH Verlag", @@ -2804,7 +2838,7 @@ on Si(001) by adding small amounts of carbon", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "64", number = "25", pages = "3440--3442", @@ -2825,7 +2859,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "3", pages = "356--358", @@ -2920,17 +2954,17 @@ } @Article{slater29, - title = {The Theory of Complex Spectra}, - author = {Slater, J. C.}, - journal = {Phys. Rev.}, - volume = {34}, - number = {10}, - pages = {1293--1322}, - numpages = {29}, - year = {1929}, - month = {Nov}, - doi = {10.1103/PhysRev.34.1293}, - publisher = {American Physical Society} + title = "The Theory of Complex Spectra", + author = "J. C. Slater", + journal = "Phys. Rev.", + volume = "34", + number = "10", + pages = "1293--1322", + numpages = "29", + year = "1929", + month = nov, + doi = "10.1103/PhysRev.34.1293", + publisher = "American Physical Society", } @Article{kohn65, @@ -2949,6 +2983,35 @@ notes = "dft, exchange and correlation", } +@Article{kohn96, + title = "Density Functional and Density Matrix Method Scaling + Linearly with the Number of Atoms", + author = "W. Kohn", + journal = "Phys. Rev. Lett.", + volume = "76", + number = "17", + pages = "3168--3171", + numpages = "3", + year = "1996", + month = apr, + doi = "10.1103/PhysRevLett.76.3168", + publisher = "American Physical Society", +} + +@Article{kohn98, + title = "Edge Electron Gas", + author = "Walter Kohn and Ann E. Mattsson", + journal = "Phys. Rev. Lett.", + volume = "81", + number = "16", + pages = "3487--3490", + numpages = "3", + year = "1998", + month = oct, + doi = "10.1103/PhysRevLett.81.3487", + publisher = "American Physical Society", +} + @Article{kohn99, title = "Nobel Lecture: Electronic structure of matter---wave functions and density functionals", @@ -2964,6 +3027,23 @@ publisher = "American Physical Society", } +@Article{payne92, + title = "Iterative minimization techniques for ab initio + total-energy calculations: molecular dynamics and + conjugate gradients", + author = "M. C. Payne and M. P. Teter and D. C. Allan and T. A. + Arias and J. D. Joannopoulos", + journal = "Rev. Mod. Phys.", + volume = "64", + number = "4", + pages = "1045--1097", + numpages = "52", + year = "1992", + month = oct, + doi = "10.1103/RevModPhys.64.1045", + publisher = "American Physical Society", +} + @Article{levy82, title = "Electron densities in search of Hamiltonians", author = "Mel Levy", @@ -3002,7 +3082,7 @@ by Low-Temperature Chemical Vapor Deposition", author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and Yuichi Yoneyama and Akira Yamada and Makoto Konagai", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "41", number = "Part 1, No. 4B", pages = "2472--2475", @@ -3038,7 +3118,7 @@ y] layers on Si(001)", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "65", number = "26", pages = "3356--3358", @@ -3060,7 +3140,7 @@ y]{C}[sub y] on Si(001)", publisher = "AIP", year = "1996", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "80", number = "12", pages = "6711--6715", @@ -3412,7 +3492,7 @@ @Article{chaussende07, author = "D. Chaussende and P. J. Wellmann and M. Pons", title = "Status of Si{C} bulk growth processes", - journal = "Journal of Physics D: Applied Physics", + journal = "J. Phys. D", volume = "40", number = "20", pages = "6150", @@ -3524,7 +3604,7 @@ Heteroepitaxial Growth", publisher = "WILEY-VCH Verlag", year = "1997", - journal = "physica status solidi (b)", + journal = "phys. status solidi (b)", volume = "202", pages = "405--420", URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5", @@ -3608,7 +3688,7 @@ @Article{hornstra58, title = "Dislocations in the diamond lattice", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "5", number = "1-2", pages = "129--141", @@ -3810,6 +3890,22 @@ notes = "paw method", } +@InCollection{cohen70, + title = "The Fitting of Pseudopotentials to Experimental Data + and Their Subsequent Application", + editor = "Frederick Seitz Henry Ehrenreich and David Turnbull", + booktitle = "", + publisher = "Academic Press", + year = "1970", + volume = "24", + pages = "37--248", + series = "Solid State Physics", + ISSN = "0081-1947", + doi = "DOI: 10.1016/S0081-1947(08)60070-3", + URL = "http://www.sciencedirect.com/science/article/B8GXT-4S9NXKG-9/2/ba01db77c8b19c2bab01506d4ea571b3", + author = "Marvin L. Cohen and Volker Heine", +} + @Article{hamann79, title = "Norm-Conserving Pseudopotentials", author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang", @@ -3825,6 +3921,21 @@ notes = "norm-conserving pseudopotentials", } +@Article{troullier91, + title = "Efficient pseudopotentials for plane-wave + calculations", + author = "N. Troullier and Jos\'e Luriaas Martins", + journal = "Phys. Rev. B", + volume = "43", + number = "3", + pages = "1993--2006", + numpages = "13", + year = "1991", + month = jan, + doi = "10.1103/PhysRevB.43.1993", + publisher = "American Physical Society", +} + @Article{vanderbilt90, title = "Soft self-consistent pseudopotentials in a generalized eigenvalue formalism", @@ -3841,6 +3952,36 @@ notes = "vasp pseudopotentials", } +@Article{ceperley80, + title = "Ground State of the Electron Gas by a Stochastic + Method", + author = "D. M. Ceperley and B. J. Alder", + journal = "Phys. Rev. Lett.", + volume = "45", + number = "7", + pages = "566--569", + numpages = "3", + year = "1980", + month = aug, + doi = "10.1103/PhysRevLett.45.566", + publisher = "American Physical Society", +} + +@Article{perdew81, + title = "Self-interaction correction to density-functional + approximations for many-electron systems", + author = "J. P. Perdew and Alex Zunger", + journal = "Phys. Rev. B", + volume = "23", + number = "10", + pages = "5048--5079", + numpages = "31", + year = "1981", + month = may, + doi = "10.1103/PhysRevB.23.5048", + publisher = "American Physical Society", +} + @Article{perdew86, title = "Accurate and simple density functional for the electronic exchange energy: Generalized gradient @@ -3893,6 +4034,20 @@ notes = "gga pw91 (as in vasp)", } +@Article{chadi73, + title = "Special Points in the Brillouin Zone", + author = "D. J. Chadi and Marvin L. Cohen", + journal = "Phys. Rev. B", + volume = "8", + number = "12", + pages = "5747--5753", + numpages = "6", + year = "1973", + month = dec, + doi = "10.1103/PhysRevB.8.5747", + publisher = "American Physical Society", +} + @Article{baldereschi73, title = "Mean-Value Point in the Brillouin Zone", author = "A. Baldereschi", @@ -3908,6 +4063,20 @@ notes = "mean value k point", } +@Article{monkhorst76, + title = "Special points for Brillouin-zone integrations", + author = "Hendrik J. Monkhorst and James D. Pack", + journal = "Phys. Rev. B", + volume = "13", + number = "12", + pages = "5188--5192", + numpages = "4", + year = "1976", + month = jun, + doi = "10.1103/PhysRevB.13.5188", + publisher = "American Physical Society", +} + @Article{zhu98, title = "Ab initio pseudopotential calculations of dopant diffusion in Si", @@ -4246,7 +4415,7 @@ title = "Growth and Properties of beta-Si{C} Single Crystals", publisher = "AIP", year = "1966", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "37", number = "1", pages = "333--336", @@ -4284,7 +4453,7 @@ title = "Electronic Conduction in Silicon Carbide", publisher = "AIP", year = "1953", - journal = "The Journal of Chemical Physics", + journal = "J. Chem. Phys.", volume = "21", number = "5", pages = "821--827", @@ -4319,7 +4488,7 @@ improved external quantum efficiency", publisher = "AIP", year = "1982", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "53", number = "10", pages = "6962--6967", @@ -4413,7 +4582,7 @@ single crystals by physical vapor transport", publisher = "AIP", year = "1998", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "72", number = "13", pages = "1632--1634", @@ -4431,7 +4600,7 @@ title = "Antiphase boundaries in epitaxially grown beta-Si{C}", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "50", number = "4", pages = "221--223", @@ -4448,7 +4617,7 @@ @Article{shibahara86, title = "Surface morphology of cubic Si{C}(100) grown on Si(100) by chemical vapor deposition", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "78", number = "3", pages = "538--544", @@ -4468,7 +4637,7 @@ title = "Step-flow epitaxial growth on two-domain surfaces", publisher = "AIP", year = "1996", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "79", number = "3", pages = "1423--1434", @@ -4486,7 +4655,7 @@ carbonization of silicon", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "3", pages = "2070--2073", @@ -4501,7 +4670,7 @@ @Article{fuyuki89, title = "Atomic layer epitaxy of cubic Si{C} by gas source {MBE} using surface superstructure", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "95", number = "1-4", pages = "461--463", @@ -4524,7 +4693,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "7", pages = "824--826", @@ -4539,7 +4708,7 @@ @Article{yoshinobu90, title = "Atomic level control in gas source {MBE} growth of cubic Si{C}", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "99", number = "1-4", pages = "520--524", @@ -4597,7 +4766,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "65", number = "22", pages = "2851--2853", @@ -4616,7 +4785,7 @@ 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy", publisher = "WILEY-VCH Verlag", year = "1997", - journal = "physica status solidi (b)", + journal = "phys. status solidi (b)", volume = "202", pages = "359--378", notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower @@ -4625,7 +4794,7 @@ @Article{takaoka98, title = "Initial stage of Si{C} growth on Si(1 0 0) surface", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "183", number = "1-2", pages = "175--182", @@ -4647,7 +4816,7 @@ title = "Low-temperature heteroepitaxial growth of cubic Si{C} on Si using hydrocarbon radicals by gas source molecular beam epitaxy", - journal = "Journal of Crystal Growth", + journal = "J. Cryst. Growth", volume = "150", number = "Part 2", pages = "934--938", @@ -4664,7 +4833,7 @@ author = "Volker Heine and Ching Cheng and Richard J. Needs", title = "The Preference of Silicon Carbide for Growth in the Metastable Cubic Form", - journal = "Journal of the American Ceramic Society", + journal = "J. Am. Ceram. Soc.", volume = "74", number = "10", publisher = "Blackwell Publishing Ltd", @@ -4702,7 +4871,7 @@ title = "Effect of {H} on Si molecular-beam epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "11", pages = "6615--6618", @@ -4730,7 +4899,7 @@ @Article{newman61, title = "The diffusivity of carbon in silicon", - journal = "Journal of Physics and Chemistry of Solids", + journal = "J. Phys. Chem. Solids", volume = "19", number = "3-4", pages = "230--234", @@ -4760,7 +4929,7 @@ title = "Defects in Carbon-Implanted Silicon", author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru Fukuoka and Haruo Saito", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "21", number = "Part 1, No. 2", pages = "399--400", @@ -4798,7 +4967,7 @@ high-dose carbon ion implantation in silicon", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "77", number = "7", pages = "2978--2984", @@ -4832,3 +5001,29 @@ keywords = "Ion implantation", notes = "incoherent 3c-sic precipitate", } + +@Article{davidson75, + title = "The iterative calculation of a few of the lowest + eigenvalues and corresponding eigenvectors of large + real-symmetric matrices", + journal = "J. Comput. Phys.", + volume = "17", + number = "1", + pages = "87--94", + year = "1975", + note = "", + ISSN = "0021-9991", + doi = "DOI: 10.1016/0021-9991(75)90065-0", + URL = "http://www.sciencedirect.com/science/article/pii/0021999175900650", + author = "Ernest R. Davidson", +} + +@Book{adorno_mm, + title = "Minima Moralia: Reflexionen aus dem besch{\"a}digten + Leben", + author = "T. W. Adorno", + ISBN = "978-3-518-01236-9", + URL = "http://books.google.com/books?id=coZqRAAACAAJ", + year = "1994", + publisher = "Suhrkamp", +}