X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=e92eaf33d8546b49674799469e48702975f03aa4;hp=92eba98adbb6cdf810181bcbd81153a9e3a40f0b;hb=83b288f17dd99c8b90ccce0b28673ce59e139ef3;hpb=0127fc6e8906f9b16769fa067f65bc309e37d70a diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 92eba98..e92eaf3 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -4054,7 +4054,7 @@ author = "Marvin L. Cohen and Volker Heine", } -@Article{hamann79, +%@Article{hamann79, title = "Norm-Conserving Pseudopotentials", author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang", journal = "Phys. Rev. Lett.", @@ -4069,6 +4069,20 @@ notes = "norm-conserving pseudopotentials", } +@Article{kleinman82, + journal = "Phys. Rev. Lett.", + month = may, + doi = "10.1103/PhysRevLett.48.1425", + issue = "20", + author = "Leonard Kleinman and D. M. Bylander", + title = "Efficacious Form for Model Pseudopotentials", + year = "1982", + URL = "http://link.aps.org/doi/10.1103/PhysRevLett.48.1425", + publisher = "American Physical Society", + pages = "1425--1428", + volume = "48", +} + @Article{troullier91, title = "Efficient pseudopotentials for plane-wave calculations", @@ -4303,6 +4317,22 @@ si", } +@Article{jones89, + doi = "10.1103/RevModPhys.61.689", + month = jul, + issue = "3", + author = "R. O. Jones and O. Gunnarsson", + year = "1989", + URL = "http://link.aps.org/doi/10.1103/RevModPhys.61.689", + publisher = "American Physical Society", + title = "The density functional formalism, its applications and + prospects", + pages = "689--746", + journal = "Rev. Mod. Phys.", + volume = "61", + notes = "dft intro", +} + @Article{park02, author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N. T Soares and Y.-W. Kim and H. Kim and P. Desjardins and @@ -4675,8 +4705,8 @@ R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring and J. J. Sumakeris and A. W. Saxler and J. W. Milligan", - booktitle = "Microwave Symposium Digest, 2002 IEEE MTT-S - International", + booktitle = "2002 IEEE MTT-S International Microwave Symposium + Digest", title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in power amplifier design", year = "2002", @@ -4693,8 +4723,8 @@ author = "F. Temcamani and P. Pouvil and O. Noblanc and C. Brylinski and P. Bannelier and B. Darges and J. P. Prigent", - booktitle = "Microwave Symposium Digest, 2001 IEEE MTT-S - International", + booktitle = "2001 IEEE MTT-S International Microwave Symposium + Digest", title = "Silicon carbide {MESFET}s performances and application in broadcast power amplifiers", year = "2001", @@ -4723,7 +4753,7 @@ @Article{bhatnagar93, author = "M. Bhatnagar and B. J. Baliga", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power devices", year = "1993", @@ -4744,10 +4774,84 @@ notes = "comparison 3c 6h sic and si devices", } +@Article{ryu01, + author = "Sei-Hyung Ryu and A. K. Agarwal and R. Singh and J. W. + Palmour", + journal = "IEEE Electron Device Lett.", + title = "1800 {V} {NPN} bipolar junction transistors in + 4{H}-Si{C}", + year = "2001", + month = mar, + volume = "22", + number = "3", + pages = "124--126", + keywords = "1800 V;4H-SiC high-voltage n-p-n bipolar junction + transistor;SiC;blocking voltage;current gain;deep level + acceptor;minority carrier lifetime;on-resistance;power + switching device;temperature coefficient;carrier + lifetime;deep levels;minority carriers;power bipolar + transistors;silicon compounds;wide band gap + semiconductors;", + doi = "10.1109/55.910617", + ISSN = "0741-3106", +} + +@Article{baliga96, + author = "B. J. Baliga", + journal = "IEEE Trans. Electron Devices", + title = "Trends in power semiconductor devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1717--1731", + keywords = "DMOS technology;GTO;GaAs;IGBT;MOS-gated + devices;MOS-gated thyristors;MPS rectifier;PIN + rectifier;Schottky rectifier;Si;SiC;SiC based + switches;TMBS rectifier;UMOS technology;VMOS + technology;bipolar power transistor;high voltage power + rectifiers;low voltage power rectifiers;power + MOSFET;power losses;power semiconductor devices;power + switch technology;review;semiconductor device + technology;MOS-controlled thyristors;bipolar transistor + switches;field effect transistor switches;gallium + arsenide;insulated gate bipolar transistors;p-i-n + diodes;power bipolar transistors;power field effect + transistors;power semiconductor devices;power + semiconductor diodes;power semiconductor + switches;reviews;silicon;silicon compounds;solid-state + rectifiers;thyristors;", + doi = "10.1109/16.536818", + ISSN = "0018-9383", +} + +@Article{bhatnagar92, + author = "M. Bhatnagar and P. K. McLarty and B. J. Baliga", + journal = "IEEE Electron Device Lett.", + title = "Silicon-carbide high-voltage (400 {V}) Schottky + barrier diodes", + year = "1992", + month = oct, + volume = "13", + number = "10", + pages = "501--503", + keywords = "1.1 V;25 to 200 C;400 V;6H-SiC;Pt-SiC;Schottky barrier + diodes;breakdown + voltages;characteristics;fabrication;forward I-V + characteristics;forward voltage drop;on-state current + density;rectifiers;reverse I-V characteristics;reverse + recovery characteristics;sharp breakdown;temperature + range;Schottky-barrier diodes;platinum;power + electronics;semiconductor materials;silicon + compounds;solid-state rectifiers;", + doi = "10.1109/55.192814", + ISSN = "0741-3106", +} + @Article{neudeck94, author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J. A. Powell and C. S. Salupo and L. G. Matus", - journal = "Electron Devices, IEEE Transactions on", + journal = "IEEE Trans. Electron Devices", title = "Electrical properties of epitaxial 3{C}- and 6{H}-Si{C} p-n junction diodes produced side-by-side on 6{H}-Si{C} substrates", @@ -4774,6 +4878,98 @@ substrate", } +@Article{weitzel96, + author = "C. E. Weitzel and J. W. Palmour and Jr. {Carter, C.H.} + and K. Moore and K. K. Nordquist and S. Allen and C. + Thero and M. Bhatnagar", + journal = "IEEE Trans. Electron Devices", + title = "Silicon carbide high-power devices", + year = "1996", + month = oct, + volume = "43", + number = "10", + pages = "1732--1741", + keywords = "1200 V;1400 V;4H-SiC;500 MHz to 32 GHz;57 W;Schottky + barrier diodes;SiC;SiC devices;UMOSFET;current + density;high electric breakdown field;high saturated + electron drift velocity;high thermal + conductivity;high-power devices;packaged SIT;submicron + gate length MESFET;Schottky diodes;current + density;electric breakdown;power MESFET;power + MOSFET;power semiconductor devices;power semiconductor + diodes;reviews;silicon compounds;static induction + transistors;wide band gap semiconductors;", + doi = "10.1109/16.536819", + ISSN = "0018-9383", + notes = "high power devices", +} + +@Article{zhu08, + author = "Lin Zhu and T. P. Chow", + journal = "IEEE Trans. Electron Devices", + title = "Advanced High-Voltage 4{H}-Si{C} Schottky Rectifiers", + year = "2008", + month = aug, + volume = "55", + number = "8", + pages = "1871--1874", + keywords = "H-SiC;OFF-state characteristics;ON-state + characteristics;blocking capability;high-voltage + Schottky rectifier;junction barrier Schottky + rectifier;lateral channel JBS rectifier;leakage + current;pinlike reverse characteristics;Schottky + barriers;Schottky diodes;leakage currents;rectifying + circuits;", + doi = "10.1109/TED.2008.926642", + ISSN = "0018-9383", +} + +@Article{brown93, + author = "D. M. Brown and E. T. Downey and M. Ghezzo and J. W. + Kretchmer and R. J. Saia and Y. S. Liu and J. A. Edmond + and G. Gati and J. M. Pimbley and W. E. Schneider", + journal = "IEEE Trans. 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