X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=ebcc2675d90ac53426b7ed80fbee97f121e6cf67;hp=56041dfc8e96d120cb2ead1e6f8931f420d9e658;hb=deb1c40d072e9bbb20e69d6365233dceeb9f2bb9;hpb=9f6e7316fb4233586a256546083b9964e16a8e71 diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 56041df..ebcc267 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,37 @@ notes = "derivation of albe bond order formalism", } +@Article{newman65, + title = "Vibrational absorption of carbon in silicon", + journal = "Journal of Physics and Chemistry of Solids", + volume = "26", + number = "2", + pages = "373--379", + year = "1965", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(65)90166-6", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667", + author = "R. C. Newman and J. B. Willis", + notes = "c impurity dissolved as substitutional c in si", +} + +@Article{baker68, + author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C. + Buschert", + collaboration = "", + title = "Effect of Carbon on the Lattice Parameter of Silicon", + publisher = "AIP", + year = "1968", + journal = "Journal of Applied Physics", + volume = "39", + number = "9", + pages = "4365--4368", + URL = "http://link.aip.org/link/?JAP/39/4365/1", + doi = "10.1063/1.1656977", + notes = "lattice contraction due to subst c", +} + @Article{bean71, title = "The solubility of carbon in pulled silicon crystals", journal = "Journal of Physics and Chemistry of Solids", @@ -951,6 +982,26 @@ silicon", } +@Article{isomae93, + author = "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and + Masao Tamura", + collaboration = "", + title = "Annealing behavior of Me{V} implanted carbon in + silicon", + publisher = "AIP", + year = "1993", + journal = "Journal of Applied Physics", + volume = "74", + number = "6", + pages = "3815--3820", + keywords = "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV + RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH + PROFILES", + URL = "http://link.aip.org/link/?JAP/74/3815/1", + doi = "10.1063/1.354474", + notes = "c at interstitial location for rt implantation in si", +} + @Article{strane96, title = "Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy", @@ -981,6 +1032,39 @@ stress, avoid sic precipitation", } +@Article{foell77, + title = "The formation of swirl defects in silicon by + agglomeration of self-interstitials", + journal = "Journal of Crystal Growth", + volume = "40", + number = "1", + pages = "90--108", + year = "1977", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(77)90034-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "b-swirl: si + c interstitial agglomerates, c-si + agglomerate", +} + +@Article{foell81, + title = "Microdefects in silicon and their relation to point + defects", + journal = "Journal of Crystal Growth", + volume = "52", + number = "Part 2", + pages = "907--916", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90397-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "swirl review", +} + @Article{werner97, author = "P. Werner and S. Eichler and G. Mariani and R. K{\"{o}}gler and W. Skorupa", @@ -1039,6 +1123,45 @@ notes = "c diffusion in si, kick out mechnism", } +@Article{kalejs84, + author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele", + collaboration = "", + title = "Self-interstitial enhanced carbon diffusion in + silicon", + publisher = "AIP", + year = "1984", + journal = "Applied Physics Letters", + volume = "45", + number = "3", + pages = "268--269", + keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS; + CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH + TEMPERATURE; IMPURITIES", + URL = "http://link.aip.org/link/?APL/45/268/1", + doi = "10.1063/1.95167", + notes = "c diffusion due to si self-interstitials", +} + +@Article{strane93, + author = "J. W. Strane and H. J. Stein and S. R. Lee and B. L. + Doyle and S. T. Picraux and J. W. Mayer", + collaboration = "", + title = "Metastable SiGe{C} formation by solid phase epitaxy", + publisher = "AIP", + year = "1993", + journal = "Applied Physics Letters", + volume = "63", + number = "20", + pages = "2786--2788", + keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY + SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES; + ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD + SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE + EPITAXY; AMORPHIZATION", + URL = "http://link.aip.org/link/?APL/63/2786/1", + doi = "10.1063/1.110334", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -1223,6 +1346,59 @@ doi = "10.1557/PROC-354-171", URL = "http://dx.doi.org/10.1557/PROC-354-171", eprint = "http://journals.cambridge.org/article_S1946427400420853", + notes = "first time ibs at moderate temperatures", +} + +@Article{lindner96, + title = "Formation of buried epitaxial silicon carbide layers + in silicon by ion beam synthesis", + journal = "Materials Chemistry and Physics", + volume = "46", + number = "2-3", + pages = "147--155", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/S0254-0584(97)80008-9", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7", + author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B. + Götz and A. Frohnwieser and B. Rauschenbach and B. + Stritzker", + notes = "dose window", +} + +@Article{calcagno96, + title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by + ion implantation", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "120", + number = "1-4", + pages = "121--124", + year = "1996", + note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on + New Trends in Ion Beam Processing of Materials", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(96)00492-2", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d", + author = "L. Calcagno and G. Compagnini and G. Foti and M. G. + Grimaldi and P. Musumeci", + notes = "dose window, graphitic bonds", +} + +@Article{lindner98, + title = "Mechanisms of Si{C} Formation in the Ion Beam + Synthesis of 3{C}-Si{C} Layers in Silicon", + journal = "Materials Science Forum", + volume = "264-268", + pages = "215--218", + year = "1998", + note = "", + doi = "10.4028/www.scientific.net/MSF.264-268.215", + URL = "http://www.scientific.net/MSF.264-268.215", + author = "J. K. N. Lindner and W. Reiber and B. Stritzker", + notes = "intermediate temperature for sharp interface + good + crystallinity", } @Article{lindner99, @@ -2211,6 +2387,68 @@ notes = "solubility of c in c-si, si-c phase diagram", } +@Article{hofker74, + author = "W. Hofker and H. Werner and D. Oosthoek and N. + Koeman", + affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research + Laboratories Eindhoven Netherlands Eindhoven + Netherlands", + title = "Boron implantations in silicon: {A} comparison of + charge carrier and boron concentration profiles", + journal = "Applied Physics A: Materials Science \& Processing", + publisher = "Springer Berlin / Heidelberg", + ISSN = "0947-8396", + keyword = "Physics and Astronomy", + pages = "125--133", + volume = "4", + issue = "2", + URL = "http://dx.doi.org/10.1007/BF00884267", + note = "10.1007/BF00884267", + year = "1974", + notes = "first time ted (only for boron?)", +} + +@Article{michel87, + author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R. + H. Kastl", + collaboration = "", + title = "Rapid annealing and the anomalous diffusion of ion + implanted boron into silicon", + publisher = "AIP", + year = "1987", + journal = "Applied Physics Letters", + volume = "50", + number = "7", + pages = "416--418", + keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION; + BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY + HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY", + URL = "http://link.aip.org/link/?APL/50/416/1", + doi = "10.1063/1.98160", + notes = "ted of boron in si", +} + +@Article{cowern90, + author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F. + Jos", + collaboration = "", + title = "Transient diffusion of ion-implanted {B} in Si: Dose, + time, and matrix dependence of atomic and electrical + profiles", + publisher = "AIP", + year = "1990", + journal = "Journal of Applied Physics", + volume = "68", + number = "12", + pages = "6191--6198", + keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME + DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS; + CRYSTALS; AMORPHIZATION", + URL = "http://link.aip.org/link/?JAP/68/6191/1", + doi = "10.1063/1.346910", + notes = "ted of boron in si", +} + @Article{cowern96, author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and F. W. Saris and W. Vandervorst", @@ -2319,6 +2557,28 @@ quasi-direct one", } +@Conference{powell93, + author = "A. R. Powell and K. Eberl and F. E. LeGoues and B. A. + Ek and S. S. Iyer", + collaboration = "", + title = "Stability of strained Si[sub 1 - y]{C}[sub y] random + alloy layers", + publisher = "AVS", + year = "1993", + journal = "J. Vac. Sci. Technol. B", + volume = "11", + number = "3", + pages = "1064--1068", + location = "Ottawa (Canada)", + keywords = "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS; + METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR + BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA; + TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS", + URL = "http://link.aip.org/link/?JVB/11/1064/1", + doi = "10.1116/1.587008", + notes = "substitutional c in si by mbe", +} + @Article{osten99, author = "H. J. Osten and J. Griesche and S. Scalese", collaboration = "", @@ -2336,7 +2596,7 @@ compounds", URL = "http://link.aip.org/link/?APL/74/836/1", doi = "10.1063/1.123384", - notes = "substitutional c in si", + notes = "substitutional c in si by mbe", } @Article{hohenberg64, @@ -2388,6 +2648,24 @@ si, dft", } +@Article{yagi02, + title = "Phosphorous Doping of Strain-Induced + Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\ + by Low-Temperature Chemical Vapor Deposition", + author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and + Yuichi Yoneyama and Akira Yamada and Makoto Konagai", + journal = "Japanese Journal of Applied Physics", + volume = "41", + number = "Part 1, No. 4B", + pages = "2472--2475", + numpages = "3", + year = "2002", + URL = "http://jjap.jsap.jp/link?JJAP/41/2472/", + doi = "10.1143/JJAP.41.2472", + publisher = "The Japan Society of Applied Physics", + notes = "experimental charge carrier mobility in strained si", +} + @Article{chang05, title = "Electron Transport Model for Strained Silicon-Carbon Alloy", @@ -2401,7 +2679,7 @@ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/", doi = "10.1143/JJAP.44.2257", publisher = "The Japan Society of Applied Physics", - notes = "enhance of electron mobility in starined si", + notes = "enhance of electron mobility in strained si", } @Article{osten97, @@ -4060,6 +4338,21 @@ eprint = "http://journals.cambridge.org/article_S194642740054367X", } +@Article{newman61, + title = "The diffusivity of carbon in silicon", + journal = "Journal of Physics and Chemistry of Solids", + volume = "19", + number = "3-4", + pages = "230--234", + year = "1961", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(61)90032-4", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd", + author = "R. C. Newman and J. Wakefield", + notes = "diffusivity of substitutional c in si", +} + @Article{goesele85, author = "U. Gösele", title = "The Role of Carbon and Point Defects in Silicon", @@ -4111,4 +4404,3 @@ URL = "http://link.aip.org/link/?JAP/77/2978/1", doi = "10.1063/1.358714", } -