X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=ebcc2675d90ac53426b7ed80fbee97f121e6cf67;hp=fdea40600e1b6a94e2fa14297f49415d5b9a9c1c;hb=deb1c40d072e9bbb20e69d6365233dceeb9f2bb9;hpb=26d5ef35681908ed195444714706dddb3d26c7ac

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index fdea406..ebcc267 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -982,6 +982,26 @@
                  silicon",
 }
 
+@Article{isomae93,
+  author =       "Seiichi Isomae and Tsutomu Ishiba and Toshio Ando and
+                 Masao Tamura",
+  collaboration = "",
+  title =        "Annealing behavior of Me{V} implanted carbon in
+                 silicon",
+  publisher =    "AIP",
+  year =         "1993",
+  journal =      "Journal of Applied Physics",
+  volume =       "74",
+  number =       "6",
+  pages =        "3815--3820",
+  keywords =     "SILICON; ION IMPLANTATION; WAFERS; CARBON IONS; MEV
+                 RANGE 0110; TEM; SIMS; INFRARED SPECTRA; STRAINS; DEPTH
+                 PROFILES",
+  URL =          "http://link.aip.org/link/?JAP/74/3815/1",
+  doi =          "10.1063/1.354474",
+  notes =        "c at interstitial location for rt implantation in si",
+}
+
 @Article{strane96,
   title =        "Carbon incorporation into Si at high concentrations by
                  ion implantation and solid phase epitaxy",
@@ -1122,6 +1142,26 @@
   notes =        "c diffusion due to si self-interstitials",
 }
 
+@Article{strane93,
+  author =       "J. W. Strane and H. J. Stein and S. R. Lee and B. L.
+                 Doyle and S. T. Picraux and J. W. Mayer",
+  collaboration = "",
+  title =        "Metastable SiGe{C} formation by solid phase epitaxy",
+  publisher =    "AIP",
+  year =         "1993",
+  journal =      "Applied Physics Letters",
+  volume =       "63",
+  number =       "20",
+  pages =        "2786--2788",
+  keywords =     "SILICON CARBIDES; GERMANIUM CARBIDES; TERNARY ALLOY
+                 SYSTEMS; EPITAXY; ION IMPLANTATION; METASTABLE STATES;
+                 ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; RUTHERFORD
+                 SCATTERING; XRAY DIFFRACTION; STRAINS; SOLIDPHASE
+                 EPITAXY; AMORPHIZATION",
+  URL =          "http://link.aip.org/link/?APL/63/2786/1",
+  doi =          "10.1063/1.110334",
+}
+
 @Article{strane94,
   author =       "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
                  Picraux and J. K. Watanabe and J. W. Mayer",
@@ -2347,6 +2387,68 @@
   notes =        "solubility of c in c-si, si-c phase diagram",
 }
 
+@Article{hofker74,
+  author =       "W. Hofker and H. Werner and D. Oosthoek and N.
+                 Koeman",
+  affiliation =  "N. V. Philips' Gloeilampenfabrieken Philips Research
+                 Laboratories Eindhoven Netherlands Eindhoven
+                 Netherlands",
+  title =        "Boron implantations in silicon: {A} comparison of
+                 charge carrier and boron concentration profiles",
+  journal =      "Applied Physics A: Materials Science \& Processing",
+  publisher =    "Springer Berlin / Heidelberg",
+  ISSN =         "0947-8396",
+  keyword =      "Physics and Astronomy",
+  pages =        "125--133",
+  volume =       "4",
+  issue =        "2",
+  URL =          "http://dx.doi.org/10.1007/BF00884267",
+  note =         "10.1007/BF00884267",
+  year =         "1974",
+  notes =        "first time ted (only for boron?)",
+}
+
+@Article{michel87,
+  author =       "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
+                 H. Kastl",
+  collaboration = "",
+  title =        "Rapid annealing and the anomalous diffusion of ion
+                 implanted boron into silicon",
+  publisher =    "AIP",
+  year =         "1987",
+  journal =      "Applied Physics Letters",
+  volume =       "50",
+  number =       "7",
+  pages =        "416--418",
+  keywords =     "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
+                 BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
+                 HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
+  URL =          "http://link.aip.org/link/?APL/50/416/1",
+  doi =          "10.1063/1.98160",
+  notes =        "ted of boron in si",
+}
+
+@Article{cowern90,
+  author =       "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
+                 Jos",
+  collaboration = "",
+  title =        "Transient diffusion of ion-implanted {B} in Si: Dose,
+                 time, and matrix dependence of atomic and electrical
+                 profiles",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Journal of Applied Physics",
+  volume =       "68",
+  number =       "12",
+  pages =        "6191--6198",
+  keywords =     "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
+                 DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
+                 CRYSTALS; AMORPHIZATION",
+  URL =          "http://link.aip.org/link/?JAP/68/6191/1",
+  doi =          "10.1063/1.346910",
+  notes =        "ted of boron in si",
+}
+
 @Article{cowern96,
   author =       "N. E. B. Cowern and A. Cacciato and J. S. Custer and
                  F. W. Saris and W. Vandervorst",
@@ -2455,6 +2557,28 @@
                  quasi-direct one",
 }
 
+@Conference{powell93,
+  author =       "A. R. Powell and K. Eberl and F. E. LeGoues and B. A.
+                 Ek and S. S. Iyer",
+  collaboration = "",
+  title =        "Stability of strained Si[sub 1 - y]{C}[sub y] random
+                 alloy layers",
+  publisher =    "AVS",
+  year =         "1993",
+  journal =      "J. Vac. Sci. Technol. B",
+  volume =       "11",
+  number =       "3",
+  pages =        "1064--1068",
+  location =     "Ottawa (Canada)",
+  keywords =     "SILICON ALLOYS; CARBON ALLOYS; STRAINS; THICKNESS;
+                 METASTABLE PHASES; TWINNING; DISLOCATIONS; MOLECULAR
+                 BEAM EPITAXY; EPITAXIAL LAYERS; CRITICAL PHENOMENA;
+                 TEMPERATURE RANGE 400--1000 K; BINARY ALLOYS",
+  URL =          "http://link.aip.org/link/?JVB/11/1064/1",
+  doi =          "10.1116/1.587008",
+  notes =        "substitutional c in si by mbe",
+}
+
 @Article{osten99,
   author =       "H. J. Osten and J. Griesche and S. Scalese",
   collaboration = "",
@@ -2472,7 +2596,7 @@
                  compounds",
   URL =          "http://link.aip.org/link/?APL/74/836/1",
   doi =          "10.1063/1.123384",
-  notes =        "substitutional c in si",
+  notes =        "substitutional c in si by mbe",
 }
 
 @Article{hohenberg64,
@@ -2524,6 +2648,24 @@
                  si, dft",
 }
 
+@Article{yagi02,
+  title =        "Phosphorous Doping of Strain-Induced
+                 Si$_{1-y}${C}$_{y}$ Epitaxial Films Grown\\
+                 by Low-Temperature Chemical Vapor Deposition",
+  author =       "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
+                 Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
+  journal =      "Japanese Journal of Applied Physics",
+  volume =       "41",
+  number =       "Part 1, No. 4B",
+  pages =        "2472--2475",
+  numpages =     "3",
+  year =         "2002",
+  URL =          "http://jjap.jsap.jp/link?JJAP/41/2472/",
+  doi =          "10.1143/JJAP.41.2472",
+  publisher =    "The Japan Society of Applied Physics",
+  notes =        "experimental charge carrier mobility in strained si",
+}
+
 @Article{chang05,
   title =        "Electron Transport Model for Strained Silicon-Carbon
                  Alloy",
@@ -2537,7 +2679,7 @@
   URL =          "http://jjap.ipap.jp/link?JJAP/44/2257/",
   doi =          "10.1143/JJAP.44.2257",
   publisher =    "The Japan Society of Applied Physics",
-  notes =        "enhance of electron mobility in starined si",
+  notes =        "enhance of electron mobility in strained si",
 }
 
 @Article{osten97,