X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=bibdb%2Fbibdb.bib;h=fdea40600e1b6a94e2fa14297f49415d5b9a9c1c;hp=a76665019be181124c4b01ebd6b54a8c81666c33;hb=26d5ef35681908ed195444714706dddb3d26c7ac;hpb=f316cc9ddb491de92198b606180c19aecfc88ddf diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index a766650..fdea406 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,37 @@ notes = "derivation of albe bond order formalism", } +@Article{newman65, + title = "Vibrational absorption of carbon in silicon", + journal = "Journal of Physics and Chemistry of Solids", + volume = "26", + number = "2", + pages = "373--379", + year = "1965", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(65)90166-6", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46RVGM8-1C/2/d50c4df37065a75517d63a04af18d667", + author = "R. C. Newman and J. B. Willis", + notes = "c impurity dissolved as substitutional c in si", +} + +@Article{baker68, + author = "J. A. Baker and T. N. Tucker and N. E. Moyer and R. C. + Buschert", + collaboration = "", + title = "Effect of Carbon on the Lattice Parameter of Silicon", + publisher = "AIP", + year = "1968", + journal = "Journal of Applied Physics", + volume = "39", + number = "9", + pages = "4365--4368", + URL = "http://link.aip.org/link/?JAP/39/4365/1", + doi = "10.1063/1.1656977", + notes = "lattice contraction due to subst c", +} + @Article{bean71, title = "The solubility of carbon in pulled silicon crystals", journal = "Journal of Physics and Chemistry of Solids", @@ -981,6 +1012,39 @@ stress, avoid sic precipitation", } +@Article{foell77, + title = "The formation of swirl defects in silicon by + agglomeration of self-interstitials", + journal = "Journal of Crystal Growth", + volume = "40", + number = "1", + pages = "90--108", + year = "1977", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(77)90034-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BWB4Y-44/2/bddfd69e99369473feebcdc41692dddb", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "b-swirl: si + c interstitial agglomerates, c-si + agglomerate", +} + +@Article{foell81, + title = "Microdefects in silicon and their relation to point + defects", + journal = "Journal of Crystal Growth", + volume = "52", + number = "Part 2", + pages = "907--916", + year = "1981", + note = "", + ISSN = "0022-0248", + doi = "DOI: 10.1016/0022-0248(81)90397-3", + URL = "http://www.sciencedirect.com/science/article/B6TJ6-46MD42X-90/2/a482c31bf9e2faeed71b7109be601078", + author = "H. Föll and U. Gösele and B. O. Kolbesen", + notes = "swirl review", +} + @Article{werner97, author = "P. Werner and S. Eichler and G. Mariani and R. K{\"{o}}gler and W. Skorupa", @@ -1039,6 +1103,25 @@ notes = "c diffusion in si, kick out mechnism", } +@Article{kalejs84, + author = "J. P. Kalejs and L. A. Ladd and U. G{\"{o}}sele", + collaboration = "", + title = "Self-interstitial enhanced carbon diffusion in + silicon", + publisher = "AIP", + year = "1984", + journal = "Applied Physics Letters", + volume = "45", + number = "3", + pages = "268--269", + keywords = "PHOSPHORUS; INTERSTITIALS; SILICON; PHOSPHORUS; + CARBON; DIFFUSION; ANNEALING; ATOM TRANSPORT; VERY HIGH + TEMPERATURE; IMPURITIES", + URL = "http://link.aip.org/link/?APL/45/268/1", + doi = "10.1063/1.95167", + notes = "c diffusion due to si self-interstitials", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -1171,7 +1254,7 @@ keywords = "Molecular dynamics simulations", } -@Article{zirkelbach10a, +@Article{zirkelbach10, title = "Defects in carbon implanted silicon calculated by classical potentials and first-principles methods", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. @@ -1187,29 +1270,97 @@ publisher = "American Physical Society", } -@Article{zirkelbach10b, +@Article{zirkelbach11a, title = "First principles study of defects in carbon implanted silicon", journal = "to be published", volume = "", number = "", pages = "", - year = "2010", - author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. - K. N. Lindner and W. G. Schmidt and E. Rauls", + year = "2011", + author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner + and W. G. Schmidt and E. Rauls", } -@Article{zirkelbach10c, +@Article{zirkelbach11b, title = "...", journal = "to be published", volume = "", number = "", pages = "", - year = "2010", + year = "2011", author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J. K. N. Lindner and W. G. Schmidt and E. Rauls", } +@Article{lindner95, + author = "J. K. N. Lindner and A. Frohnwieser and B. + Rauschenbach and B. Stritzker", + title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C} + Layers in Silicon", + journal = "MRS Online Proceedings Library", + volume = "354", + number = "", + pages = "171", + year = "1994", + doi = "10.1557/PROC-354-171", + URL = "http://dx.doi.org/10.1557/PROC-354-171", + eprint = "http://journals.cambridge.org/article_S1946427400420853", + notes = "first time ibs at moderate temperatures", +} + +@Article{lindner96, + title = "Formation of buried epitaxial silicon carbide layers + in silicon by ion beam synthesis", + journal = "Materials Chemistry and Physics", + volume = "46", + number = "2-3", + pages = "147--155", + year = "1996", + note = "", + ISSN = "0254-0584", + doi = "DOI: 10.1016/S0254-0584(97)80008-9", + URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7", + author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B. + Götz and A. Frohnwieser and B. Rauschenbach and B. + Stritzker", + notes = "dose window", +} + +@Article{calcagno96, + title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by + ion implantation", + journal = "Nuclear Instruments and Methods in Physics Research + Section B: Beam Interactions with Materials and Atoms", + volume = "120", + number = "1-4", + pages = "121--124", + year = "1996", + note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on + New Trends in Ion Beam Processing of Materials", + ISSN = "0168-583X", + doi = "DOI: 10.1016/S0168-583X(96)00492-2", + URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d", + author = "L. Calcagno and G. Compagnini and G. Foti and M. G. + Grimaldi and P. Musumeci", + notes = "dose window, graphitic bonds", +} + +@Article{lindner98, + title = "Mechanisms of Si{C} Formation in the Ion Beam + Synthesis of 3{C}-Si{C} Layers in Silicon", + journal = "Materials Science Forum", + volume = "264-268", + pages = "215--218", + year = "1998", + note = "", + doi = "10.4028/www.scientific.net/MSF.264-268.215", + URL = "http://www.scientific.net/MSF.264-268.215", + author = "J. K. N. Lindner and W. Reiber and B. Stritzker", + notes = "intermediate temperature for sharp interface + good + crystallinity", +} + @Article{lindner99, title = "Controlling the density distribution of Si{C} nanocrystals for the ion beam synthesis of buried Si{C} @@ -2075,8 +2226,10 @@ } @Article{akimchenko80, - author = "I. P. Akimchenko and K. V. Kisseleva and V. V. Krasnopevtsev and A. G. Touryanski and V. S. Vavilov", - title = "Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions", + author = "I. P. Akimchenko and K. V. Kisseleva and V. V. + Krasnopevtsev and A. G. Touryanski and V. S. Vavilov", + title = "Structure and optical properties of silicon implanted + by high doses of 70 and 310 ke{V} carbon ions", publisher = "Taylor \& Francis", year = "1980", journal = "Radiation Effects", @@ -2087,6 +2240,75 @@ notes = "3c-sic nucleation by thermal spikes", } +@Article{kimura81, + title = "Structure and annealing properties of silicon carbide + thin layers formed by implantation of carbon ions in + silicon", + journal = "Thin Solid Films", + volume = "81", + number = "4", + pages = "319--327", + year = "1981", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(81)90516-2", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80", + author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi + Yugo", +} + +@Article{kimura82, + title = "Characteristics of the synthesis of [beta]-Si{C} by + the implantation of carbon ions into silicon", + journal = "Thin Solid Films", + volume = "94", + number = "3", + pages = "191--198", + year = "1982", + note = "", + ISSN = "0040-6090", + doi = "DOI: 10.1016/0040-6090(82)90295-4", + URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd", + author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi + Yugo", +} + +@Article{reeson86, + author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and + C. D. Meekison and C. Marsh and G. R. Booker and R. J. + Chater and J. A. Iulner and J. Davis", + title = "Formation mechanisms and structures of insulating + compounds formed in silicon by ion beam synthesis", + publisher = "Taylor \& Francis", + year = "1986", + journal = "Radiation Effects", + volume = "99", + number = "1", + pages = "71--81", + URL = "http://www.informaworld.com/10.1080/00337578608209614", + notes = "ibs, comparison with sio and sin, higher temp or + time", +} + +@Article{reeson87, + author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and + J. Davis and G. E. Celler", + collaboration = "", + title = "Formation of buried layers of beta-Si{C} using ion + beam synthesis and incoherent lamp annealing", + publisher = "AIP", + year = "1987", + journal = "Appl. Phys. Lett.", + volume = "51", + number = "26", + pages = "2242--2244", + keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION + IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS", + URL = "http://link.aip.org/link/?APL/51/2242/1", + doi = "10.1063/1.98953", + notes = "nice tem images, sic by ibs", +} + @Article{martin90, author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff and M. Olivier and A. M. Papon and G. Rolland", @@ -2110,25 +2332,6 @@ temepratures", } -@Article{reeson87, - author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and - J. Davis and G. E. Celler", - collaboration = "", - title = "Formation of buried layers of beta-Si{C} using ion - beam synthesis and incoherent lamp annealing", - publisher = "AIP", - year = "1987", - journal = "Appl. Phys. Lett.", - volume = "51", - number = "26", - pages = "2242--2244", - keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION - IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS", - URL = "http://link.aip.org/link/?APL/51/2242/1", - doi = "10.1063/1.98953", - notes = "nice tem images, sic by ibs", -} - @Article{scace59, author = "R. I. Scace and G. A. Slack", collaboration = "", @@ -2891,7 +3094,7 @@ Ion `Hot' Implantation", author = "Masahiro Deguchi and Makoto Kitabatake and Takashi Hirao and Naoki Arai and Tomio Izumi", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "31", number = "Part 1, No. 2A", pages = "343--347", @@ -3247,7 +3450,8 @@ pages = "S2643", URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004", year = "2004", - notes = "ab inito init, vibrational modes, c defect in si", + notes = "ab inito dft intro, vibrational modes, c defect in + si", } @Article{park02, @@ -3992,6 +4196,21 @@ eprint = "http://journals.cambridge.org/article_S194642740054367X", } +@Article{newman61, + title = "The diffusivity of carbon in silicon", + journal = "Journal of Physics and Chemistry of Solids", + volume = "19", + number = "3-4", + pages = "230--234", + year = "1961", + note = "", + ISSN = "0022-3697", + doi = "DOI: 10.1016/0022-3697(61)90032-4", + URL = "http://www.sciencedirect.com/science/article/B6TXR-46M72R1-4D/2/9235472e4c0a95bf7b995769474f5fbd", + author = "R. C. Newman and J. Wakefield", + notes = "diffusivity of substitutional c in si", +} + @Article{goesele85, author = "U. Gösele", title = "The Role of Carbon and Point Defects in Silicon", @@ -4004,3 +4223,42 @@ URL = "http://dx.doi.org/10.1557/PROC-59-419", eprint = "http://journals.cambridge.org/article_S1946427400543681", } + +@Article{puska98, + title = "Convergence of supercell calculations for point + defects in semiconductors: Vacancy in silicon", + author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R. + M. Nieminen", + journal = "Phys. Rev. B", + volume = "58", + number = "3", + pages = "1318--1325", + numpages = "7", + year = "1998", + month = jul, + doi = "10.1103/PhysRevB.58.1318", + publisher = "American Physical Society", + notes = "convergence k point supercell size, vacancy in + silicon", +} + +@Article{serre95, + author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A. + Romano-Rodr\'{\i}guez and J. R. Morante and R. + K{\"{o}}gler and W. Skorupa", + collaboration = "", + title = "Spectroscopic characterization of phases formed by + high-dose carbon ion implantation in silicon", + publisher = "AIP", + year = "1995", + journal = "Journal of Applied Physics", + volume = "77", + number = "7", + pages = "2978--2984", + keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS; + FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA; + PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE + DEPENDENCE; PRECIPITATES; ANNEALING", + URL = "http://link.aip.org/link/?JAP/77/2978/1", + doi = "10.1063/1.358714", +}