X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=nlsop%2Fposter%2Fnlsop_ibmm2006.tex;fp=nlsop%2Fposter%2Fnlsop_ibmm2006.tex;h=098893771024e247f4e48076db03a6011bfcea13;hp=1188e13d5365c5c2420a76380df8e40c85b2f89f;hb=ffbb152419ec0697b3e12a77165307a35c056370;hpb=5ef6b653a12529e75490706c276f836303dcca66

diff --git a/nlsop/poster/nlsop_ibmm2006.tex b/nlsop/poster/nlsop_ibmm2006.tex
index 1188e13..0988937 100644
--- a/nlsop/poster/nlsop_ibmm2006.tex
+++ b/nlsop/poster/nlsop_ibmm2006.tex
@@ -171,7 +171,7 @@
 	}
 	%\hfill
 }}
-\hfill\mbox{}\\[0.1cm]
+\hfill\mbox{}\\[0cm]
 
 %\vspace*{1.3cm}
 
@@ -224,10 +224,12 @@
       $\rightarrow$ {\bf amourphous} precipitates
 \item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
       $\rightarrow$ {\bf lateral strain} (black arrows)
+\item implantation range near surface\\
+      $\rightarrow$ {\bf ralaxation} of {\bf vertical strain component}
 \item reduction of the carbon supersaturation in $c-Si$\\
       $\rightarrow$ {\bf carbon diffusion} into amorphous volumina
       (white arrows)
-\item lateral strain (vertical component relaxating)\\
+\item remaining lateral strain\\
       $\rightarrow$ {\bf strain induced} lateral amorphization
 			\end{itemize}
 	\end{kasten}
@@ -257,9 +259,9 @@
 
 		\subsubsection*{3.2.1 Amorphization/Recrystallization}
 			\begin{itemize}
-				\item random numbers according to the nuclear
-				      energy loss to determine the volume hit
-				      by an impinging ion
+				\item random numbers distributed according to 
+				      the nuclear energy loss to determine the
+				      volume hit by an impinging ion
 				\item compute local probability for
 				      amorphization:\\
 \[
@@ -289,8 +291,8 @@ Three contributions to the amorphization process controlled by:
 
 		\subsubsection*{3.2.2 Carbon incorporation}
 			\begin{itemize}
-				\item random numbers according to the
-				      implantation profile to determine the
+				\item random numbers distributed according to
+				      the implantation profile to determine the
 				      incorporation volume
 				\item increase the amount of carbon atoms in
 				      that volume
@@ -353,9 +355,10 @@ Three contributions to the amorphization process controlled by:
 			\makebox[11cm]{%
 				\parbox[c]{5cm}{%
 			\begin{itemize}
-				\item multiple implantation \\ steps
+				\item multiple implantation\\
+				      steps
 				\item energies: $180$ - $10 \, keV$
-				\item higher temeprature\\
+				\item temeprature: $500 ^{\circ} \mathrm{C}$\\
 				      $\rightarrow$ prevent amorphization
 			\end{itemize}
 			$\Rightarrow$ nearly constant carbon distribution
@@ -370,14 +373,17 @@ Three contributions to the amorphization process controlled by:
 			\begin{center}              
 			\includegraphics[width=10cm]{multiple_impl_e.eps}
 			\end{center}
+			Starting point for materials with high photoluminescence.\\
+			Dihu Chen et al. Opt. Mater. 23 (2003) 65.
 
 	\end{kasten}
 	\begin{kasten}
-		\section*{5 \hspace{0.1cm} {\color{red} Conclusions}}
+		\section*{5 \hspace{0.1cm} {\color{red} Conclusion}}
 			\begin{itemize}
 		\item selforganized nanometric precipitates by ion irradiation
 		\item model describing the seoforganization process
-		\item precipitate structures traceable by simulation
+		\item set of parameters reproducing the experimental observations
+		\item precipitation process traceable by simulation
 		\item detailed structural/compositional information
 		\item recipe for broad distributions of lamellar structure
 			\end{itemize}