X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=nlsop%2Fposter%2Fnlsop_ibmm2006_ver2.tex;h=fc3305b8a376fc2ba1fa18fcee218b4195cd5b82;hp=a7e6d0b5c388698c1977c80b15c428cbd58539a8;hb=b0576a7e5bd39714ade890016847e91b83abd9f5;hpb=9fc0e728cf163164bd3872b00b630800c3e5f055

diff --git a/nlsop/poster/nlsop_ibmm2006_ver2.tex b/nlsop/poster/nlsop_ibmm2006_ver2.tex
index a7e6d0b..fc3305b 100644
--- a/nlsop/poster/nlsop_ibmm2006_ver2.tex
+++ b/nlsop/poster/nlsop_ibmm2006_ver2.tex
@@ -6,7 +6,7 @@
 
 \begin{document}
 
-\hyphenation{pho-to-lu-mi-nescence}
+\hyphenation{pho-to-lu-mi-nescence in-clu-sions}
 
 % Fliessenden Hintergrund von RGB-Farbe 1. .98 .98 nach 1. .85 .85
 % und wieder nach  1. .98 .98 (1. .85 .85 wird nach 0.1=10% des Hinter-
@@ -97,7 +97,7 @@
       $\rightarrow$ {\bf Carbon induced} nucleation of spherical
       $SiC_x$-precipitates
 \item High interfacial energy between $3C-SiC$ and $c-Si$\\
-      $\rightarrow$ {\bf Amourphous} precipitates
+      $\rightarrow$ {\bf Amorphous} precipitates
 \item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
       $\rightarrow$ {\bf Lateral strain} (black arrows)
 \item Implantation range near surface\\
@@ -150,7 +150,14 @@
     {\bf
     The simulation algorithm consists of the following three parts looped 
     $s$ times corresponding to a dose
-    $D=s/(64\times64\times(3 \, nm)^2)$:}
+    $D=s/(64\times64\times(3 \, nm)^2)$:}\\
+\begin{minipage}{0.10\textwidth}
+	\begin{picture}(0,0)(0,600)
+		\includegraphics[height=40.0cm]{loop-arrow_ver2.eps}
+	\end{picture}%
+\end{minipage}
+\begin{minipage}{0.90\textwidth}
+	\vspace{1cm}
 	\subsection*{1. Amorphisation/Recrystallisation}
 	\begin{itemize}
 		\item random numbers distributed according to
@@ -203,6 +210,9 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
 			      that volume
 		\end{itemize}
 	\subsection*{3. Diffusion/Sputtering}
+		{\bf
+		Simulation parameters $d_v$, $d_r$ and $n$ control the
+		diffusion and sputtering process.}
 		\begin{itemize}
 			\item every $d_v$ steps transfer of a fraction $d_r$
 			      of carbon atoms from crystalline volumina to
@@ -211,14 +221,9 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
                               shift remaining cells $3 \, nm$ up and insert
                               an empty, crystalline $3 \, nm$ bottom layer
 		\end{itemize}
-		\begin{picture}(0,0)(+40,-32)
-			\includegraphics[height=39.2cm]{loop-arrow_ver2.eps}
-		\end{picture}%
-		{\bf
-		Simulation parameters $d_v$, $d_r$ and $n$ control the
-		diffusion and sputtering process.}
+\end{minipage}%
   \end{pbox}
-  \vspace{-1.2cm}
+  \vspace{-0.7cm}
   \begin{pbox}
 	\section*{Comparison of experiment and simulation}
 	 \begin{center}
@@ -248,6 +253,8 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
 	\section*{Structural/compositional information}
 	\begin{minipage}[t]{0.57\textwidth}
 		\includegraphics[height=15cm=]{ac_cconc_ver2_e.eps}
+		\begin{minipage}[t]{0.9\textwidth}
+		\vspace{-0.45cm}
 		\begin{itemize}
 			\item Fluctuation of the carbon concentration in the
 			      region of the lamellae
@@ -255,6 +262,7 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
 			      implantation conditions between $8$ and
 			      $10 \, at. \%$
 		\end{itemize}
+		\end{minipage}%
 	\end{minipage}%
 	\begin{minipage}[t]{0.43\textwidth}
 		\includegraphics[height=15cm]{97_98_ng_e.eps}