X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=nlsop%2Fposter%2Fnlsop_ibmm2006_ver2.tex;h=fc3305b8a376fc2ba1fa18fcee218b4195cd5b82;hp=bc6c1aca73d2b5e6e21e568de412f242c25c4135;hb=b0576a7e5bd39714ade890016847e91b83abd9f5;hpb=66e63148efc76d3a233b77c6d7cbd96c6479f90f diff --git a/nlsop/poster/nlsop_ibmm2006_ver2.tex b/nlsop/poster/nlsop_ibmm2006_ver2.tex index bc6c1ac..fc3305b 100644 --- a/nlsop/poster/nlsop_ibmm2006_ver2.tex +++ b/nlsop/poster/nlsop_ibmm2006_ver2.tex @@ -6,7 +6,7 @@ \begin{document} -\hyphenation{pho-to-lu-mi-nescence} +\hyphenation{pho-to-lu-mi-nescence in-clu-sions} % Fliessenden Hintergrund von RGB-Farbe 1. .98 .98 nach 1. .85 .85 % und wieder nach 1. .98 .98 (1. .85 .85 wird nach 0.1=10% des Hinter- @@ -14,14 +14,15 @@ % Achtung Werte unter .8 verbrauchen zu viel Tinte!!! %\background{.95 .95 1.}{.78 .78 1.}{0.05} -\background{.50 .50 .50}{.85 .85 .85}{0.5} +%\background{.50 .50 .50}{.85 .85 .85}{0.5} +\background{.40 .48 .71}{.99 .99 .99}{0.5} %\newrgbcolor{blue1}{.9 .9 1.} % Groesse der einzelnen Spalten als Anteil der Gesamt-Textbreite \renewcommand{\columnfrac}{.31} % header -\vspace{-1.5cm} +\vspace{-1.2cm} \begin{header} \begin{minipage} {.13\textwidth} \includegraphics[height=11cm]{uni-logo.eps} @@ -43,12 +44,12 @@ \begin{poster} -\vspace{-1.1cm} +\vspace{-0.35cm} \begin{pcolumn} \begin{pbox} \section*{Motivation} {\bf - Experimentally observerd seflorganisation process at high-dose carbon + Experimentally observed selforganisation process at high-dose carbon implantations under certain implantation conditions.} \begin{itemize} \item Regularly spaced, nanometric spherical and lamellar @@ -56,7 +57,7 @@ \begin{center} \includegraphics[width=20cm]{k393abild1_e.eps} \end{center} - Cross-section TEM bright-field image:\\ + Cross-section TEM bright-field images:\\ $180 \, keV$ $C^+ \rightarrow Si$, $T_i=150 \, ^{\circ} \mathrm{C}$, Dose: $4.3 \times 10^{17} \, cm^{-2}$\\ @@ -81,7 +82,7 @@ E. D. Specht et al., Nucl. Instr. and Meth. B 84 (1994) 323.\\ M. Ishimaru et al., Nucl. Instr. and Meth. B 166-167 (2000) 390.} \end{pbox} - \vspace{-1.5cm} + \vspace{-1.4cm} \begin{pbox} \section*{Model} {\bf @@ -96,11 +97,11 @@ $\rightarrow$ {\bf Carbon induced} nucleation of spherical $SiC_x$-precipitates \item High interfacial energy between $3C-SiC$ and $c-Si$\\ - $\rightarrow$ {\bf Amourphous} precipitates + $\rightarrow$ {\bf Amorphous} precipitates \item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\ $\rightarrow$ {\bf Lateral strain} (black arrows) \item Implantation range near surface\\ - $\rightarrow$ {\bf Ralaxation} of {\bf vertical strain component} + $\rightarrow$ {\bf Relaxation} of {\bf vertical strain component} \item Reduction of the carbon supersaturation in $c-Si$\\ $\rightarrow$ {\bf Carbon diffusion} into amorphous volumina (white arrows) @@ -149,7 +150,14 @@ {\bf The simulation algorithm consists of the following three parts looped $s$ times corresponding to a dose - $D=s/(64\times64\times(3 \, nm)^2)$:} + $D=s/(64\times64\times(3 \, nm)^2)$:}\\ +\begin{minipage}{0.10\textwidth} + \begin{picture}(0,0)(0,600) + \includegraphics[height=40.0cm]{loop-arrow_ver2.eps} + \end{picture}% +\end{minipage} +\begin{minipage}{0.90\textwidth} + \vspace{1cm} \subsection*{1. Amorphisation/Recrystallisation} \begin{itemize} \item random numbers distributed according to @@ -202,6 +210,9 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\ that volume \end{itemize} \subsection*{3. Diffusion/Sputtering} + {\bf + Simulation parameters $d_v$, $d_r$ and $n$ control the + diffusion and sputtering process.} \begin{itemize} \item every $d_v$ steps transfer of a fraction $d_r$ of carbon atoms from crystalline volumina to @@ -210,14 +221,9 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\ shift remaining cells $3 \, nm$ up and insert an empty, crystalline $3 \, nm$ bottom layer \end{itemize} - \begin{picture}(0,0)(+40,-32) - \includegraphics[height=39.2cm]{loop-arrow.eps} - \end{picture}% - {\bf - Simulation parameters $d_v$, $d_r$ and $n$ control the - diffusion and sputtering process.} +\end{minipage}% \end{pbox} - \vspace{-0.27cm} + \vspace{-0.7cm} \begin{pbox} \section*{Comparison of experiment and simulation} \begin{center} @@ -247,6 +253,8 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\ \section*{Structural/compositional information} \begin{minipage}[t]{0.57\textwidth} \includegraphics[height=15cm=]{ac_cconc_ver2_e.eps} + \begin{minipage}[t]{0.9\textwidth} + \vspace{-0.45cm} \begin{itemize} \item Fluctuation of the carbon concentration in the region of the lamellae @@ -254,6 +262,7 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\ implantation conditions between $8$ and $10 \, at. \%$ \end{itemize} + \end{minipage}% \end{minipage}% \begin{minipage}[t]{0.43\textwidth} \includegraphics[height=15cm]{97_98_ng_e.eps} @@ -267,7 +276,7 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\ \end{itemize} \end{minipage} \end{pbox} - \vspace{-1.5cm} + \vspace{-1.4cm} \begin{pbox} \section*{Recipe for thick films of ordered lamellae} \begin{minipage}{0.33\textwidth} @@ -312,7 +321,7 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\ photoluminescence}\\ {\scriptsize Dihu Chen et al. Opt. Mater. 23 (2003) 65.} \end{pbox} - \vspace{-1.5cm} + \vspace{-1.4cm} \begin{pbox} \section*{Conclusions} \begin{itemize} @@ -332,9 +341,10 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\ of lamellar structure \end{itemize} \end{pbox} - \vspace{-1.5cm} + \vspace{-1.4cm} \begin{pbox} - \section*{Publications} + %\section*{Literature} + {\bf Literature}\\ {\scriptsize F. Zirkelbach, M. H"aberlen, J. K. N. Lindner, B. Stritzker. Comp. Mater. Sci. 33 (2005) 310.\\