X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fpublications%2Fdefect_combos.tex;h=07c196f4d5d1e0384faba646b692ea963ff9c7c1;hp=d36744f1a5e5f8f2fdff8b1e1d13866bab631b48;hb=09fb8209a99f5cbd1618dc997121d60a2c76e629;hpb=03cef397e4d519cef40b385c196e3a9188a7fe2e

diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index d36744f..07c196f 100644
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -34,8 +34,8 @@ We investigated the migration mechanism of a carbon \hkl<1 0 0> interstitial and
 The influence of a nearby vacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been investigated systematically.
 Interactions of various combinations of defects have been characterized including a couple of selected migration pathways within these configurations.
 Almost all of the investigated pairs of defects tend to agglomerate allowing for a reduction in strain.
-The formation of structures involving strong carbon-carbon bonds was found to occur very unlikely.
-In contrast, substitutional carbon was found to occur in all probability.
+The formation of structures involving strong carbon-carbon bonds has been found to occur very unlikely.
+In contrast, substitutional carbon occurs in all probability.
 A long range capture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies.
 A rather small capture radius has been identified for substitutional carbon and silicon self-interstitials.
 We derive conclusions on the precipitation mechanism of silicon carbide in bulk silicon and discuss conformability to experimental findings.