X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fpublications%2Fdefect_combos.tex;h=947c86eab28e1b2b00281eb4027dc1ca437b6c6a;hp=fa11e28457c271587f1783f5a2cb3358360af37e;hb=82e148b83ec43f68f1954ba35ccc186ecb374df6;hpb=458bb9704f8caee34798c42f9760554e86d3bba2

diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex
index fa11e28..947c86e 100644
--- a/posic/publications/defect_combos.tex
+++ b/posic/publications/defect_combos.tex
@@ -178,7 +178,7 @@ No other configuration, within the ones that are mentioned, is affected.
 
 Concerning the mobility of the ground state Si$_{\text{i}}$, an activation energy of \unit[0.67]{eV} was found for the Si$_{\text{i}}$ \hkl[0 1 -1] to \hkl[1 1 0] DB configuration located at the next neighbored Si lattice site in \hkl[1 1 -1] direction.
 Further investigations revealed a barrier of \unit[0.94]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to Si$_{\text{i}}$ H, \unit[0.53]{eV} for the Si$_{\text{i}}$ \hkl[1 1 0] DB to Si$_{\text{i}}$ T and \unit[0.35]{eV} for the Si$_{\text{i}}$ H to Si$_{\text{i}}$ T transition.
-The obtained values are within the same order of magnitude than values derived from other ab initio studies\cite{bloechl93,sahli95}.
+The obtained values are within the same order of magnitude than values derived from other ab initio studies\cite{bloechl93,sahli05}.
 % look for values in literature for neutraly charged Si_i diffusion
 % T seems to constitute a saddle point according to migration calculations