X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fpublications%2Fsic_prec_reply01.txt;h=502510a2d2ff1b6b5e7c66d919acfabd8cf04c59;hp=648bac361d3218de0b1060c494c122bce8e5e9e6;hb=94afb95da60b2cdbcd5c328661715eda4416de19;hpb=fdf1f976b879c9b7403c1d76c9906aa850614862

diff --git a/posic/publications/sic_prec_reply01.txt b/posic/publications/sic_prec_reply01.txt
index 648bac3..502510a 100644
--- a/posic/publications/sic_prec_reply01.txt
+++ b/posic/publications/sic_prec_reply01.txt
@@ -4,6 +4,12 @@ Re: BC11912
     silicon carbide precipitation in silicon
     by F. Zirkelbach, B. Stritzker, K. Nordlund, et al.
 
+and related to
+
+Re: BA11443
+    First-principles study of defects in carbon-implanted silicon
+    by F. Zirkelbach, B. Stritzker, J. K. N. Lindner, et al.
+
 
 Dear Dr. Dahal,
 
@@ -12,13 +18,13 @@ manuscript.
 
 The referee
 
-  i) requests a clarification of the relation of the present
+  i) has reservations about the methodology used in the present work
+ ii) requests a clarification of the relation of the present
      manuscript to a previous submission of ours (BA11443)
- ii) has reservations about the methodology used in the present work
 iii) suggests to possibly combine some account of the present
      work with the previous submission BA11443.
 
-What concerns (ii), the classical potential molecular dynamics used in
+What concerns (i), the classical potential molecular dynamics used in
 the present work certainly has limitations. Precisely in order to
 quantify these limitations, a comparison is made with ab initio
 calculations as well as earlier first-principles work (BA11443).
@@ -28,7 +34,7 @@ silicon carbide precipitation on length and time scales which are not
 accessible to more accurate ab initio techniques. A detailed response
 to the referee's concerns is given below.
 
-Concerning (i) and (iii), the ab initio work BA11443 is a
+Concerning (ii) and (iii), the ab initio work BA11443 is a
 self-contained and comprehensive manuscript, which already now has an
 appreciable length. It is a first-principles study on defects in
 carbon-implanted silicon. In contrast, the present study mainly