X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Ftalks%2Fdefense.tex;h=5ac85d61c7c72c105c2a5991e4ea3153c1787acb;hp=ba3da3245ed5fdba181ef1401f654fd7052acc42;hb=b75fa3911c13c302a90ce982430815d709159419;hpb=8bbe73d014019b72005b776e372293389f197c5b

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index ba3da32..5ac85d6 100644
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -248,101 +248,6 @@ E\\
 
 % fabrication
 
-\ifnum1=0
-\begin{slide}
-
-\headphd
- {\large\bf
-  Fabrication of silicon carbide
- }
-
- \small
- 
- \vspace{2pt}
-
-\begin{center}
- {\color{gray}
- \emph{Silicon carbide --- Born from the stars, perfected on earth.}
- }
-\end{center}
-
-\vspace{2pt}
-
-SiC thin films by MBE \& CVD
-\begin{itemize}
- \item Much progress achieved in homo/heteroepitaxial SiC thin film growth
- \item \underline{Commercially available} semiconductor power devices based on
-       \underline{\foreignlanguage{greek}{a}-SiC}
- \item Production of favored \underline{3C-SiC} material
-       \underline{less advanced}
- \item Quality and size not yet sufficient
-\end{itemize}
-\begin{picture}(0,0)(-310,-20)
-  \includegraphics[width=2.0cm]{cree.eps}
-\end{picture}
-
-\vspace{-0.5cm}
-
-%\begin{center}
-%\color{red}
-%\framebox{
-%{\footnotesize\color{black}
-% Mismatch in \underline{thermal expansion coeefficient}
-% and \underline{lattice parameter} w.r.t. substrate
-%}
-%}
-%\end{center}
-
-\vspace{0.1cm}
-
-{\bf Alternative approach}\\
-Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
-
-\vspace{0.1cm}
-
-\scriptsize
-
-\framebox{
-\begin{minipage}{3.15cm}
- \begin{center}
-\includegraphics[width=3cm]{imp.eps}\\
- {\tiny
-  Carbon implantation
- }
- \end{center}
-\end{minipage}
-\begin{minipage}{3.15cm}
- \begin{center}
-\includegraphics[width=3cm]{annealing.eps}\\
- {\tiny
- Postannealing at $>$ \degc{1200}
- }
- \end{center}
-\end{minipage}
-}
-\begin{minipage}{5.5cm}
- \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm]
- \begin{center}
- {\tiny
-  XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
- }
- \end{center}
-\end{minipage}
-
-%\begin{minipage}{5.5cm}
-%\begin{center}
-%{\footnotesize
-%No surface bending effects\\
-%High areal homogenity\\[0.1cm]
-%$\Downarrow$\\[0.1cm]
-%Synthesis of large area SiC films possible
-%}
-%\end{center}
-%\end{minipage}
-
-\end{slide}
-\fi
-
 \begin{slide}
 
 \headphd
@@ -379,32 +284,34 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 \end{center}
 \end{minipage}
 \begin{minipage}{5cm}
+\begin{center}
 \begin{pspicture}(0,0)(0,0)
 \rnode{box}{
 \psframebox[fillstyle=solid,fillcolor=white,linecolor=blue,linestyle=solid]{
-\begin{minipage}{5.3cm}
+\begin{minipage}{3.3cm}
  \begin{center}
  {\color{blue}
   3C-SiC precipitation\\
   not yet fully understood
  }
  \end{center}
- \vspace*{0.1cm}
- \renewcommand\labelitemi{$\Rightarrow$}
- Details of the SiC precipitation
- \begin{itemize}
-  \item significant technological progress\\
-        in SiC thin film formation
-  \item perspectives for processes relying\\
-        upon prevention of SiC precipitation
- \end{itemize}
+% \vspace*{0.1cm}
+% \renewcommand\labelitemi{$\Rightarrow$}
+% Details of the SiC precipitation
+% \begin{itemize}
+%  \item significant technological progress\\
+%        in SiC thin film formation
+%  \item perspectives for processes relying\\
+%        upon prevention of SiC precipitation
+% \end{itemize}
 \end{minipage}
 }}
-\rput(-6.8,5.5){\pnode{h0}}
-\rput(-3.0,5.5){\pnode{h1}}
+\rput(-5.3,5.5){\pnode{h0}}
+\rput(-1.95,5.5){\pnode{h1}}
 \ncline[linecolor=blue]{-}{h0}{h1}
 \ncline[linecolor=blue]{->}{h1}{box}
 \end{pspicture}
+\end{center}
 \end{minipage}
 
 \end{slide}
@@ -652,7 +559,7 @@ r = \unit[2--4]{nm}
       {\tiny\color{gray}/Strane~et~al./Guedj~et~al./}
  \begin{itemize}
   \item Initial {\color{blue}coherent} SiC structures (tensile strain)
-  \item Incoherent SiC (strain relaxation)
+  \item Incoherent SiC nanocrystals (strain relaxation)
  \end{itemize}
 \end{itemize}
 \vspace{0.1cm}
@@ -846,13 +753,13 @@ $
 \end{minipage}
 \end{minipage}
 
-\vspace{0.2cm}
+\vspace{0.3cm}
 
-\begin{minipage}[b]{6cm}
+\begin{minipage}[t]{6cm}
 {\bf Defect formation energy}\\
 \framebox{
-$E_{\text{f}}=E-\sum_i N_i\mu_i$}\\[0.1cm]
-Particle reservoir: Si \& SiC\\[0.2cm]
+$E_{\text{f}}=E-\sum_i N_i\mu_i$}\\[0.5cm]
+%Particle reservoir: Si \& SiC\\[0.2cm]
 {\bf Binding energy}\\
 \framebox{
 $
@@ -866,7 +773,8 @@ $
 $E_{\text{b}}<0$: energetically favorable configuration\\
 $E_{\text{b}}\rightarrow 0$: non-interacting, isolated defects\\
 \end{minipage}
-\begin{minipage}[b]{6cm}
+\begin{minipage}[t]{6cm}
+\vspace{1.4cm}
 {\bf Migration barrier}
 \footnotesize
 \begin{itemize}
@@ -1633,7 +1541,7 @@ Amorphous SiC-like phase
 \begin{minipage}{6cm}
 \centering
 Formation of \ci{} dumbbells\\
-C atoms in proper 3C-SiC distance first
+C atoms separated as expected in 3C-SiC
 \end{minipage}
 }}
 \end{pspicture}\\[0.1cm]
@@ -1787,7 +1695,7 @@ equilibrium properties
   \item Peak at 0.3 nm slightly shifted\\[0.05cm]
         $\searrow$ \ci{} combinations (dashed arrows)\\
         $\nearrow$ \ci{} \hkl<1 0 0> \& {\color{blue}\cs{} combinations} (|)\\
-        $\nearrow$ \ci{} \hkl<1 0 0> \& \cs{} combinations (|)\\[0.05cm]
+        $\nearrow$ \ci{} pure \cs{} combinations ($\downarrow$)\\[0.05cm]
         Range [|-$\downarrow$]: {\color{blue}\cs{} \& \cs{} with nearby \si}
  \end{itemize}
 \end{minipage}
@@ -1820,7 +1728,8 @@ equilibrium properties
  \underline{Si-C bonds:}
  \begin{itemize}
   \item Vanishing cut-off artifact (above $1650\,^{\circ}\mathrm{C}$)
-  \item Structural change: C-Si \hkl<1 0 0> $\rightarrow$ C$_{\text{sub}}$
+  \item Structural change: \ci{} \hkl<1 0 0> DB $\rightarrow$
+        {\color{blue}\cs{}}
  \end{itemize}
  \underline{Si-Si bonds:}
  {\color{blue}Si-C$_{\text{sub}}$-Si} along \hkl<1 1 0>
@@ -1828,11 +1737,10 @@ equilibrium properties
  \underline{C-C bonds:}
  \begin{itemize}
   \item C-C next neighbour pairs reduced (mandatory)
-  \item Peak at 0.3 nm slightly shifted
   \item Peak at 0.3 nm slightly shifted\\[0.05cm]
         $\searrow$ \ci{} combinations (dashed arrows)\\
         $\nearrow$ \ci{} \hkl<1 0 0> \& {\color{blue}\cs{} combinations} (|)\\
-        $\nearrow$ \ci{} \hkl<1 0 0> \& \cs{} combinations (|)\\[0.05cm]
+        $\nearrow$ \ci{} pure \cs{} combinations ($\downarrow$)\\[0.05cm]
         Range [|-$\downarrow$]: {\color{blue}\cs{} \& \cs{} with nearby \si}
  \end{itemize}
 \end{minipage}
@@ -1854,9 +1762,14 @@ equilibrium properties
 {\Huge$\lightning$} {\color{red}\ci{}} --- vs --- {\color{blue}\cs{}} {\Huge$\lightning$}\\
 \end{center}
 \begin{itemize}
-\item Stretched coherent SiC structures\\
-$\Rightarrow$ Precipitation process involves {\color{blue}\cs}
-\item Role of \si{}
+\item Stretched coherent SiC structures directly observed\\
+\psframebox[linecolor=blue,linewidth=0.05cm]{
+\begin{minipage}{7cm}
+\centering
+\cs{} involved in the precipitation mechanism\\
+\end{minipage}
+}
+\item Emission of \si{} serves several needs:
       \begin{itemize}
        \item Vehicle to rearrange \cs --- [\cs{} \& \si{} $\leftrightarrow$ \ci]
        \item Building block for surrounding Si host \& further SiC
@@ -1869,16 +1782,13 @@ $\Rightarrow$ Precipitation process involves {\color{blue}\cs}
        \item Low T: highly mobile {\color{red}\ci}
        \item High T: stable configurations of {\color{blue}\cs}
       \end{itemize}
-\end{itemize}
-\vspace{0.2cm}
-\centering
 \psframebox[linecolor=blue,linewidth=0.05cm]{
 \begin{minipage}{7cm}
 \centering
-Precipitation mechanism involving \cs\\
 High T $\leftrightarrow$ IBS conditions far from equilibrium\\
 \end{minipage}
 }
+\end{itemize}
 \end{minipage}
 \vspace{0.2cm}
 }}
@@ -1958,9 +1868,6 @@ High C \& low T implants
 % skip high c conc
 \fi
 
-% for preparation
-%\fi
-
 \begin{slide}
 
 \headphd
@@ -1983,7 +1890,7 @@ High C \& low T implants
          \item Identified \ci{} migration path
          \item EA drastically overestimates the diffusion barrier
         \end{itemize}
-   \item Combinations of defects
+   \item Combinations of defects (DFT)
          \begin{itemize}
           \item Agglomeration of point defects energetically favorable
           \item C$_{\text{sub}}$ favored conditions (conceivable in IBS)
@@ -2030,10 +1937,12 @@ High C \& low T implants
 
  Thanks to \ldots
 
+\begin{minipage}[t]{6cm}
  \underline{Augsburg}
  \begin{itemize}
   \item Prof. B. Stritzker
   \item Ralf Utermann
+  \item EP \RM{4}
  \end{itemize}
  
  \underline{Helsinki}
@@ -2052,17 +1961,30 @@ High C \& low T implants
   \item Prof. G. Schmidt
   \item Dr. E. Rauls
  \end{itemize}
+\end{minipage}
+\begin{minipage}[t]{6cm}
+\underline{Referees}
+ \begin{itemize}
+  \item PD V. Eyert
+  \item Prof. F. Haider
+ \end{itemize}
+\end{minipage}
 
-\vspace{ 0.2cm}
-
+\vspace{0.5cm}
 \begin{center}
 \framebox{
-\normalsize\bf Thank you for your attention!
+\Large\bf Thank you for your attention!
 }
 \end{center}
 
 \end{slide}
 
+
+
+
+
+
+
 \begin{slide}
 
 \headphd