X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Ftalks%2Fdefense.tex;h=c6cb981737d60be6dd44500d9fc438cc7cf10fef;hp=a8062e86cd38703c420e4980a4e21c592e9f22c8;hb=a08cd67251d6433ee23653e567601260436c923a;hpb=3f65cf44692d94497ff4a2ac366cb91b97ac3012

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index a8062e8..c6cb981 100644
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -142,23 +142,26 @@ E\\
 
  \vspace{16pt}
 
- {\LARGE\bf
-  Atomistic simulation study\\[0.2cm]
-  on silicon carbide precipitation\\[0.2cm]
-  in silicon
+ {\Large\bf
+  \hrule
+  \vspace{5pt}
+  Atomistic simulation study on silicon carbide\\[0.2cm]
+  precipitation in silicon\\
+  \vspace{10pt}
+  \hrule
  }
 
- \vspace{48pt}
+ \vspace{60pt}
 
  \textsc{Frank Zirkelbach}
 
- \vspace{48pt}
+ \vspace{60pt}
 
  Defense of doctor's thesis
 
  \vspace{08pt}
 
- Augsburg, 10. Jan. 2012
+ Augsburg, 10.01.2012
 
 \end{center}
 \end{slide}
@@ -166,6 +169,9 @@ E\\
 % no vertical centering
 \centerslidesfalse
 
+% skip for preparation
+\ifnum1=0
+
 % intro
 
 % motivation / properties / applications of silicon carbide
@@ -243,9 +249,11 @@ E\\
 \begin{slide}
 
  {\large\bf
-  Polytypes of SiC\\[0.4cm]
+  Polytypes of SiC\\[0.6cm]
  }
 
+\vspace{0.6cm}
+
 \includegraphics[width=3.8cm]{cubic_hex.eps}\\
 \begin{minipage}{1.9cm}
 {\tiny cubic (twist)}
@@ -288,6 +296,8 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 
 \end{slide}
 
+\fi
+
 % fabrication
 
 \begin{slide}
@@ -321,13 +331,15 @@ SiC thin films by MBE \& CVD
 \begin{picture}(0,0)(-310,-20)
   \includegraphics[width=2.0cm]{cree.eps}
 \end{picture}
+{\color{red}\scriptsize Mismatch in thermal expansion coeefficient
+                        and lattice paramater}
 
 \vspace{-0.2cm}
 
-Alternative approach:
+{\bf Alternative approach}\\
 Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 
-\vspace{0.2cm}
+\vspace{0.1cm}
 
 \scriptsize
 
@@ -350,36 +362,13 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 \end{minipage}
 }
 \begin{minipage}{5.5cm}
- \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm]
- \begin{center}
- {\tiny
-  XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
- }
- \end{center}
-\end{minipage}
-
-\end{slide}
-
-% contents
-
-\begin{slide}
-
-\headphd
-{\large\bf
- Outline
+\begin{center}
+{\small
+No surface bending effects\\
+$\Rightarrow$ Synthesis of large area SiC films possible
 }
-
- \begin{itemize}
-  \item Supposed precipitation mechanism of SiC in Si
-  \item Utilized simulation techniques
-        \begin{itemize}
-         \item Molecular dynamics (MD) simulations
-         \item Density functional theory (DFT) calculations
-        \end{itemize}
-  \item C and Si self-interstitial point defects in silicon
-  \item Silicon carbide precipitation simulations
-  \item Summary / Conclusion / Outlook
- \end{itemize}
+\end{center}
+\end{minipage}
 
 \end{slide}
 
@@ -387,7 +376,7 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 
 \headphd
 {\large\bf
- Formation of epitaxial single crystalline 3C-SiC
+ IBS of epitaxial single crystalline 3C-SiC
 }
 
 \footnotesize
@@ -410,8 +399,13 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 \end{itemize}
 \end{center}
 
-\begin{minipage}{7cm}
-\includegraphics[width=7cm]{ibs_3c-sic.eps}
+\begin{minipage}{6.9cm}
+\includegraphics[width=7cm]{ibs_3c-sic.eps}\\[-0.4cm]
+\begin{center}
+{\tiny
+ XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
+}
+\end{center}
 \end{minipage}
 \begin{minipage}{5cm}
 \begin{pspicture}(0,0)(0,0)
@@ -435,8 +429,8 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
  \end{itemize}
 \end{minipage}
 }}
-\rput(-6.8,5.4){\pnode{h0}}
-\rput(-3.0,5.4){\pnode{h1}}
+\rput(-6.8,5.5){\pnode{h0}}
+\rput(-3.0,5.5){\pnode{h1}}
 \ncline[linecolor=blue]{-}{h0}{h1}
 \ncline[linecolor=blue]{->}{h1}{box}
 \end{pspicture}
@@ -444,6 +438,33 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 
 \end{slide}
 
+\end{document}
+% temp
+\ifnum1=0
+
+% contents
+
+\begin{slide}
+
+\headphd
+{\large\bf
+ Outline
+}
+
+ \begin{itemize}
+  \item Supposed precipitation mechanism of SiC in Si
+  \item Utilized simulation techniques
+        \begin{itemize}
+         \item Molecular dynamics (MD) simulations
+         \item Density functional theory (DFT) calculations
+        \end{itemize}
+  \item C and Si self-interstitial point defects in silicon
+  \item Silicon carbide precipitation simulations
+  \item Summary / Conclusion
+ \end{itemize}
+
+\end{slide}
+
 \begin{slide}
 
 \headphd
@@ -2277,3 +2298,4 @@ Investigation of structure \& structural evolution \ldots
 
 \end{document}
 
+\fi