X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Ftalks%2Fdefense.tex;h=e0f334deb00ebf20bef389b22e56734e3739ebb6;hp=d41cff2b11d5c561eaf5aafe5503718fd8931aac;hb=bb741b8e0c861ccd0f8751734fa967691665de9a;hpb=17d5c879c418790a154098e51c524eca183c4d98

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index d41cff2..e0f334d 100644
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -966,7 +966,7 @@ $E_{\text{f}}=5.18\text{ eV}$\\
 
 \scriptsize
 
-\vspace{0.2cm}
+\vspace{0.3cm}
 
 \begin{minipage}{6.8cm}
 \framebox{\hkl[0 0 -1] $\rightarrow$ \hkl[0 0 1]}\\
@@ -985,14 +985,14 @@ $\rightarrow$
 \begin{minipage}{2.0cm}
 \includegraphics[width=2.0cm]{c_pd_vasp/100_next_2333.eps}
 \end{minipage}\\[0.1cm]
-Spin polarization\\
-$\Rightarrow$ BC configuration constitutes local minimum\\
+Symmetry:\\
+$\Rightarrow$ Sufficient to consider \hkl[00-1] to BC transition\\
 $\Rightarrow$ Migration barrier to reach BC | $\Delta E=\unit[1.2]{eV}$
 \end{minipage}
 \begin{minipage}{5.4cm}
 \includegraphics[width=6.0cm]{im_00-1_nosym_sp_fullct_thesis_vasp_s.ps}
 %\end{minipage}\\[0.2cm]
-\end{minipage}\\[0.3cm]
+\end{minipage}\\[0.4cm]
 %\hrule
 %
 \begin{minipage}{6.8cm}
@@ -1083,7 +1083,7 @@ Note: Change in orientation
 
 \headphd
 {\large\bf\boldmath
- Defect combinations
+ Defect combinations --- ab inito
 }
 
 \footnotesize
@@ -1708,8 +1708,7 @@ $\Rightarrow$ Phase transition consists of {\color{red}\underline{many}}
 
 {\bf Limitations related to the short range potential}\\[0.2cm]
 Cut-off function limits interaction to next neighbours\\
-$\Rightarrow$ Overestimated unphysical high forces of next neighbours
-              (factor: 2.4--3.4)
+$\Rightarrow$ Overestimated diffusion barrier (factor: 2.4--3.4)
 
 \vspace{1.4cm}
 
@@ -2013,7 +2012,7 @@ High C \& low T implants
   \item Low T $\rightarrow$ C-Si \hkl<1 0 0> dumbbell dominated structure
   \item High T $\rightarrow$ C$_{\text{sub}}$ dominated structure
   \item High T necessary to simulate IBS conditions (far from equilibrium)
-  \item Increased participation of \cs{} in the precipitation process
+  \item \cs{} involved in the precipitation process at elevated temperatures
   \item \si{}: vehicle to form \cs{} \& supply of Si \& stress compensation
         (stretched SiC, interface)
  \end{itemize}
@@ -2022,7 +2021,7 @@ High C \& low T implants
 
 \begin{center}
 {\color{blue}\bf
-\framebox{Precipitation by successive agglomeration of \cs{}}
+\framebox{IBS: 3C-SiC precipitation occurs by successive agglomeration of \cs{}}
 }
 \end{center}