X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Ftalks%2Fdefense.tex;h=e1c938b85facf32da14401b1e18b7b98d7952070;hp=00f1c5a20929fd5a4c661453e1a19268526e1b70;hb=f48ab8ab048458b22a9aecfe7b47c7f07bd5a019;hpb=348f10f39655e4efc37eb22f88ac02c75ec60c23 diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex index 00f1c5a..e1c938b 100644 --- a/posic/talks/defense.tex +++ b/posic/talks/defense.tex @@ -122,6 +122,7 @@ % layout check %\layout +\ifnum1=0 \begin{slide} \center {\Huge @@ -134,6 +135,7 @@ F\\ E\\ } \end{slide} +\fi % topic @@ -170,7 +172,7 @@ E\\ \centerslidesfalse % skip for preparation -\ifnum1=0 +%\ifnum1=0 % intro @@ -333,15 +335,15 @@ SiC thin films by MBE \& CVD \vspace{-0.5cm} -\begin{center} -\color{red} -\framebox{ -{\footnotesize\color{black} - Mismatch in \underline{thermal expansion coeefficient} - and \underline{lattice parameter} w.r.t. substrate -} -} -\end{center} +%\begin{center} +%\color{red} +%\framebox{ +%{\footnotesize\color{black} +% Mismatch in \underline{thermal expansion coeefficient} +% and \underline{lattice parameter} w.r.t. substrate +%} +%} +%\end{center} \vspace{0.1cm} @@ -371,16 +373,25 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0) \end{minipage} } \begin{minipage}{5.5cm} -\begin{center} -{\footnotesize -No surface bending effects\\ -High areal homogenity\\[0.1cm] -$\Downarrow$\\[0.1cm] -Synthesis of large area SiC films possible -} -\end{center} + \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm] + \begin{center} + {\tiny + XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0) + } + \end{center} \end{minipage} +%\begin{minipage}{5.5cm} +%\begin{center} +%{\footnotesize +%No surface bending effects\\ +%High areal homogenity\\[0.1cm] +%$\Downarrow$\\[0.1cm] +%Synthesis of large area SiC films possible +%} +%\end{center} +%\end{minipage} + \end{slide} \begin{slide} @@ -449,12 +460,6 @@ Synthesis of large area SiC films possible \end{slide} -%\end{document} -% temp -%\ifnum1=0 - -% contents - \begin{slide} \headphd @@ -714,10 +719,10 @@ r = \unit[2--4]{nm} \end{slide} -\fi - \begin{slide} +% contents + \headphd {\large\bf Outline @@ -1074,9 +1079,6 @@ $E_{\text{f}}=5.18\text{ eV}$\\ \end{slide} -\end{document} -\ifnum1=0 - \begin{slide} \headphd @@ -2122,11 +2124,6 @@ equilibrium properties \begin{itemize} \item Stretched coherent SiC structures\\ $\Rightarrow$ Precipitation process involves {\color{blue}\cs} -\item Explains annealing behavior of high/low T C implantations - \begin{itemize} - \item Low T: highly mobile {\color{red}\ci} - \item High T: stable configurations of {\color{blue}\cs} - \end{itemize} \item Role of \si{} \begin{itemize} \item Vehicle to rearrange \cs --- [\cs{} \& \si{} $\leftrightarrow$ \ci] @@ -2135,6 +2132,11 @@ $\Rightarrow$ Precipitation process involves {\color{blue}\cs} \ldots Si/SiC interface\\ \ldots within stretched coherent SiC structure \end{itemize} +\item Explains annealing behavior of high/low T C implantations + \begin{itemize} + \item Low T: highly mobile {\color{red}\ci} + \item High T: stable configurations of {\color{blue}\cs} + \end{itemize} \end{itemize} \vspace{0.2cm} \centering @@ -2152,7 +2154,7 @@ High T $\leftrightarrow$ IBS conditions far from equilibrium\\ \end{slide} -% skip high T / C conc ... only here! +% skip high c conc results \ifnum1=0 \begin{slide} @@ -2163,10 +2165,10 @@ High T $\leftrightarrow$ IBS conditions far from equilibrium\\ \footnotesize -\begin{minipage}{6.5cm} +\begin{minipage}{6.0cm} \includegraphics[width=6.4cm]{12_pc_thesis.ps} \end{minipage} -\begin{minipage}{6.5cm} +\begin{minipage}{6.0cm} \includegraphics[width=6.4cm]{12_pc_c_thesis.ps} \end{minipage} @@ -2221,64 +2223,74 @@ High C \& low T implants \end{slide} -% skipped high T / C conc +% skip high c conc \fi +% for preparation +%\fi + \begin{slide} +\headphd {\large\bf - Summary / Outlook + Summary and Conclusions } -\small +\footnotesize -\begin{pspicture}(0,0)(12,1.0) -\psframebox[fillstyle=gradient,gradbegin=hred,gradend=white,gradlines=1000,gradmidpoint=1.0,linestyle=none]{ -\begin{minipage}{11cm} -{\color{black}Diploma thesis}\\ - \underline{Monte Carlo} simulation modeling the selforganization process\\ - leading to periodic arrays of nanometric amorphous SiC precipitates +\vspace{0.1cm} + +\framebox{ +\begin{minipage}{12.3cm} + \underline{Defects} + \begin{itemize} + \item DFT / EA + \begin{itemize} + \item Point defects excellently / fairly well described + by DFT / EA + \item Identified \ci{} migration path + \item EA drastically overestimates the diffusion barrier + \end{itemize} + \item Combinations of defects + \begin{itemize} + \item Agglomeration of point defects energetically favorable + \item C$_{\text{sub}}$ favored conditions (conceivable in IBS) + \item \ci{} \hkl<1 0 0> $\leftrightarrow$ \cs{} \& \si{} \hkl<1 1 0>\\ + Low barrier (\unit[0.77]{eV}) \& low capture radius + \end{itemize} + \end{itemize} \end{minipage} } -\end{pspicture}\\[0.4cm] -\begin{pspicture}(0,0)(12,2) -\psframebox[fillstyle=gradient,gradbegin=hblue,gradend=white,gradmidpoint=1.0,gradlines=1000,linestyle=none]{ -\begin{minipage}{11cm} -{\color{black}Doctoral studies}\\ - Classical potential \underline{molecular dynamics} simulations \ldots\\ - \underline{Density functional theory} calculations \ldots\\[0.2cm] - \ldots on defect formation and SiC precipitation in Si + +\framebox{ +\begin{minipage}[t]{12.3cm} + \underline{Pecipitation simulations} + \begin{itemize} + \item Problem of potential enhanced slow phase space propagation + \item Low T $\rightarrow$ C-Si \hkl<1 0 0> dumbbell dominated structure + \item High T $\rightarrow$ C$_{\text{sub}}$ dominated structure + \item High T necessary to simulate IBS conditions (far from equilibrium) + \item Increased participation of \cs{} in the precipitation process + \item \si{}: vehicle to form \cs{} \& supply of Si \& stress compensation + (stretched SiC, interface) + \end{itemize} \end{minipage} } -\end{pspicture}\\[0.5cm] -\begin{pspicture}(0,0)(12,3) -\psframebox[fillstyle=solid,fillcolor=white,linestyle=solid]{ -\begin{minipage}{11cm} -\vspace{0.2cm} -{\color{black}\bf How to proceed \ldots}\\[0.1cm] -MC $\rightarrow$ empirical potential MD $\rightarrow$ Ground-state DFT \ldots -\begin{itemize} - \renewcommand\labelitemi{$\ldots$} - \item beyond LDA/GGA methods \& ground-state DFT -\end{itemize} -Investigation of structure \& structural evolution \ldots -\begin{itemize} - \renewcommand\labelitemi{$\ldots$} - \item electronic/optical properties - \item electronic correlations - \item non-equilibrium systems -\end{itemize} -\end{minipage} + +\begin{center} +{\color{blue}\bf +\framebox{Precipitation by successive agglomeration of \cs{}} } -\end{pspicture}\\[0.5cm] +\end{center} \end{slide} \begin{slide} - {\large\bf - Acknowledgements - } +\headphd +{\large\bf + Acknowledgements +} \vspace{0.1cm} @@ -2288,31 +2300,38 @@ Investigation of structure \& structural evolution \ldots \underline{Augsburg} \begin{itemize} - \item Prof. B. Stritzker (accomodation at EP \RM{4}) - \item Ralf Utermann (EDV) + \item Prof. B. Stritzker + \item Prof. F. Haider + \item Ralf Utermann + \end{itemize} + + \underline{Berlin/Brandenburg} + \begin{itemize} + \item PD V. Eyert \end{itemize} \underline{Helsinki} \begin{itemize} - \item Prof. K. Nordlund (MD) + \item Prof. K. Nordlund \end{itemize} \underline{Munich} \begin{itemize} - \item Bayerische Forschungsstiftung (financial support) + \item Bayerische Forschungsstiftung \end{itemize} \underline{Paderborn} \begin{itemize} - \item Prof. J. Lindner (SiC) - \item Prof. G. Schmidt (DFT + financial support) - \item Dr. E. Rauls (DFT + SiC) + \item Prof. J. Lindner + \item Prof. G. Schmidt + \item Dr. E. Rauls \end{itemize} - \underline{Stuttgart} +\vspace{0.1cm} + \begin{center} \framebox{ -\bf Thank you for your attention / invitation! +\bf Thank you for your attention! } \end{center} @@ -2320,5 +2339,3 @@ Investigation of structure \& structural evolution \ldots \end{document} -\fi -