X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Ftalks%2Fdpg_2008.tex;h=483f760d62bb05491b787a15b3cff0c3e487fc77;hp=fd70c5eded3b9533fb73d0e3266065c6040e1d53;hb=e08a97849ebaf34c088eef126bf83fa8a4267119;hpb=227b7567efc97a86ace039696f547d68e809e86d

diff --git a/posic/talks/dpg_2008.tex b/posic/talks/dpg_2008.tex
index fd70c5e..483f760 100644
--- a/posic/talks/dpg_2008.tex
+++ b/posic/talks/dpg_2008.tex
@@ -20,8 +20,8 @@
 \usepackage{pstricks}
 \usepackage{pst-node}
 
-\usepackage{epic}
-\usepackage{eepic}
+%\usepackage{epic}
+%\usepackage{eepic}
 
 \usepackage{graphicx}
 \graphicspath{{../img/}}
@@ -152,13 +152,14 @@
          \item {\color{orange}fcc} $+$
          \item {\color{gray}fcc shifted $1/4$ of volume diagonal}
 	\end{itemize}
-  \item Lattice constants: $4a_{Si}\approx5a_{SiC}$
+  \item Lattice constants:
+        \[
+	4a_{Si}\approx5a_{SiC}
+	\]
   \item Silicon density: 
         \[
-        \frac{n_{SiC}}{n_{Si}}=
-	\frac{4/a_{SiC}^3}{8/a_{Si}^3}=
-        \frac{5^3}{2\cdot4^3}={\color{cyan}97,66}\,\%
-        \]
+        \frac{n_{SiC}}{n_{Si}}=97,66\,\%
+	\]
  \end{itemize}
  \end{minipage}
  \hspace{8pt}
@@ -213,7 +214,7 @@
  Experimentally observed:
  \begin{itemize}
   \item Minimal diameter of precipitation: 4 - 5 nm
-  \item (hkl)-planes identical for Si and SiC
+  \item Equal orientation of Si and SiC (hkl)-planes
  \end{itemize}
 
 \end{slide}
@@ -265,7 +266,7 @@
 
  \vspace{8pt}
 
- Interstitial experiments:
+ Interstitial simulations:
 
  \vspace{8pt}
 
@@ -307,7 +308,7 @@
 
  {\large\bf
   Results
- } - Si self-interstitial experiments
+ } - Si self-interstitial runs
 
  \small
 
@@ -349,7 +350,7 @@
 
  {\large\bf
   Results
- } - Carbon interstitial experiments
+ } - Carbon interstitial runs
 
  \small
 
@@ -386,13 +387,11 @@
    \includegraphics[width=3.2cm]{c_in_si_int_rand_162_0.eps}
 \end{minipage}
 \begin{minipage}[t]{3.3cm}
-   $E_f=2.39\, eV$ \hspace{2pt}
-   \href{../video/c_in_si_int_rand_239.avi}{$\rhd$}\\
+   $E_f=2.39\, eV$\\
    \includegraphics[width=3.1cm]{c_in_si_int_rand_239_0.eps}
 \end{minipage}
 \begin{minipage}[t]{3.0cm}
-   $E_f=3.41\, eV$ \hspace{2pt}
-   \href{../video/c_in_si_int_rand_341.avi}{$\rhd$}\\
+   $E_f=3.41\, eV$\\
    \includegraphics[width=3.3cm]{c_in_si_int_rand_341_0.eps}
 \end{minipage}
 
@@ -408,7 +407,7 @@
 
  \vspace{8pt}
 
- SiC precipitation experiments:
+ SiC precipitation simulations:
 
  \vspace{8pt}
 
@@ -455,16 +454,40 @@
 \begin{slide}
 
  {\large\bf
-  Very first results of the SiC precipitation experiments
+  Very first results of the SiC precipitation runs
+ }
+
+ \footnotesize
+
+ \begin{minipage}[b]{6.9cm}
+  \includegraphics[width=6.3cm]{../plot/sic_prec_energy.ps}
+  \includegraphics[width=6.3cm]{../plot/sic_prec_temp.ps}
+ \end{minipage}
+ \begin{minipage}[b]{5.5cm}
+  \begin{itemize}
+   \item {\color{red} Total simulation volume}
+   \item {\color{green} Volume of minimal SiC precipitation}
+   \item {\color{blue} Volume of necessary amount of Si}
+  \end{itemize}
+  \vspace{40pt}
+  \includegraphics[width=6.3cm]{../plot/foo150.ps}
+ \end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+  Very first results of the SiC precipitation runs
  }
 
- \begin{minipage}[t]{6.3cm}
-  %\includegraphics[width=6.0cm]{../plot/sic_prec_energy.ps}
-  %\includegraphics[width=6.0cm]{../plot/sic_prec_temp.ps}
+ \begin{minipage}[t]{6.9cm}
+  \includegraphics[width=6.3cm]{../plot/sic_pc.ps}
+  \includegraphics[width=6.3cm]{../plot/foo_end.ps}
+  \hspace{12pt}
  \end{minipage}
- \begin{minipage}[c]{12.5cm}
-  \includegraphics[height=5.0cm]{../plot/sic_pc.ps}
-  \includegraphics[height=4.0cm]{sic_si-c-n.eps}
+ \begin{minipage}[c]{5.5cm}
+  \includegraphics[width=6.0cm]{sic_si-c-n.eps}
  \end{minipage}
 
 \end{slide}
@@ -478,17 +501,16 @@
 \vspace{24pt}
 
 \begin{itemize}
- \item Importance of understanding C in Si
+ \item Importance of understanding the SiC precipitation mechanism
  \item Interstitial configurations in silicon using the Albe potential
  \item Indication of SiC precipitation
 \end{itemize}
 
-\vspace{16pt}
+\vspace{24pt}
 
 \begin{itemize}
  \item Displacement and stress calculations
- \item Diffusion dependence of temperature and carbon concentration
- \item Analyzing results of the precipitation simulation runs
+ \item Refinement of simulation sequence to create 3C-SiC
  \item Analyzing self-designed Si/SiC interface
 \end{itemize}