X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Ftalks%2Fmpi_app.tex;h=2c9d67f5198a6ab4bedef0e963d7091b665ffd09;hp=f3e3a124203cedbc824fc2a9b1cd370c9cc36d83;hb=b6c9035922c11a92c52e0b0752d44225457d9966;hpb=61442ed703dca521cdf1d4f89430d1f2cd136abe

diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex
index f3e3a12..2c9d67f 100644
--- a/posic/talks/mpi_app.tex
+++ b/posic/talks/mpi_app.tex
@@ -143,6 +143,9 @@ E\\
 \end{center}
 \end{slide}
 
+% no vertical centering
+\centerslidesfalse
+
 \ifnum1=0
 
 % intro
@@ -296,7 +299,6 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 
 \end{slide}
 
-\fi
 % fabrication
 
 \begin{slide}
@@ -309,13 +311,15 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
  
  \vspace{2pt}
 
+\begin{center}
  {\color{gray}
  \emph{Silicon carbide --- Born from the stars, perfected on earth.}
  }
+\end{center}
 
 \vspace{2pt}
 
-SiC thin film by MBE \& CVD
+SiC thin films by MBE \& CVD
 \begin{itemize}
  \item Much progress achieved in homo/heteroepitaxial SiC thin film growth
  \item \underline{Commercially available} semiconductor power devices based on
@@ -328,141 +332,126 @@ SiC thin film by MBE \& CVD
   \includegraphics[width=2.0cm]{cree.eps}
 \end{picture}
 
-Alternative method: Ion beam synthesis of SiC in Si
+\vspace{-0.2cm}
 
- \begin{itemize}
-  \item \underline{Sublimation growth using the modified Lely method}
-        \begin{itemize}
-         \item SiC single-crystalline seed at $T=1800 \, ^{\circ} \text{C}$
-         \item Surrounded by polycrystalline SiC in a graphite crucible\\
-               at $T=2100-2400 \, ^{\circ} \text{C}$
-         \item Deposition of supersaturated vapor on cooler seed crystal
-        \end{itemize}
-  \item \underline{Homoepitaxial growth using CVD}
-        \begin{itemize}
-         \item Step-controlled epitaxy on off-oriented 6H-SiC substrates
-         \item C$_3$H$_8$/SiH$_4$/H$_2$ at $1100-1500 \, ^{\circ} \text{C}$
-         \item Angle, temperature $\rightarrow$ 3C/6H/4H-SiC
-        \end{itemize}
-  \item \underline{Heteroepitaxial growth of 3C-SiC on Si using CVD/MBE}
-        \begin{itemize}
-         \item Two steps: carbonization and growth
-         \item $T=650-1050 \, ^{\circ} \text{C}$
-         \item SiC/Si lattice mismatch $\approx$ 20 \%
-         \item Quality and size not yet sufficient
-        \end{itemize}
- \end{itemize}
+Alternative approach:
+Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 
- \begin{picture}(0,0)(-280,-65)
-  \includegraphics[width=3.8cm]{6h-sic_3c-sic.eps}
- \end{picture}
- \begin{picture}(0,0)(-280,-55)
-  \begin{minipage}{5cm}
-  {\tiny
-   NASA: 6H-SiC and 3C-SiC LED\\[-7pt]
-   on 6H-SiC substrate
-  }
-  \end{minipage}
- \end{picture}
- \begin{picture}(0,0)(-265,-150)
-  \includegraphics[width=2.4cm]{m_lely.eps}
- \end{picture}
- \begin{picture}(0,0)(-333,-175)
-  \begin{minipage}{5cm}
-  {\tiny
-   1. Lid\\[-7pt]
-   2. Heating\\[-7pt]
-   3. Source\\[-7pt]
-   4. Crucible\\[-7pt]
-   5. Insulation\\[-7pt]
-   6. Seed crystal
-  }
-  \end{minipage}
- \end{picture}
- \begin{picture}(0,0)(-230,-35)
- \framebox{
- {\footnotesize\color{blue}\bf Hex: micropipes along c-axis}
+\vspace{0.2cm}
+
+\scriptsize
+
+\framebox{
+\begin{minipage}{3.15cm}
+ \begin{center}
+\includegraphics[width=3cm]{imp.eps}\\
+ {\tiny
+  Carbon implantation
  }
- \end{picture}
- \begin{picture}(0,0)(-230,-10)
- \framebox{
- \begin{minipage}{3cm}
- {\footnotesize\color{blue}\bf 3C-SiC fabrication\\
-                               less advanced}
- \end{minipage}
+ \end{center}
+\end{minipage}
+\begin{minipage}{3.15cm}
+ \begin{center}
+\includegraphics[width=3cm]{annealing.eps}\\
+ {\tiny
+  \unit[12]{h} annealing at \degc{1200}
  }
- \end{picture}
+ \end{center}
+\end{minipage}
+}
+\begin{minipage}{5.5cm}
+ \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm]
+ \begin{center}
+ {\tiny
+  XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
+ }
+ \end{center}
+\end{minipage}
 
 \end{slide}
 
-\end{document}
-\ifnum1=0
-
 % contents
 
 \begin{slide}
 
 {\large\bf
- Outline
+ Systematic investigation of C implantations into Si
 }
 
- \begin{itemize}
-  \item Implantation of C in Si --- Overview of experimental observations
-  \item Utilized simulation techniques and modeled problems
-        \begin{itemize}
-         \item {\color{blue}Diploma thesis}\\
-               \underline{Monte Carlo} simulations
-               modeling the selforganization process
-               leading to periodic arrays of nanometric amorphous SiC
-               precipitates
-         \item {\color{blue}Doctoral studies}\\
-               Classical potential \underline{molecular dynamics} simulations
-               \ldots\\
-               \underline{Density functional theory} calculations
-               \ldots\\[0.2cm]
-               \ldots on defects and SiC precipitation in Si
-        \end{itemize}
-  \item Summary / Conclusion / Outlook
- \end{itemize}
+\vspace{1.7cm}
+\begin{center}
+\hspace{-1.0cm}
+\includegraphics[width=0.75\textwidth]{imp_inv.eps}
+\end{center}
 
 \end{slide}
 
+% outline
 
+\begin{slide}
 
-\end{document}
+{\large\bf
+ Outline
+}
 
+\vspace{1.7cm}
+\begin{center}
+\hspace{-1.0cm}
+\includegraphics[width=0.75\textwidth]{imp_inv.eps}
+\end{center}
+
+\begin{pspicture}(0,0)(0,0)
+\rput(6.0,7.0){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{
+\begin{minipage}{11cm}
+{\color{red}Diploma thesis}\\
+ \underline{Monte Carlo} simulation modeling the selforganization process\\
+ leading to periodic arrays of nanometric amorphous SiC precipitates
+\end{minipage}
+}}}
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\rput(6.0,-0.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{
+\begin{minipage}{11cm}
+{\color{blue}Doctoral studies}\\
+ Classical potential \underline{molecular dynamics} simulations \ldots\\
+ \underline{Density functional theory} calculations \ldots\\[0.2cm]
+ \ldots on defect formation and SiC precipitation in Si
+\end{minipage}
+}}}
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=red,linewidth=0.05cm](5,3.0)(0.8,1.0)
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=blue,linewidth=0.05cm](8.2,3.2)(1.5,1.6)
+\end{pspicture}
+
+\end{slide}
+
+% continue here
+\fi
 \begin{slide}
 
- {\large\bf
-  Fabrication of silicon carbide
- }
+{\large\bf
+ Selforganization of nanometric amorphous SiC lamellae
+}
 
- \small
+\begin{minipage}{6cm}
+\includegraphics[width=6cm]{}
+\end{minipage}
 
- Alternative approach:
- Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
- \begin{itemize}
-  \item \underline{Implantation step 1}\\
-        180 keV C$^+$, $D=7.9\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=500\,^{\circ}\mathrm{C}$\\
-        $\Rightarrow$ box-like distribution of equally sized
-                       and epitactically oriented SiC precipitates
-                       
-  \item \underline{Implantation step 2}\\
-        180 keV C$^+$, $D=0.6\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=250\,^{\circ}\mathrm{C}$\\
-        $\Rightarrow$ destruction of SiC nanocrystals
-                      in growing amorphous interface layers
-  \item \underline{Annealing}\\
-        $T=1250\,^{\circ}\mathrm{C}$, $t=10\,\text{h}$\\
-        $\Rightarrow$ homogeneous, stoichiometric SiC layer
-                      with sharp interfaces
- \end{itemize}
+\end{slide}
+
+
+\end{document}
+\ifnum1=0
+
+\begin{slide}
+
+{\large\bf
+ Selforganization of nanometric amorphous SiC lamellae
+}
 
- \begin{minipage}{6.3cm}
- \includegraphics[width=6cm]{ibs_3c-sic.eps}\\[-0.2cm]
- {\tiny
-  XTEM micrograph of single crystalline 3C-SiC in Si\hkl(1 0 0)
- }
- \end{minipage}
 \framebox{
  \begin{minipage}{6.3cm}
  \begin{center}
@@ -479,9 +468,8 @@ Alternative method: Ion beam synthesis of SiC in Si
  \end{center}
  \end{minipage}
 }
- 
-\end{slide}
 
+\end{slide}
 
 \begin{slide}