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diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 4bb2677..92d0848 100644
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -479,7 +479,7 @@ This is in agreement with results of the EA potential simulations, which reveal
 However, this fact could not be reproduced by spin polarized \textsc{vasp} calculations performed in this work.
 Present results suggest this configuration to correspond to a real local minimum.
 In fact, an additional barrier has to be passed to reach this configuration starting from the \ci{} \hkl<1 0 0> interstitial configuration, which is investigated in section~\ref{subsection:100mig}.
-After slightly displacing the C atom along the \hkl[1 0 0] (equivalent to a displacement along \hkl[0 1 0]), \hkl[0 0 1], \hkl[0 0 -1] and \hkl[1 -1 0] direction the distorted structures relax back into the BC configuration.
+After slightly displacing the C atom along the \hkl[1 0 0] (equivalent to a displacement along \hkl[0 1 0]), \hkl[0 0 1], \hkl[0 0 -1] and \hkl[1 -1 0] direction, the distorted structures relax back into the BC configuration.
 As will be shown in subsequent migration simulations, the same would happen to structures where the C atom is displaced along the migration direction, which approximately is the \hkl[1 1 0] direction.
 These relaxations indicate that the BC configuration is a real local minimum instead of an assumed saddle point configuration.
 Fig.~\ref{img:defects:bc_conf} shows the structure, charge density isosurface and Kohn-Sham levels of the BC configuration.
@@ -1317,7 +1317,7 @@ The migration pathways of configuration~\ref{fig:defects:314} and~\ref{fig:defec
 \label{fig:059-539}
 \end{figure}
 Activation energies as low as \unit[0.1]{eV} and \unit[0.6]{eV} are observed.
-In the first case the Si and C atom of the DB move towards the vacant and initial DB lattice site respectively.
+In the first case, the Si and C atom of the DB move towards the vacant and initial DB lattice site respectively.
 In total three Si-Si and one more Si-C bond is formed during transition.
 The activation energy of \unit[0.1]{eV} is needed to tilt the DB structure.
 Once this barrier is overcome, the C atom forms a bond to the top left Si atom and the \si{} atom capturing the vacant site is forming new tetrahedral bonds to its neighbored Si atoms.