X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fdefects.tex;h=5465ef8fc6abc2ffe4829c8ee79df2a6abcde47c;hp=e0ddc83c38fd30331479188038c23b44ca8fb7ad;hb=8b24d2f201fb3295f5a9b19c675271b8801f27d4;hpb=09347b148b76fbff4561678e8a5479b1825a7e43

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index e0ddc83..5465ef8 100644
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1133,3 +1133,16 @@ Low migration barriers are necessary to obtain this configuration and in contras
 Thus, carbon interstitials and vacancies located close together are assumed to end up in such a configuration in which the carbon atom is tetrahedrally coordinated and bound to four silicon atoms as expected in silicon carbide.
 In contrast to the above, this would suggest a silicon carbide precipitation by succesive creation of substitutional carbon instead of the agglomeration of C-Si dumbbell interstitials followed by an abrupt precipitation.
 
+{\color{red}Todo:
+C atoms in 100 DB tightend in 110 direction, which is important for stress compensation in some combined constellations.
+}
+{\color{red}Todo:
+Most of the combinations should only be thought of intermediate configurations, which need to be transformed in the later SiC precipitation process.
+}
+{\color{red}Todo:
+Better structure, better language, better methodology!
+}
+{\color{red}Todo:
+Fit of lennard-jones an other rep + attr potentials in 110 interaction data!
+}
+