X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fdefects.tex;h=cdc95a81bc6d069de34e3fb039cfd56f993a4ff6;hp=381dab5ddd622b694ebe78bedcc1a35f53b1234c;hb=06b5a10c4be0574aa9b45f7068ac8157dcb1815c;hpb=80e31ff7bd5a85d056283bc94f433c822c53fd34

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 381dab5..cdc95a8 100644
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1659,7 +1659,7 @@ Thus, elevated temperatures might lead to thermodynamically unstable configurati
 
 % todo - sync with conclusion chapter
 
-These findings allow to draw conclusions on the mechanisms involved in the process of SiC conversion in Si.
+These findings allow to draw conclusions on the mechanisms involved in the process of SiC conversion in Si, which is elaborated in more detail within the comprehensive description in chapter~\ref{chapter:summary}.
 Agglomeration of C$_{\text{i}}$ is energetically favored and enabled by a low activation energy for migration.
 Although ion implantation is a process far from thermodynamic equilibrium, which might result in phases not described by the Si/C phase diagram, i.e. a C phase in Si, high activation energies are believed to be responsible for a low probability of the formation of C-C clusters.
 
@@ -1671,7 +1671,7 @@ The rearrangement is crucial to end up in a configuration of C atoms only occupy
 On the other hand, the conversion of some region of Si into SiC by \cs{} is accompanied by a reduction of the volume since SiC exhibits a \unit[20]{\%} smaller lattice constant than Si.
 The reduction in volume is compensated by excess Si$_{\text{i}}$ serving as building blocks for the surrounding Si host or a further formation of SiC.
 
-To conclude, precipitation occurs by successive agglomeration of C$_{\text{s}}$.
+To conclude, the available results suggest precipitation by successive agglomeration of C$_{\text{s}}$.
 However, the agglomeration and rearrangement of C$_{\text{s}}$ is only possible by mobile C$_{\text{i}}$, which has to be present at the same time.
 Accordingly, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.
 It is worth to mention that there is no contradiction to results of the HREM studies \cite{werner96,werner97,eichhorn99,lindner99_2,koegler03}.