X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fdefects.tex;h=d6e52f15d643308dfc2fe98101bbf1e59686d698;hp=522470d7339b2bc431e652b11cd0def5a3e6bdb5;hb=2c91598c223e213c62f9a4356f8db5ed460d8a40;hpb=d5b0e9ca41375ef9492fdb0c79d4b7d19fe818e3

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 522470d..d6e52f1 100644
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1,4 +1,5 @@
 \chapter{Point defects in silicon}
+\label{chapter:defects}
 
 Given the conversion mechnism of SiC in crystalline silicon introduced in section \ref{section:assumed_prec} the understanding of carbon and silicon interstitial point defects in c-Si is of great interest.
 Both types of defects are examined in the following both by classical potential as well as density functional theory calculations.
@@ -840,7 +841,7 @@ The \hkl<1 1 0> configuration seems to play a decisive role in all migration pat
 In the first migration path it is the configuration resulting from further relaxation of the rather unstable bond-centered configuration, which is fixed to be a transition point in the migration calculations.
 The last two  pathways show configurations almost identical to the \hkl<1 1 0> configuration, which constitute a local minimum within the pathway.
 Thus, migration pathways with the \hkl<1 1 0> C-Si dumbbell interstitial configuration as a starting or final configuration are further investigated.
-\begin{figure}[ht!]
+\begin{figure}[!ht]
 \begin{center}
 \includegraphics[width=13cm]{110_mig.ps}
 \end{center}
@@ -1251,7 +1252,7 @@ Thus, combinations of substitutional C and an additional Si self-interstitial ar
 The ground state of a single Si self-interstitial was found to be the Si \hkl<1 1 0> self-interstitial configuration.
 For the follwoing study the same type of self-interstitial is assumed to provide the energetically most favorable configuration in combination with substitutional C.
 
-\begin{table}[ht!]
+\begin{table}[!ht]
 \begin{center}
 \begin{tabular}{l c c c c c c}
 \hline
@@ -1271,7 +1272,7 @@ C$_{\text{sub}}$ & \hkl<1 1 0> & \hkl<-1 1 0> & \hkl<0 1 1> & \hkl<0 -1 1> &
 \caption{Equivalent configurations of \hkl<1 1 0>-type Si self-interstitials created at position I of figure \ref{fig:defects:pos_of_comb} and substitutional C created at positions 1 to 5.}
 \label{tab:defects:comb_csub_si110}
 \end{table}
-\begin{table}[ht!]
+\begin{table}[!ht]
 \begin{center}
 \begin{tabular}{l c c c c c c c c c c}
 \hline