X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fmd.tex;h=71123ead3197f4eb80572a0638f959a505caa40f;hp=d89f30627c2d2c604677d3697841c32b67315d3c;hb=24257ebecb14052aafb291ccc70b5a7e2bf58228;hpb=0e66d3c664ff4a68a8000bd4ee9ae9350fbe69ed

diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex
index d89f306..71123ea 100644
--- a/posic/thesis/md.tex
+++ b/posic/thesis/md.tex
@@ -207,7 +207,7 @@ For high C concentrations, i.e.\ the $V_2$ and $V_3$ simulation corresponding to
 The consequential superposition of these defects and the high amounts of damage generate new displacement arrangements for the C-C as well as for the Si-C pair distances, which become hard to categorize and trace and obviously lead to a broader distribution.
 Short range order indeed is observed, i.e.\ the large amount of strong neighbored C-C bonds at \unit[0.15]{nm} as expected in graphite or diamond and Si-C bonds at \unit[0.19]{nm} as expected in SiC, but only hardly visible is the long range order.
 This indicates the formation of an amorphous SiC-like phase.
-In fact the resulting Si-C and C-C radial distribution functions compare quite well with these obtained by cascade amorphized and melt-quenched amorphous SiC using a modified Tersoff potential~\cite{gao02}.
+In fact, the resulting Si-C and C-C radial distribution functions compare quite well with these obtained by cascade amorphized and melt-quenched amorphous SiC using a modified Tersoff potential~\cite{gao02}.
 
 In both cases, i.e.\ low and high C concentrations, the formation of 3C-SiC fails to appear.
 With respect to the precipitation model, the formation of C$_{\text{i}}$ \hkl<1 0 0> DBs indeed occurs for low C concentrations.