X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fmd.tex;h=acb6d2adad9eb807d4115bdd75d0b51b1bf7357e;hp=f2f8eab2a5d136c8b47c3d4cab3c7cd586b74f3a;hb=0034511d32ceadc7572f9d277fdd690f64c5c507;hpb=a7b3adec0ef2a758c4cd6e2ad4e420c3b921235a

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 \chapter{Silicon carbide precipitation simulations}
+\label{chapter:md}
 
 The molecular dynamics (MD) technique is used to gain insight into the behavior of carbon existing in different concentrations in crystalline silicon on the microscopic level at finite temperatures.
 Both, quantum-mechanical and classical potential molecular dynamics simulations are performed.